反应蒸发技术制备高性能In2O3和ITO薄膜

在真空状态下，在两个石英坩埚分别装入纯In，In、Sn（Wt=10％）合金，并按所沉积膜的种类（In2O3或ITO）将某一石英坩埚装入加热器，当真空度达到要求后，通入氧气并开启加热器，可在玻璃基板上制备In2O3或ITO薄膜。制备的ITO薄膜的方块电阻为10Ω/□，可见光平均透过率≥90％，制备的In2O3薄膜的方块电阻为35Ω/□，可见光平均透过率≥90％。是太阳能光伏产品及显示器件导电膜的理想选择。     

柔性衬底ITO薄膜的制备及其光电性能研究

在室温下,采用直流反应磁控溅射法,在聚酯薄膜（PEP）衬底上镀制了高性能的ITO薄膜。为了提高薄膜与基底的结合力,溅射前采用多弧离子源对PEP表面进行了等离子体清洗。研究了溅射工艺参数对ITO薄膜的光电性能和红外发射率的影响规律,探讨了ITO膜的透光和导电机理,并分析了方块电阻与红外发射率的相互关系。实验结果表明,通过等离子体清洗,ITO薄膜的结合力和光电性能都得到了改善。ITO薄膜的红外发射率和方块电阻受制备条件的影响规律具有相似之处,红外发射率随薄膜方块电阻的增大而呈增加的趋势。     

电弧气化法制备纳米ITO粉末及高密度ITO靶的研制

以纯度为99．99％的纯金属In和Sn为原料,采用电弧气化法制备了单一立方In2O3结构的纳米ITO合金粉末,所制备的粉末以四方和类球形两种形貌存在,粒度主要位于30-70nm,分散性良好;并在此基础上采用常压烧结制备了相对密度高达99．74％,平均电阻率达到1．52×10^-4Ω·cm,结构成份均匀,晶粒尺寸5—10μm左右的超高密度ITO靶材。     

制备ITO靶材的探索

ITO的用途越来越广泛.研究并且制备ITO靶材具有相当的战略意义.本文概述了ITO玻璃的用途和ITO膜的镀制方法,对目前国内ITO靶材加工和研究的现状进行了调查,提出了用爆炸方法压实ITO纳米粉末并附加烧结的工艺生产靶材的途径.借助粉末的压实理论,对粉末的爆炸压实进行了理论探索.并通过初步实验证实了爆炸法的可行性.     

电子束低温蒸发ITO膜增透、增反特性研究

本实验是在低温条件下，采用电子柬蒸发制备ITO透明导电薄膜，通过监测电阻来控制薄膜的厚度，通过控制薄膜厚度研究了增透和增反两种效果的ITO膜的制备及膜的光学特性。当膜厚达170nm和83nm时透过率和反射率可达95％和6％。     

低温直流磁控溅射制备ITO薄膜工艺研究

采用低温直流磁控溅射法针对附有有机聚合物玻璃磁控镀制ITO薄膜,通过四探针、紫外可见分光亮度计对样品进行表征,研究了基底温度、溅射功率对ITO薄膜光电性能影响,试验表明:在附有有机聚合物的玻璃上低温直流磁控溅射法制备ITO薄膜,随着基底温度的增加方块电阻先下降后增加,透过率先增加后略微减少;随着溅射功率的增加,薄膜方块电阻减少,透过率降低。     

溶胶-凝胶法制备ITO薄膜研究进展

概述了近年来国内外溶胶-凝胶法(Sol-Gel)制备ITO薄膜的研究状况,对Sol-Gel法制备ITO薄膜工艺做了简要介绍,重点讨论了Sol-Gel法制备ITO薄膜的溶胶体系,分析比较了有机醇盐、无机盐以及掺入ITO粉末方法体系的优缺点,最后讨论了甩膜法、提拉法及平铺法在Sol-Gel法制备ITO薄膜中镀膜的应用.指出Sol-Gel法是一种高效可行的制备ITO薄膜的方法,有着广阔的应用前景.     

