主从JK触发器时序分析的简单方法

主从JK触发器存在一次变化问题,即在CP信号为1期间,无论J、K信号如何变化,主触发器只发生一次变化。只有定出主触发器这一次变化变成什么状态,才能得出从触发器在CP下降到了之后翻成的状态。按以往的授课方法,我们往往通过先分析主从JK触发器的电路结构,分析出一次变化的结果,然后再推出CP的下降沿到来时从触发器的次态。这样分析显得繁琐。本人通过仔细推敲,觉得将JK触发器的功能表(表1)改为表2所表示的逻辑关系,即将表1中“0”改为“恒0”,表1中“1”改为“有1”,则可利用JK触发器功能表来分析触发器的状态转换情况。这对分析JK触发器时序关系带来了极大的方便,在教学过程中也收到很好的效果。     

CMOS数字集成电路原理与应用（五）

(五)触发器触发器有两个稳定的工作状态,有一个或两个输入端和两个互补输出端。当在输入端加入不同的触发信号时,就使输出状态发生翻转,所以称为触发器。当取消触发信号时,触发器保持其输出状态不变,直到接入另一种输入时输出时才发生改变,触发器可用来组成计数器、寄存器和存储器。按其功能,触发器可分为R—S触发器、D触发器、J—K触发器、单稳态     

对基于模代数的三值触发器的研究

本文用模代数讨论三值触发器。提出了基于模代数的三值 JK 触发器。与基于 Post代数的三值 JK 触发器相比,它的逻辑功能是均衡的,它能像二值 JK 触发器一样方便地构成另外二种常用的触发器:三值 D 型触发器与三值 T 型触发器。此外,由时序电路的设计实例,也证实了因它的功能较强而能导致较简单的激励函数与组合电路。     

自动机理论及应用 自动机理论及应用——多状态时序电路设计的新方法

目前设计时序电路大都是根据要求,选用一定类型的触发器,列出各触发器的真值表和激励表,再由状态转换求出驱动方程,利用卡诺图进行化简,写出简化逻辑式,最后画出逻辑图。这种方法对于解决较少变量的设计是行之有效的,但对多变量、多状态问题的设     

用D图变换法分析时序逻辑电路

一、引言一般时序逻辑电路的分析方法是利用触发器的激励方程,通过其特征方程式推导出电路的状志方程和电路的输出方程,然后再排出状态转移表和状态转换图[1][2]。总而言之,一般的分祈方法是代数方法。本文提出的D图变换分析法,作者认为可称之为时序电路(主要指同步电路)的图形分析法。     

源-射耦合触发器

由场效应管与晶体管构成的源-射耦合触发器,其触发电流远小于1μA。本文对该种触发器进行了分析,给出了求取触发电平的计算公式,指出了有可能获得零温度系数触发电平的触发器。当某种条件得到满足时,该触发器还具有记忆特性,从而可借以构成一种不可逆的触发电路。理论分析与实验结果基本相符。     

同步时序电路的增广Petri网分析

本文应用带抑制弧的增广Petri网建立了基本门电路和常用触发器的Petri网模型;并运用该模型描述了同步时序电路;提出了增广Petri网的授权矩阵、状态转移方程和触发器次态与变迁授权条件的关系。在此基础上可对同步时序电路描述和分析,并用实例证明了该方法的有效性。     

基本RS触发器工作状态的Multisim仿真

给出了具有置0、置1功能及不确定输出状态的基本RS触发器的Multisim仿真方法,即用字组产生器产生所需的各类输入信号,用四踪示波器同步显示输入信号及状态输出信号的波形,可直观描述触发器的置O、置1过程及不确定状态的产生过程。分析了基本RS触发器不确定状态的输出逻辑表达式及Muhisim仿真方案。所述方法的创新点是解...     

康明斯柴油机启动回路的故障处理

柴油机发电机组作为交流后备电源具有非常重要的作用。虽然康明斯柴油机的故障率相对较低，但其启动回路的电气部分较易发生故障。笔者现将在日常维护中遇到的此类故障的处理方法做一归纳总结。康明斯柴油机的启动回路示意如图１所示：当机组启动时，由引擎界面板A３１的J４（２）经电压调整器板A３７的J７（５）和J７（６）脚送出一个B＋（２４V）启动信号到K４的１端，K４继电器动作，使K４（３－４）闭合，B＋通过２０A熔丝被加到电机磁吸开关绕组１端，使磁吸开关动作，从而（３－４）闭合，电池电压B＋经（３－４）点加电给启动…     

基于74LS112JK触发器的抢答器设计

根据JK触发器在每个时钟脉冲作用时间内，其状态只变化一次，而且不同引脚都可以使触发器状态发生改变的特性，给出了用JK触发器来设计抢答器的设计方法及仿真，同时给出了用74LS112JK触发器设计抢答器的最优设计方法及思路。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.