高可靠性Cu BCE a-IGZO TFTs的制作

背沟道刻蚀型（BCE）非晶氧化铟镓锌薄膜晶体管（a-IGZO TFT）具有工艺简单、寄生电容小以及开口率高等优点,但BCE IGZO器件背沟道易受酸液和等离子体损伤,进而引起TFT均匀性和稳定性等方面问题,随着GOA技术的导入,对TFT器件电学性能的均匀性和稳定性提升的要求也日益迫切,因此开发高信赖性BCE IGZO TFT是技术和市场的迫切要求。本文主要分析了基于IGZO的背沟道刻蚀型薄膜晶体管电学性质,通过优化钝化层材料,色阻材料以及GOA TFT结构等削弱因背沟道水汽吸附引起的器件劣化,偏压温度应力测试结果显示优化后的TFT展现了良好的稳定性——在80℃,栅极30 V负向偏压条件下,2 000 s的ΔV_th小于1 V。最终,利用优化的IGZO TFT制作了215.9 mm（85 in）8K4K 120 Hz液晶显示器。     

高可靠性Cu BCE a-IGZO TFTs的制作（英文）

背沟道刻蚀型(BCE)非晶氧化铟镓锌薄膜晶体管(a~-IGZO TFT)具有工艺简单、寄生电容小以及开口率高等优点,但BCE IGZO器件背沟道易受酸液和等离子体损伤,进而引起TFT均匀性和稳定性等方面问题,随着GOA技术的导入,对TFT器件电学性能的均匀性和稳定性提升的要求也日益迫切,因此开发高信赖性BCE IGZO TFT是技术和市场的迫切要求。本文主要分析了基于IGZO的背沟道刻蚀型薄膜晶体管电学性质,通过优化钝化层材料,色阻材料以及GOA TFT结构等削弱因背沟道水汽吸附引起的器件劣化,偏压温度应力测试结果显示优化后的TFT展现了良好的稳定性——在80℃,栅极30V负向偏压条件下,2 000s的ΔV_(th)小于1V。最终,利用优化的IGZO TFT制作了215.9mm(85in)8K4K120Hz液晶显示器。     

双层有源层非晶铟镓锌氧化物薄膜晶体管的仿真

采用SILVACO软件的ATLAS对双有源层非晶铟镓锌氧化物薄膜晶体管进行二维器件模拟,研究了在底栅顶接触的结构下,不同沟道厚度比的情况下的器件的电学特性。在IZO材料的厚度为5nm、IGZO材料的厚度为35nm时,器件的最佳开关电流比约为3.5×1013,亚阈值摆幅为0.36V/dec。并在此厚度比的基础上,模拟了两层材料的隙态密度,并通过改变态密度模型中的相关参数,观察两层材料对器件的电学特性的影响情况。     

沟道层带尾态密度和厚度对a-IGZO薄膜晶体管特性影响的数值仿真

建立了非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(thin-film transistor, 简称TFT)的仿真模型,仿真分析了IGZO半导体层带尾态密度和沟道层厚度两个参数对IGZO TFTs特性的影响规律.研究结果表明,当半导体层带尾态密度增加到1.5×1019 cm-3·eV-1及以上时,器件电学特性受深陷阱态影...     

CuPc有机薄膜晶体管稳定性研究

以酞菁铜为有源层,二氧化硅为绝缘层,钛/金作为电极,制作了沟道宽长比为6 000/10的有机薄膜晶体管。通过比较在不同时期器件在空气环境中的电学特性,分析了环境对器件电学性能的影响。结果表明,在其他条件不变的情况下,当器件置于空气中时,其载流子的浓度和体电导率逐渐增大,迁移率几乎不受影响;相同栅极电压下器件达到饱和状态所需的源漏电压增大,线性区向饱和区推进;阈值电压减小,在栅极电压为0时,界面处逐渐形成导电沟道,器件从增强型向耗尽型转变。     

