一种双频左/右旋圆极化可重构环形缝隙微带天线

设计了一种频率比为1.9的双频左/右旋圆极化可重构环形缝隙微带天线,其在高频段和低频段分别工作于线极化和圆极化状态。在该天线中,环形缝隙和相互正交的四个缝隙臂将接地面分为五部分,缝隙臂上跨接两对PIN二极管开关和隔直电容。通过二极管开关的控制,天线在低频频率上可实现左/右旋圆极化的切换,在高频频率上则可保持其线极化性能不变。实验结果表明,天线在1.6 GHz的低频段上具有12.5%的3 dB轴比带宽,在3.06 GHz的高频段上其–10 dB阻抗绝对带宽为100 MHz,成线极化状态,辐射方向图近似不变。     

基于SPCE061A的智能温度计设计

设计一种满足特殊情况的智能体温计,采用凌阳16位单片机SPCE061A作为控制核心,利用其UART口实现联网功能,配以语音输入电路和按键电路实现编程功能,实现状态切换和参数设置。通过语音输出电路实现语音播报,以一线总线数字温度传感器DSl8820为测温元件,实现了语音播报测温结果、不同状态切换和相应参数设置,并可与上位机联机显示历史温度变化曲线,也可联网实现病人与医护人员的隔离测温。该温度计具有实用性强、可靠性高、灵活性好、便于扩展等优点,具有一定的推广应用价值。     

Development of fiber-optic depolarizer and its application tomeasurement systems for polarization-insensitive operation ofsilica-waveguide matrix switches

This paper describes an automatic system that measures the bias and switching currents of all the switch elements in the polarization-insensitive operation of silica-waveguide 8×8 matrix switches. A new type of depolarizer that can be used for coherent laser sources was compactly packaged with an excess loss of 6 dB. The packaged depolarizer was coupled to an automatic measurement system that was achieved mainly by using two 64-channel power supplies that drive all the heaters of a matrix switch via a computer. By using a DFB laser source at 1305 nm, whose output was unpolarized with the depolarizer, all the switch elements could be adjusted so that they were polarization insensitive within 0.3 dB to any polarization state. About 2 hours were required to complete the measurement for one matrix switch     

数控可选通微带滤波器组的设计与仿真

设计了宽频带数控可选通微带滤波器组,采用微波开关实现滤波器组的单个选通。分析了电容加载谐振器的谐波特性,每个带通滤波器被设计成梳状线结构,并用先进的设计系统（ADS）优化其结构参数。数控滤波器组由两片带译码器的微波开关芯片和4个微带滤波器构成。仿真结果表明,三位二进制编码控制每个滤波器的通断,可实现500~2 000 MHz频段滤波器的选通。     

Flexibility of interconnection structures for field-programmablegate arrays

The relationship between the routability of a field-programmable gate array (FPGA) and the flexibility of its interconnection structures is examined. The flexibility of an FPGA is determined by the number and distribution of switches used in the interconnection. While good routability can be obtained with a high flexibility, a large number of switches will result in poor performance and logical density because each switch has significant delay and area. The minimum number of switches required to achieve good routability is determined by implementing several industrial circuits in a variety of interconnection architectures. These experiments indicate that high flexibility is essential for the connection block that joins the logic blocks to the routing channel, but a relative low flexibility is sufficient for switch blocks at the junction of horizontal and vertical channels. Furthermore, it is necessary to use only a few more routing tracks than the absolute minimum possible with structures of surprisingly low flexibility     

RF MEMS开关的设计分析

针对具有低损耗、高隔离度性能的微机电系统(Micro-Electro-Mechanical System,MEMS)开关,介绍了串联DC式和并联电容式的开关结构模型,并对并联电容式MEMS开关的工作原理、等效电路模型和制造工艺流程进行了描述,利用其模型研究了开关的微波传输性能,设计了一款电容耦合式开关并进行了仿真。由仿真结果可得,开关"开态"时的插入损耗在40 GHz以内优于-0.3 dB;开关"关态"时的隔离度在20～40 GHz相对较宽的频带内优于-20 dB。     

基于传输开关理论的电流型多值CMOS电路设计

本文以开关信号理论为指导，对电流型CMOS电路中开关变量和信号变量的相互作用进行了分析，并引入了适用于CMOS电路的电流开关理论。基于电流传输开关理论，对几类重要的三值CMOS电路进行了设计，结果表明，应用该理论能获得简单的电路设计。从而进一步完善了开关级逻辑电路设计的研究。     

惯性冲击对低真空封装的RF MEMS电容开关性能的影响

分析了外界惯性冲击对低真空封装的旁路电容式RF MEMS开关性能的影响.得到了近似计算外界惯性冲击引起位移的解析式.在已知最大容许插入损耗和外部惯性冲击环境条件下,MEMS开关支撑梁的最小机械刚度常数以及外部惯性冲击引起的插入损耗可以根据该式得到.通过RF MEMS电容式开关实例,表明设计低真空封装的RF MEMS电容式开关时应考虑外部环境因素.可见,RF MEMS开关用低真空封装可以减小空气阻尼、改善开关速度和执行电压的同时,开关的性能却容易受外界环境因素的影响.该研究对低真空封装的RF MEMS电容式开关的优化设计很有意义.     

