共查询到19条相似文献,搜索用时 125 毫秒
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蓝宝石衬底分步清洗及其对后续氮化的影响 总被引:1,自引:0,他引:1
通过反射高能电子衍射仪(RHEED)分析蓝宝石衬底在经过双热电偶校温的ECR-PEMOCVD装置中清洗氮化实验表面晶质的RHEED图像,研究了常规清洗和ECR等离子体所产生的活性氢氮等离子体源对蓝宝石衬底清洗、氮化的实验.结果表明,经常规清洗后的蓝宝石衬底表面晶质差异较大,有些衬底再经通常的30min等离子体清洗是达不到要求的,而要根据情况施行分步清洗才能清洗充分,清洗充分的衬底经20min就可氮化出来,不充分的再长的时间也很难氮化. 相似文献
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研究了用MOCVD法在蓝宝石(Al2O3)(0001)和(1120)衬底上制备ZnO薄膜时的生长特性.详细研究了采用Al2O3(0001)衬底时生长温度与压力的影响.由于存在比较大的晶格失配,一般容易得到ZnO纳米结晶,不容易获得既平坦且质量又好的ZnO薄膜.生长温度对薄膜-衬底界面的生长模式有很大的影响;而生长压力对ZnO纳米结晶的形状有决定性作用.通过适当控制生长温度及压力,可以得到ZnO薄膜或不同形状的纳米结构.当采用Al2O3(1120)衬底时,由于晶格失配较小,能保持平坦层状生长,临界膜厚远远大于采用Al2O3(0001)衬底的结果.在Al2O3(1120)衬底上制作了ZnO/MgZnO量子阱并研究了其光学特性.观察到了量子化能级间以及在载流子间的跃迁引起的发光.由压电效应引起的内建电场约为3×105V/cm.同时发现采用低温低压生长可以增大ZnO中受主杂质浓度,有利于获得p型ZnO. 相似文献
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基于热力学平衡理论,对在电子回旋共振等离子体增强金属有机化学气相沉积系统中的GaN薄膜生长给出了一个化学平衡模型.计算表明,GaN生长的驱动力Δp是以下生长条件的函数:Ⅲ族输入分压,输入Ⅴ/Ⅲ比,生长温度.计算了六方和立方GaN的生长相图,计算结果和我们的实验结果显示出一定的一致性.通过分析,解释了高温和高Ⅴ/Ⅲ比生长条件适合六方GaN的原因.上述模型可以延伸到用于GaN单晶薄膜生长的类似系统中. 相似文献
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A low temperature growth method based on an electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) was proposed for the growth of GaN (Gallium nitride) films on ordinary amorphous soda-lime glass substrates. To alleviate the large lattice mismatch between GaN film and glass substrate and improve the heat dissipation performance for potential optoelctrical device application, five intermediate layers (Cu, Ni, Ti, Ag, and ITO) were deposited on the glass substrate before the growth of GaN. A comparative study was performed through structural analysis of the as-grown GaN films with various intermediate layers investigated by means of in-situ reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), and atomic force microscopy (AFM). The results indicate that the Ti intermediate layer has a great advantage over other intermediate layers in view of crystalline quality and smooth surface, therefore is more suitable and preferred for the potential application in optoelectronic devices. 相似文献
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采用电子回旋共振-等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)技术,在康宁7101型普通玻璃衬底上沉积了高度c轴择优取向的多晶GaN薄膜. 利用反射高能电子衍射(RHEED) , X射线衍射 (XRD) 对样品进行检测,研究了在低温(430℃)沉积中氮气流量对GaN薄膜结晶性的影响. 并且利用原子力显微镜 (AFM) 和室温光致发光 (PL) 谱研究了薄膜的表面形貌和发光特性,发现薄膜表面形貌较为平整,其发光峰由较强的紫外近带边发光峰和极其微弱的绿光发光峰组成. 相似文献
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Sn whisker/hillock growth is a result of the release of compressive stress in a Sn thin film. Filamentary Sn whiskers were
formed on an electrodeposited Sn thin film aged at room temperature, while Sn hillocks were formed as the aging temperature
was raised to 80°C and 150°C. By mechanically applying a tensile stress on the Sn thin film, the growth of the Sn whisker/hillock
was significantly mitigated. This mitigation growth suggests that part of the compressive stress in the Sn thin film was neutralized
by the mechanically applied tensile stress. 相似文献
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利用射频等离子体辅助分子束外延技术,在LSAT(111)衬底上制备高质量ZnO单晶薄膜.研究了衬底表面预处理及生长温度对ZnO外延膜的生长过程、外延取向关系以及表面形貌的影响.发现在较低温度下生长ZnO时,薄膜中容易形成30. 旋转畴,而在较高温度下,可完全消除薄膜中的旋转畴,得到具有单一畴的ZnO单晶薄膜,讨论了旋转畴的起源以及生长温度对于消除旋转畴的作用.锐利的3×3 RHEED图像验证了ZnO薄膜具有O极性 相似文献
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Hui-dong Yang 《光电子快报》2005,1(1):21-23
With in situ optical emission spectroscopy (OES) diagnosis on VHF-generated H2+SiH4 plasmas, and with the measurements of deposition rate and structure of μc-Si: H thin films fabricated with VHF-PECVD technique
at different substracte temperature, influence of substrate temperature on the deposition of μc-Si: H thin film and on its
structural properties have been investigated. The results show that with the increase of substrate temperature, the crystalline
volume fraction Xc and average grain size d are enhanced monotonously, but the deposition rate increases firstly and then
decreases. The optimized substrate temperature for (μc-Si: H thin films deposition under our current growth system is about
210 °C, at which deposition rate 0.8 nm/s of μc-Si: H thin film with Xc?60% and d?9 nm can be obtained. 相似文献
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A calculation of film surface temperature during thin films growth by sputtering technique is proposed. The calculation procedure is based on the conversion into heat of the total flux energy of species impinging the film surface during growth. The results indicate that the film''s surface temperature depends drastically on material substrate thermal conductivity and thickness on one hand, and the plasma conditions namely the discharge power on the other. The predicted film surface temperatures were used to explain the microstructure evolution of hydrogenated amorphous silicon (a-Si:H) thin films deposited by reactive radio frequency (RF) sputtering on different substrates. 相似文献