基于喷墨打印的In2 O3/IGZO TFT的电学性能

利用喷墨打印技术制备了非晶铟镓锌氧化物(IGZO)薄膜、铟氧化物(In_2O_3)薄膜和性能明显改善的双层In_2O_3/IGZO异质结沟道薄膜,研究了薄膜的物理与电学特性。结果表明,喷墨打印制备的金属氧化物薄膜具有较高的光学透过率与较低的表面粗糙度;嵌入的In_2O_3层薄膜能减小IGZO与In_2O_3间的界面缺陷,明显提高In_2O_3/IGZO薄膜晶体管(TFT)的性能及其偏压稳定性。随着IGZO中In含量的增加,载流子浓度升高,器件的迁移率增大,但In_2O_3与IGZO间能级势垒会逐渐降低,最后导致难以控制关态电流和阈值电压,因此,适当调整In的比例有利于获得较高器件性能的In_2O_3/IGZO异质结沟道TFT。     

杂质吸附对背栅MoS2场效应晶体管电学性能的影响

为了探究MoS2（二硫化钼）薄膜吸附的杂质分子对载流子输运以及相关器件的电学性能造成的影响,制备了多层MoS2背栅场效应晶体管。实验结果表明：当MoS2器件的沟道暴露在空气中时,在不同的偏压条件和扫描条件下,器件表现出不同的回滞窗口和不同的亚阈值斜率。因此,只有减小了外界吸附分子的影响,才能获得具有稳定电学性能的MoS2器件,并确保迁移率、亚阈值斜率、开启电压等重要电学参数的可靠性。     

不同沟道宽长比有机薄膜晶体管性能的研究

以酞菁铜为有源层,二氧化硅为绝缘层,钛/金作为电极,制作了三种不同沟道宽长比的有机薄膜晶体管器件。通过对这三种器件的电学特性进行对比,分析了不同沟道宽长比对器件电学性能的影响。结果表明,沟道宽长比对器件的迁移率影响很小,阈值电压随着宽长比的增大而减小,漏电流随沟道宽长比的增大而增大;当源漏极间电压在一定范围内时,开态电流也随沟道宽长比的增大而增大。     

氧分压对铟镓锌氧薄膜晶体管性能影响

采用标准的液晶显示屏基板制备工艺制备出铟镓锌氧薄膜晶体管(IGZO-TFT),通过调节IGZO薄膜工艺中氧分压,研究不同氧分压对TFT器件电学性能的影响。实验结果表明,所有器件都展现出良好的电学特性,随着氧分压从10%增加到50%,TFT的阈值电压由0.5 V增加到2.2 V,而亚阈值摆幅没有发生变化。在栅极施加30 V偏压3600 s后,随着氧分压的增加,阈值电压向正向的漂移量由1 V增加到9 V。经过分析得出高氧分压的IGZO-TFT器件中载流子浓度低,建立相同导电能力的沟道时所需要栅极电压会更大,阈值电压会增加。而在金属-绝缘层-半导体(MIS)结构中低载流子浓度会导致有源层能带弯曲的部分包含更多与电子陷阱相同的能态,栅介质层(GI)会俘获更多的电子,造成阈值电压漂移量较大的现象。     

不同狭缝与遮挡条设计对TFT特性的影响与规律(英文)

通过对掩膜版上不同狭缝与遮挡条设计与TFT沟道形貌、电学特性相互关系的分析,发现随着狭缝与遮挡尺寸的减小,TFT的电学特性、沟道处光刻胶起伏与最终关键尺寸偏移量都会改善。狭缝的尺寸比遮挡条的尺寸对TFT特性的影响更加显著。考虑到沟道转角处的短路几率问题,小的狭缝与遮挡条尺寸设计更加适合于四次掩膜光刻工艺,转角处的缺陷可以通过调整遮挡条的尺寸来避免。     

