Polysilicon thin-film transistors on polymer substrates

Different approaches to fabricate low-temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) on polymer substrates are reviewed and the two main routes are discussed: (1) standard fabrication of LTPS TFTs on glass substrates followed by a transfer process of the devices on the polymeric substrate; (2) direct fabrication of the devices on the polymeric substrate. Among the different techniques we have described in more detail the process we have recently developed for the fabrication of LTPS TFTs directly on ultra-thin polyimide (PI) substrate. LTPS TFT technology is particularly suited for high performance flexible electronics applications, due to the excellent device characteristics, good electrical stability and CMOS technology. Flexible display application remains the most attractive application for LTPS technology, especially for AMOLED displays, where device stability and the possibility to integrate the driving circuits make LTPS technology superior to all the other competitive TFT technologies. Among the other applications, particularly promising is also the application to flexible smart sensors, where integration of a front-end electronics is essential. Some examples of flexible gas sensors and pressure sensors, integrated with simple readout electronics based on LTPS TFTs and fabricated on ultra-thin PI substrate, are presented.     

Large‐Area Ultrathin Graphene Films by Single‐Step Marangoni Self‐Assembly for Highly Sensitive Strain Sensing Application

Promoted by the demand for wearable devices, graphene has been proved to be a promising material for potential applications in flexible and highly sensitive strain sensors. However, low sensitivity and complex processing of graphene retard the development toward the practical applications. Here, an environment‐friendly and cost‐effective method to fabricate large‐area ultrathin graphene films is proposed for highly sensitive flexible strain sensor. The assembled graphene films are derived rapidly at the liquid/air interface by Marangoni effect and the area can be scaled up. These graphene‐based strain sensors exhibit extremely high sensitivity with gauge factor of 1037 at 2% strain, which represents the highest value for graphene platelets at this small deformation so far. This simple fabrication for strain sensors with highly sensitive performance of strain sensor makes it a novel approach to applications in electronic skin, wearable sensors, and health monitoring platforms.     

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Solution processing, including printing technology, is a promising technique for oxide thin‐film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high composition controllability and high throughput. However, solution‐processed oxide TFTs are limited by low‐performance and stability issues, which require high‐temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution‐processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low‐temperature (<350 °C) solution‐processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n‐type and p‐type oxide‐based channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low‐temperature solution‐processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.     

Fully Printed Light‐Emitting Electrochemical Cells Utilizing Biocompatible Materials

The use of biomaterials and bioinspired concepts in electronics will enable the fabrication of transient and disposable technologies within areas ranging from smart packaging and advertisement to healthcare applications. In this work, the use of a nonhalogenated biodegradable solid polymer electrolyte based on poly(ε‐caprolactone‐co‐trimethylene carbonate) and tetrabutylammonium bis‐oxalato borate in light‐emitting electrochemical cells (LECs) is presented. It is shown that the spin‐cast devices exhibit current efficiencies of ≈2 cd A^?1 with luminance over ≈12 000 cd m^?2, an order of magnitude higher than previous bio‐based LECs. By a combination of industrially relevant techniques (i.e., inkjet printing and blade coating), the fabrication of LEC devices on a cellulose‐based flexible biodegradable substrate showing lifetimes compatible with transient applications is demonstrated. The presented results have direct implications toward the industrial manufacturing of biomaterial‐based light‐emitting devices with potential use in future biodegradable/biocompatible electronics.     

Flexible Electronics: Stretchable Electrodes and Their Future

Flexible electronics, as an emerging and exciting research field, have brought great interest to the issue of how to make flexible electronic materials that offer both durability and high performance at strained states. With the advent of on‐body wearable and implantable electronics, as well as increasing demands for human‐friendly intelligent soft robots, enormous effort is being expended on highly flexible functional materials, especially stretchable electrodes, by both the academic and industrial communities. Among different deformation modes, stretchability is the most demanding and challenging. This review focuses on the latest advances in stretchable transparent electrodes based on a new design strategy known as kirigami (the art of paper cutting) and investigates the recent progress on novel applications, including skin‐like electronics, implantable biodegradable devices, and bioinspired soft robotics. By comparing the optoelectrical and mechanical properties of different electrode materials, some of the most important outcomes with comments on their merits and demerits are raised. Key design considerations in terms of geometries, substrates, and adhesion are also discussed, offering insights into the universal strategies for engineering stretchable electrodes regardless of the material. It is suggested that highly stretchable and biocompatible electrodes will greatly boost the development of next‐generation intelligent life‐like electronics.     

