不同裂解升温速率制备的Cf/Si3N4复合材料性能研究

以聚硅氮烷为先驱体，研究先驱体转化过程中不同裂解升温速率对制备3D-BCf/Si3N4复合材料性能的影响。结果表明：随着裂解升温速率的提高，陶瓷基复合材料的力学性能明显提高，以10℃/min裂解升温速率制得的陶瓷基复合材料的弯曲强度达604MPa。     

聚钛碳硅烷先驱体转化法制备3DCf/Si-Ti-C-O复合材料研究

以一种新型先驱体,聚钛碳硅烷(PTC)为原料制备了3D Cf/Si-Ti-C-O材料,考察了其力学性能和抗氧化、抗热震性能.结果表明,PTC在1200℃时裂解的陶瓷产率达到63.37%,材料的弯曲强度和断裂韧性分别达到485.3MPa和19.95MPa·m1/2.在1300℃马弗炉中氧化10min后,材料的弯曲强度为306.2MPa,强度保留率为63.06%.1300℃五次热震试验后的弯曲强度为408.9MPa,强度保留率为85.13%.表明3D Cf/Si-T-C-O材料具有较好的力学性能和抗氧化、抗热震性能,PTC是一种优异的适合制备陶瓷基复合材料的先驱体.     

裂解工艺对先驱体转化制备Cf/SiC材料结构与性能的影响

以聚碳硅烷(PCS)/二乙烯基苯(DVB)为先驱体,经8个周期的反复真空浸渍-交联-裂解处理制备出三维编织碳纤维增强碳化硅(3D-B C_f/SiC)复合材料,考察了裂解工艺对材料结构与性能的影响。结果表明:提高裂解升温速率可以提高材料密度,形成较理想的界面结合,从而提高材料的力学性能。裂解温度对材料性能也有较大的影响,C_f/SiC复合材料在第6个周期采用1600℃ 裂解可以弱化纤维与基体之间的界面,提高材料致密度,材料的力学性能也得到较大改善。裂解升温速率为15℃/min,第6个周期采用1600℃裂解制备的C_f/SiC材料性能较好,弯曲强度达到556.7 MPa。      

热模压辅助先驱体浸渍裂解制备Cf/SiC复合材料研究

以聚碳硅烷为先驱体,采用热模压辅助先驱体浸渍裂解工艺制备3D-B C_f/SiC复合材料,研究了热模压辅助对3D-B C_f/SiC复合材料致密度和力学性能的影响。结果表明:先驱体浸渍裂解制备陶瓷基复合材料第一次浸渍后引入高温热模压工艺可以改善材料微观结构,显著提高材料的致密度和力学性能。其中1600℃,10MPa,1h下热模压辅助先驱体浸渍裂解6次制备的3D-B C_f/SiC复合材料的密度为1.79g/cm3,弯曲强度高达672MPa,断裂韧性达18.9MPa·m1/2,剪切强度接近50MPa,且具有较好的抗热震性和高温抗氧化性。     

先驱体浸渍-裂解法制备SiBN纤维增强SiBN陶瓷基复合材料

连续纤维增强氮化物陶瓷基复合材料是耐高温透波材料的主要发展方向,纤维是目前制约耐高温透波复合材料发展的关键,而SiBN陶瓷纤维是一种兼具耐高温、透波、承载的新型陶瓷纤维。以聚硅氮烷为陶瓷先驱体,以SiBN连续陶瓷纤维为增强体,采用先驱体浸渍-裂解法制备了SiBN陶瓷纤维增强SiBN陶瓷基复合材料,研究了复合材料的热膨胀特性、力学性能、断裂模式以及微观结构。结果表明:SiBN陶瓷纤维增强SiBN陶瓷基复合材料呈现明显的脆性断裂特征,复合材料的弯曲强度和拉伸强度分别为88.52 MPa和6.6 MPa,纤维的力学性能仍有待于提高。     

低分子量聚碳硅烷制备3D-Cf/SiC复合材料

研究了低分子量聚碳硅烷 (PCS) 通过先驱体浸渍裂解 (PIP) 工艺制备C_f/SiC复合材料。分析表明:PCS的数均分子量为400,活性较强,陶瓷化产率为70％左右,在1200℃基本转化为微晶态的β-SiC。分别通过3种不同升温速率制备了3D-C_f/SiC复合材料试样,其弯曲强度分别为745.2MPa、686.7MPa和762.5MPa,明显高于文献报道3D-C_f/SiC复合材料弯曲强度300~500MPa的水平。试样断口的SEM照片均显示长的纤维拔出,有良好的增韧效果,低分子量PCS裂解得到的基体比较致密。实验结果说明,低分子量PCS适合于制备3D-C_f/SiC复合材料,并且提高升温裂解速率对材料性能影响很小。      

聚硅氧烷先驱体转化制备低成本Si—O—C陶瓷基复合材料

研究了廉价聚硅氧烷的交联与裂解情况，并以其为先驱体转化制备Si-O-C陶瓷基复合材料，结果表明，在氯铂酸的催化下，聚硅氧烷与二乙烯基苯可以交联固化，当聚硅氧烷／二乙烯基苯摩尔比为1：0．5时，陶瓷产率达60．52％，经6次浸渍－交－裂解过程制备出碳纤维三维编织物增强陶瓷基复合材料，其密度达到1.59g/cm^3，弯曲强度达到321MPa，断裂韧性达到9.38MPa.m^1/2.     

