“2007电信运营支撑系统发展论坛暨征文颁奖活动”圆满成功

全球化竞争的电信市场和电信多元化价值链的形成促进了OSS（运营支撑系统）技术的飞速发展，电信OSS在电信集约化经营的实践中扮演着越来越重要的角色。合理使用OSS技术，建设功能完善、互通灵活、充分共享信息的OSS，是我国每个电信运营商目前极为关注并重点发展的运营管理战略之一。     

“新纪网”运营支撑的实现与展望

电信运营支持系统(OSS,Operational Support Systems)是支持电信运营商运营管理电信网络的系统平台。本文分析了作为下一代网络(NGN)的运营支撑系统与传统网络运营支撑系统的区别,然后讨论了在四川联通软交换商用试验网——“新纪网”中运营支撑系统相关系统的实现,并探讨了“新纪网”运营支撑系统的下一步建设问题及展望。     

以分布式SOA基础架构打造新一代OSS

目前OSS的问题和趋势随着电信业的发展、电信网络技术的进步,以及电信产品和服务的日新月异,电信运营支撑系统(OSS)的范畴也从最初对电信网络和电信资源的管理,延伸到对电信业务、电信资费、电信营销的管理,涵盖了客户管理和服务的过程,形成了电信运营商综合的电信业务运营和管理平台。     

电信运营商业务支撑系统（BSS）需求规范浅析

BSS是业务支撑系统（Business Support System）的缩写，与OSS运营支撑系统（Operation Support System）一起统称为BOSS系统，是电信运营商从原有的以“业务为中心”经营模式向以“客户为中心”经营模式转变的重要标志。从全球范围来看，在电信垄断打破之后，运营商认识到了市场竞争的焦点不在于网络基础设施和资源，而在于电信业务的运营和运行，除了不断推出新业务满足客户需求、保持客户群的忠诚度之外，还必须保证经营利润。     

虚拟化技术在电信网络管理系统中的应用

随着中国加入WTO后电信行业体制改革不断深化,电信行业面临越来越激烈的竞争。OSS的概念逐步扩大,与BSS和MSS的有机组合形成了新一代的网络管理系统,通过统一的信息总线有机整合在一起。它不仅能在帮助运营商制定符合自身特点的运营支撑系统的同时帮助确定系统的发展方向,还能帮助用户制定系统的整合标准,改善和提高用户的服务水平。     

电信运营支撑系统的现状分析与发展规划

本文首先回顾了电信运营支撑系统(OSS)的概念,指出OSS建设和规划的重要性及规律,并深入分析OSS的现状和问题,以及网络新技术给OSS带来的影响,提出OSS发展的总目标和演进原则,并指出在目前环境下进行OSS研究和建设的有效切入点.     

第三代移动通信运营支撑系统的几点探讨

在目前以客户竞争，服务竞争、品牌竞争等全方位竞争模式的电信环境下,运营商的经营模式已开始向“以客户为中心，以市场为导向”的目标转变。运营支撑系统在提高企业竞争力,占有市场及客户方面,运营支撑系统发挥着重要的作用。不仅提升了电信运营企业的客户服务水平,也提高了生产的自动化水平,增强了业务处理能力，提高了生产效率。所以，运营支撑系统已经成为电信运营管理不可缺少的组成部分。运营支撑系统是指借助IT手段实现对电信网络和电信业务的管理,以达到支撑运营和改善运营的目标。一般而言运营支撑系统包括两部分的内容：一部分是BSS(Business Support System)即业务支撑系统；另一部分是狭义的运营支撑系统OSS(Operation Support System),主要指电信网络的管理维护支撑系统。随着3G技术和相关业务的成熟,3G商用也正轰轰烈烈地加入了国内电信运营商的未来业务开展的日程表。3G业务的成功开展,除了网络建设、终端支持等重要因素外,支撑系统也起着关键作用。第三代移动通信的发展给支撑系统也提出了新的要求。     

新一代运营支撑系统解决方案

国内运营支撑系统(OSS／BSS)的建设已经有多年的历史了．业界公认的最早的大型OSS系统可以追溯到1995年原电信总局推动的“九七工程”．即市话业务计算机管理系统。随后本地网交换网管系统、本地计费帐务系统、传输网管系统、客服系统、资源管理系统、BOSS系统等陆续出现。早期的OSS系统是在特定的运营环境下．面向特定的业务问题和管理问题而规划、建设和实施的．但随着网络的演变、业务的发展和运营环境的变迁．OSS系统也受到了前所未有的挑战。     

NGOSS时代的OSS产品策略W

1引言需求和技术的发展、经营模式的改变,使得电信业务提供商和网络运营商经历着前所未有的挑战,这种挑战蔓延到电信业整个价值链,作为电信业价值链重要组成部分的电信支持软件开发商和集成商也不可避免地面对由此产生的挑战。新形势下,电信运营商对OSS(电信运营支持系统)有了不同以往的新的高标准要求,对OSS的建设有了新的策略。电信支持软件的开发商应当研究OSS发展的动向,掌握电信运营商的根本需求,调整自己的产品策略和研发方向,迎接新的机会和挑战。2需求的发展电信企业的运营系统和网络系统构成向客户提供电信业务或服务的两个基…     

IBMp系列服务器在mBOSS中的应用

一、mBOSS简介 mBOSS（mService Business＆0peration Support System）是伴随数据交换产品出现的新一代OSS系统，是融合业务环境下的电信运营支撑系统，能够提供多业务环境下的开通管理、计费管理、客户服务等功能，并结合OSX平台提供的核心网整合能力，是为电信运营商准备的下一代智能业务增强的新型OSS系统。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.