MoO3/Mo混合预压制粒制备粗钼粉

介绍一种粗钼粉的制备方式。在钼粉中加入一定比例的氧化钼粉和水,经预压制粒、氢气保护气氛下还原烧结、分级处理,制备出粗钼粉。     

Ultrathin CdTe Solar Cells with MoO3−x /Au Back Contacts

We report on the fabrication and characterization of CdTe thin-film solar cells with Cu-free MoO_3?x /Au back contacts. CdTe solar cells with sputtered CdTe absorbers of thicknesses from 0.5 to 1.75 μm were fabricated on Pilkington SnO₂:F/SnO₂-coated soda–lime glasses coated with a 60- to 80-nm sputtered CdS layer. The MoO_3?x /Au back contact layers were deposited by thermal evaporation. The incorporation of MoO_3?x layer was found to improve the open circuit voltage (V _OC) but reduce the fill factor of the ultrathin CdTe cells. The V _OC was found to increase as the CdTe thickness increased.     

MoO3纳米带在外场作用下的相变

本文研究了电子束辐照和加热条件下正交相MoO3的相变.利用透射电子显微学研究表明:(1)电子束辐照使MoO3相变生成具有面心立方结构的MoO,两相之间取向关系为[010]MoO3//[010]MoO,(200)MoO3//(200)MoO;(2)MoO3在873 K时相变生成单斜相的MoO2,在相变产物中首次发现了具有(011)孪晶的MoO2纳米颗粒.研究结果使之对MoO3在不同环境下的相变有了更深入的了解.     

β-BZT陶瓷中添加MoO3及气氛烧结

研究了添加低熔点氧化物MoO3及N2/空气/O2气氛烧结对微波介质陶瓷Bi2(Zn1/3Nb2/3)2O7(β-BZT)的结构和介电性能的影响.结果表明,烧结温度可降低100 ℃;样品的介电常数和品质因数随添加量增多而下降;掺杂MoO3的质量分数小于1%,样品均致密、显微形貌较好;MoO3添加量为0.05%时样品的介电常数约65,电容温度系数仅76×10-6/℃,品质因数值可达943;氧分压对样品的显微形貌和介电性能也有影响.     

电子束蒸发制备MoO3薄膜及其电致变色特性

在三种条件下采用电子束蒸发方法制备钼氧化物薄膜。从烧结靶淀积出的薄膜为多晶状态；从粉末压结靶淀积出非晶态薄膜。在ＬｉＣｌＯ４－ＰＣ电解质中测试各种薄膜的循环伏安特性和阶跃电压下的电流响应和光透射响应，表明２．５×１０＾－２Ｐａ氧分压下压结靶淀积的薄膜具有较好的电色性能；ＸＰＳ分析该种薄膜为ＭｏＯ３组份，Ｌｉ＾＋注入使Ｍｏ３ｄ和Ｏ１ａ的结合能降低。     

Al/MoO3 阳极薄膜：一种有效高性能的柔性有机光电子的阳极结构

在本文中,我们报导了一种Al/MoO3复合阳极结构的高性能OLEDs。发现该结构器件的独特效率是由于在阳极/有机界面上的界面偶极子有很大的下降,从而导致空穴注入到常用的空穴传输分子上能力得到增强。强微腔作用进一步增强了电致发光强度,同时由于Al/MoO3易于加工,我们成功的在朔料基板上研制出发光均匀的大面积柔性OLEDs。     

K0．3MoO3电子辐照下有序一无序转变及恢复

准一维K0．3MoO3蓝青铜中的电荷密度波(CDW)失稳一直是凝聚态物理研究的热点之一。在180K温度附近K0．3MoO3发生晶格畸变伴随着电荷发生空间周期性调制，形成所谓的CDW。当调制波矢量q=2Kr时，布里渊区将与费米面套叠而打开一个Peierls能隙，导致体系从导体向半导体或绝     

MoO3掺杂对BiNbO4陶瓷微波介电性能的影响

采用固相反应法,研究了MoO3掺杂对BiNbO4陶瓷微结构、烧结特性和微波介电性能的影响。对相对介电常数εr和品质因数Q随烧结温度的变化以及谐振频率温度系数随MoO3掺杂量的变化也进行了研究。MoO3的掺杂量x低于0.05时,实现了BiNbO4陶瓷在970℃以下的低温烧结,并且相转变温度也降低了约60℃。通过对εr以及介质损耗随温度的变化特性的研究,证实了缺陷偶极子对材料介电性能的影响。     

K0.3MoO3电子辐照下有序-无序转变及恢复

准一维K0.3MoO3蓝青铜中的电荷密度波(CDW)失稳一直是凝聚态物理研究的热点之一.在180K温度附近K0.3MoO3发生晶格畸变伴随着电荷发生空间周期性调制,形成所谓的CDW.当调制波矢量q=2KF时,布里渊区将与费米面套叠而打开一个Peierls能隙,导致体系从导体向半导体或绝缘体的转变,即Peierls相变.Peierls失稳是低维系统的特有行为,具有强烈的维度依赖性,非常敏感于元素掺杂和各种机制产生的缺陷.电子辐照产生的结构变化对于CDW材料的Peierls相变温度和Peierls能隙的形成有很强的影响,强的电子辐照使Peierls相变温度下降.且随着辐照剂量的增大,Peierls能隙甚至被抹平.     

