CdGeAs2晶体的热膨胀行为研究

采用WinTA 100热膨胀仪研究了四方黄铜矿CdGeAs₂晶体在320~620 K温度范围内的热膨胀行为, 探索了CdGeAs₂晶体热膨胀各向异性的物理机制。测定晶体a轴和c轴方向的热膨胀系数α_a和α_c发现, α_a>>α_c>0, 表现出强烈的各向异性热膨胀特性。利用最小二乘法, 拟合出CdGeAs₂晶体的晶格常数(a, c)与温度(T)的函数关系式, 与文献报道值吻合。分别计算出不同温度下的四方畸变因子δ=2-c/a, Cd-As 键长(l_Cd-As)和 Ge-As 键长(l_Ge-As)以及相应的热膨胀系数α_Cd-As和α_Ge-As。结果表明, a、c、δ、l_Cd-As、l_Ge-As和α_Cd-As均随着温度的升高而增大, c/a和α_Ge-As则随着温度的升高而减小。当T=360 K时,α_Cd-As是α_Ge-As的6.36倍, 是造成CdGeAs₂晶体强烈热膨胀各向异性的主要原因。     

Mg-Al水滑石的改性机理和吸附性能

用硫酸铵对镁铝水滑石进行改性,研究了镁铝水滑石的溶解性及硫酸铵的改性机理。结果表明,镁铝水滑石在pH 1.0-11.0范围内呈现出完全溶解、部分溶解和基本不溶三种溶解特性。硫酸铵的改性即为镁铝水滑石的部分溶解过程,层板中镁以Mg²⁺形态进入溶液,导致羟基铝(Al（OH）₆^3-)进入溶液形成Keggin结构(Al₁₃聚集体),Al₁₃聚集体附着在镁铝水滑石层板表面形成无定形Al（OH）₃,从而阻止镁离子进一步溶出。改性镁铝水滑石对Pb²⁺的吸附率提高了18.3%,是比表面积的增加、化学键合及静电吸附能力的提升所致。     

ZBAS对BaAl2Si2O8结构与微波介电性能的影响

采用固相反应工艺, 按化学计量百分比BaAl₂Si₂O₈-x(ZnO-Al₂O₃-SiO₂-B₂O₃)(x=0, 1%, 2%, 3%, 4%)制备样品, 研究了不同含量ZnO-Al₂O₃-SiO₂-B₂O₃(ZBAS)玻璃相对BaO-Al₂O₃-SiO₂系介电材料显微结构及微波介电性能的影响。结果表明: 添加ZBAS玻璃相可以适当降低烧结温度, 促进六方钡长石转变为单斜钡长石。当x≥3%时, 六方钡长石可以完全转变为单斜钡长石。随着ZBAS玻璃相含量的增多, 样品的密度、介电常数(ε_r)、品质因数(Q×f)和谐振频率温度系数(τ_f )增大。在x=3%, 烧结温度为1360℃时, 可以获得综合性能相对较好的单斜钡长石, 其介电性能: ε_r=6.72, Q×f=28058 GHz, τ_f =-29.79×10^-6℃^-1。     

具有高度有序氧空位的α-Fe2O3纳米带的制备及光电催化水氧化性能研究

本研究针对α-Fe₂O₃中空穴迁移距离短(2~4 nm)和水氧化动力学缓慢的问题, 通过钯催化氧化法构筑了有序氧空位掺杂的一维α-Fe₂O₃纳米带(α-Fe₂O₃ NBs)阵列, 以提高光电催化分解水产氢性能。采用不同表征方法对光阳极进行形貌、结构分析。结果表明：一维α-Fe₂O₃ NBs表面形成了有序氧空位, 周期为1.48 nm, 对应于10倍的(11¯2)晶面间距。光电化学及产氢性能表明：α-Fe₂O₃ NBs起始电位为0.587 V (vs. RHE), 在1.6 V (vs. RHE)时光电流密度为3.3 mA·cm^-2, 产氢速率达29.46 μmol·cm^-2·h^-1。这归因于引入有序氧空位提高了载流子密度, 促进了空穴的分离传输, 并作为表面活性位点, 促使表面水氧化反应加速进行。     