ITO用作铁电薄膜电极的研究

研究了sol-gel掺锡氧化铟（ITO溶胶在SiO2/Si衬底和光学玻璃衬底上的成膜及结晶性能,并与CVD法生长的ITO薄膜作了对比。结论是：sol-gelITO膜,虽然具有与CVD ITO膜相似的结晶性能和较高的导电性,但以sol-gel ITO膜作下电极,无法使PLT、PZT的sol-gel膜具有明显的结晶取向。因漏电太大,sol-gel ITO也无法作sol-gel铁电膜（如PLT,PZT）的上电极。但在CVD ITO膜上,sol-gel铁电膜能很好结晶,且Au/PLT/ITO电容,具有良好的电学性能。     

退火对溅射沉积ITO膜电学性能的影响

运用直流磁控反应溅射技术在氮气和氧气气氛下，以In（90wt％）－Sn（10wt％）作为靶材，基体处于自然升温状态下沉积ITO膜。在空气中，选用200℃，250℃，300℃，350℃，400℃保温20min，对ITO膜进行退火处理。这里着重研究溅射气氛及退火条件对膜的方块电阻的影响。     

ITO废靶回收制备超细ITO粉末的研究

以ITO废靶为原料,硫酸浸出,均相共沉淀-共沸蒸馏法制备出了均匀分散、粒径小于100nm的类球状高纯纳米级ITO粉体.用本工艺制备回收超细ITO粉末,制备工艺简单,设备投资小,可适用于工业化生产.     

气化粉与湿法粉制备ITO靶材过程及性能对比研究

分别以ITO气化粉和湿法粉为原料,在相同工艺条件下,经过球磨、造粒、成型等工序制备了ITO靶材,研究了ITO气化粉和湿法粉制靶中间品及最终靶材的主要性能。结果表明:模压和CIP后,湿法粉坯体密度均低于气化粉的,但由于ITO湿法粉原料粒径细而均匀,烧结活性更高,故在较低的烧结条件下可制备出更高密度的靶材。     

UV light emitting transparent conducting tin-doped indium oxide (ITO) nanowires

Multifunctional single crystalline tin-doped indium oxide (ITO) nanowires with tuned Sn doping levels are synthesized via a vapor transport method. The Sn concentration in the nanowires can reach 6.4 at.% at a synthesis temperature of 840?°C, significantly exceeding the Sn solubility in ITO bulks grown at comparable temperatures, which we attribute to the unique feature of the vapor-liquid-solid growth. As a promising transparent conducting oxide nanomaterial, layers of these ITO nanowires exhibit a sheet resistance as low as 6.4 Ω/[Symbol: see text] and measurements on individual nanowires give a resistivity of 2.4 × 10(-4) Ω cm with an electron density up to 2.6 × 10(20) cm(-3), while the optical transmittance in the visible regime can reach ～ 80%. Under the ultraviolet excitation the ITO nanowire samples emit blue light, which can be ascribed to transitions related to defect levels. Furthermore, a room temperature ultraviolet light emission is observed in these ITO nanowires for the first time, and the exciton-related radiative process is identified by using temperature-dependent photoluminescence measurements.     

ITO Films Prepared by Long-throw Magnetron Sputtering without Oxygen Partial Pressure

This study has investigated the influence of the radio frequency (rf) power and working pressure on the properties of indium tin oxide (ITO) thin films, which were prepared by long-throw rf magnetron sputtering technique at room temperature. For 200 nm thick ITO films grown at room temperature in pure argon pressure of 0.27 Pa and sputtering power of 40 W, sheet resistance was 26.6 ?/sq. and transmittance was higher than 88% (at wavelength 500 nm). An X-ray diffraction analysis of the samples deposited at r...     

