射频磁控溅射法制备液晶光阀光导层的研究

采用射频磁控溅射的方法制备了用于液晶光阀光导层的氢化非晶硅薄膜,研究了工艺参数对氢化非晶硅薄膜透过率及光电导性能的影响。结果表明,薄膜的沉积速率随着溅射功率和衬底温度的升高呈先增加后减小的趋势,在衬底温度为300℃,溅射功率为300W左右沉积速率达到最大,在溅射2h后沉积速率随着溅射时间的增加而下降;薄膜的光吸收系数随衬底温度的升高而增大,随溅射功率的增加而减小;交流电导率随衬底温度和溅射功率的升高而下降;薄膜在可见光范围内透过率随着H分压的增大而增大,且吸收边发生蓝移。     

PZT薄膜的深槽反应离子刻蚀研究

研究了锆钛酸铅(PZT)薄膜的深槽反应离子刻蚀(DRIE)技术。首先,对比了3种工艺气氛条件下(SF6/Ar、CF4/Ar和CHF3/Ar)刻蚀PZT的效果。实验结果表明,3种工艺气氛下,刻蚀速率都随功率的增加而增加。相同功率下,SF6/Ar的刻蚀速率最高;而CHF3/Ar刻蚀PZT的图形形貌最好,对光刻胶的选择比也最好。最后得出了优化的工艺条件为采用CHF3/Ar,射频(RF)功率为160 W,气体流量比为3∶4(CHF3∶Ar=30 cm3/min:40 cm3/min)时,PZT薄膜的刻蚀速率为9 nm/min,光刻胶的选择比为7。     

射频功率对a-C:F薄膜沉积速率和结构的影响

用射频等离子体增强型化学气相沉积法制备了a-C:F薄膜,并研究了射频功率对a-C:F薄膜沉积速率和结构的影响。用椭偏仪测量了薄膜的厚度,并用红外谱(FITR)结合Raman谱研究了其结构的变化。结果表明:薄膜沉积速率在10~14 nm/min之间,主要含有CFx和C=C键。随射频功率的升高,沉积速率先增大后减小,CF3的含量迅速减小,CF和CF2的含量略有增加,薄膜中r(F/C)呈下降的趋势。在较高功率下沉积的薄膜中出现了由sp2和sp3混合微晶结构。     

铝掺杂氧化锌薄膜在玻璃衬底上的RF反应共溅射低温织构生长

以金属锌( Zn)和铝( Al)为靶材采用射频( RF)反应共溅射技术在低温( 2 0 0℃)玻璃衬底上沉积了铝掺杂氧化锌( Zn O∶Al)薄膜.运用扫描电子显微镜( SEM)、能量色散X射线谱( EDX)、表面轮廓仪(α- Step)、X射线衍射( XRD)和双光束紫外-可见光谱仪( U V- VIS)等分别对沉积样品的表面和断面的形貌结构、组成成分和光学特性进行了分析表征.研究了反应气体氧与氩流量比( O2 / Ar)和RF溅射功率对沉积样品的生长速率、结构特征和光电学性质的影响.结果表明,薄膜的成长速率强烈依赖于RF溅射功率,而薄膜的结构形貌和成分的化学配比则主要由反应气体流量比O2 / Ar     

溅射功率对Au与CdZnTe晶体接触结构和性能的影响

采用直流磁控溅射工艺,以Au为靶材在高阻半导体CdZnTe上制备导电薄膜.系统地研究了溅射功率对沉积速率、薄膜结构、组织形貌及接触性能的影响.结果表明,随溅射功率的增加沉积速率增大.I-V测试表明在高阻CdZnTe上溅射Au薄膜后不经热处理已具有良好的欧姆接触性能,溅射功率为100 W时的接触性能好于功率为40 W和70 W时的接触性能.     

1nm/s高速率微晶硅薄膜的制备及其在太阳能电池中的应用

采用甚高频等离子体增强化学气相沉积技术,在相对较高气压和较高功率条件下,制备了不同硅烷浓度的微晶硅材料.材料沉积速率随硅烷浓度的增加而增大,通过对材料的电学特性和结构特性的分析得知:获得了沉积速率超过1 nm/s高速率器件质量级微晶硅薄膜,并且也初步获得了效率达6.3%的高沉积速率微晶硅太阳电池.     