MgO/SrO/La2O3多元添加对(Zr0.8Sn0.2)TiO4微波陶瓷结构性能影响

基于液相促进固相反应烧结机制, 设计MgO/SrO/La₂O₃多元复合添加(Zr_0.8Sn_0.2)TiO₄(ZST)体系, 探究复合添加剂对ZST陶瓷的物相组成、微观结构、烧结特性以及高频介电性能等参数的影响。实验结果表明: 陶瓷的主晶相均为ZST相; 适量添加MgO/SrO/La₂O₃可以有效地降低ZST陶瓷的烧结温度, 获得较优的微波介电性能; 但MgO添加量的增多对材料的综合性能有小幅度的影响; SrO的添加量过大会造成晶粒的不完全生长、瓷体不致密和气孔的增多, 从而导致材料的密度、介电常数和Q×f值的下降; 此外, 添加剂对陶瓷的频率温度系数(τ_f)影响不大。在复合添加0.2wt%MgO、0.6wt%SrO、1.0wt%La₂O₃时, 1300℃保温5 h的ZST陶瓷综合性能优异: ρ=5.14 g/cm³, ε_r=40.11, Q×f=51000 GHz (f=5.61 GHz), τ_f=-2.85×10^-6℃^-1。     

In:Ga2O3氧化物半导体晶体的生长与性能研究

β-Ga₂O₃晶体是一种新型宽禁带氧化物半导体材料, 本征导电性差。为了在调控导电性能的同时兼顾高的透过率和结晶性能, 离子掺杂是一种有效的途径。采用光学浮区法生长出ϕ8 mm×50 mm蓝色透明In:Ga₂O₃晶体, 晶体具有较高的结晶完整性。In³⁺离子掺杂后, β-Ga₂O₃晶体在红外波段出现明显的自由载流子吸收, 热导率稍有减小。室温下, In:Ga₂O₃晶体的电导率和载流子浓度分别为4.94×10^-4 S/cm和1.005×10¹⁶ cm^-3, 其值高于β-Ga₂O₃晶体约1个数量级。In:Ga₂O₃晶体电学性能对热处理敏感, 1200℃空气气氛和氩气气氛退火后电导率降低。结果表明, In³⁺离子掺杂能够调控β-Ga₂O₃晶体的导电性能。     

热处理对Mg-Al-Si-Ti-B系微晶玻璃析晶及介电性能的影响

采用差热分析仪(DSC), X射线衍射仪(XRD)及扫描电子显微镜(SEM)等测试手段, 研究了不同烧结制度下19MgO-23Al₂O₃-53SiO₂-4TiO₂-2.5B₂O₃(wt%, M-A-S-T-B)系微晶玻璃样品的析晶过程、相成分与含量及微观形貌, 并分析了核化与晶化时间对材料微波介电性能的影响关系。结果表明, 根据玻璃受控析晶机制, 当热处理制度为850℃/2 h+950℃/2 h时, 斜顽辉石(MgSiO₃)相得以较好的析出, 且伴随有α-堇青石(Mg₂Al₄Si₅O₁₈)、镁铝硅酸盐(xMgO-yAl₂O₃-zSiO₂)和方石英(α-SiO₂)相的析出。随着核化时间的延长, M-A-S-T-B体系各晶相种类及析出量变化不明显; 而随着晶化时间的延长(20 h), 材料的晶化程度提高, 品质因数(Q×f)得以提升, 颗粒状晶粒析出趋于显著; 但当晶化时间进一步延长至30 h时, 样品致密度降低, 介电损耗略有增大。在热处理制度为850℃/2 h+950℃/20 h下, 样品获得的微波介电性能较优: ε_r=3.85、τ_f ≈-5.37×10^-6/℃和Q×f ≈12740 GHz(f₀=13.973 GHz)。     

