CDMA系统中半盲恒模算法的性能分析

本文对应用于CDMA上行链路多用户检测中半盲恒模算法的收敛性能、SIR性能和复杂度进行了深入研究。我们在无噪环境下分析了半盲恒模算法全局收敛的条件;通过算法SIR性能的分析,可知半盲算法可以获得更加优良的抵消MAI的能力;通过半盲恒模算法、盲恒模算法、解相关算法的复杂度比较,可知半盲恒模算法以略高于解相关算法复杂度的代价获得优于解相关算法和恒模算法的SIR性能和BER性能。     

CDMA中的半盲恒模算法

该文研究了应用于CDMA上行链路多用户检测中的半盲恒模算法。它首先利用非盲算法消除所有小区内干扰用户的影响,接着再利用盲算法抵消剩余的干扰。通过仿真实验,将之与盲恒模算法及解相关算法相比较,可以看出在于扰用户增多时,本文提出的半盲恒模算法的性能明显优于另外两种算法。     

块衰落信道下训练序列辅助的恒模多用户检测器研究

恒模算法(CMA)是一种广泛应用于阵列处理、均衡、多用户检测中的盲算法.最小二乘恒模算法(LSCMA)由于其全局收敛性及稳定性受到关注.本文研究块衰落信道下基于训练序列辅助的LSCM算法的性能.本文的研究基于同步CDMA系统,系统中每个用户经历独立的平坦瑞利衰落信道.在发送端,为了在接收端获得数据的信号子空间,目标用户的第一帧中插入少量的训练序列.通过信号子空间信息的辅助,本文提出的训练序列非周期辅助最小二乘恒模(TSA-LSCM-NP,Training Soquence Aided Least Squares Constant Modulus non-periodically)算法在提高少许复杂度的基础上能够获得优于LSCM算法的检测性能.     

一种预处理的MIMO MC-CDMA恒模多用户盲检测

该文提出一种下行MIMO MC-CDMA系统的半盲多用户恒模接收系统,在恒模检测前对接收信号进行预处理,把MIMO接收系统转化成多个SISO(单发单收)接收系统,用SISO的恒模算法检测信号,减少了多用户多径干扰的影响,明显提高了接收系统的检测性能。     

基于子空间的线性约束最小二乘恒模算法

线性约束最小二乘恒模算法能够有效克服恒模算法中存在的干扰捕获问题,然而,在实际的系统中,由于受到来自噪声子空间分量的影响,从而导致性能下降。针对这一问题,该文提出了一种基于子空间方法的线性约束最小二乘恒模(SLSCM)多用户检测算法并对其性能进行了理论分析。该算法收敛速度快,信道跟踪能力强,有较好的输出信干噪比和误码率性能。理论分析和仿真实验验证了该文算法的有效性和优越性。     

一种盲自适应空时多用户检测技术

空时多用户检测技术是一种有效消除CDMA系统中多址干扰和码间干扰的方法。目前很多此类方法都需要知道一些系统参数,其自适应实现需要训练序列。提出了一种结合恒模算法(CMA)和解扩重扩算法(DRA)的盲自适应空时恒模解扩重扩算法(STCMDRA),他能够有效利用信号的恒模特性以及用户已知的扩频信号信息来较好地抑制多址干扰及码间干扰。仿真结果进一步验证了该方法的性能。     

脉冲噪声环境下的恒模盲均衡算法

α稳定分布噪声导致现有的基于梯度下降法的恒模盲均衡算法(SGD-CMA)失效.通过分析厚拖尾噪声对现有算法的影响,给出了2种改造算法,即韧性梯度下降恒模盲均衡算法(SGD-RCMA)和递归最小二乘恒模盲均衡算法(RLS-RCMA).仿真表明2种改造算法比传统的恒模盲均衡算法具有更好的适用性,不仅适用于高斯噪声环境而且适合于脉冲噪声环境.同时RLS-RCMA与SGD-RCMA相比具有更快的收敛速度和更好的码间干扰抑制能力.     

一种分数低阶统计量广义恒模盲多用户检测算法

针对实际盲多用户检测系统中存在的大量噪声呈现非高斯性,而这种非高斯性使基于高斯噪声假定下的恒模盲多用户检测算法的性能显著退化甚至不能正常工作,本文提出了一种分数低阶统计量的广义恒模盲多用户检测算法.该算法是分数低阶统计量恒模算法的推广,能有效地应对非高斯噪声的影响,具有广泛的适用性.通过以DS-CMDA系统为例,将分数低阶统计量广义恒模肓多用户检测算法与传统恒模盲多用户检测算法(CMA)、分数低阶统计量恒模盲多用户检测算法(FLOS-CMA)进行了对比,实验仿真结果表明:无论在高斯白噪声下还是在α稳定分布噪声下,分数低阶统计量广义恒模盲多用户检测算法均具有良好的抗多址干扰和抑制噪声的性能,并且该算法具有更快的收敛速度.     

基于最小二乘恒模算法及子空间方法的盲多用户检测算法

恒模算法（CMA)是一种广泛应用于阵列处理、均衡、多用户检测中的盲算法。最小二乘恒模算法(LSCMA)由于其全局收敛性及稳定性受到关注，但是它在信噪比较低时性能不是很理想。本文将最小二乘恒模算法与子空间方法相结合，提出一种基于子空间分解的恒模算法，称为LSCM_SUB算法。仿真结果表明这种算法的收敛性能比LSCMA要好，尤其是在信噪比低的时候。     

用于波束形成的最小二乘广义模值算法研究

对用于波束形成的最小二乘广义模值算法(LSGMA)在多种信号环境下的收敛性能进行了分析;在此基础上提出一种新的多用户盲波束形成算法--迭代最小二乘广义模投影(ILSP-GMA)算法,克服LSGMA算法当恒模干扰信号强于所需信号时会错误收敛的缺陷.仿真结果表明该算法可有效适用于多用户情况,并可获得较原迭代最小二乘投影算法(ILSP)更快的收敛速度.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.