溅射功率对射频磁控溅射Al掺杂ZnO（ZAO）薄膜性能的影响

用射频磁控溅射技术,在纯氩气氛中不同溅射功率（120 W~210 W）下于玻璃衬底上制备了Al掺杂ZnO（ZAO）薄膜。利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、光谱仪和四探针测试仪等对所制备的薄膜进行了晶体结构、光学和电学性能分析。结果表明,纯氩气氛中不同溅射功率下玻璃衬底上原位沉积的ZAO薄膜具有明显的c轴择优取向性,它没有改变ZnO的六角纤锌矿结构;ZAO薄膜的可见光区平均透光率不强烈依赖于溅射功率,为75%左右;原位沉积ZAO薄膜的电阻率达到102Ω.cm数量级范围,随溅射功率由120 W增大到210 W时,薄膜电阻率从132.67Ω.cm降低到21.08Ω.cm。     

The effect of substrate bias voltage on PbTe films deposited by magnetron sputtering

The PbTe films were deposited onto ITO glass substrate by radio frequency magnetron sputtering. Effect of external direct current electrical field applied between substrate and target on the quality of films was investigated. Stylus surface profile, X-ray diffraction (XRD), atomic force microscope (AFM) and Fourier transform infrared spectroscopy (FTIR) were used to characterize the films. The film thickness was measured by a conventional stylus surface profile. The crystal structure and lattice parameters of films were determined by using XRD. The surface morphology of the films was measured by AFM. The absorption coefficients and optical band gaps of films were found from FTIR. The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated. All the obtained films were highly textured with a strong (2 0 0) orientation. With increasing bias voltage to −30 V, the property of crystal structure, surface morphology and absorption coefficients and resistivity were improved. However, further increase of substrate bias leads to transformation of the property.     

钼合金磁控溅射镀镍薄膜工艺及后续热处理

目的优化钼表面直流磁控溅射镀镍薄膜的工艺,提出后续热处理方法。方法设计正交实验,探究溅射功率、溅射气压、负偏压和沉积时间对镍薄膜沉积速率和附着力的影响,从而优化工艺参数。利用扫描电镜和平整度仪对最佳工艺参数下制备的薄膜的组织结构进行表征,并研究后续热处理对薄膜附着力的影响。结果工艺参数对镀镍薄膜沉积速率影响的主次顺序为:功率溅射气压负偏压;对薄膜附着力的影响主次顺序为:负偏压沉积时间功率溅射气压。随溅射功率增大,沉积速率增大,薄膜附着力先增后减;随溅射气压增大,沉积速率和薄膜附着力均先增后减。负偏压增大对沉积速率影响较小,但有利于提高薄膜附着力。随沉积时间延长,薄膜附着力降低。在氢气气氛下进行850℃×1 h的后续热处理,能够促进扩散层的形成,明显提高镍薄膜的附着力。结论最佳镀镍工艺参数为:溅射功率1.8 k W,溅射气压0.3 Pa,负偏压450 V,沉积时间10 min。在该条件下制备的镍薄膜厚度达到1.15μm左右,与基体结合紧密,表面平整、连续、致密。后续增加热处理工序是提高镍薄膜附着力的有效方法。     

铬过渡层对氮化铬/镁合金膜基界面结合强度的影响

为了提高磁控溅射氮化铬膜与镁合金基底的结合强度,在两者之间以不同工艺溅射沉积铬过渡层,分析并讨论了铬过渡层对膜基界面结合强度的影响及其机制。结果表明,在镁合金/氮化铬之间增加铬过渡层可提高表征膜基结合强度的膜层破裂临界载荷,且当铬过渡层的溅射工艺为溅射功率100 W、负偏压30 V、基底温度25 ℃、溅射时间4 min时膜层破裂临界载荷最大,此工艺下铬过渡层表面在微观上具有最大的粗糙度和最小的突起间隔;铬过渡层增强界面结合的作用主要表现为改善了氮化铬与镁合金基底之间的结合状况,与铬/氮化铬接界面积较大且能有效机械互锁、铬过渡层缓减了界面应力等机制有关。     

Dependence of characteristics of LaB6 films on DC magnetron sputtering power

Lanthanum hexaboride(LaB₆) thin films were deposited on glass substrate by DC magnetron sputtering technology, and the AFM, XRD and scratch tests were used to characterize the deposited films. Influences of sputtering power on the microstructure and the bonding strength between the film and substrate were investigated. AFM observation proves that the dense films are obtained, and the surface roughness is below 4.3 nm. The LaB₆ film shows the crystalline structure with the grain less than 100 nm. The XRD pattern identifies that the crystal structure of the films is in accordance with that of bulk LaB₆, and the (100) crystal face is dominated. The average grain size decreases firstly and then increases with increasing power, and reaches the minimum of 40 nm when the sputtering power is 44 W. Moreover, the intensity of peaks in XRD pattern increases firstly and decreases afterward with increasing power. When the sputtering power is 50 W, the peak intensity reaches the maximum, showing an intense relationship between the power and crystal structures. The scratch test shows that interface bonding strength of the film/substrate is higher at the power of 44 W than the others, due to the formation of the nanosized crystals and their improved surface energy.     