1nm/s高速率微晶硅薄膜的制备及其在太阳能电池中的应用

采用甚高频等离子体增强化学气相沉积技术,在相对较高气压和较高功率条件下,制备了不同硅烷浓度的微晶硅材料.材料沉积速率随硅烷浓度的增加而增大,通过对材料的电学特性和结构特性的分析得知:获得了沉积速率超过1 nm/s高速率器件质量级微晶硅薄膜,并且也初步获得了效率达6.3%的高沉积速率微晶硅太阳电池.     

微晶硅薄膜制备中等离子体功率的调制作用

对甚高频等离子体增强化学气相沉积(VHF-PECVD)法制备氢化微晶硅(μc-Si:H)薄膜中等离子体功率的影响进行了研究.原位光发射谱(OES)监测表明,SiH4等离子体中特征发光峰ISiH、Ihα、Ihβ和IH/ISiH均随等离子体激发功率的增加而增大,并且变化趋势因功率区间的不同而异.由厚度与Raman光谱测量可知,随着等离子体功率的增加,μc-Si:H薄膜的平均晶粒尺寸单调减小,而沉积速率与结晶体积分数则呈现出先增后减的变化,等离子体功率对薄膜的沉积速率与结构特征具有"调制作用".光暗电导率测量进一步得到,μc-Si:H薄膜的电导随等离子体功率增大而减小,暗电导率的变化与之相反,材料的光敏特性在较高功率条件下激剧恶化.研究结果表明,当前的沉积条件下,等离子体功率的优化值界于35～40 W间.     

使用ECR苯等离子体沉积含氢非晶碳薄膜

用苯作工作气体。在一个电子回旋共振（ＥＣＲ）微波等离子体化学气相沉积系统中制备了含氢非晶碳膜（ａ－Ｃ：Ｈ）．对苯等离子体作了质谱分析,发现苯分解后形成的主要基团是Ｃ２Ｈ４等,而不是常规甲烷放电的ＣＨ３。这将影响膜的结构。实验中还考察了沉积参数,如功率、气压、流量、基片温度对膜的沉积速率的影响。实验表明：沉积速率随微波功率、气压和流量的增加而上升;随温度的升高先升后降,存在极值,对制备的膜作了氢含量     

低介电常数氟化非晶碳薄膜热稳定性的研究

以CF4和CH4的混合气体为源气体，以Ar为工作气体，用射频等离子体增强化学气相沉积法(rf-PECVD)制备了氟化非晶碳(a-C：F)薄膜，并在Ar气氛中对不同温度下沉积的薄膜进行了退火处理，以考察其热稳定性。用椭偏仪测量了薄膜的厚度，比较了退火前后膜厚的变化；用傅里叶变换红外光谱仪(FTIR)对薄膜进行了分析，发现当退火温度达到350℃时，位于2900cm^-1附近的三个吸收峰几乎全部消失，随着射频功率的增加，980cm^-1～1350cm^-1范围内的CFx(x=1，2，3)峰向低频方向移动；用原子力显微镜(AFM)观察了不同沉积温度下和经不同退火温度处理后薄膜表面形貌的变化，发现随沉积温度的升高，薄膜表面变得均匀，退火后的薄膜表面比没有退火的薄膜表面平坦。     

Influence of boron doping on the properties of amorphous and microcrystalline SiC films prepared using ECR-CVD

Hydrogenated silicon carbide films (SiC:H) were deposited using the electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) method from a mixture of methane, silane, and hydrogen, with diborane as the doping gas. The effect of changes in the percentage of the diborane to reactant gas mixture on the deposition rate, optical bandgap, and photoconductivity were investigated. There is evidence from Raman scattering analysis to show that films deposited at a low microwave power of 150 W were all amorphous and the bandgap decreases as the diborane level is increased whereas films deposited at a high microwave power of 800 W at low diborane levels are highly photoconductive and contain microcrystalline silicon inclusions. These films become amorphous as the diborane level is increased, while the optical bandgap remains relatively unaffected throughout the entire range of diborane levels investigated. The effect of the microwave power was also investigated. The conductivity increases rapidly to a maximum, followed by rapid reduction at high microwave powers. Raman scattering analysis showed evidence of the formation and increase of microcrystalline silicon inclusions and diamond-like components in the films, the former of which could account for the rapid increase and the latter the subsequent decrease in the conductivity.     

