基于LVDS的高速图像数据存储器的设计与实现

为实现高速图像数据的实时接收存储和有效转发,设计了一种基于Flash的高速大容量固态数据存储器。该存储器以LVDS作为数据传输接口来接收两路高速数字图像数据;用外部FIFO作为图像数据缓存以确保数据接收和存储的并行性;通过FPGA控制整个系统的运行。经实际应用,该系统可成功地完成图像数据的接收、存储和转发功能。     

基于NiosⅡ的图像数据采集转发系统的设计

为实现高速图像数据的实时接收存储和有效转发,设计了一种基于NiosⅡ嵌入式处理器的图像数据采集转发系统.系统采用模块化设计思想,按功能分为3个模块:数据接收模块负责接收LVDS数据;嵌入式处理器NiosⅡ完成整个系统的数据处理和控制;数据转发模块负责PCM数据转发.经实际应用,该系统可成功地完成图像数据的接收、存储和转发功能.     

大容量弹载数据记录器的设计与实现

提出了一种大容量弹载数据记录器的设计方案,该方案主要完成3路高速图像数据的接收,每个通道的数据带宽为每秒150Mbyte/s,存储容量为128GByte。设计选用Xilinx公司的FPGA作为主控制器,完成对高速数据的接收,缓存和存储。接收单元采用FPGA内部集成的高速串行收发器RocketIO GTP,单个链路的数据接收速率为3.125Gbps;缓存单元采用两片DDR2 SDRAM芯片对接收到的高速数据进行乒乓缓存;存储单元采用32片NAND FLASH构成存储阵列,对缓存后的数据进行存储。同时,该记录器能够对存储的数据进行事后读取并进行分析。     

一种高速大容量图像存储装置的关键技术研究

针对高速图像采集存储要求,设计一种高速大容量存储装置。该装置以FPGA为主控芯片,以FPGA内部集成的高速串行收发器Rocket I/O GTP作为图像数据接收单元,通过FPGA控制MCB硬核操作2片DDR2 SDRAM构成兵乓缓存单元,以32片NAND FLASH组成的阵列为存储单元,采用交叉双平面页编程技术对FLASH进行数据存储。实现了对3个速率为50 MB/s的图像通道数据实时采集存储。通过对FLASH阵列中的图像数据进行回读分析,测试结果无误,验证了系统功能的有效性和可靠性。     

基于Nios II的弹载高速图像存储记录仪

针对传统弹载图像存储记录仪存在硬件电路体积大、系统扩展性差、数据存储速率低等问题,提出了一种基于Nios II的弹载高速图像存储器设计方案。以FPAG片上软核处理器Nios II为控制核心,采用新的双级流水线存储阵列结构实现图像数据的高速存储,通过信号接口阻抗匹配方案有效增强LVDS图像信号接收稳定性。系统能以240Mb/s的速率循环存储图像数据,具有稳定性强和微体积的优点,试验证明系统稳定可靠,能实现弹载高速图像的精准高速存储。     

阵列存储在遥测图像采集系统中的应用

主要研究了阵列存储在遥测图像采集系统中的应用,设计了一种以CPU+FPGA为核心的图像存储转发系统,通过LVDS总线接收数字图像信号,经过阵列存储器缓存编码后,以PCM串行码的形式下传给接收机.阵列存储可以有效缓存图像数据,完成图像数据的缓存和转发功能,实现图像数据的无缝传输.     

基于FPGA的高速图像存储系统的设计

针对遥测试验中产生的高帧频、高分辨率的图像数据实时存储等问题,设计了一种高速图像存储系统。该系统以Spartan 6系列FPGA作为核心处理器,采集高速工业相机以base模式输出的像素数据,并对DDR3缓存时序进行优化,最后通过SATA2.0接口存入固态硬盘中。试验完成后,通过千兆以太网接口回读数据至上位机并进行显示。测试结果表明,该系统能够对71 f/s帧频、2048×1088像素的高速图像数据进行长时间可靠存储与显示,该设计有较高的移植性和应用价值。     

卫星地面站高速数据传输终端平台设计

提出了一种具有开放式架构的新型高速数据传输终端平台,它以RapidIO作为各处理板卡的监控指令接口,以两个8×PCIe作为各处理板卡的数据接口。设计了有源交换网络背板实现系统互联;设计了通用处理板卡通过软件重构以实现数据上行调制或数据下行接收功能;下行接收的数据通过块数据传输,传输速率最高达40 Gb/s;通过独立磁盘冗余阵列扩展固态盘阵列实现数据高速记录,数据记录速率不低于500 MB/s;通过万兆以太网接口实现数据高速实时转发,数据转发速率不低于4 Gb/s;上行调制数据实时注入实时调制,数据速率不低于2 Gb/s。该平台硬件可扩展,软件可升级,控制和数据总线解耦合,可通过软件重构实现功能配置和在线更新,具有良好的扩展性和通用性,已在地面终端站高速数据传输系统中得到工程应用。     

图像数据远距离传输及高速实时存储技术

研究了一种可以实现图像数据的远距离传输和高速实时存储的技术。该技术以FPGA为逻辑控制单元,通过LVDS接口电路远距离传输采集到的图像数据;利用交叉双平面页编程技术流水线式写FLASH以提高存储速度。用CY7C68013A控制的USB2.0接口上传FLASH中的数据到计算机,最后用上位机软件分析数据。结果表明,该系统稳定可靠地远距离传输并高速存储了图像数据。     

基于FPGA的远程图像采集系统设计

本文介绍了一种基于FPGA实现的图像采集系统,通过FPGA控制外部高速成像设备所产生的图像数据、参数信息和状态控制信号的同步采集,并实现数据格式的转换、图像数据的组帧、存储及转发功能。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.