Ti1.0Cr1.5V1.7合金的氢同位素效应

采用电弧熔炼的方法, 制备了Ti_1.0Cr_1.5V_1.7合金。通过SEM、EDS和XRD对合金的形貌、组成及其氢化物的结构进行表征。结果表明, 合金组成不均匀, 存在网状的析出相。吸氢过程中的相转变只与吸氢量有关, 而与氢同位素种类无关。分离因子(α_H-D)测试表明, 压力对α_H-D的影响不大, 但氘丰度的增加会导致α_H-D的降低。温度对α_H-D的影响较复杂。α_H-D在213 K时有极大值2.29。当温度高于213 K时, α_H-D的实验值与谐振模型的计算值符合得很好, 且lnα_H-D与1/T之间存在线性关系; 当温度低于213 K时, 实验值与计算值之间存在较大差异。Ti_1.0Cr_1.5V_1.7合金氢化物的DSC分析结果表明, α_H-D在低温时的突变与相转变之间并无直接的联系。     

水滑石的合成、改性及其在功能复合材料中的应用

介绍了水滑石的结构和性能,分析了其典型的层状结构及其离子可交换性;着重介绍了水滑石的合成方法,如共沉淀法、离子交换法和焙烧还原法等,并对比了各种方法的特点;水滑石的改性主要是进行有机化改性,改性之后的水滑石才能与聚合物之间产生良好的结合力;重点综述了水滑石与高分子材料复合以后制备的功能材料或纳米复合材料的研究进展,以期为水滑石的进一步研究提供帮助.     

有机/无机杂化室温固化热控涂层的制备

以正硅酸乙酯(TEOS)与硅氧烷共水解缩聚反应制备得到粘结剂,然后与作为固化催化剂的3-氨基丙基三乙氧基硅烷(APTES)和作为光学颜料的ZnO粉末混合,制备了一系列有机-无机杂化热控涂层(TCCS)。所制备的热控涂层可以在室温下自然固化, 且具有较低的太阳吸收比α_S和较高的发射率ε_H。红外光谱(FT-IR)和凝胶色谱(GPC)分析结果表明,所制备的混合粘结剂含有大量的活性羟基,聚合度适中。热重分析(TGA)表明,所制备的热控涂层在200℃以下具有良好的热稳定性。通过增加涂层厚度可以降低α_S/ε_H值,通过提高TEOS含量,可以降低涂层在红外波段的光学吸收。这为获得具有低α_S/ε_H值的室温固化TCCS提供了有效途径。     

电流密度对MgO-ZnO陶瓷薄膜结构和热控性能的影响

在Zn(H₂PO₄)₂电解液中, 利用微弧氧化技术在AZ31镁合金表面原位生长MgO-ZnO热控陶瓷薄膜, 研究了电流密度对薄膜结构组成、结合强度和热控性能的影响, 以及紫外辐照作用下薄膜太阳吸收率的变化规律。结果表明：薄膜主要由MgO、ZnO和非晶态物质组成, 随着电流密度增大, 微孔数量逐渐减少而粗糙度逐步增大, 其厚度、结合强度和发射率先增大后减小, 而太阳吸收率则先减小后增大。电流密度9 A/dm²时所得薄膜的结合强度达到最大12.6 MPa, 且热控性能最佳, 其发射率为0.872, 太阳吸收率为0.363; 且随着紫外辐照时间延长, 此薄膜太阳吸收率先升高而后趋于平缓。研究结果为制备良好结合强度和抗紫外辐照能力的低吸收高发射热控薄膜提供技术 支持。     

