共查询到20条相似文献,搜索用时 281 毫秒
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The thermal and electro stability of multi-finger heterojunction bipolar transistors (HBTs) with different structures were analyzed and discussed simultaneously. The thermal stability of the devices with different layout struc-tures was assessed by the DC-Ⅳ test and thermal resistance calculation. Their electro stability' was assessed by the calculation of the stability factor K based on the S parameter of the HBT. It is found that HBTs with higher thermal stability are prone to lower electro stability. The trade-off relationship between the two types of stability was explained and discussed by using a compact K-factor analytic formula which is derived from the small signal equivalent circuit model of HBT. The electro stability of the device with a thermal ballasting resistor was also discussed, based on the analytic formula. 相似文献
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基于SiGe HBT(异质结双极晶体管)大信号等效电路模型,建立了SiGe HBT大信号发射结扩散电容模型和集电结扩散电容模型.该模型从SiGe HBT正反向传输电流出发,研究晶体管内可动载流子所引起的存储电荷(包括正向存储电荷和反向存储电荷)的基础上,同时考虑了厄利效应对载流子输运的影响,其物理意义清晰,拓扑结构简单。将基于大信号扩散电容模型的SiGe HBT模型嵌入PSPICE软件中,实现对SiGe HBT器件与电路的模拟分析。对该模型进行了直流特性模拟分析,直流模拟分析结果与文献报道的结果符合得较好,瞬态特性分析结果表明响应度好。 相似文献
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A 3D model simulation of InP/InGaAs/InP DHBT is reported in this paper. A comprehensive set of built-in physical models are described, including Stratton''s hydrodynamic model, high-fields mobility model and thermionic emission model. A mixed-mode environment is required for AC simulation instead of simulating an isolated HBT, in which the HBT is embedded in an external circuit, and the circuit voltage and current equations are solved along with the Poisson equation and transport equations. In AC simulation, simulator Sentaurus provides the computation of the small signal admittance Y matrix. From the results of Y matrix, the small signal equivalent circuit is constructed with the conductance and capacitance obtained from Y matrix, and the AC parameters, such as S-parameters, will be calculated. The small signal AC characteristics of InP/InGaAs DHBTs under proton irradiation are simulated with different fluences of proton irradiation. Simulation results show that the maximum oscillation frequency will be degraded when fluence of proton irradiation is increased. 相似文献
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A. Oudir M. Mahdouani R. Bourguiga F. Pardo J.L. Pelouard 《Solid-state electronics》2008,52(11):1742-1750
A parameter extraction procedure for determining an improved T-topology small signal equivalent circuit of a metallic collector-up HBT with composite base is presented. The proposed T-small signal equivalent circuit includes base and collector impedances modelled by parallel RC circuits. The new technique employs analytically derived expressions for direct calculation of HBT T-Model equivalent circuit element values in terms of the measured S-parameters. This approach avoids errors due to uncertainty in fitting to large, over determined equivalent circuits and does not require the use of test structures and extra measurement steps to evaluate parasitics. Physically realistic results are demonstrated under various biasing conditions for the n–p–n InP/InGaAsP/InGaAs composed base HBT with metallic collector-up structure (C-up MHBT). The agreement between the measured and model-produced data is excellent over the large frequency range and for several polarizations conditions for devices. 相似文献
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A simple compact model, suitable for circuit simulations, is derived which enables quantitative determination of the impact of neutral base recombination on the small signal ac output resistance of SiGe HBT's for arbitrary base ac drive conditions. The model uses existing SPICE parameters which are routinely extracted from bipolar transistors plus an additional model parameter which can be extracted from a proposed experimental technique involving output resistance measurements under base ac voltage and current drive conditions. The modeling approach also enables the forward and reverse base transit times to be related to transistor small signal ac output resistance by a simple analytic expression. The currently accepted expression for the r μ parameter, which is used to model neutral base recombination in the ac hybrid-π equivalent circuit, is shown to be incorrect and is replaced by a new correct expression. Numerical simulations of a SiGe HBT structure which exhibits neutral base recombination are used to verify the validity of the model 相似文献
