一种改进的TOA/AOA混合定位算法

在蜂窝网络中利用电波到达时间（TOA）对移动台（MS）进行定位估计时，也可利用服务基站（BS）提供较准确电波到达角（AOA）信息，以提高定位性能。为此，本文对Chan提出的电波到达时间差（TDOA）定位算法进行了改进，提出了一种既继承原算法的优点，又增加AOA测量值以提高定位性能的TOA/AOA混合定位算法，分析和仿真结果表明，只要AOA测量值达到一定精度，该算法就能取得比单纯TOA定位法更好的性能。     

一种基于TDOA的三基站移动通信定位算法

通过建立到达时间差（TDOA）定位模型，并运用牛顿迭代法对模型进行求解，给出了一种基于TDOA的三基站移动通信定位算法。该算法不需要新建坐标系来确定三基站的经纬高坐标，即可对移动终端进行三维定位。方针结果表明，该算法定位精度较高，可以满足应用需求。     

无线电定位技术在蜂窝通信系统中的应用及实现

当前，移动用户对基于无线定位技术的新业务的需求不断增加，推动了对无线测距及定位技术的深入研究，向用户提供精确的定位信息已经成为新一代PCS系统的标准业务之一。本文主要介绍几种基于现有蜂窝通信系统的无线定位技术的实现原理，所要解决的主要问题和应用前景。     

基于数据融合的蜂窝无线定位算法研究

本文从数理统计角度,利用TOA和TDOA测量数据并结合扇区信息进行数据融合,然后通过定义可信度函数构造了一种基于移动台位置的动态定位算法,从而实现蜂窝网络定位。最后仿真结果表明这种融合算法在保证决策可靠的前提下,有效提高了决策输出的定位精度。     

一种TDOA/AOA混合定位算法及其性能分析

在蜂窝移动通信系统中，智能天线阵列的应用使得服务基站（BS）能提供较准确的移动台（MS）电波到达角（AOA）测量值，从而可以用于对移动台的定位估计，文中对文献[1]的电波到达时间差（TDOA）定位算法进行了改进，提出了一种既能继承原算法的优良性能，又可充分利用AOA测量值信息提高定位性能的TDOA/AOA混合定位算法，该算法还具有解析表达式解。仿真结果表明，只要AOA测量值达到一定精度，该算法就能取得比文献[1]的单纯TDOA定位算法更好的性能。     

基于时间差和角度的数据融合定位算法研究

定位系统中大部分现在存在的算法通常没有考虑综合利用空域、时域信息,而只选择了少量的测量信息.为了克服这个缺陷,提出了一种新的TDOA/AOA数据融合定位算法,这种算法充分利用了来自多个传感器的冗长信息,其中包括到达时间、到达方向.仿真实验结果表明与传统的算法相比,这种算法具有更好的定位精度和收敛速度,进一步改进了系统的可靠性,是一种有效、可行的定位算法.     

一种非视距环境下的椭圆-双曲线混合被动定位技术

在WCDMA网络环境下,提出一种基于单定位台的新型被动式定位技术—椭圆-双曲线混合定位,它利用信号到达时间和(TSOA)与到达时间差(TDOA)完成对目标的定位。在非视距(NLOS)环境下,利用Chan算法估计的目标位置作为迭代初始值,再通过Taylor级数展开法求解定位方程组。仿真结果表明,在NLOS下,该算法性能明显优于Chan算法,近似于采用真实目标位置的Taylor级数展开算法的性能,有较高的实用价值。     

多基站无源定位技术在区域定位网络中的应用

多站时差定位是一种较精确的定位方法，它通过处理三个或三个以上测量站采集的信号到达时间来对辐射源定位。文中论述了多站时差无源定位的基本原理，提出了以TDOA多基站小区无源定位系统为基础构建区域定位网络的方案。论述了时差双基无源定位的基本原理，以及小区定位系统的几何布站，地面观测站对空中平台的实时精确定位算法，同步技术，区域组网与越区切换等主要问题的实现方案。     

一种天线阵列定位法及其仿真研究

为了克服CDMA移动台(MS)定位估计中面临的远近效应问题,该文提出了一种在服务基站(BS)附近布置一种天线阵列,采用TSOA/AOA混合定位技术对MS进行定位估计的方法,分析了采用不同定位法的GDOP分布, 并给出了相应的TSOA/AOA混合定位算法。不同条件下的仿真结果表明,只要AOA测量值达到一定精度,采用这种方法就能对MS进行准确定位。     

两种NLOS误差消除及TOA定位算法

在蜂窝网络定位中,由于NLOS环境造成的附加时延(NLOS误差)是导致定位精度下降的主要原因,本文将NLOS误差与系统测量误差合成的噪声分为均值部分和随机部分,利用卡尔曼滤波算法输出与噪声方差无关的特性,无需得到全部噪声方差的准确值,只利用系统测量噪声的方差,用卡尔曼滤波算法除随机部分,再根据噪声均值部分与移动台到基站距离的关系,提出了一种简单的最小二乘(LS)定位算法,或利用最优化方法进行定位;利用仿真实验得到滤波距离--误差先验信息,基于先验信息提出了第二种NLOS误差消除算法,再利用所提的最小二乘定位算法进行定位.仿真结果表明,本文提出的算法能够有效消除NLOS误差带来的影响,具有更高的定位精度与稳健性.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.