Oxide-based thin film transistors for flexible electronics

The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics.As one of the most common thin film devices,thin film transistors (TFTs) are significant building blocks for flexible platforms.Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature,high carrier mobility,and good uniformity.The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors.First,an introduction of flexible electronics and flexible oxide-based thin film transistors is given.Next,we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics,paper sheets,metal foils,and flexible thin glass.Afterwards,applications of flexible oxide-based TFTs including bendable sensors,memories,circuits,and displays are presented.Finally,we give conclusions and a prospect for possible development trends.     

Liquid Metal‐Based Transient Circuits for Flexible and Recyclable Electronics

Transient electronics, arising electronic devices with dissolvable or degradable features on demand, is still at an early stage of development due to the limited choices of materials and strategies. Herein, a facile fabrication method for transient circuits by the combination of room‐temperature liquid metals (RTLMs) as the electronic circuit and water‐soluble poly(vinyl alcohol) (PVA) as the packaging material is reported. The as‐made transient circuits exhibit remarkable durability and stable electric performance upon bending and twisting, while possessing short transience times, owing to the excellent solubility of PVA substrates and the intrinsic flexibility of RTLM patterns. Moreover, the RTLM‐based transient circuit shows an extremely high recycling efficiency, up to 96% of the employed RTLM can be recovered. As such, the economic and environmental viability of transient electronics increases substantially. To validate this concept, the surface patterning of RTLMs with complicated shapes is demonstrated, and a transient antenna is subsequently applied for passive near‐field communication tag and a transient capacitive touch sensor. The application of the RTLM‐based transient circuit for sequentially turning off an array of light‐emitting‐diode lamps is also demonstrated. The present RTLM‐based PVA‐encapsulated circuits substantially expand the scope of transient electronics toward flexible and recyclable transient systems.     

Fully transparent flexible transistors built on metal oxide nanowires

Transparent electronics has attracted great research efforts in recent years due to its potential to make significant impact in many area, such as next generation displays, ultraviolet (UV) detectors, solar cells, charge-coupled devices (CCDs), and so on. Central to the realization of transparent electronics is the development of high performance fully transparent thin-film transistors (TFTs). One-dimensional (1-D) nanostructures have been the focus of current researches due to their unique physical properties and potential applications in nanoscale elec-tronics and optoelectronics. Among 1-D nanostructures, transparent metal oxide nanowires are one of the best candidates to make fully transparent TFTs. We provide in this paper the most recent development on the fabrication of fully transparent TFT using metal oxide nanowires as the device elements. First, the review article gives a general introduction about the development of transparent elec-tronics using different kinds of materials as the devices elements, including organic semiconductors, metal oxide thin films, and metal oxide nanowires. Second, the growth of metal oxide nanowires using vapor phase methods governed by two different growth mechanisms: vapor-solid mechanism and vapor-liquid-solid mechanism, respectively, are described. Third, the fabrication of transparent and flexible TFTs using different metal oxides nanowires is comprehensively described. In conclusion, the challenges and prospects for the future are discussed.     

Liquid Metal Based Island‐Bridge Architectures for All Printed Stretchable Electrochemical Devices

The adoption of epidermal electronics into everyday life requires new design and fabrication paradigms, transitioning away from traditional rigid, bulky electronics towards soft devices that adapt with high intimacy to the human body. Here, a new strategy is reported for fabricating achieving highly stretchable “island‐bridge” (IB) electrochemical devices based on thick‐film printing process involving merging the deterministic IB architecture with stress‐enduring composite silver (Ag) inks based on eutectic gallium‐indium particles (EGaInPs) as dynamic electrical anchors within the inside the percolated network. The fabrication of free‐standing soft Ag‐EGaInPs‐based serpentine “bridges” enables the printed microstructures to maintain mechanical and electrical properties under an extreme (≈800%) strain. Coupling these highly stretchable “bridges” with rigid multifunctional “island” electrodes allows the realization of electrochemical devices that can sustain high mechanical deformation while displaying an extremely attractive and stable electrochemical performance. The advantages and practical utility of the new printed Ag‐liquid metal‐based island‐bridge designs are discussed and illustrated using a wearable biofuel cell. Such new scalable and tunable fabrication strategy will allow to incorporate a wide range of materials into a single device towards a wide range of applications in wearable electronics.     

