溅射工艺对BST薄膜取向行为的影响

采用射频磁控溅射法在Si(100)衬底上沉积了Ba0.65Sr0.35TiO3薄膜.借助XRD、AFM和SEM研究了衬底温度、退火温度、溅射气压等不同的溅射参数对Ba0.65Sr0.35TiO3薄膜的晶化行为和显微结构的影响.在室温下沉积并未经退火处理的Ba0.65Sr0.35TiO3 薄膜是无定形态,在较高温度下沉积的薄膜晶化相对较好;随着在氧气气氛中退火温度的升高,X射线衍射峰的半峰宽变窄,衍射峰强度增强;在0.37～1.2Pa气压下沉积的Ba0.65Sr0.35TiO3薄膜有(110)和(200)主衍射峰,且其强度随溅射气压的增加而增强;当溅射气压继续升到3.9Pa,(110)和(200)衍射峰明显增强,说明Ba0.65Sr0.35TiO3 薄膜具有(110) (200)择优取向.AFM和SEM结果显示薄膜晶粒细小均匀、结构致密、表面平整,且无裂纹、无孔洞.分析结果显示优化工艺参数制备的Ba0.65Sr0.35TiO3 薄膜是用以制备非致冷红外探测器的优质材料.     

溅射功率对AZO／Cu／AZO多层薄膜结构与光电性能的影响

在玻璃衬底上利用磁控溅射法制备AZO／Cu／AZO多层薄膜,研究了溅射功率对AZO薄膜的微观结构和光电性能的影响。采用X射线衍射（XRD）仪、扫描电子显微镜（SEM）、紫外可见光谱仪（UVVis）等方法,对AZO薄膜的形貌结构、光电学性能进行了测试。结果表明：不同溅射功率下沉积的AZO薄膜均呈C轴择优取向,溅射功率对AZO／cu／AZO多层薄膜结构与光电性能有一定的影响。在溅射功率为120W、衬底温度为2500C、溅射气压为0．5Pa时薄膜的光透过率为75％,最低电阻率为2．2×10-4Ω·cm、结晶质量、表面形貌等得到明显改善。     

不同溅射气压对β-FeSi2形成的影响木

采用磁控溅射方法，在不同的溅射气压（Ar气0．5-3．0Pa）条件下沉积纯金属Fe到Si（100）衬底上，通过真空退火炉在800℃对样品进行保温2h，直接形成了正交的β-FeSi2薄膜，利用X射线衍射（XRD）、扫描电镜（SEM）、椭偏光谱仪，对不同溅射气压下合成的β-FeSi2薄膜的结晶特性、表面形貌及光学性能进行表征，研究了不同溅射气压对制备β-FeSi2薄膜的影响。结果表明：在1．5Pa时能形成较好的β-FeSi2薄膜，临界溅射气压在2．0Pa附近，当溅射气压低与临界值时，β-FeSi2薄膜的成核密度较高，且成核密度随溅射气压的增大而降低；当溅射气压超过临界值以后，β-FeSi2薄膜的成核密度基本不变；薄膜的折射率n随压强的增大而增大，消光系数k随压强的增大而减小。     

磁控溅射法制备CdS多晶薄膜工艺研究

采用磁控法制备了CdS薄膜,研究工艺参数对样品沉积质量、沉积速率及晶体结构的影响。实验发现,在不同衬底上制备CdS薄膜时需要采取不同的后续工艺措施以获得较好的沉积质量。同时,制备样品的沉积速率随衬底类型、衬底温度、溅射功率及溅射气压的变化而变化。讨论并给出了工艺参数对上述实验结果的影响机制。X射线衍射谱显示,制备样品是六方和立方两种晶型的混合,沿(002)和(111)晶面择优取向生长。随溅射功率的增大和衬底温度的升高,两种晶型互相竞争生长并分别略微占优势。当溅射功率增大到200 W,衬底温度升高到200℃时,占优势晶型消失,薄膜择优取向特性变得更好。此外,随着溅射气压的增大,样品结晶质量下降,在0.5 Pa时呈现明显非晶化现象。     