The effect of carrier gas and H(hfac) on MOCVD Cu films using (hfac)Cu(1,5-COD) as a precursor

The deposition characteristics of metalorganic chemical vapor deposition (MOCVD) Cu using (hfac)Cu(1,5-COD)(1,1,1,5,5,5-hexafluro-2,4pentadinato Cu(I) 1,5-cyclooctadiene) as a precursor have been investigated in terms of carrier gas effects and adding H(hfac) to the carrier gas stream. Using hydrogen carrier gas led to a higher MOCVD Cu deposition rate and a lower film resistivity compared to an argon carrier gas system. Improvements in surface roughness of the MOCVD Cu films and a (111) preferred orientation texture were obtained by using hydrogen as a carrier gas. When a ligand such as H(hfac) was added to Ar carrier gas, the deposition rate was significantly enhanced. Moreover, H(hfac) added to both carrier gas streams led, to lower MOCVD Cu film resistivity. However, film adhesion was somewhat weak compared to that observed with the Ar or H₂ carrier gas system, probably due to the larger F content near the interface between the copper and the titanium-nitride film. In conclusion, smooth Cu films with a low resistivity can be obtained by manipulating the deposition conditions, such as carrier gas type and ligand addition. The deposition mechanism of MOCVD Cu is also discussed in the paper.     

氟化非晶碳薄膜(a-C:F)的制备与表征

以C4F8和CH4为源气体,采用电子回旋共振等离子体化学汽相沉积(ECR-CVD)方法,在不同气体混合比条件下沉积了非晶氟化碳(a-C:F)薄膜低k层间介质.实验中薄膜的沉积速率可达220nm/min,测得的介电常数为2.14～2.58.X光电子能谱表明,随着甲烷含量增大,薄膜中CF3,CF2结构含量减少而CF和C*-CFx(x=1～3)交联结构增多;原子力显微镜表明,在采用C4F8为前驱气体时,高分子基团C Fy在成膜时造成了粗糙不平、多孔渗水的薄膜表面形貌.结果表明,CF基团成分增加而CF2基团成分减小导致了薄膜电子极化增强,介电常数增大.     

非晶硅薄膜的LF-PECVD制备及椭偏表征

以SiH4为先驱气体,采用低频等离子体增强化学气相沉积（LF-PECVD）方法在Si衬底上制备了氢化非晶硅（a-Si∶H）薄膜。在薄膜沉积过程中,工艺参数将会影响非晶硅薄膜的沉积速率和光学性能。通过反射式椭圆偏振光谱仪（SE）研究了SiH4气体流量、工作压强和衬底温度等条件对氢化非晶硅沉积速率和光学性质的影响。实验结果表明,氢化非晶硅沉积速率随着SiH4流量、工作压强和衬底温度的改变而规律地变化。相比于SiH4流量和工作压强,衬底温度对折射率、吸收系数和折射率的影响更大。各工艺条件下所制备的非晶硅薄膜光学禁带宽度在1.61～1.77eV。     

Effect of microwave power and reactive gas ratio on the properties of silicon nitride thin films deposited by ECR PECVD

Silicon nitride films were deposited at room temperature on a single crystal silicon substrate by ECR PECVD (electron cyclotron resonance plasma enhanced chemical vapor deposition). Effects of the microwave power and the reactive gas ratio (SiH₄/N₂) on the film properties, such as, refractive index and breakdown field were investigated. It turned out that the microwave power was closely related to the change in refractive index of the silicon nitride films, while breakdown field did not change much from 6 MV/cm. It was also found that the deposition rate, refractive index, and breakdown field were changed in a certain way with respect to the change in SiH₄/N₂ ratio, which could be explained in terms of the activated chemical species concentrations in the plasma during deposition.     