Influence of process parameters on electrochemical and physical properties of sputtered iron-doped nickel oxide thin films

1Introduction A principal focus of modern research in electrocatalysis is to discover electrode materials that exhibit excellent electrochemical stability and show interesting activity towards typical electrochemical reaction[1?10].It is desirable that th…     

制备工艺对超磁致伸缩Fe-Ga合金薄膜表面形貌的影响

采用JZCK-600F型多功能镀膜设备制备了Fe-Ga合金薄膜,研究了溅射工艺对Fe-Ga合金薄膜沉积速率及表面形貌的影响。用SEM、EDS研究了Fe-Ga合金薄膜的表面形貌和薄膜成分。当其他工艺参数不变时,溅射时间、溅射功率是影响Fe-Ga合金薄膜的厚度和生长速率的主要因素。随溅射时间和功率的增加,薄膜厚度和沉积速率也随之增加,并且薄膜厚度与溅射时间和功率呈现出正比例关系;但是薄膜厚度过大,加大的内应力会使薄膜剥离。溅射功率过大时,内应力同样会使薄膜内部出现裂纹。所制备Fe-Ga合金薄膜的磁畴图像明暗对比明显。磁畴形状呈现不太规则的团圈状,类似珊瑚结构。薄膜的结晶化生长良好,薄膜形貌为较均匀致密的颗粒状结构。优化的薄膜溅射工艺参数为溅射功率80 W、溅射工作气压0.6 Pa、溅射时间60 min、Ar气工作流量25 mL/min。采用此优化工艺制备的Fe-Ga合金磁致伸缩薄膜悬臂梁偏移量为69.048 μm,可满足制备微器件所需性能。     

Investigation of the mechanical properties of aluminium oxide thin films on polymer substrates by a combination of fragmentation and scratch testing

This paper reports the combination of two mechanical tests on AlOx coatings on polymer film, of the kind that can be used for gas barrier layers: uniaxial fragmentation tests and nano-scratch tests. The resulting morphology of the film, as characterised by AFM at different points along the scratch test, is very informative of the nature of the coating failure, and combined with FTIR studies of the oxides can explain the observed differences in the quantitative mechanical tests. As an illustration of the capability of these methods to distinguish differences between coatings on the same substrate with the same nominal chemistry, a comparison between three AlOx coatings on polyethylene naphthalate (PEN) is made. The different films were produced in comparable conditions by direct current (DC) magnetron sputtering, radio frequency (RF) magnetron sputtering and high power impulse magnetron sputtering (HiPIMS). Clear differences were measured between the coatings. The DC film showed the greatest strain-to-failure, perhaps due to a more open structure indicated by FTIR, and the HiPIMS sample showed a less homogeneous, but better adhered, coating.     

Preparation and properties of tungsten-doped indium oxide thin films

Tungsten-doped indium oxide (IWO) thin films were deposited on glass substrate by DC reactive magnetron sputtering. The effects of sputtering power and growth temperature on the structure, surface morphology, optical and electrical properties of IWO thin films were investigated. The thickness and surface morphology of the films are both closely dependent on the sputtering power and the substrate temperature. The transparency of the films decreases with the increase of the sputtering power but is not seriously influenced by substrate temperature. All the IWO thin film samples have high transmittance in near-infrared spectral range. With either the sputtering power or the growth temperature increases, the resistivity of the film decreases at the beginning and increases after the optimum parameters. The as-deposited IWO films with minimum resistivity of 6. 4× 10-4 Ω·cm were obtained at a growth temperature of 225 ℃ and sputtering power of 40 W, with carrier mobility of 33. 0 cm2· V-1·s-1 and carrier concentration of 2. 8× 1020 cm-3 and the average transmittance of about 81％ in near-infrared region and about 87％ in visible region.     