Transparent Photo‐Stable Complementary Inverter with an Organic/Inorganic Nanohybrid Dielectric Layer

Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide‐based thin‐film transistors (TFTs) on glass and plastic substrates. However, work in transparent electronics has been limited mostly to high‐voltage devices operating at more than a few tens of volts, and has mainly focused on transparent display drivers. Low‐voltage logic devices, such as transparent complementary inverters, operating in an electrically stable and photo‐stable manner, are now very necessary to practically realize transparent electronics. Electrically stable dielectrics with high strength and high capacitance must also be proposed to support this mission, and simultaneously these dielectrics must be compatible with both n‐ and p‐channel TFTs in device fabrication. Here, a nanohybrid dielectric layer that is composed of multiple units of inorganic oxide and organic self‐assembled monolayer is proposel to support a transparent complementary TFT inverter operating at 3 V.     

A Dynamically Hybrid Crosslinked Elastomer for Room-Temperature Recyclable Flexible Electronic Devices

The rapid development of flexible electronics has resulted in serious pollution in the form of electronic waste. Accordingly, recyclability is highly desirable for these devices, but this remains a significant challenge. A dynamically hybrid crosslinked polyurethane (FPU) elastomer is designed in this study to address this challenge. Distinctive Diels–Alder adducts with suitable dissociation and reassociation dynamics are designed as crosslinking units to provide an efficient time frame for recycling. FPU is maintained in a state with a low crosslinking density after heating at 120 °C for 5 min. FPU-based electronics can therefore be dissolved in chloroform under ambient conditions to separate the electronic components and polymers for the refabrication of new electronic devices. This is the first reported thermoset elastomer that can be completely recycled at room temperature without chemical treatment to decompose the polymer chain. The design concept is applied by demonstrating the fabrication by recycling of different FPU-based flexible electronic devices: position sensor, flexible keyboard, and motion sensor. Furthermore, the FPU has many advantages as a material for flexible electronics in terms of its biomimetic mechanical properties, room-temperature self-healing, and facile processability. This study provides promising new design principles to develop materials for promoting sustainable flexible electronics.     

Room‐Temperature Printing of Organic Thin‐Film Transistors with π‐Junction Gold Nanoparticles

Printing semiconductor devices under ambient atmospheric conditions is a promising method for the large‐area, low‐cost fabrication of flexible electronic products. However, processes conducted at temperatures greater than 150 °C are typically used for printed electronics, which prevents the use of common flexible substrates because of the distortion caused by heat. The present report describes a method for the room‐temperature printing of electronics, which allows thin‐film electronic devices to be printed at room temperature without the application of heat. The development of π‐junction gold nanoparticles as the electrode material permits the room‐temperature deposition of a conductive metal layer. Room‐temperature patterning methods are also developed for the Au ink electrodes and an active organic semiconductor layer, which enables the fabrication of organic thin‐film transistors through room‐temperature printing. The transistor devices printed at room temperature exhibit average field‐effect mobilities of 7.9 and 2.5 cm² V^?1 s^?1 on plastic and paper substrates, respectively. These results suggest that this fabrication method is very promising as a core technology for low‐cost and high‐performance printed electronics.     

Printable Organic‐Inorganic Nanoscale Multilayer Gate Dielectrics for Thin‐Film Transistors Enabled by a Polymeric Organic Interlayer

