基于UC3863控制的LLC谐振变换器的设计及仿真

设计了一种以UC3863芯片为核心控制芯片的开关电源,其电路采用半桥结构的LLC谐振电路,带有PFC电路,且整个电路设计有自限流功能。分析了LLC谐振变换器整个电路的工作原理及自限流功能的实现。结合交流220 V输入1KW输出电路,分别对PFC电路和主电路进行仿真,仿真结果验证了该设计的可行性。     

LED负载LLC谐振变换器参数设计

由于LED负载的等效电阻具有可变的特性,传统的电阻负载LLC谐振电路参数设计方法不再适用于LED负载LLC谐振电路参数设计.在电阻负载LLC谐振电路参数设计的基础上,提出一种新的设计方法,使LLC谐振电路在LED负载正常工作范围内满足零电压开关(ZVS);介绍了详细的公式推导和设计过程.基于所提出的方法,以一个谐振频率为100 kHz,额定输入电压为400 V的两路LED灯串为例,给出了设计和仿真结果,验证了新设计方法的可行性.     

基于LLC拓扑的微波炉变频电源的设计与仿真

本文设计了一个以LLC谐振变换器为主电路,输出端采用倍压整流,L6599芯片为控制核心的功率可调高压变频微波炉电源。运用基波分析法推导出变换器的直流增益,利用MATLAB软件绘出了直流增益曲线,以此讨论了各参数对LLC谐振变换器的影响,优化各参数的设计。最后利用PSPICE软件对设计的微波炉电源主电路进行了仿真,设计并制作了一台电源样机,验证了设计的正确性和可行性。     

负载并联LLC变换器的研究

随着电子产品越来越趋于高频化、模块化和集成化,小体积和高效性及低电磁干扰（EMI）成为研究的主要课题。因此,LLC变换器在高频开关电源领域得到快速的发展应用。为了提高电路的功率转换效率,文中设计了负载并联变换器。单一的输出负载浪费了电路的转换功率,而负载并联LLC变换器通过负载输出模块的并联,大大提高了电路的功率效率。通过Saber和Simplorer仿真软件进行仿真,得出该LLC变换器在不同负载和输入电压变化的情况下,能保持稳定的输出特性和良好的调节功能,而且开关管和二极管可以实现相应的ZVS和ZCS,验证了理论的正确和可行性。     

半桥型LLC变换器稳态建模与参数设计

本文介绍了LLC型谐振变换器的主电路结构和工作原理。通过基波分析法对半桥型LLC谐振变换器进行稳态建模分析,得出了谐振腔的等效电路和直流增益表达式。基于稳态模型的基础上,给出了半桥型LLC谐振电容、谐振电感和励磁电感的设计方法。最后通过saber仿真验证了半桥型LLC谐振变换器稳态模型与参数设计方法的正确性。     

基于FPGA+Si8235控制的LLC谐振变换器设计

为了增加LLC谐振变换器控制灵活性,降低驱动电路的损耗,提出了基于FPGA控制和Si8235驱动的方案;分析了LLC谐振变换器的增益特性;对载波调制隔离驱动芯片Si8235的开通和关断时间进行了测试比较,设计加速关断的优化驱动电路;实验证明,LLC谐振变换器使用FPGA+Si8235组合的控制驱动策略,使电路更加简单,能实现更快的驱动速度,提高控制灵活性和增加性能效率。     

数字控制LLC谐振全桥变换器的应用设计

针对模拟电源效率较低的现状,提出一种基于DSP的数字电源方案。在对LLC谐振全桥变换器工作原理简单分析的基础上,采用DSP TMS320F28335设计了一款输入为DC300-400V,输出为DC48V/12A的原理样机,利用Saber仿真软件对其进行仿真与调试,仿真结果与实验数据表明,本文设计的LLC全桥谐振变换器能够在全负载范围内实现初级零电压开通（ZCS）以及次级零电流关断（ZVS）,输出电压纹波小于±0.5%,效率达到95%以上,满足设计要求。结论表明,LLC谐振变换器符合电源高功率密度、高效率的发展要求。     

