T形双波段阻抗变换器设计

阻抗匹配技术在微波工程中十分重要。分析了四分之一波长阻抗变换器的T形等效电路,从而得到了双波段阻抗变换器的设计公式。利用该等效电路,将单频工作方式的四分之一波长阻抗变换器转变为双波段工作方式,以实现2个任意的频率点对任意电阻性负载实现理想的阻抗匹配。对该方法设计的阻抗变换器性能进行了仿真分析,结果显示该方法适用于工程应用。     

微型阻抗变换器

讨论了一种微型阻抗变换器的设计方法。通过对阻抗匹配方程的分析,发现阻抗变换器的长度能显著的减小,变换器总的长度比常用的四分之一波长阻抗变换器缩短了33%,并对其匹配性能进行了分析。该阻抗变换器可用于微型、窄带阻抗变换。     

并发双波段Doherty射频功率放大器

通过分析并发双波段阻抗变换网络,设计了双波段延时线以及双波段四分之一波长阻抗变换网络。在传统Doherty功率放大器基础上,运用双波段阻抗变换网络,设计了一款并发双波段Doherty。为了验证该并发结构的可行性,采用CREE公司的GaN功放管,设计了一款工作在2.1GHz以及2.5GHz频带的Doherty功率放大器,并实现了双频带内输出功率回退6dB时漏极效率大于33%,输出功率大于41.5dBm,且合路增益10dB左右。测试结果表明,并发双波段Doherty功放将更适合现代通信对多模多波段的要求。     

两节传输线阻抗变换器的分析与设计

阐述了一个两节理想传输线阻抗变换器的设计方法,该传输线阻抗变换器能以任意两个频率点对任意的纯电阻负载实现阻抗匹配。在给定的约束条件下,通过对该阻抗变换器方程进行解析,得到所有的设计参数,并对所设计的阻抗变换器进行仿真分析,结果显示了该设计方法的正确性。     

通信基站成对可重构四波段功率放大器的应用研究

为满足通信基站对功率放大器的需求,提出了一种新型的成对可重构四波段阻抗变换器,该阻抗变换器采用双Π 型与T 型的混合结构,通过插入PIN 二极管实现匹配电路的可重构性。经理论推导和仿真优化,设计的可重构四波段匹配电路可实现任意四个频率上的任意四个不同复数阻抗到实负载端的匹配,实现了在四个工作频率下的扼流。最终设计了一款可应用于2G—5G 通信标准下移动通信基站的可重构四波段功放模块。实测功放饱和输出功率在10 W 左右,且增益平坦度小于±1 dB,在饱和输出功率下的最大附加效率可达到39.5%,同时具有高增益平坦度的特点,整体电路结构简单。     

任意频率比双频率阻抗变换器

讨论了双频阻抗变换器的设计方法 ,该阻抗变换器能在两个任意的频率点对任意电阻性负载实现理想的阻抗匹配 ,通过对两节传输线匹配方程的严格解 ,得到了双频阻抗变换器的精确设计公式 ,对用该方法设计的阻抗变换器性能进行了仿真分析 ,仿真结果显示了该方法的有效性 ,其结果可用于实际的设计问题。     

双波段射频功率放大器理论与设计

提出了一种新型的双频阻抗变换器结构,该阻抗变换器采用T 型与装型结构相结合的方式,经理论推导和仿真优化,设计的双频阻抗变换器可实现任意两个频率上的任意两个不同复数阻抗到实数阻抗的变换。采用双频偏置电路,实现了在两个工作频率下的扼流,最终设计了一款可同时应用于TD-LTE 和GSM 网络的双波段射频功率放大器。相比于其它的多模多频带功率放大器,该双频阻抗变换器理论推导过程简单,容易实现,并可实现68%以上的功率附加效率,同时具有高输出增益和高平坦度的特点,整体电路结构简单。     

L波段紧凑型平面三路功率合成器设计

提出了一种平面结构的L波段三路功率合成器,通过两节三路四分之一波长阻抗变换器与平面隔离电阻构成的微带电路实现。合成器使用仿真软件优化计算结果并得到最终设计。测试结果与仿真结果吻合：在1.1GHz至1.7GHz带宽内,各个端口驻波比小于1.13;输入端口间隔离度大于25dB;合成效率大于94.5％且最大幅度不平坦度小于0.05dB。这种功率合成器结构紧凑,性能达到设计要求。     

一种新型微带交指带通滤波器的设计

分析了四分之一波长阶跃阻抗谐振器(SIR)能够抑制寄生响应的特点和实现滤波器小型化设计的原理。利用SIR增加了设计滤波器的灵活度,实现了对L波段传统微带交指带通滤波器的改进,得到了基于SIR结构的新型微带交指带通滤波器。仿真试验结果证明:改进后的滤波器第一寄生响应向后推移1.4 GHz,整个滤波器的面积可以减少32%,该设计方法有效。     

一种宽频带3dB环形电桥设计

讨论并设计了一种改进的3dB宽频带环形电桥.采用在各引出臂上加四分之一波长阻抗变换器,并将环分为特性阻抗不同的6段,使其带宽增宽,理论上带宽可以达到40%左右,并给出了微带型电桥的设计、仿真及实测结果.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.