2μm附近二极管激光吸收光谱CO2浓度测量研究

采用波长2μm附近的可调谐半导体激光二极管作为光源,结合多步吸收光程和光纤传输技术,通过激光吸收光谱直接测量方法对CO2分子浓度进行测量研究。实验在标定了激光器调谐范围内17条CO2吸收谱线的波长及相应的吸收带跃迁的基础上,研究了不同压力下纯CO2气体在2008nm附近的吸收光谱,由吸收信号随气体压力的变化关系得到低气压下实验装置的系统刻度因子。并进一步对样品气体的CO2浓度进行测量,测量给出CO2分子浓度为(2.754±0.145)×1016 cm-3,测量误差主要来源于目前实验中所使用的气压计的精度和读数局限性。该研究为气体分子浓度测量、同位素含量分析提供了一种光谱测量方法。     

全光纤转动拉曼激光雷达的光纤光栅分光技术研究?

设计了一款由可见光波段的光纤布喇格光栅和光纤耦合器构建的全光纤转动拉曼激光雷达分光系统。利用相位掩模板侧向成功刻写530 nm波段光纤布喇格光栅,并初步测试其透射谱和反射谱性能。为提高光纤光栅中心波长与大气氮气分子转动拉曼谱线的匹配特性,利用悬臂梁设计高调谐灵敏度的调谐系统。实验结果表明,成功研制的可见光波段光纤布喇格光栅其反射率约为95%,带宽约为0.3 nm,应力调谐系统可实现± 0.6 nm范围18 pm/r 的波长调谐。     

基于最小二乘法的电力电缆FBG传感测温系统

为了提高电力电缆测温系统的测量精度和速度,提出了以光纤梳状滤波器代替参考光栅提供拟合数据参考点,采用最小二乘法拟合光纤Bragg光栅波长和F-P可调谐滤波器调谐电压的线性关系,通过F-P可调谐滤波器解调FBG传感器中心波长变化的方法,完成对电力电缆温度的测量.研究表明,光纤梳状滤波器能够代替多个恒温参考光栅实现波长标定,对反射波长的测量误差＜5pm,温度均方误差≤0.7 ℃.     

高斯拟合提高光纤布喇格光栅波长检测精度

由于各种光噪声的影响,基于可调谐法布里-珀罗(F-P)滤波器的光栅解调仪解调精度不够高,光路噪声通常会带来10pm量级的波长测量误差.为了提高布喇格波长检测精度,采用了在解调过程中对光纤光栅反射谱进行高斯拟合,从而消减噪声影响的方法.实验发现,拟合后中心波长的测量误差小于2.5pm,温度测量值与实际温度之间的标准方差为0.3°C.结果表明,在有害噪声信号不是非常大的情况下,该方法能有效提高波长检测精度.     

TEA13C16O2激光器的实验研究

为扩展可调谐TEA CO2激光器的输出波长范围，增加差分吸收雷达可探测的物质种类，采用^13C^16O2代替激光器工作气体中的CO2成分。计算了TEA^13C^16O2激光器在Ⅰ波段两个分支上的小信号增益系数分布。利用平面光栅单色仪，在小型快调谐TEA^13C^16O2激光器的Ⅰ波段共测到了32条谱线的能量输出，输出范围为10.663～11.347μm。与采用普通CO2作为工作气体的情况相比，激光器谱线输出范围在长波长方向上有很大扩展，输出的最长波长由CO2的10.74μm增大到11．347μm。测得TEA^13C^16O2激光器的最高输出能量为107mJ，并给出了Ⅰ波段典型谱线脉冲的半峰全宽。     

程差法测量1．315μm附近CO2的吸收

CO2在碘激光波长(1.315 μm)的吸收截面比水汽小得多.我们利用可调谐激光长程吸收光谱测量实验系统,测量了1.315 μm附近CO2的高分辨率吸收光谱,采用测量不同光程的相对透过率方法(程差法)计算出碘激光波长CO2的微弱吸收.结果表明,在1.315 μm波段存在CO2的吸收谱线和连续吸收.在氧碘激光频率(7603.1385 μm-1)CO2的吸收截面(1×10-24 cm2量级) 比按HITRAN 96谱线参数计算的线翼吸收大;与Bragg用光声方法测量的结果相当.本报告将介绍测量实验方法和计算分析结果.(PG8)     

