共查询到19条相似文献,搜索用时 140 毫秒
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采用MOCVD 方法成功地研制了具有线性GRIN 结构GaAs/AlGaAs单量子阱激光器。该激光器的峰值波长为815~825 nm ,阈值电流为130 m A。工作电流在480 m A 时,单面连续输出光功率高达200 m W,且基本保持在单模工作状态。工作在970 m A 时,单面连续输出光功率为0.5 W。 相似文献
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采用分子束外延技术生长了GaAs/AlGaAs单量子阱得多量子阱材料。采用GaAs/AlGaAs超晶格缓冲层掩埋衬底缺陷,获得的量子阱结构材料被成功地用于制作量子阱激光器。波长为778nm的激光器,最低阈值电流为30mA,室温下线性光功率大于20mW。 相似文献
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利用速率方程求出了输出反馈损耗调制型双稳半导体激光器输出光强稳态解的解析表达式。利用双区共腔GaAs/AlGaAs单量子阱半导体激光器,观测到半导体激光器在输出反馈损耗调制方式下的光双稳特性。比较速率方程解的理论计算曲线和实验观测到的双稳特性曲线后发现,两种双稳特性曲线随反馈损耗调制系数等器件参量变化的规律完全一致。 相似文献
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半导体激光器腔面SiO,Au涂层的研究 总被引:1,自引:0,他引:1
通过在GaAs/GaAlAs激光器前后腔面蒸镀SiO减反射膜和SiO、Au高反射膜的工艺过程,从理论和实验上分析涂层特性,反射率、透射率由无膜时的32%、68%提高到94%以上,提高激光输出功率和工作寿命。 相似文献
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GaAlAs激光器腔面减反射涂层 总被引:3,自引:0,他引:3
通过对波长910nm GaAs/GaAlAs激光器谐振腔面蒸镀ZrO2膜的工艺过程,从理论和实验上分析了涂层特性,透射率由无膜时62%提高到蒸镀膜后的94%以上,提高了激光器的激光输出功率和工作寿命,对器件端面起到了保护作用。 相似文献
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The temporal and spectral output of GaAs/GaAlAs buried-heterostructure lasers under excitation with 60 ps electrical pulses is investigated for different DC bias conditions. Optical pulses comparable in width to the electrical pulses can be obtained only if the DC bias is below or close to threshold, where multimode emission is observed. For DC bias well above threshold the laser remains single-mode; however, the optical pulses are considerably broadened. 相似文献
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Vassilakis E. Fillardet T. Groussin B. Cargemel V. Carriere C. 《Electronics letters》1995,31(13):1056-1057
A continuous-wave optical power density of 200 W/cm2 is reported for the first time for a 0.1 cm2 element of a surface emitting GaAs/GaAlAs wafer. The laser facets are cleaved on-wafer by a microcleavage technique. The output optical beam is reflected by 45°-integrated beam deflectors situated at a distance of 15 μm from each laser facet. The lasers were soldered junction-up on a microchannel CuW cooler. The drive current at 20 W CW is 40 A with a slope efficiency of 0.7 W/A 相似文献
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大功率半导体激光器光纤耦合模块的耦合光学系统 总被引:9,自引:0,他引:9
针对 8 0 8nm大功率 Ga As/ Ga Al As半导体量子阱激光器的远场光场分布特点 ,提出了与多模光纤耦合时对耦合光学系统的特殊要求 ,并根据低成本、实用化的要求设计制作了专用的耦合光学系统 ,对耦合光学系统的实际性能进行了测试 ,给出了耦合效率统计分布图、耦合偏差曲线和高低温可靠性实验结果 .用设计制作出的实用化耦合光学系统完成了输出功率 15— 30 W,光纤束数值孔径为 0 .11— 0 .2 2的半导体激光光纤耦合模块 ,模块的使用结果表明耦合光学系统稳定、高效、实用 相似文献
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High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm 总被引:5,自引:0,他引:5
Yi Qu Shu Yuan Chong Yang Liu Baoxue Bo Guojun Liu Huilin Jiang 《Photonics Technology Letters, IEEE》2004,16(2):389-391
Molecular beam epitaxy (MBE) growth, device fabrication, and reliable operation of high-power InAlGaAs/GaAs and GaAlAs/GaAs laser arrays are described. Both InAlGaAs/GaAs and AlGaAs/GaAs laser arrays reached maximum continuous wave output powers of 40 W at room temperature. The external quantum efficiency was 50% and 45% for the InAlGaAs/GaAs and AlGaAs/GaAs laser arrays, respectively. Threshold current density for InAlGaAs/GaAs and AlGaAs/GaAs lasers was 303 A/cm/sup 2/ and 379 A/cm/sup 2/, respectively. While the current of AlGaAs laser arrays went up significantly after 1000 h of operation at a constant power of 40 W, InAlGaAs laser arrays had an increase in the injection current of less than 4% after 3000 h at 40 W. 相似文献
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利用分子束外延技术生长出了GaAlAs/GaAs折射率渐变分别限制单量阱材料。用该材料作出的激光二极管作泵浦源对Nd:YAG激光器进行端面泵浦实验,在工作电流为3.3A时,LD输出功率为2.7W,得到Nd:YAG激光器的输出功率达700mW,光-光转换效率达20%。 相似文献
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分析了梯度折射率分别限制单量子阱 (GRIN-SCH-SQW)结构的特点以及对大功率半导体激光器特性的影响。利用分子束外延系统生长 Ga Al As/Ga As GRIN-SCH-SQW结构 ,经光荧光谱、X-射线双晶衍射、和载流子浓度测试 ,结果表明 ,该结构各参数均满足设计要求。应用此结构制成激光器阵列 ,室温准连续输出功率达5 8W(t=2 0 0 μs,f=5 0 Hz) ,峰值波长为 80 8nm。 相似文献
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A 1 X 8 GaAs/GaAlAs optical power splitter based on a MultiMode Interference (MMI) coupler is presented. The input and output single mode waveguides are optimized by the Discrete Spectral Index Method (DSIM) and a moderate square spot on the output in deepetched rib waveguides is obtained. The fabrication tolerance has been analyzed by the Finite Difference Beam Propagation Method (FDBPM). The device was fabricated by the dry etching technique and the near-field output obtained. The device shows polarization-insensitive, large fabrication tolerance, low theoretical excess loss and low power imbalance. 相似文献