Here, a new approach to the layer‐by‐layer solution‐processed fabrication of organic/inorganic hybrid self‐assembled nanodielectrics (SANDs) is reported and it is demonstrated that these ultrathin gate dielectric films can be printed. The organic SAND component, named P‐PAE, consists of polarizable π‐electron phosphonic acid‐based units bound to a polymeric backbone. Thus, the new polymeric SAND (PSAND) can be fabricated either by spin‐coating or blade‐coating in air, by alternating P‐PAE, a capping reagent layer, and an ultrathin ZrOx layer. The new PSANDs thickness vary from 6 to 15 nm depending on the number of organic‐ZrOx bilayers, exhibit tunable film thickness, well‐defined nanostructures, large electrical capacitance (up to 558 nF cm^?2), and good insulating properties (leakage current densities as low as 10^?6 A cm^?2). Organic thin‐film transistors that are fabricated with representative p‐/n‐type organic molecular/polymeric semiconducting materials, function well at low voltages (<3.0 V). Furthermore, flexible TFTs fabricated with PSAND exhibit excellent mechanical flexibility and good stress stability, offering a promising route to low operating voltage flexible electronics. Finally, printable PSANDs are also demonstrated and afford TFTs with electrical properties comparable to those achieved with the spin‐coated PSAND‐based devices.     

Edible Electronics: Biocompatible and Biodegradable Materials for Organic Field‐Effect Transistors (Adv. Funct. Mater. 23/2010)

Biocompatible‐ingestible electronic circuits and capsules for medical diagnosis and monitoring are currently based on traditional silicon technology. Organic electronics has huge potential for developing biodegradable, biocompatible, bioresorbable, or even metabolizable products. An ideal pathway for such electronic devices involves fabrication with materials from nature, or materials found in common commodity products. Transistors with an operational voltage as low as 4–5 V, a source drain current of up to 0.5 μA and an on‐off ratio of 3–5 orders of magnitude have been fabricated with such materials. This work comprises steps towards environmentally safe devices in low‐cost, large volume, disposable or throwaway electronic applications, such as in food packaging, plastic bags, and disposable dishware. In addition, there is significant potential to use such electronic items in biomedical implants.     

Exploiting In Situ Redox and Diffusion of Molybdenum to Enable Thin‐Film Circuitry for Low‐Cost Wireless Energy Harvesting

Direct additive fabrication of thin‐film electronics using a high‐mobility, wide‐bandgap amorphous oxide semiconductor (AOS) can pave the way for integration of efficient power circuits with digital electronics. For power rectifiers, vertical thin‐film diodes (V‐TFDs) offer superior efficiency and higher frequency operation compared to lateral thin‐film transistors (TFTs). However, the AOS V‐TFDs reported so far require additional fabrication steps and generally suffer from low voltage handling capability. Here, these challenges are overcome by exploiting in situ reactions of molybdenum (Mo) during the solution‐process deposition of amorphous zinc tin oxide film. The oxidation of Mo forms the rectifying contact of the V‐TFD, while the simultaneous diffusion of Mo increases the diode's voltage range of operation. The resulting V‐TFDs are demonstrated in a full‐wave rectifier for wireless energy harvesting from a commercial radio‐frequency identification reader. Finally, by using the same Mo film for V‐TFD rectifying contacts and TFT gate electrodes, this process allows simultaneous fabrication of both devices without any additional steps. The integration of TFTs alongside V‐TFDs opens a new fabrication route for future low‐cost and large‐area thin‐film circuitry with embedded power management.     

Highly Sensitive Non‐Classical Strain Gauge Using Organic Heptazole Thin‐Film Transistor Circuit on a Flexible Substrate

A non‐classical organic strain gauge as a voltage signal sensor is reported, using an inverter‐type thin‐film transistor (TFT) circuit, which is able to sensitively measure a large quantity of elastic strain (up to ≈2.48%), which approaches an almost folding state. Novel heptazole‐based organic TFTs are chosen to be incorporated in this gauge circuit; organic solid heptazole has small domain size in general. While large crystal domain‐pentacene TFTs seldom show sufficient current variation upon mechanical bending for tensile strain, these heptazole TFTs demonstrate a significant variation for the same strain condition as applied to pentacene devices. In addition, the pentacene channel does not recover to its original electric state after bending but heptazole channels are very elastic and reversible, even after going through serious bending. More interesting is that the heptazole TFTs show only a little variation of signal current under horizontal direction strain, while they make a significant amount of current decrease under vertical direction strain. Utilizing the anisotropic response to the tensile bending strain, an ultrasensitive voltage output strain gauge composed of a horizontally and vertically oriented TFT couple is demonstrated.     