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An analytic expression of fmax is derived based on a practical HBT circuit model where collector junction capacitance is split up into internal and external parts. It shows that for advanced HBTs, fmax is well characterized by the product of the base resistance and internal collector capacitance. In other words, the external collector capacitance has only a small impact on the determination of fmax. Good agreement between experimental results and numerical circuit simulation confirms the validity of the HBT circuit model. The influence of the external collector capacitance on maximum available gain is also described 相似文献
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Kelvin S. C. Yong Manas K. Haldar Jeffrey F. Webb 《Journal of Infrared, Millimeter and Terahertz Waves》2013,34(10):586-597
A new simpler equivalent circuit model of a quantum cascade laser based on two level rate equations is presented. The model is valid for small and large signals. A realistic current voltage model based on experimental results is included in the circuit model. Incorporation of the current voltage characteristic makes the circuit model fully compatible with parasitics and drive electronics. The model is validated by comparison of simulated results with analytica results and large signal numerical results reported earlier. 相似文献
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本文提出了一种基于小信号等效电路的半导体激光器非线性电路模型,该模型使激光顺的调制响应和非线性特性以及其它相关电子电路的非线性特性可统一地通过通用电路分析软件来分析和计算。运用此模型对一单模激光器的二阶谐波与三阶交调失真特性进行了分析,结果与已报道的理论和实验结果一致。 相似文献
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异质结双极晶体管高频噪声建模及分析 总被引:1,自引:1,他引:0
提出了一个T等效异质结双极晶体管高频噪声电路模型.该模型是对通常用在硅双极晶体管中的Hawkins噪声模型进行改进得到的,主要的改进包括发射极理想因子、发射极电阻、内部BC结电容、外部BC结电容和其它寄生元素对器件噪声性能的影响.为了从等效噪声电路模型中计算出精确的噪声参数,采用了噪声相关矩阵法来计算噪声参数,从而避免了在等效电路变换中可能产生的简化和复杂的噪声测量.进一步利用该模型分析了等效电路元素对器件最小噪声系数的影响,分析计算结果和物理解释一致.同时通过基于异质结双极晶体管器件物理的公式,给出了器件参数对器件最小噪声系数的影响. 相似文献
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提出了一个T等效异质结双极晶体管高频噪声电路模型.该模型是对通常用在硅双极晶体管中的Hawkins噪声模型进行改进得到的,主要的改进包括发射极理想因子、发射极电阻、内部BC结电容、外部BC结电容和其它寄生元素对器件噪声性能的影响.为了从等效噪声电路模型中计算出精确的噪声参数,采用了噪声相关矩阵法来计算噪声参数,从而避免了在等效电路变换中可能产生的简化和复杂的噪声测量.进一步利用该模型分析了等效电路元素对器件最小噪声系数的影响,分析计算结果和物理解释一致.同时通过基于异质结双极晶体管器件物理的公式,给出了器件参数对器件最小噪声系数的影响. 相似文献
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用改进的遗传算法精确提取GaAs MESFET小信号等效电路参数 总被引:2,自引:0,他引:2
提出了一种改进的遗传算法 ,应用于提取 Ga As MESFET小信号等效电路参数 .改进的算法采用浮点编码连续突变 ,多种遗传操作合作运行 ,并应用子代优化策略克服了传统遗传算法可能出现的种群退化现象 ,该算法可快速搜索到全局最优解而不受初始值限制 .在 0 .1~ 1 0 GHz范围内实现了精确、快速地提取 Ga As MESFET小信号等效电路参数 ,并可合理外推至 2 0 GHz,整个过程无需人工干预 .算法用 Matlab语言实现 ,可方便地应用于 HBT和HEMT以及无源元件电容、电感的参数提取 相似文献
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对硅锗异质结双极型晶体管(SiGe HBT)等效高频噪声模型进行了研究,在建模过程中,SiGe HBT的等效电路为小信号准静态等效电路,使用二端口网络噪声相关矩阵技术从实测噪声参数提取基极和发射极的散粒噪声,提取结果与几种散粒噪声模型进行对比分析,重点研究半经验模型建立过程,对半经验模型与常用的噪声模型使用CAD仿真验证,结果表明了半经验模型的有效性、更具准确性,该半经验模型能够用到不同工艺SiGe HBT的高频噪声模拟。 相似文献
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Bilbro G.L. Steer M.B. Trew R.J. Chang C.-R. Skaggs S.G. 《Microwave Theory and Techniques》1990,38(11):1711-1718
The problem of extracting a physically based equivalent circuit model for a heterostructure bipolar transistor (HBT) from S-parameter measurements is solved with a new formulation of simulated annealing. The physical model necessary for an accurate representation of the HBT leads to an extraction problem with many local minima. A satisfactory minimum can be found by conventional gradient-based techniques only with considerable expert guidance. The proposed algorithm finds equivalent circuits as good as those from conventional techniques but without human intervention. It is more efficient than conventional stochastic simulated annealing because it accumulates a probability density of good equivalent circuits which it subsequently uses to refine its statistical search for the best equivalent circuit 相似文献
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Tzyy-Sheng Horng Sung-Mao Wu Chi-Tsung Chiu Chih-Pin Hung 《Advanced Packaging, IEEE Transactions on》2001,24(4):548-554
The electrical models of bump chip carrier (BCC) packages have been established based on the S-parameter measurement. When compared to the standard thin shrink small outline packages (TSSOPs), BCC packages show much smaller parasitics in the equivalent model. In the simulation, the insertion and return losses for a packaged 50-Ω microstrip line are calculated against frequency. BCC packages are also less lossy than TSSOPs over a wide frequency range. By setting a random variable with Gaussian distribution varied within a certain range for each equivalent circuit element of the packages, the Monte Carlo analysis has been performed to study the package effects on a GaAs heterojunction bipolar transistor (HBT). Again, BCC packages cause less decrement of HBT unity-gain bandwidth than TSSOPs 相似文献