Photopatternable Conductive PDMS Materials for Microfabrication

Conductive photodefinable polydimethylsiloxane (PDMS) composites that provide both high electrical conductivity and photopatternability have been developed. The photosensitive composite materials, which consist of a photosensitive component, a conductive filler, and a PDMS pre‐polymer, can be used as a negative photoresist or a positive photoresist with an additional curing agent. A standard photolithographic approach has been used to fabricate conductive elastomeric microstructures. Feature sizes of 60 µm in the positive photoresist and 10 µm in the negative photoresist have been successfully achieved. Moreover, as the conductive filler, silver powders significantly improve the electrical conductivity of the PDMS polymer, but also provide enhanced mechanical and thermal properties as well as interesting biological properties. The combined electrical, mechanical, thermal, and biological properties along with photopatternability make the PDMS‐Ag composite an excellent processable and structural material for various microfabrication applications.     

Size dependence of the magnetic and electrical properties of thespin-valve transistor

The electrical and magnetic properties of the spin-valve transistor (SVT) are investigated as a function of transistor size. A new fabrication process, designed to study the size dependence of the SVT properties, uses: silicon-on-insulator (SOI) wafers, a combination of ion beam and wet etching and a negative tone photoresist (SU8) as an insulating layer. The Si/Pt emitter and Si/Au collector Schottky barrier height do not depend on the transistor dimensions. The parasitic leakage current of the Si/Au collector is, however, proportional to its area. The relative collector current change with magnetic field is 240%, independent of size, while the transfer ratio starts to decrease for SVTs with an emitter area below 25 × 25 μm². The maximum input current is found to be limited by the maximum current density allowed in the base (1.7 × 10⁷ A/cm²), which is in agreement with the maximum current density for spin valves     

Preventing dielectric damage of low-k organic siloxane by passivation treatment

An organic SOG, the Hybird-Organic-Siloxane-Polymer (HOSP), has high applicability to ULSI processes, because of the low dielectric constant of about 2.5. However, the HOSP film will be damaged after photoresist removal. The function groups of HOSP will be destroyed by O₂ plasma ashing and chemical wet stripper, which leads to electrical degradation. In order to avoid the issue, H₂ plasma treatment is proposed to prevent HOSP film from photoresisit stripping damage. It is found that leakage current is decreased significantly and the dielectric constant is still maintained at a low k value even after photoresist stripping. Therefore, H₂ plasma treatment is an effective technique to enhance the resistance of HOSP film against photoresist stripping damage.     

Effects of HgCdTe on the Optical Emission of Inductively Coupled Plasmas

Inductively coupled plasmas (ICP) are the high-density plasmas of choice for processing HgCdTe and related compounds. Real-time examination of the ICP plasmas used to process HgCdTe would be desirable. In this preliminary study, the feasibility of using optical emission spectroscopy (OES) of ICP plasma used for processing HgCdTe has been examined. We have examined the utility of OES as a real-time diagnostic tool for HgCdTe device fabrication. In this preliminary study it has been found that mercury and cadmium can be detected but are dependent on several factors: sample area, material composition, etch rate, sample temperature, photoresist area, and plasma power. Furthermore, we found strong correlation between the amount of hydrogen detected by OES for samples with photoresist versus samples without photoresist while processing with hydrogen-based plasma. Hydrogen emission intensity decreased dramatically in samples with photoresist, contrary to the theory that photoresist adds hydrogen to the plasma effluent. It appears that hydrogen complexes with photoresist, reducing the global amount of hydrogen during the process. Furthermore, this phenomena may help to explain macroloading issues whereby additional photoresist area slowed HgCdTe, CdTe, and photoresist etch rates.     

Investigation of photoresist-specific optical proximity effect

Optical proximity effects arising from individual resist characteristics are investigated. The parameters studied are those used in photoresist exposure and development simulation using the SOLID and Prolith/2 programs. The optical proximity effect is found to be independent of the exposure parameters but greatly affected by the development process and is shown to be a function of the Mack parameter, n, which is related to the resist contrast, γ. Finally, in order to put this effect into perspective with other resist selection criteria, the development parameter, n, is also shown to be related to wall angle and depth-of-focus (DOF).