SiO2/Si上直流磁控反应溅射制备AIN薄膜

利用正交设计分析了直流磁控溅射中溅射气压,衬底温度和N2浓度对SiO2/Si衬底上制备的AIN薄膜的（002）择优取向的影响水平。利用X-射线衍射（XRD）、场发射扫描电镜（FESEM）、原子力显微镜（AFM）对薄膜的晶向和表面形貌进行了分析,得到制备高度择优取向的AIN薄膜的最佳期望条件：衬底温度为250℃,溅射气压为2Pa,N2浓度为75％;并得出了氮气浓度对薄膜的（002）择优取向的影响较大。具有择优取向的AIN薄膜的折射率约为2．06。     

溅射气压对直流磁控溅射ZnO:Al薄膜的影响(英文)

采用直流磁控溅射法在玻璃基片上沉积ZnO:Al(AZO)薄膜,溅射气压为0.2～2.2 Pa.通过X射线衍射(XRD)、扫描电子显微镜(SEM)、四探针和紫外–可见分光光度计对AZO薄膜的相结构、微观形貌和电光学性质进行了表征.结果表明:薄膜的沉积速率随着溅射气压的增大而减小,变化曲线符合Keller-Simmons模型;薄膜均为六角纤锌矿结构,但择优取向随着溅射气压发生改变;溅射气压对薄膜的表面形貌有显著影响;当溅射气压为1.4 Pa时,薄膜有最低的电阻率(8.4×104 Ω·cm),高的透过率和最高的品质因子Q.     

射频反应磁控溅射制备AlN多晶薄膜及其择优取向研究

采用RF反应磁控溅射在Si(111)基片上制备了多晶AlN薄膜,研究了工作气压对AlN薄膜晶面择优取向的影响。利用台阶仪、X射线衍射(XRD)、红外吸收光谱(FTIR)对AlN薄膜的沉积速率、晶体结构、化学结构及成分进行了表征。结果表明:工作气压对AlN薄膜晶面择优取向具有十分显著的影响,当工作气压低于0.6 Pa时,薄膜呈现(002)晶面择优取向;当气压增加到1 Pa时,AlN薄膜呈现(100),(002)混合晶面取向;当工作气压为1.5 Pa时,(002)晶面衍射峰消失,薄膜呈现(100)晶面择优取向。根据分析结果,提出了工作气压对AlN薄膜择优取向的影响机制,其次,在AlN薄膜的FTIR光谱中,Al-N键振动在波数为678 cm-1处有强烈的吸收峰,Al-N振动吸收峰包含A1(TO)模式以及E1(TO)模式,分别位于612,672cm-1附近,A1(TO)模式与E1(TO)模式振动吸收峰的积分面积之比与AlN薄膜的择优取向有关。结果显示FTIR技术可以作为XRD的补充手段,用于表征多晶AlN薄膜的择优取向。     

直流磁控溅射制备铝薄膜的工艺研究

采用直流磁控溅射方法，以高纯Al为靶材，高纯Ar为溅射气体，在玻璃衬底上成功地制备了铝薄膜，并对铝膜的沉积速率、结构和表面形貌进行了研究。结果表明：A1膜的沉积速率随着溅射功率的增大先几乎呈线性增大而后缓慢增大；随着溅射气压的增加，沉积速率先增大，在一定气压时达到峰值后继续随气压的增大而减小。X射线衍射图谱表明Al膜结构为多晶态；用扫描电子显微镜对薄膜进行表面形貌的观察，溅射功率为2600W，溅射气压为0．4Pa时制备的Al膜较均匀致密。     

氮化铝压电薄膜的晶面择优取向

采用直流磁控反应溅射方法,在Ｓｉ（１１１）基片上成功地沉积了表面粗糙度小、组成均匀、以（１００）面和（００２）面择优取向的Ａ１Ｎ薄膜,研究了溅射气压、溅射功率和靶基距对Ａ１Ｎ薄膜结构及晶面取向的影响。结果表明,溅射气压低,靶基距短,有利于以（００２）面择优取向;相反,溅射气压高,靶基距长,则对（１００）面择优取向有利;溅射功率过高或过低均不利于晶面择优取向。并从Ａ１－Ｎ化学键的形成以及溅射粒子平均自由程的角度探讨了Ａ１Ｎ压电薄膜晶面择优取向。     