磁控溅射和退火制备ZnO/SiO2复合薄膜

采用射频磁控溅射和退火处理的方法在单晶硅衬底上制备了ZnO/SiO2复合薄膜,利用X射线衍射(XRD)、扫描电镜(SEM)、能谱分析(EDS)和接触角测量等测试手段研究溅射气压、溅射功率、氧氩比和退火温度等对复合薄膜成分组成、组织结构及润湿性能的影响。研究表明,复合薄膜中主要有ZnO、SiO2、Zn2SiO4 3种物相,且分别以六方纤锌矿结构、无定形态和硅锌矿型等形式存在。随着溅射和退火工艺的改变,复合薄膜的接触角在41°～146°间变化,组织形态由颗粒状向纳米竹叶状变化。溅射气压0.5 Pa,溅射功率120 W,氧氩比(O2∶Ar)为0∶30,退火温度为700℃的条件下获得具有六方纤锌矿结构的ZnO纳米组织,该组织呈现出竹叶状,在薄膜表面交错排列形成了无序多空隙的微观形貌,使复合薄膜具有超疏水性,接触角为146°。     

Role of deposition parameters on microstructure and mechanical properties of chromium oxide coatings

Chromium oxide coatings were deposited by reactive magnetron sputtering on high speed steel (HSS) substrate under various oxygen flow rates and radio frequency (RF) powers. The effect of deposition conditions on the microstructure, hardness and critical load of chromium oxide coating failure was studied. The results indicated that a crystalline chromium oxide coating formed at a high oxygen flow rate and a low RF power exhibited a higher hardness and a lower critical load as compared to a chromium oxide coating with an amorphous microstructure.     

Effect of radio-frequency electric power applied to a boron nitride unbalanced magnetron sputter target on the deposition of cubic boron nitride thin film

Cubic boron nitride (c-BN) films were deposited by an unbalanced magnetron sputtering method. A (100) Si wafer with a nanocrystalline diamond thin film as a surface coating layer or that without it was used as a substrate. The target power was varied from 100 to 400 W. A boron nitride target was used, which was connected to a radio frequency power supply. High frequency power connected to a substrate holder was used for self-biasing. The deposition pressure was 0.27 MPa with a flow of Ar (18 sccm) — N₂ (2 sccm) mixed gas. The existence of threshold bias voltages for c-BN formation and resputtering were observed irrespective of target power. The bias voltage window for c-BN formation broadened with increased target power. The deposition rate decreased with enhanced bias voltage and decreased target power. Residual stresses of the films did not vary noticeably with target power within the target power range of c-BN formation. A parameter space for c-BN formation according to the target power and the bias voltage, as two variables, was suggested.     

磁控反应溅射制备GexC1-x薄膜的结构

利用射频磁控反应溅射以Ar、CH4 为原料气体 ,在较宽的工艺参数范围内制备出了GexC1-x薄膜。利用X射线衍射 (XRD)、X射线光电子谱 (XPS)对制备的薄膜进行了分析。结果表明 ,GexC1-x薄膜的结构强烈依赖于制备的工艺参数。当沉积温度较低、射频功率不大时 ,GexC1-x薄膜主要为非晶态结构。随着沉积温度升高、射频功率增大 ,薄膜中出现Ge微晶相。GexC1-x薄膜中Ge与C发生电荷的转移 ,形成化学键。     

工艺参数对磁控溅射制备 TiO2 薄膜结晶性的影响

目的探究TiO2薄膜结晶性与工艺参数之间的规律。方法采用直流反应磁控溅射法,改变工艺条件(样品位置、溅射功率、氧气分压、是否开转架、沉积温度以及是否退火),在普通载玻片基底上制备TiO2薄膜,并利用XRD和SEM对不同工艺参数下获得的TiO2薄膜进行分析。结果在靶基距固定的情况下,仅改变样品悬挂的上下位置时,薄膜的结晶性差别不大。随着溅射功率在一定范围内增大,薄膜的结晶性越来越好(趋于锐钛矿晶型)。与氧气分压为5%时相比,10%时的薄膜结晶性更优;与开转架时相比,不开转架时薄膜的结晶性更优。沉积温度在300,350℃两者之间变化时,对薄膜的结晶性影响不大。退火后薄膜的结晶性优于未退火薄膜。结论样品位置、沉积温度对于TiO2薄膜的结晶性影响不大;氧气分压、是否开转架对TiO2薄膜的结晶性有一定影响;溅射功率、退火与否对TiO2薄膜的结晶性影响较大,并且退火后出现金红石相。     

氮化铀薄膜的制备及性能研究

开展了氮化铀薄膜射频制备及薄膜性能研究,通过优化氮化铀薄膜的制备工艺条件,成功在Si基片上制备了氮化铀薄膜,并利用扫描电镜、原子力显微镜、X射线电子衍射、俄歇电子能谱仪和X射线光电子能谱对氮化铀薄膜进行了表面形貌和结构组分分析。结果表明:利用射频磁控沉积法制备的氮化铀薄膜为比较平整和致密的U2N3和UNxOy的混合相组成,具有一定的抗氧化腐蚀性能。     