A large area liquid scintillation multiphoton detector

A 60 layer lead-liquid scintillator shower detector, which we call the SLIC, has been used for multiphoton detection in the Fermilab tagged photon spectrometer. The detector has an unimpeded active area which is 2.44 m by 4.88 m and is segmented, by means of teflon coated channels, into 3.17 cm wide strips. The 60 layers in depth are broken into three directions of alternating readouts so that three position coordinates are determined for each shower. At present the readouts are made by 334 photomultiplier tubes coupled to BBQ doped wavelength shifter bars which integrate the entire depth of the detector. It is relatively straightforward to increase the number of readouts to include longitudinal segmentation and to increase the segmentation of the outer region which are at present read out two strips to a readout. The energy and position resolutions of isolated showers are about and 3 mm., respectively. The SLIC has been used to study the K⁻π⁺π⁰ decay of the D⁰ [1], as well as for electron and muon identification in ψ → e⁺e⁻ and ψ → μ⁺μ⁻ plus π⁰ identification in γp → ψχ [8].     

The nuclear fluctuation width and the method of maxima in excitation curves

The method of counting maxima of excitation curves in the region of the occurrence of nuclear cross section fluctuations is extended to the case of the more realistic maxima defined as a sequence of five points instead of the simpler and commonly used case of a sequence of three points of an excitation curve. The dependence of the coefficient b⁽⁵⁾(κ), relating the number of five-point maxima and the mean level width Γ of the compound nucleus, on the relative distance κ of excitation curve points is calculated. The influence of the random background on the coefficient b⁽⁵⁾(κ) is discussed and a comparison with the properties of the three-point coefficient b⁽³⁾(κ) is made — also in connection with the contribution of the random background. The calculated values of b⁽⁵⁾(κ) are well reproduced by the data obtained from the analysis of artificial excitation curves.     

On the applied stress dependence of the subgrain size

The present work studies the collection of experimental data from which Raj and Pharr (Mater. Sci. Eng., 81 (1986) 217) deduced a universal empirical dependence of the subgrain size on the applied stress. In accord with their result and some theoretical predictions the normalized subgrain size d_s/b was ssumed to be proportional to G/σ (G is the shear modulus, b the Burgers vector length, σ the applied stress). The evaluated factor of proportionality K₁, having the value within the interval from 0.76 to 180 in the inspected data sets, was discussed from the point of view of various factors which can influence the experimental data.     

Total energy calculation for the uniform electron gas in the GW approximation

Expressing the self-energy operator, Σ, in the GW approximation as GW (where G is the Green function of a free electron and W is the screened interaction potential), we have calculated the total energy of a uniform electron gas in terms of one-particle state energies and normalization factors describing the one-particle state contributions to the ground state of the system, at different densities r_s. The results of our calculations are in rough coincidence with the RPA (random phase approximation) total energies for r_s = 0.5, 0.7, 1.5, 2.5, 3.0, 4.0 and are in good coincidence for r_s = 1.0, despite differences in basic assumptions. r_s is determined according to 4πr_s³a₀³/3 = 1/n where a₀ is the Bohr radius and n is the number of particles per unit volume. At low densities, r_s > 1, we find there are unphysical solutions of Dyson's equation, with negative normalization factors. They were ignored in our total energy calculations. Such solutions were also obtained by Hedin, et al in 1967 but were not correctly interpreted. Our results have implications for the anticipated application of this methology to real materials.     

Influence of in-plane fibre orientation on mode I interlaminar fracture toughness of stitched glass/polyester composites

The influence of in-plane fibre orientation on the mode I interlaminar fracture toughness, G_Ic of unstitched and stitched glass/polyester composites is investigated in this paper. The G_Ic of planar specimens depends on the fibre orientation, θ in the layers adjacent to the fracture plane, in addition to the property of matrix material. The mode I fracture toughness and fracture behavior of unstitched and stitched 0/0, 30/−30, 45/−45, 60/−60, 90/90 and 0/90 interfaces of unidirectional fibre mats (UD) and 30/−30, 45/−45 and 90/90 interfaces of woven roving mats (WRM) are studied. WRM layer orientation is represented by the direction of warp fibres. Stitching is done by untwisted Kevlar fibre roving of Tex 175 g/km at the stitch densities (number of stitches per unit area) of 10.24 and 20.48 stitches/inch². The specimens having same stitch density, but different stitch distributions are prepared, and the influence of stitch distribution on G_Ic is studied. Double cantilever beam (DCB) tests are carried out and the G_Ic is determined using modified beam theory. The G_Ic of both unstitched and stitched specimens increases with increase in orientation angle, θ upto 45° above which it decreases. The G_Ic values of unstitched 45/−45 delamination interface is around 2.4 times that of the unstitched 0/0 interfaces. The influence of fibre orientation on G_Ic is clearly observed in unstitched specimens, whereas in the stitched specimens, stitching plays an important role in improving the G_Ic and suppresses the influence of fibre orientation; degree of suppression increases with increasing stitch density. When the value of θ is above 45°, transverse cracks are observed in the delamination interface surrounded by UD layers; while in the delamination interface surrounded by WRM layers, transverse cracks are not initiated irrespective of the fibre orientation angle.     