惯性冲击对低真空封装的RF MEMS电容开关性能的影响

分析了外界惯性冲击对低真空封装的旁路电容式RF MEMS开关性能的影响.得到了近似计算外界惯性冲击引起位移的解析式.在已知最大容许插入损耗和外部惯性冲击环境条件下,MEMS开关支撑梁的最小机械刚度常数以及外部惯性冲击引起的插入损耗可以根据该式得到.通过RF MEMS电容式开关实例,表明设计低真空封装的RF MEMS电容式开关时应考虑外部环境因素.可见,RF MEMS开关用低真空封装可以减小空气阻尼、改善开关速度和执行电压的同时,开关的性能却容易受外界环境因素的影响.该研究对低真空封装的RF MEMS电容式开关的优化设计很有意义.     

Planar Models of Reconfigurable MEMS Circuits

This paper presents a general procedure for the electromagnetic modeling of arbitrarily shaped reconfigurable planar circuits using RF microelectromechanical systems switches. In this model, the reconfigurable structure is represented by a linear time-invariant planar multiport, which is connected through internal ports to as many variable lumped-element circuits as the switches. Unlike conventional equivalent circuits, in this technique, the lumped elements represent only a small portion of the switch, and their values are not affected by the proximity of the switch to line discontinuities or to other switches. For this reason, the same values can be reused, with no substantial constraint, in the modeling of very different reconfigurable structures. For any type of switch, the lumped elements are deduced from the experimental or simulated frequency response of a simple prototype. The (arbitrarily shaped) environment of the switches is taken into account in the planar multiport, which is modeled by using very efficient 2-D electromagnetic simulators. Therefore, a lot of different geometries can be easily experimented and the corresponding frequency responses can be readily calculated for any set of the switch states     

RF MEMS单刀四掷矩阵开关的研究

介绍了一个RF MEMS单刀四掷矩阵开关的设计，用四个串联式、电阻接触型、悬臂梁RF MEMS开关制作在微带电路板上完成。在频带1～5GHz内，单刀四掷矩阵开关的插入损耗〈0．8dB，开关隔离度〉38dB，驻波系数〈1．2。悬臂梁开关的激励电压为直流电压35～45V。     

A Novel Unit Cell for Active Switches in the Millimeter-Wave Frequency Range

This paper presents a novel transistor unit cell which is intended to realize compact active switches in the high millimeter-wave frequency range. The unit cell consists of the combination of shunt and common gate transistor within a four-finger transistor cell, achieving gain in the amplifying state as well as good isolation in the isolating state. Gate width-dependent characteristics of the unit cell as well as the design of actual switch implementations are discussed in detail. To verify the concept, two switches, a single pole double throw (SPDT) switch and single pole quadruple throw (SP4T) switch, intended for the WR3 frequency range (220–325 GHz) were manufactured and characterized. The measured gain at 250 GHz is 4.6 and 2.2 dB for the SPDT and SP4T switch, respectively. An isolation of more than 24 dB for the SPDT switch and 12.8 dB for the SP4T switch was achieved.     

脉冲压缩开关DBD研究

延迟击穿器件(DBD)是一种新型的半导体导通式开关,它具有重复工作频率高、体积小、重量轻、稳定性好等优点。利用此种开关对基于半导体断路开关(sem iconductoropening switches,SOS)开关输出的高重复频率的脉冲波形进行压缩,可制作出高重复频率的超宽带脉冲源。介绍了DBD开关的基本工作原理和研制结果,给出了在相同测试条件下,与国外同类开关的测试结果对比波形,结果表明,研制的DBD开关和国外开关的指标基本相同,其中某些指标优于国外开关水平。     

Preservation of Conditionally Nonblocking Switches Under Two-Stage Interconnection