Au/NiCr/Ta和Au/NiCr多层金属膜的划痕特征载荷

采用摩擦力和声发射两种模式同时监测的划痕法研究了Au/NiCr/Ta和Au/NiCr多层金属薄膜的临界载荷Lc，并与TiN硬质薄膜进行了对比。实验结果表明：摩擦力和声发射模式均能反映出压头进入不同金属膜层时的变化，在单一金属薄膜层中两者均无大的变化，对应实验范围内不同的沉积温度，拐点特征载荷值基本不受其影响，而主要取决于多层膜的层厚和层数。     

大气等离子喷涂Al2O3-3%TiO2涂层的性能

利用两种中频交流磁控溅射电源,溅射Al2O3含量为2%的两块氧化锌铝陶瓷靶材,在不同衬底温度的条件下制备得到了ZAO薄膜。研究了不同衬底温度条件下不同靶材和溅射电源对ZAO薄膜结构、电学和光学性能的影响。结果表明,制备得到的ZAO薄膜均具有c轴择优取向生长的晶体结构,在衬底温度为240℃时,得到的ZAO薄膜的电阻率低至1.4×10-3Ω·cm,可见光平均透过率在82%以上。     

Influence of nitrogen implantation into HSS substrate on internal stress and adhesion strength of c-BN films

Cubic boron nitride(c-BN) films were deposited on HSS substrate implanted with nitrogen ion by RF-magnetron sputtering. The films were analyzed by bending beam method, scratch test, XRD and AFM. The results show that the implantation of N ion can reduce the internal stress and improve the adhesion strength of the films.The critical load comes to 16.92N, compared to 1.75N of c-BN film on the unimplanted HSS. AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. The phase structure of the nitrogen implanted layer was analyzed by XRD. The influence of nitrogen implanted layer on the internal stress and adhesion strength of c-BN films were also investigated.     

N2流量比对复合磁控溅射Zr-B-N薄膜结构和性能的影响

目的 在反应沉积时补充金属离子,增加薄膜中金属氮化物硬质相的数量,优化复合磁控溅射Zr-B-N薄膜的制备工艺,揭示N2流量比（N2/(N2+Ar)）对Zr-B-N薄膜结构和性能的影响规律,进一步强化Zr-B-N纳米复合薄膜。方法 采用高功率脉冲磁控溅射和脉冲直流磁控溅射复合镀膜技术沉积Zr-B-N薄膜,借助X射线衍射仪、能谱仪、扫描电镜、纳米压痕仪、划痕测试仪和摩擦试验机,研究N2流量比对Zr-B-N薄膜成分、微观结构、力学性能和摩擦性能的影响。结果 Zr-B-N薄膜具有典型的纳米复合结构,即BN非晶层包裹着ZrB2、Zr3N4、Zr2N、ZrN等纳米晶,所有Zr-B-N薄膜均沿（100）晶面择优生长。随着N2流量的增加,（100）晶面的衍射峰宽化加剧;薄膜硬度由36.2 GPa下降到21.0 GPa;膜/基结合力逐渐增强,临界载荷从34.8 N增加到55.8 N;摩擦系数逐渐增大。当N2流量比为42.9%时,摩擦系数相对较低,约为0.48,归因于薄膜内形成了沿（220）晶面生长的ZrN相,从而起到了良好的减摩作用。结论 当N2流量比为42.9%时,Zr-B-N薄膜具有纳米复合结构和良好的各项性能。     

Influence of deposition parameters on the structure and optical property of Zn(S,O) films

This paper presents the influence of process parameters, including sputtering power, oxygen partial pressure (R _O), and substrate temperature on the optical property of Zn(S,O) thin films fabricated by radio frequency magnetron sputtering technology and deposited on glass substrates. The chemical composition, structural and optical properties of the samples were investigated by electron spectroscopy for chemical analysis, X-ray diffraction, and spectrophotometer. All the films mainly exhibited β-ZnS phase with (111) preferred orientation. [S]/([S]+[O]) ratio increased at high sputtering power, low RO, and low substrate temperature. Moderate ranges in sputtering power and substrate temperature and low RO resulted in large grain size. Adatoms are expected to exhibit increased mobility under these conditions. Average transmittance exceeded 75% in the visible wavelength region. Bandgap under these conditions was dominated strongly by the change in grain size and [S]/([S]+[O]) ratio. Optical properties of Zn(S,O) thin films could be modified, which is promising for optoelectronic applications.