The CVD growth of Cu films using H2 as carrier gas

Copper chemical vapor deposition from Cu(hexafluoroacetylacetonate)trimethylvinylsilane (Cu(hfac)TMVS) was studied using a low pressure chemical vapor deposition system of a cold wall vertical reactor. The Cu films deposited using H₂ as a carrier gas revealed no impurities in the films within the detection limits of Auger electron spectroscopy and x-ray photoelectron spectroscopy. Using hydrogen as a carrier gas, the hydrogen not only acts as a reducing agent, but also reacts with the residual fragment of precursor. As a result, using H₂ as a carrier gas for Cu(hfac)TMVS resulted in Cu films of lower resistivity, denser microstructure and faster deposition rate than using Ar or N₂ as the carrier gas. Moreover, we found that N₂ plasma treatment on the substrate surface prior to Cu deposition increased the deposition rate of Cu films.     

溅射参数对Ge2Sb2Te5薄膜光学常数的影响

研究了溅射参数对Ge2Sb2Te5薄膜的光学常数随波长变化关系的影响,结果表明：(1)当溅射功率一定时,随溅射氩气气压的增加Ge2Sb2Te5薄膜的折射率先增大后减小,而消光系数先减小后增大.(2)当溅射氩气气压一定时,对于非晶态薄膜样品,在500nm波长以下,折射率随溅射功率的增加先增加后减小,消光系数则逐渐减小;在500nm以上,折射率随溅射功率的增加逐渐减少,消光系数先减小后增加.对于晶态薄膜样品,在整个波长范围折射率随溅射功率的增加先减小后增加,消光系数则逐渐减少.(3)薄膜样品的光学常数都随波长的变化而变化,在长波长范围变化较大,短波长范围变化较小.探讨了影响Ge2Sb2Te5薄膜光学常数的机理.     

甲烷流量对8.5代非晶硅光伏组件P层材料结构和光学性质的影响

本文研究了甲烷流量对作为工业非晶硅光伏组件的p层材料—非晶碳化硅结构和光学性质的影响.p层非晶碳化硅薄膜采用硅烷和甲烷混合气体在射频等离子体增强化学气相沉积(RF-PECVD)设备中沉积制得,该设备是应用材料公司制造的尺寸为2.2 m × 2.6 m的8.5代系统.采用红外光谱和透射/反射谱分析与沉积工艺相关的键结构和光学性质.相同工艺条件下,当甲烷含量从3000 sccm增加到8850 sccm, p层非晶碳化硅薄膜的光学带隙逐步增加. p层非晶碳化硅薄膜的沉积速率随甲烷流量的增加而逐渐减小,其原因是硅烷-甲烷等离子体中SiH3粒子的减少.文中还通过在不同位置取样和分析沉积速率研究了大面积薄膜的均匀性.     

SAW器件用金刚石膜的制备工艺研究

针对声表面波( SAW)器件对金刚石膜的要求,采用石英钟罩式微波等离子体化学气相沉积(MPCVD)装置,研究了不同气体体系对金刚石膜生长速率、电阻率、表面形貌、表层C化合态及相对含量(粒子数分数Xc)的影响.结果表明:在H2-CH3COCH3、CH4-H2-Ar和CH4-H2-N2三种气体体系下,金刚石膜的生长速率分别...     

a-Si:H薄膜的磷-碳二元复合掺杂改性研究

以SiH4,PH3,CH4为源气体,采用射频等离子增强化学气相沉积(RF-PECVD)方法,通过改变CH4流量制备了磷、碳二元掺杂非晶硅薄膜,研究了磷、碳二元掺杂对薄膜微观结构和光学性能的影响.用X射线光电子能谱仪(XPS)观察到了C-Si峰的存在,同时发现随着CH4流量的增加,薄膜中C元素含量逐渐增大.傅里叶转换红外光谱(FTIR)测试表明,掺杂薄膜中的H含量随着CH4流量的增加逐渐增大,由11.5%增大到24.6%.光学性能测试表明,随着CH4流量的增加,掺杂薄膜的折射率逐渐降低,而光学带隙逐渐增加.