基底材料对沉积氮化钛薄膜及其性能的影响

研究了利用直流反应磁控溅射法,以Si—P（111）和Si—P（100）两种不同Si片做基底,对制备TiNx薄膜性能的影响。结果表明,以Si--p（111）为基底制备的TiNx薄膜性能优于Si--p（100）基底,表现在颗粒更细润,XRD衍射峰峰形更明锐且与TiNx的衍射峰不会重叠。因而,选用p--Si（111）做基底沉积氮化钛薄膜,可满足制备光学薄膜质量方面的要求。     

直流反应磁控溅射法制备氮化钛薄膜

研究了采用直流反应磁控溅射法制备TiN薄膜的工艺条件。研究发现：在保持其它工艺参数不变的条件下,溅射的TiN薄膜在不同温度区域存在的物相不同,薄膜的主要成分是多晶立方相TiN,240℃附近是薄膜择优取向由（111）向（200）转变的临界点。随着基底温度升高,薄膜表面粗糙度先变小后变大,沉积最佳基底温度值是330℃,该温度下薄膜的粗糙度最小,膜层致密均匀,没有大尺寸缺陷且光洁度好。     

Microstructural characterizations and hardness evaluation of d.c. reactive magnetron sputtered CrN thin films on stainless steel substrate

Chromium nitride (CrN) thin films were deposited on stainless steel (grade: SA304) substrate by using d.c. reactive magnetron sputtering and the influence of process parameters such as substrate temperature, pressure, and power on their microstructural characteristics were investigated in the present work. The CrN films were characterized with X-ray diffraction (XRD) to reveal the formation of different phases and its texture. The films showed the (111) preferred orientation but its intensity decreased, while intensity of peak (200) increased with increase in working pressure. The mixture of CrN and Cr₂N phases were identified at low working pressure and temperature. The preferred orientations of CrN thin films are strongly influenced by sputtering conditions, thickness, and the induced residual stress in the films as observed in the present work. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to characterize the morphology and surface topography of thin films, respectively. The study shows that the hardness of films strongly depends on the grain size and the film density, which are influenced by combined effect of the working pressure, temperature, and power of the sputtering process.     

溅射功率对ZnO：Si透明导电薄膜性能的影响

采用直流磁控溅射法在室温玻璃基片上制备出了掺硅氧化锌（ZnO：Si）透明导电薄膜,研究了溅射功率对ZnO：Si薄膜结构、形貌、光学及电学性能的影响,实验结果表明,溅射功率对ZnO：Si薄膜的生长速率、结晶质量及电学性能有很大影响,而对其光学性能影响不大。实验制备的ZnO：LSi薄膜为六方纤锌矿结构的多晶薄膜,且具有垂直于基片方向的c轴择优取向。当溅射功率从45W增加到105W时,薄膜的晶化程度提高、晶粒尺寸增大,薄膜的电阻率减小;当溅射功率为105W时,薄膜的电阻率达到最小值3．83~104n·cm,其可见光透过率为94．41％。实验制备的ZnO：Si薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极。     

Cu3N薄膜的制备与性能研究

采用反应射频磁控溅射方法,在玻璃基底上成功制备出了氮化铜（Cu3N）薄膜,并研究了溅射参数对Cu3N薄膜的结构和性能的影响,结果显示,随着溅射功率和氮气分压的增加,氮化铜薄膜的择优取向由（111）方向向（100）方向改变。随着基底温度从70℃增加到200℃,薄膜从Cu3N相变为cu相。紫外可见光谱、四探针电阻仪等测试表明,当溅射功率从80W逐渐增加到120W时,薄膜的光学能隙从1．85eV减小到1．41eV,电阻率从1．45× 10^2Ω·cm增加到2．99× 10^3Ω·cm。     

Electrical,morphological and structural properties of RF magnetron sputtered Mo thin films for application in thin film photovoltaic solar cells