一种新颖的双模态LLC谐振变换器的分析与设计

为了提高LLC谐振变换器的输入电压适应范围,提出了一种新颖的双模态LLC谐振变换器。所提出变换器的隔离变压器原边绕组中设计有一个辅助抽头,使得变压器具有两种工作变比,对应两种工作模态：低输入电压区模态和高输入电压区模态。通过检测输入电压控制高频开关,使得变换器自动选择适应当前输入电压的工作模态。文中给出了所提出变换器的详细工作原理和换流过程分析。为了避免变换器在设定的输入电压切换点附近因模态连续切换而产生的震荡,提出了一种基于电压滞环和模态保持的模态切换策略。最后,研制了一台300W的实验样机,样机输入电压为25V~60V,控制芯片为TMS320F28335,样机实验结果验证了所提出的双模态LLC谐振变换器及其模态切换策略的可行性。     

一种半桥LLC高压电源设计与实现

设计一种基于半桥LLC谐振变换器的高压电源,其基本结构包括逆变电路、谐振电路、倍压整流电路和反馈控制电路,可用于微波功率模块集成电源。为实现高压电源的高效率,详细分析了半桥LLC谐振电路中场效应管零电压开启的实现条件,并给出了实现该条件所需电路关键参数的计算方法。通过计算机仿真辅助优化电路参数,降低了场效应管和变压器的损耗。最后,研制了一台高压电源原理样机,其输出电压为-3 000 V,满载输出功率为300 W,在245～300 V输入电压范围内效率大于96%,峰值效率为97.5%。     

三种布局的半桥谐振变换器的分析研究

驱动电路的设计是LED照明设备中的核心部分,驱动电路的好坏直接影响到了光源是否高效节能工作。而基于不对称式半桥谐振变换器设计的驱动电路在大功率LED中应用较多,本文即针对不对称式半桥谐振变换器进行了分析,横向对比SRC、PRC、LLC谐振变换器后,对性能最好的不对称式半桥LLC谐振变换器做仿真分析,获得了相关计算数据,验证了LLC不对称式半桥谐振器具有优良性能,并提出了优化方法。     

Design of a 1-MHz LLC Resonant Converter Based on a DSP-Driven SOI Half-Bridge Power MOS Module

In this paper, the design of a 1-MHz LLC resonant converter prototype is presented. Aiming to provide an integrated solution of the resonant converter, a half-bridge (HB) power metal oxide semiconductor (MOS) module employing silicon-on-insulator technology has been designed. Such a technology, which is suitable for high-voltage and high-frequency applications, allows enabling HB power MOSFET modules operating up to 3MHz with a rated voltage of 400V. The power device integrates the driving stages of the high-side and low-side switch along with a latch circuit used to implement over-voltage/over-current protection. The module has been designed to be driven by a digital signal processor device, which has been adopted to perform frequency modulation of the resonant converter. By this way, output voltage regulation against variations from light- to full-loaded conditions has been achieved. The issues related to the transformer design of the LLC resonant converter are discussed, too. Owing to the high switching frequency experienced by the converter, 3F4 ferrite cores have been selected for their low magnetic power losses between 0.5 and 3 MHz and core temperatures up to 120degC. The resonant converter has been designed to operate in an input voltage range of 300-400V with an output voltage of 12V and a maximum output power of 120W. Within these design specifications, a performance analysis of the LLC converter has been conducted, comparing the results obtained at the switching frequencies of 500kHz and 1MHz. A suitable model of the LLC resonant converter has been developed to aid the prototype design.     