The results of this investigation will therefore enable the user to select the most appropriate photoresist for a specific application.     

Cover Picture: An Epoxy Photoresist Modified by Luminescent Nanocrystals for the Fabrication of 3D High‐Aspect‐Ratio Microstructures (Adv. Funct. Mater. 13/2007)

M. Lucia Curri and co‐workers report on p. 2009 an epoxy‐based negative tone photoresist that can be functionalized with red emitting CdSe@ZnS core/shell type nanocrystals and patterned by UV lithography. The 3D high aspect ratio of the microfabricated structures proves that lithographic properties of the functional nanocomposite are retained and the nanocrystals properties conveyed into the resist. The emitting nanocomposite represents a convenient model for material functionalization expandable to nanocrystals with different properties. An epoxy‐based negative‐tone photoresist, which is known as a suitable material for high‐aspect‐ratio surface micromachining, is functionalized with red‐light‐emitting CdSe@ZnS nanocrystals (NCs). The proper selection of a common solvent for the NCs and the resist is found to be critical for the efficient incorporation of the NCs in the epoxy matrix. The NC‐modified resist can be patterned by standard UV lithography down to micrometer‐scale resolution, and high‐aspect‐ratio structures have been successfully fabricated on a 100 mm scaled wafer. The “as‐fabricated”, 3D, epoxy‐based surface microstructures show the characteristic luminescent properties of the embedded NCs, as verified by fluorescence microscopy. This issue demonstrates that the NC emission properties can be conveniently conveyed into the polymer matrix without deteriorating the lithographic performance of the latter. The dimensions, the resolution, and the surface morphology of the NC‐modified‐epoxy microstructures exhibit only minor deviations with respect to that of the unmodified reference material, as examined by means of microscopic and metrologic investigations. The proposed approach of the incorporation of emitting and non‐bleachable NCs into a photoresist opens novel routes for surface patterning of integrated microsystems with inherent photonic functionality at the micro‐ and nanometer‐scale for light sensing and emitting applications.     

A self-aligned offset polysilicon thin-film transistor usingphotoresist reflow

A simple fabrication method for a self-aligned offset structure, which uses photoresist reflow, is developed to reduce the leakage current of polysilicon thin-film transistors (poly-Si TFTs). The reflow of photoresist can be controlled by varying photoresist thickness and reflow temperature. It is found that the reflow length increases in proportion to the photoresist thickness, and increases with increasing reflow temperature at less than 200°C for the AZ5214A photoresist. Poly-Si TFTs are successfully demonstrated with offset lengths of 0.4 and 0.6 μm, which show apparent reduction of the leakage current     

用阻容保护装置抑制真空断路器的操作过电压

本文阐述了真空断路器用ＲＣ保护装置的原理。分析了用ＲＣ保护装置保护电力系统及其设备的试验结果。ＲＣ保护装置主要参数的选择。最后，讨论了有关ＲＣ保护装置的一些问题。     

Studies of electrical properties of microchannel plates during and after high-temperature vacuum bakeout

During the present investigation, attempts have been made to gain an insight into the nature of physical phenomena which are responsible for causing reversible and irreversible changes in the electrical characteristics of microchannel plates (MCP's) as a result of high-temperature vacuum bakeout. It has been found that during the vacuum bakeout of an MCP there exists a transition temperature which determines the occurrence of reversible and irreversible changes in the electrical characteristics of an MCP. At temperatures below the transition temperature, the electrical conduction in an MCP is primarily through the surface and the observed changes are associated with outgassing alone and are reversible in nature. At temperatures above the transition temperature, the electrical conduction in an MCP is found to be through the bulk and predominantly ionic in nature. Such ionic movements through the bulk, it is believed, are responsible for causing the observed irreversible changes in the electrical properties of an MCP. An empirical formula for the variation of MCP strip current as a function of its temperature below the transition temperature has been obtained. The room-temperature values of strip current and electron gain of various MCP's before and after the high-temperature vacuum bakeout have been compared.