Molybdenum (Mo) thin films were deposited using radio frequency magnetron sputtering, for application as a metal back contact material in “substrate configuration” thin film solar cells. The variations of the electrical, morphological, and structural properties of the deposited films with sputtering pressure, sputtering power and post-deposition annealing were determined. The electrical conductivity of the Mo films was found to increase with decreasing sputtering pressure and increasing sputtering power. X-ray diffraction data showed that all the films had a (110) preferred orientation that became less pronounced at higher sputtering power while being relatively insensitive to process pressure. The lattice stress within the films changed from tensile to compressive with increasing sputtering power and the tensile stress increased with increasing sputtering pressure. The surface morphology of the films changed from pyramids to cigar-shaped grains for a sputtering power between 100 and 200 W, remaining largely unchanged at higher power. These grains were also observed to decrease in size with increasing sputtering pressure. Annealing the films was found to affect the resistivity and stress of the films. The resistivity increased due to the presence of residual oxygen and the stress changed from tensile to compressive. The annealing step was not found to affect the crystallisation and grain growth of the Mo films.     

Reactive DC Magnetron Sputtering Deposition of Copper Nitride Thin Film

Copper nitride thin film was deposited on glass substrates by reactive DC （direct current） magnetron sputtering at a 0.5 Pa N2 partial pressure and different substrate temperatures. The as-prepared film, characterized with X-Ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy measurements, showed a composed structure of Cu3N crystallites with anti-ReO3 structure and a slight oxidation of the resulted film.The crystal structure and growth rate of Cu3N films were affected strongly by substrate temperature. The preferred crystalline orientation of Cu3N films were （111） and （200） at RT, 100℃. These peaks decayed at 200℃ and 300℃ only Cu （111） peak was noticed. Growth of Cu3N films at 100℃ is the optimum substrate temperature for producing high-quality （111） Cu3N films. The deposition rate of Cu3N films estimated to be in range of 18-30 nm/min increased while the resistivity and the microhardness of Cu3N films decreased when the temperature of glass substrate increased.     

Power and pressure effects upon magnetron sputtered aluminum doped ZnO films properties

In this work, polycrystalline aluminum doped zinc oxide (ZnO:Al) films with c-axis (002) orientation have been grown on glass and silicon substrates by RF (radio frequency) magnetron sputtering technique, at room temperature. A systematic study of the effect of sputtering deposition parameters (i.e. RF power and argon gas pressure) on the structural, optical and electrical properties of the films was carried out. We observed that, with increasing RF power the growth rate increased, while it decreased with increasing gas pressure. As mentioned above, the films were polycrystalline in nature with a strong preferred (002) orientation. The intrinsic compressive stress was found to decrease with both increasing RF power and gas pressure, and near stress-free film was obtained at 200 W RF power and 2 × 10^− 1 Pa gas pressure. The obtained ZnO:Al films, not only have an average transmittance greater than 90% in the visible region, but also have an optical band gap between 3.33 and 3.47 eV depending on the sputtering parameters. Moreover, a low value of the electrical resistivity (~ 1.25 × 10^− 3 Ω cm) was obtained for the film deposited at 200 W and 2 × 10^− 3 mbar.     

溅射功率对TaN薄膜电阻电性能的影响

本文利用直流反应磁控溅射技术,通过调节溅射功率于200℃、3％的氮分压条件在Al2O3基片上沉积了一系列TaN薄膜,并使用光刻工艺制备出相应的TaN薄膜电阻,研究了溅射功率对TaN薄膜电阻率、电阻温度系数（TCR）和功率容量的影响。实验结果表明：当溅射功率从200W增大到1000W,TaN薄膜电阻率逐渐减小,TCR绝对值从几百ppm／℃降为几十ppm／℃,功率容量呈现逐渐增大趋势。     

Influences of process parameters on texture and microstructure of NiO films

The experimental result shows that the preferred orientations of NiO thin films are closely related to the working pressure of argon. All of NiO(111), NiO(200), and NiO(220) diffraction peaks are observed in the XRD patterns and exhibited random orientation of NiO film when the film is deposited in low Ar pressure of 0.67 Pa. As the Ar pressure is increased to 2.67 Pa, only the NiO(200) peak appears and shows (200)-textured NiO films. However, the lattice parameter of NiO film deposited in high Ar pressure of 2.67 Pa is 0.426 nm, which is much larger than that of the NiO bulk (0.417 nm). The lattice parameter can be reduced by post-annealing the film because the interstitial Ar atoms are released from the NiO lattice, decreasing continuously from 0.423 to 0.417 nm as the NiO films are annealed by rapid thermal annealing (RTA) from 300 to 600 °C.