Analysis and implementation of a dual-output LLC resonant converter

This article analyses and presents an LLC resonant converter with a high power factor for LCD-TV applications. It integrates the advantages of power factor correction and the LLC resonant converter. It can improve not only power quality but also circuit efficiency. Since the power factor corrector is used in the first stage of the LLC resonant converter, it is suitable for wide input voltage range application. On the basis of the resonant behaviour, zero voltage switching is achieved for the power switches and ZCS is achieved for the rectifier diodes. An experimental prototype of 90–260V _rms input and 12V/10A and ?12V/10A outputs with 92.6% efficiency for 32″ LCD-TV application is built in the laboratory to verify the operation principle of the adopted converter.     

大功率LED驱动谐振电路设计

通过分析对比大功率LED驱动电路的拓扑结构,采用LLC谐振拓扑,提出了一种适用于宽范围恒流输出的设计方法,并进行了效率优化。LLC半桥谐振变换器可在全负载范围内实现功率开关管的零电压开通（ZVS）和整流二极管的零电流关断（ZCS）,以此减小开关损耗。并且采用基波近似方法分析LLC谐振变换器,通过交流等效电路,导出了归一化直流增益曲线,讨论了半桥LLC的三种主要工作方式,以及对应的三个工作区间,分析了每个工作区间的特点和应用场合。     

Smart Internet of Things (IOT) System for Performance Improvement of Dual Bridge LLC Resonant Converter by Using Sophisticated Distribution Control Method (SDC)

A resonant converter is a kind of electric power converter that contains a system of inductors and capacitors called a resonant tank, tuned to resonate at a particular frequency in this work recommends a better-quality dual bridge LLC resonant converter with a novel controller technique. The resonant converters include the serial or parallel connections of inductors and capacitors to activate the switch to realize the Zero Current Switching (ZCS) and Zero Volt Switching (ZVS) under resonance conditions. The resonant effects are switching sufferers, turning strain and electromagnetic interference problems the switching resonant converter controls the output voltage through changing frequency and generally can be sub classified in ZCS converter and ZVS converter. This scheme had combined wireless monitoring for dual bridge LLC resonant converter for dc distribution applications based on sophisticated distribution controller (SDC) through the internet of things and embedded structure access and other mechanisms. The consequence of our exhibition demonstrates that the framework can monitor and store the manipulate data from the converter. Thus, the wireless monitoring functions are realized in real-time. This converter permits both forward and reverses power exchange between the source and the load, to keep up the output voltage consistent, regardless of load and line unsettling influences, it is important to work the converter as a closed loop system. The proposed SDC based dual bridge resonant converter has validated through simulation in Matlab Simulink environment. A hardware setup is also developed to validate the simulation. General 97% effectiveness accomplished at full load condition in light of the dual bridge resonant converter.     

基于模块化多电平拓扑的谐振变换器设计

在海洋科学研究和海洋观测领域中,水下系统的供电方式大多是岸基负高压传输到海底接驳设备。海底接驳设备中的功率变换器将岸基电源的数千伏至十几千伏的直流高压转换成低压375 V供海底设备供电。针对变换器高电压输入、宽电压范围输入及输入输出电压变比大的技术难点,提出了模块化多电平的LLC谐振变换器拓扑结构,文中对变换器进行了模型搭建和电路仿真,并完成了一台40 kW工程样机的设计,最后根据仿真和实验结果验证了模块化多电平谐振变换器工作原理的正确性及可行性。     

A sub-nanosecond resonant-type monolithic T/R switch formillimeter-wave systems applications

This paper is concerned with the design consideration, fabrication process, and performance of a V-band monolithic transmit/receive (T/R) switch for millimeter-wave wireless networks applications. The developed switch integrated circuit (IC) has a novel structure in which to pass a signal, it presents a parallel resonant circuit to the signal by forward biasing a pair of switching heterojunction FET's (HJFETs), but to block the signal, it presents a series resonant circuit to the signal by reverse biasing the switching HJFETs. With a control voltage of 0/3.2 V, the developed T/R switch exhibits a minimum insertion loss of 3.9 dB, a maximum isolation of 41 dB, and a high switching speed of 250 ps, over 57-61 GHz. The monolithic T/R switch chip size is 3.3 mm×1.7 mm