直流磁控溅射功率对ITO薄膜光学性能的影响

本实验的ITO薄膜样品是利用直流磁控溅射技术在玻璃基片上沉积而成的。通过改变溅射功率,研究不同溅射功率对ITO薄膜光学性能的影响。经各实验测试后发现：在实验给定的功率区间内,ITO薄膜的厚度随着溅射功率的增加而增加,其可见光透过率则随之降低。     

烧结温度对多孔道ITO材料结构的影响

采用固相法制备多孔道ITO材料,主要研究了ITO粉末成型压力为93MPa的素坯在不同烧结温度条件下的物相、显微组织、体积收缩率及孔道结构。研究结果表明,93MPa的素坯在600℃保温1h、1300℃保温3h工艺条件下所获得的ITO材料孔道结构较好,孔径较规则且分布均匀;随着烧结温度的升高,ITO材料体积收缩率变大,当温度超过1300℃后,ITO材料颗粒长大明显,导致该材料部分孔道弥合,不利于形成均匀分布的多孔道结构的气敏材料。     

ITO薄膜的制备以及性能的研究

在室温条件下通过直流磁控溅射法在普通玻璃基体上制备了光电性能优良的ITO薄膜。靶材为ITO陶瓷靶,其中In2O3与SnO2的质量比为9∶1。运用UV-2550紫外可见光光度计测量样品的透光率,采用SZT-2四探针测试仪测量样品表面的电阻率,用扫描电镜(SEM)对样品进行表征。研究了溅射压强、溅射功率等参数对薄膜光电性能的影响。研究表明,ITO薄膜的电阻率随着溅射功率的增大而减小,在溅射功率为110W时ITO薄膜的透光率有相对好的数值。溅射压强为1.0Pa时既能保持ITO薄膜低的电阻率又能保证高的透光率。     

Effect of Ag addition on the structural and electrical properties of ITO powder compact

Nanocrystalline ITO-Ag powders were prepared using a coprecipitation method. Surface modified silver nanoparticles were mixed with the indium tin hydroxide precursor before the sintering process. The ITO-Ag nanocomposite powder was formed into pellets by uniaxial pressing process. The effect of addition of silver to the electrical and structural properties of ITO powder compact was studied. The relative density of the metal filled composite ITO-Ag powder compact is higher than the pure ITO powder compact. The result may be attributed to the melted silver eventually fills the void space between agglomerate pores and hence enhances the interconnection between nanocrystalline ITO powders. The crystal phase and particle size of ITO powder and ITO-Ag powder were measured by powder X-ray diffraction and the surface morphology of powder compact was investigated using a scanning electron microscope.     

Grain size control in ITO targets and its effect on electrical and optical properties of deposited ITO films

Tin-doped indium oxide (ITO) ceramic targets with three types of grain size (<10, 10–20 and >20 μm) were prepared by controlling sintering process. It is found that all targets show polycrystalline structure and a rapid heating and short holding time contributes to refining grain size. The ITO films were deposited using these ITO targets with three types of grain sizes under dc and rf mode. The effects of grain size on the structural, electrical and optical properties of the as-deposited films were systematically investigated. The results indicate that all ITO films are the (222) preferred orientation, and the surface grain morphologies are round (dc mode) and triangular (rf mode). The sheet resistance, transmittance and uniformity of the ITO films are significantly impacted by the grain size. The small grain size (<10 μm) contributes to improving the uniformity of electrical and optical properties. The optimal uniformity of sheet resistance under dc and rf mode is about 13 and 10 %, respectively.     

氮化处理对ITO薄膜光电特性影响

利用射频磁控溅射在玻璃衬底上制备了氧化铟锡(ITO)薄膜,分别采用两种方法对薄膜进行氮化处理,即:(1)利用氩气溅射在室温下制备薄膜,随后在氮气和氨气气氛下对薄膜进行热处理;(2)利用氩气/氮气共溅射成膜.利用X射线衍射、霍尔效应、UV-vis-NIR分光光度计等测试手段对薄膜样品进行表征,对比研究了两种氮化处理方法对ITO薄膜光电特性的影响.结果发现对于低温生长的薄膜,两种方法均能明显提高其在可见光区的透过率.氩气/氮气共溅射的方法会降低薄膜的结晶程度,降低载流子浓度,但使得其紫外/可见/近红外光谱发生明显红移;而热处理方法则能增加薄膜的结晶程度,提高其导电能力.