The two-stage interconnection network is conceivably the most compact design for interconnecting small switches into a large switch. Switches so constructed typically can be controlled in the self-routing manner, because the route from an input to an output is unique. Different orderings of network input/output result in different versions of the two-stage interconnection network, two of which are known to preserve various classes of conditionally nonblocking switches. This paper adds Latin-square switches, rotators, reflectors, twisters, and untwisters to this set of classes with applications in load balancing, crosstalk-free optical switching, full connectivity among multiple users, etc. Knowledge of switch preservation under a certain style of multistage interconnection not only allows recursive construction of indefinitely large switches, but also provides insight, generality, and algorithmic flexibility in the construction     

Fully integrated electrothermal multidomain modeling of RF MEMS switches

RF MEMS switches have demonstrated excellent performance. However, before such switches can be fully implemented, they must demonstrate high reliability and robust power-handling capability. Numerical simulation is a vital part of design to meet these goals. This paper demonstrates a fully integrated electrothermal model of an RF MEMS switch which solves for RF current and switch temperature. The results show that the beam temperature increases with either higher input power or increased frequency. The simulation data are used to predict switch failure due to temperature-related creep and self pull-in over a wide range of operating frequency (0.1-40 GHz) and power input (0-10 W). Self pull-in is found to be the dominant failure mechanism for an example geometry.     

A Fast 3-mm Ferrite Switch (Correspondence)

A tetrahedral waveguide junction type of switch has been developed for use in the millimeter region. The design employs a permanent magnet such that the switch operates in the transmission state without any external dc power. By applying a current pulse it switches from the transmission state to the reflective state in 400 ns and back to the transmission state in less than 200 ns. Over the frequency range of 95.5 to 97.2 GHz the switch exhibits a maximum insertion loss of 1.0 dB and a minimum isolation of 25 dB.     

A fast packet switch for the integrated services backbone network

With the projected growth in demand for bandwidth and telecommunication services will come the requirement for a multiservice backbone network of far greater efficiency, capacity, and flexibility than ISDN (integrated-services digital network) is able to satisfy. This class of network has been termed the broadband ISDN, and the design of the switching nodes of such a network is the subject of much research. The author investigates one possible solution. The design and performance, for multiservice traffic, is presented for a fast packet switch based on a nonbuffered, multistage interconnection network. It is shown that for an implementation in current CMOS technology, operating at 50 MHz, switches with a total traffic capacity of up to 150 Gb/s can be constructed. Furthermore, if the reserved service traffic load is limited on each input port to a maximum of 80% of switch port saturation, then a maximum delay across the switch of on the order of 100 μs can be guaranteed, for 99% of the reserved service traffic, regardless of the unreserved service traffic load     

The single-queue switch: a building block for switches withprogrammable scheduling

We introduce a new approach to ATM switching. We propose an ATM switch architecture which uses only a single shift-register-type buffering element to store and queue cells, and within the same (physical) queue, switches the cells by organizing them in logical queues destined for different output lines. The buffer is also a sequencer which allows flexible ordering of the cells in each logical queue to achieve any appropriate scheduling algorithm. This switch is proposed for use as the building block of large-stale multistage ATM switches because of low hardware complexity and flexibility in providing (per-VC) scheduling among the cells. The switch can also be used as scheduler/controller for RAM-based switches. The single-queue switch implements output queueing and performs full buffer sharing. The hardware complexity is low. The number of input and output lines can vary independently without affecting the switch core. The size of the buffering space can be increased simply by cascading the buffering elements     

高隔离度宽频段组合式RF-MEMS开关的设计

接触式与电容耦合式两类RF MEMS开关各自在一定的频段内,都具有较高的隔离度,但仍然很难满足微波控制系统中对高隔离度的要求.为了获得全波段高隔离度RF MEMS开关,单元开关很难达到要求,在此目标要求下,提出了组合式RF MEMS开关的设计,分别利用HFSS软件对各单元进行结构参数优化,再将两者集成在一起,得到的组合式RF MEMS开关,这种组合式开关在0～20 GHz时隔离度都高于-60 dB,在(≤5 GHz),隔离度高于-70 dB,这是一般单元开关及其他半导体固态开关所无法企及的,而且,在DC～20 GHz范围内,开关的插入损耗小于-0.20 dB,而且并没因隔离度的提高,牺牲了插入损耗.     

A MEMS reconfigurable matching network for a class AB amplifier

This letter presents the design of a reconfigurable amplifier with an adaptive matching network implemented by shunt MEMS switches. In particular, the MEMS switches are used as capacitive stubs in double-stub matching circuit designs. The effective capacitance of the switches can be varied by switch activation which results in a change of the matching configuration. The RF response of the adaptive matching network is studied and the power performance of the amplifier is presented.