Homogenization kinetics of a cast Ti48A12W0.5Si alloy

The homogenization kinetics of a cast Ti48A12W0.5Si alloy with a duplex microstructure was studied in terms of γ-phase dissolution and -grain growth. It was found that the measured volume fraction of remnant γ grains can be well simulated by a model of interface-controlled dissolution in a dislocation mechanism, instead of a diffusion-controlled one. The activation energy for the /γ interface reaction was found to be Q_int = 476 kJ mol⁻¹, which is much higher than the interdiffusion activation energy in TiAl alloy. The grain growth of phase during homogenization can be categorized into three stages. During the first stage, where the volume fraction of remnant γ grains is higher than about 10%, the growth of grains follows the parabolic law D = k₁t^0.2, and the activation energy for grain growth was calculated to be Q₁ = 442 kJ mol⁻¹, very close to the Q_int for /γ interface reaction. In the second stage, where few fine γ grains (1–10 vol.%) remained, a dramatic grain growth occurs. During the final stage, as the single phase is obtained, the coarsening of grains again satisfies the grain growth law D = k₃t^0.4, with the grain growth activation energy Q₃ of 147 kJ mol⁻¹, lower than the reported interdiffusion energy of γ phase.     

α-MnO2纳米线的制备及其在锂氧气电池中的应用

锂氧气电池由于其极高的能量密度被认为是一种很有前途的储能系统。二氧化锰基材料被认为是锂空气电池阴极的低成本且高效的催化剂。在本研究中, 通过水热法合成了不同长度的α-MnO₂纳米线并对其在锂氧气电池中的电化学性能进行了研究。X射线衍射和场发射扫描电镜证实了α-MnO₂的形成。由α-MnO₂纳米线组装的锂氧气电池在电流密度为100 mA/g、放电截止电压为2 V时, 以正极总质量为计算标准, 放电容量高达12000 mAh/g。当限定放电容量为500 mAh/g时, 电池能够有效循环超过40次, 显现出良好的循环稳定性。这些结果表明, α-MnO₂纳米线可以作为锂氧气电池的催化剂。     

(Fe,Ti) 16N2 films with high saturation magnetization prepared by facing target sputtering

(Fe,Ti)-N films with a Ti concentration of 10 at.% were prepared on Si(100) and NaCl substrates by facing targets sputtering. The effects of the nitrogen pressure (P_N) and the substrate temperature (T_s) on the formation of various (Fe,Ti)-N phases and their microstructures were investigated in detail. X-ray diffractometer and transmission electron microscope provided complete identification of the phases present in the films and the characterization of their microstructures. Films deposited at a lower P_N = 1 3 × 10⁻² Pa or a lower T_s = RT consist of mainly -phase. Films deposited at a higher P_N = 1.3 2 × 10⁻¹ Pa or a higher T_s = 200 °C contain a great many γ' and Fe₂N phases with a higher nitrogen content. When P_N = 4 7 × 10⁻² Pa and T_s = 100 150 °C, it is advantageous to the formation of ′' phase. These films exhibit a high saturation magnetization (M_s) up to the range of 2.3 2.5 T, which is larger than that of pure iron.