可调谐TEA CO2激光器技术

近年发展起来的激光差分吸收雷达用于遥测大气污染状况,可获得大气污染物浓度的时空分布,这对了解大气污染的分布实况、寻找主要大气污染来源、防治大气污染等均有很重要的价值.TEACO2激光器工作在9～μM的红外波段,大部分大气污染物和化学物质的特征吸收谱都在此波段内.高重复率可调谐的.TEACO2激光器的研制已成为C02激光差分吸收雷达的关键技术.差分吸收雷达从探测方式上可分为相干探测和直接探测方式,其中直接探测方式又可分为后向地物反射方式和距离分辨方式.早期,由于单台激光器快调谐问题尚未解决,一般都采用多台波长固定的CO2激光器组合使用.随着快速调谐技术的发展,差分吸收雷达系统开始采用单台CO2激光发射器.这就使差分吸收雷达系统更加趋于小型化和实用化.利用符合TEA CO2激光器内多种激光混合气体组分的五温度、六温度模型速率方程理论,详细分析了TEACO2激光器的动力学过程,确定激光谐振腔初始条件后,计算了激光器的各种输出特性.激光器输出脉冲参数如峰值功率、粒子数反转、光强、激光能量等均为时间的函数,并且随着输入参数(气压、温度、耦合输出镜反射率等)的不同而作相应的变化.根据理论计算结果,设计研制了两台高重频快调谐TEA CO2激光器,分别采用高频步进电机驱动光栅和扫描振镜+光栅的技术方案实现了激光的快调谐输出.设计了小型化高重复率可调谐的TEA CO2激光器,激光谐振腔长55 cm,采用高频步进电机驱动光栅法,预电离方式为表面电晕紫外预电离,实验得到激光器的一级调谐输出谱线50余条,激光脉冲输出能量30～100 J,峰值功率0.3～1w,谱线分布于9R、9P、10R、10P四个谱区.单片机控制在单台CO2激光器上实现快速调谐输出波长不同的激光脉冲,不同谱线的输出时间间隔约10ms.采用扫描振镜+光栅的调谐技术,又研制了一种双通道放电激励折叠腔.TEA CO2激光器.详细分析了折叠腔TEACO2激光器的结构及其设计特点,谐振腔长约120 cm,影响气体快放电过程的各种因素,如储能电容与峰值电容的比值、工作气压、充放电电感及输入电压的范围等进行了实验研究,确定了充放电谐振回路的最佳参数,实现了双通道的稳定辉光放电.对激光器输出能量与激励电压、混合气体工作气压等参数的关系进行了实验研究,得到激光器自由振荡最大输出能量约为722 mJ.工控机程序控制扫描振镜+光栅的偏转角度,实现了激光的可调谐输出.激光器脉冲重复频率可达到100 Hz,实验得到一级调谐输出谱线80条.强支谱线如10P(20)、9P(18)支输出能量约400 mJ,弱支谱线如10P(48)、9P(42)支谱线能量约100 mJ.经测量,弱支谱线的远场发散角水平方向和垂直方向均为1.21 mrad,约为2倍衍射极限.实现了任意波长两条谱线在10 ms时间内快速切换输出.     

由高双折射光纤环镜构成的可变波长输出的L-波段掺铒光纤激光器

报道了一种结构简单的可变波长输出的L 波段线型腔掺铒光纤激光器。其中的波长选择器件为一包括两段高双折射光纤在内的光纤环镜 ,通过调整环镜内偏振控制器的状态可以改变环镜对不同波长的反射率以获得可变波长输出的效果。线型腔内用 980nm激光抽运铒光纤产生的ASE作二次抽运源 ,使腔内铒光纤的增益谱由C 波段位移到L 波段。实验中观察到波长在 1 5 83～ 1 6 0 0nm范围内可变的稳定激光输出 ,波长调谐范围为 1 7nm     

用超荧光光源实现HCN分子2v3带红外振转谱测量

采用超荧光光源(SFS)搭建了一个新型的气体吸收谱线测量装置,成功实现了对13.332 kPa气压下H13C14N(HCN)气体分子2v3振动带精细结构的准确测量.分析了双程后向(DPB)结构的SFS和HCN分子的结构及振动转动模式,所采用的SFS在2 mW输出功率下,激发了2V3振动带J=0～27的转动能级,输出谱在波长1525.3～1560.3 nm之间平坦度小于1 dBm,可以直接覆盖测量50多条振转谱线,无需多次扫描和数据拟合.利用了SFS高亮度和宽谱的特性,与常用的窄线宽可调谐激光器扫描法和经典吸收法比较,结构简单,成本低,可以很方便地实现实验室条件下气体分子精细结构的研究.     

基于Hi-Bi FLM的离散式L带可调谐掺铒光纤激光器

研究了利用高双折射光纤环形镜（HiBiFLM）结合L带可调谐的波长选择薄膜滤波器,以掺Er^3＋光纤为增益介质,以0．8nm波长间隔计,可获得L波段41个离散可调谐波长的可调谐输出,各信道波长输出功率变化的最大幅度小于3．1dB,光信噪比（OSNR）优于32dB。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.