两种先驱体低温裂解制备石英纤维增强氮化硅复合材料

以全氢聚硅氮烷( PHPS) 和聚甲基硅氮烷( PHMS) 为陶瓷先驱体, 通过循环浸渍和600 ℃低温裂解分别制备了三维石英纤维增强氮化硅复合材料, 对比研究了复合材料的力学性能和微观结构。结果表明: 由PHPS 制备的复合材料密度为1. 83 g/ cm3 , 气孔率10 % , 弯曲强度45. 4 MPa , 材料断口平整, 纤维基体界面结合强; 而由PHMS 制备的复合材料密度仅为1. 66 g/ cm3 , 气孔率16 % , 却具有更高的弯曲强度56. 3 MPa , 材料断面较粗糙,界面结合较弱。先驱体活性不同是导致复合材料界面结合强弱及力学性能不同的主要原因。      

C/SiC复合材料的低温制备工艺研究

陶瓷基复合材料制备温度过高一直是制约其引入主动冷却工艺、突破其本征使用温度的主要原因之一。采用差热(TG-DTA)、红外(IR)、X射线衍射(XRD)等分析测试手段,研究了聚碳硅烷(Polycarbosilane,PCS)的裂解及化学转化过程,从理论上说明了先驱体聚碳硅烷(PCS)低温(1000℃)陶瓷化的可行性。结果表明:聚碳硅烷在750℃实现无机化,880℃开始结晶,即聚碳硅烷在高温合金耐受温度范围(1000℃)内,即可实现陶瓷化。以聚碳硅烷(PCS)为先驱体,炭纤维为增强体,采用先驱体浸渍裂解(PIP)工艺低温制备了炭纤维增强碳化硅(C/SiC)陶瓷基复合材料,当制备温度为900℃时,所制备C/SiC复合材料密度为1.70g/cm3,弯曲强度达到657.8MPa,剪切强度为61.02MPa,断裂韧性为22.53MPa.m1/2,并采用扫描电子显微镜(SEM)对复合材料的微观形貌进行了分析。     

PIP工艺参数对Cf/BN-Si3N4复合材料性能的影响

以自合成的硼吖嗪(borazine)和全氢聚硅氮烷(perhydropolysilazane,PHPS)组成的混杂先驱体为原料,采用先驱体浸渍-裂解(PIP)工艺制备3D Cf/BN Si3N4复合材料,研究了PIP工艺循环次数对复合材料的力学性能和烧蚀性能的影响.结果表明,随着循环次数的增加,复合材料的基体逐渐致密,材料的密度随之提高,材料的弯曲强度和杨氏模量随之提高.进行四个循环时,密度达到1.50 g·cm-3,弯曲强度达到156.4 MPa,杨氏模量达到45.9 GPa.力学性能的增长规律与密度变化相一致.线烧蚀率随着致密度的提高而迅速下降.     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Optimization of the thickness of glass/TiO2/Ag/Ti/TiO2/SiON multilayer film

The TiO₂/Ag/Ti/TiO₂/SiON multilayer film was deposited on glass substrate at room temperature using magnetron sputtering method. By varying the thickness of each layer, the optical property was optimized to achieve good selective spectral filtering performance in Vis-NIR region. The multilayer film achieves maximum transmittance of 92.7% at 690 nm, in which the both TiO₂ layers are 33 nm. For good conductivity and transmittance, a 4 nm Ti layer and a 30 nm SiON layer are necessary.     

Effect of pressure onTc in La2-xBaxCuO4 withx=0.125

The superconducting transition temperature,T _c , of La_2–x Ba _x CuO₄ has been measured under high pressure up to 8 GPa.T _c is found to change drastically at the pressure where the structural phase transition takes place. This finding clearly indicates that there exists an intimate relation between the crystal structure and superconductivity.     

t-Model mechanism of high-Tc cuprates

A doublon formalism ofd-p model Hubbard Hamiltonian is studied only with transfer integrals, and without the superexchange term. This gives excellent doping-dependent features ofT _c in high-T _c cuprates.     

Properties of CdxPb1−xTe thin films

Thin films of Cd_xPb_1?xTe have been grown on mica substrates using a flash evaporation technique and isothermal substrate heaters. The Cd concentration of the films was found to increase with decreasing substrate temperature and increasing deposition rates. The Hall coefficient changed from positive to negative with increasing substrate temperature, as did the Seebeck coefficient. Both these changes were associated with an increase in the rate of re-evaporation of Te and an improvement in the crystallinity of the films. Carrier mobilities less than bulk values were obtained; scattering mechanisms are discussed.     

Influence of Sm2Ba4CuBiOy phase content on Jc of SmBa2Cu3O7/Sm2Ba4CuBiOy nano-composites

Presence of various nano-scale Y₂Ba₄CuMO_y phase inclusions in YBa₂Cu₃O_7−δ phase matrix are shown to improve magnetic flux pinning over wide range of magnetic fields. We first fabricate single phase of Sm₂Ba₄CuBiO_y (Sm-2411) using a solid-state reaction and then introduced them into SmBCO single grains. Top seeded melt growth (TSMG) has been used to grow SmBCO single grains in air atmosphere. A significant improvement in J_c is observed, over wide magnetic fields, for single grains containing Sm-2411nano-phase inclusions when compared to that of SmBa₂Cu₃O_7−δ/Sm₂BaCuO₅ composites. When compared to YBCO nano-composites, SmBCO composites are shown to exhibit high J_c at medium range of magnetic fields (1–2 T) at 77 K.