Size‐Scalable and High‐Density Liquid‐Metal‐Based Soft Electronic Passive Components and Circuits Using Soft Lithography

The use of conducting liquids with high electrical conductivity, such as eutectic gallium–indium (EGaIn), has great potential in electronics applications requiring stretchability and deformability beyond conventional flexible electronics relying on solid conductors. An advanced liquid metal thin‐line patterning process based on soft lithography and a compatible vertical integration technique are presented that enable size‐scalable and high‐density EGaIn‐based, soft microelectronic components and circuits. The advanced liquid metal thin‐line patterning process based on poly(dimethylsiloxane) (PDMS) substrates and soft lithography techniques allows for simultaneous patterning of uniform and residue‐free EGaIn lines with line width from single micrometers to several millimeters at room temperature and under ambient pressure. Using this fabrication technique, passive electronic components and circuits are investigated under elastic deformations using numerical and experimental approaches. In addition, soft through‐PDMS vias with high aspect ratio are demonstrated for multilayer interconnections in 2.5D and 3D integration approaches. To highlight the system‐level potential of the patterning technique, a chemical sensor based on an integrated LC resonance circuit with a microfluidic‐tunable interdigitated capacitor and a planar spiral inductor is fabricated and characterized. Finally, to show the flexibility and stretchability of the resulting electronics, circuits with embedded light emitting diodes (LEDs) are investigated under bending, twisting, and stretching deformations.     

Thermally Stable,Biocompatible, and Flexible Organic Field‐Effect Transistors and Their Application in Temperature Sensing Arrays for Artificial Skin

Application of degradable organic electronics based on biomaterials, such as polylactic‐co‐glycolic acid and polylactide (PLA), is severely limited by their low thermal stability. Here, a highly thermally stable organic transistor is demonstrated by applying a three‐arm stereocomplex PLA (tascPLA) as dielectric and substrate materials. The resulting flexible transistors are stable up to 200 °C, while devices based on traditional PLA are damaged at 100 °C. Furthermore, charge‐ trapping effect induced by polar groups of the dielectric is also utilized to significantly enhance the temperature sensitivity of the electronic devices. Skin‐like temperature sensor array is successfully demonstrated based on such transistors, which also exhibited good biocompatibility in cytotoxicity measurement. By presenting combined advantages of transparency, flexibility, thermal stability, temperature sensitivity, degradability, and biocompatibility, these organic transistors thus possess a broad applicability such as environment friendly electronics, implantable medical devices, and artificial skin.     

Biocompatible and Flexible Chitosan‐Based Resistive Switching Memory with Magnesium Electrodes

A flexible and transparent resistive switching memory based on a natural organic polymer for future flexible electronics is reported. The device has a coplanar structure of Mg/Ag‐doped chitosan/Mg on plastic substrate, which shows promising nonvolatile memory characteristics for flexible memory applications. It can be easily fabricated using solution processes on flexible substrates at room temperature and indicates reliable memory operations. The elucidated origin of the bipolar resistive switching behavior is attributed to trap‐related space‐charge‐limited conduction in high resistance state and filamentary conduction in low resistance state. The fabricated devices exhibit memory characteristics such as low power operation and long data retention. The proposed biocompatible memory device with transient electrodes is based on naturally abundant materials and is a promising candidate for low‐cost memory applications. Devices with natural substrates such as chitosan and rice paper are also fabricated for fully biodegradable resistive switching memory. This work provides an important step toward developing a flexible resistive switching memory with natural polymer films for application in flexible and biodegradable nanoelectronic devices.     

Biocompatible and Biodegradable Materials for Organic Field‐Effect Transistors

Biocompatible‐ingestible electronic circuits and capsules for medical diagnosis and monitoring are currently based on traditional silicon technology. Organic electronics has huge potential for developing biodegradable, biocompatible, bioresorbable, or even metabolizable products. An ideal pathway for such electronic devices involves fabrication with materials from nature, or materials found in common commodity products. Transistors with an operational voltage as low as 4–5 V, a source drain current of up to 0.5 μA and an on‐off ratio of 3–5 orders of magnitude have been fabricated with such materials. This work comprises steps towards environmentally safe devices in low‐cost, large volume, disposable or throwaway electronic applications, such as in food packaging, plastic bags, and disposable dishware. In addition, there is significant potential to use such electronic items in biomedical implants.