Photoluminescence properties of solid-state Tb^3＋ doped NaY（MoO4）2

A series of Tb^3＋ doped Na Y（Mo O4）2 are synthesized by a solid-state reaction at 550 °C for 4 h, and their luminescent properties are investigated. The phase formation is carried out with X-ray powder diffraction analysis, and there is no other crystalline phase except Na Y（Mo O4）2. Na Y（Mo O4）2：Tb^3＋ can produce the green emission under 290 nm radiation excitation, and the luminescence emission peak at 545 nm corresponds to the 5D4→7F5 transition of Tb^3＋. The emission intensity of Tb^3＋ in Na Y（Mo O4）2 is enhanced with the increase of Tb^3＋ concentration, and there is no concentration quenching effect. The phenomena are proved by the decay curves of Tb^3＋. Moreover, the Commission International de I＇Eclairage（CIE） chromaticity coordinates of Na Y（Mo O4）2：Tb^3＋ locate in the green region.     

利用MoO3为电极修饰层的F16CuPc/ CuPc异质结的双极性有机场效应晶体管

在本文中,我们利用钛青铜(CuPc)和氟化钛青铜(F16CuPc)作为空穴传输层和电子传输层的制备了具有异质结结构的有机场效应晶体管(OFETs)。与单层的F16CuPc晶体管相比,异质结结构的晶体管的电子迁移率从3.1×10-3cm2/Vs提高至8.7×10-3cm2/vs,然而,空穴的传输行为却没有被观测到。为了提高空穴的注入能力,我们利用MoO3对源-漏电极进行了修饰,有效地改善了空穴注入。并进一步证实了MoO3的引入使得器件的接触电阻变小,平衡了电子和空穴的注入,从而最终实现了器件的双极性传输。     

C545T对Al／MoO3复合阳极OLED性能的影响

制备了以Al／MoO3为复合阳极的有机电致发光器件,其结构为：Al／MoO3／NPB／Alq3：C545T（x%）／Alq3／LiF／Al。比较了不同掺杂浓度条件下OLED器件的电致发光特性。当C545T掺杂浓度为8％时,主客体间的能量转移最充分,器件的启亮电压为2．75V,器件在13V时获得最高亮度为27000cd／m^2,发光效率为6．97cd／A。用Fowler—Nordheim隧道效应理论和载流子注入机制,分析了以Al／MoO3为复合阳极的OLED器件性能。     

Li+掺杂MoO3薄膜的制备与电致-光致变色特性研究

采用过氧溶胶－凝胶法在室温下制备了具有电致变色和光致变色特性的10mol%Li掺杂MoO3薄膜。对薄膜循环安特性和光学特性的测试结果表明，经120℃处理的Li^ 掺杂MoO3薄膜具有良好的电化学性能及电致变色性能。采用Raman光谱对Li^ 掺杂MoO3薄膜光变色前后结构的分析表明，薄膜经紫外光照后结构进行了重组，有序性增强，且吸收光谱研究表明薄膜具有较好的光致变色特性。     

MoO3–Au composite interfacial layer for high efficiency and air-stable organic solar cells

Efficient and stable polymer bulk-heterojunction solar cells based on regioregular poly(3-hexylthiophene):[6,6]-phenyl-C₆₁-butyric acid methyl ester (P3HT:PC₆₁BM) blend active layer have been fabricated with a MoO₃–Au co-evaporation composite film as the anode interfacial layer (AIL). The optical and electrical properties of the composite MoO₃–Au film can be tuned by altering the concentration of Au. A composite film with 30% (weight ratio) Au was used as the AIL and showed a better performance than both pure MoO₃ and PEDOT:PSS as AIL. The surface morphology of the MoO₃–Au composite film was investigated by atomic force microscopy (AFM) and showed that the originally rough ITO substrate became smooth after depositing the composite film, with the root mean square roughness (RMS) decreased from 4.08 nm to 1.81 nm. The smooth surface reduced the bias-dependent carrier recombination, resulting in a large shunt resistance and thus improving the fill factor and efficiency of the devices. Additionally, the air stability of devices with different AILs (MoO₃–Au composite, MoO₃ and PEDOT:PSS) were studied and it was found that the MoO₃–Au composite layer remarkably improved the stability of the solar cells with shelf life-time enhanced by more than 3 and 40 times compared with pure MoO₃ layer and PEDOT:PSS layer, respectively. We argue that the stability improvement might be related with the defect states in MoO₃ component.     

CH3NH3PbI3和CH3NH3MnI3的电子结构和光学性质研究

采用第一性原理计算,研究了有机金属卤化物钙钛矿CH₃NH₃PbI₃和CH₃NH₃MnI₃的电子结构、磁性和光吸收。CH₃NH₃PbI₃和CH₃NH₃MnI₃都是具有直接带隙半导体,CH₃NH₃MnI₃磁基态为G型反铁磁序(G-AFM)。CH₃NH₃MnI₃在G-AFM状态下的带隙值为1.668 eV;当系统处于FM态时,多数自旋通道的带隙为0.696 eV,少数自旋通道的带隙为2.148 eV。结果表明,具有FM态的CH₃NH₃MnI₃的光激发电子将迅速熔化局域磁序。最后计算了CH₃NH₃PbI₃和CH₃NH₃MnI₃的光学特性,结果表明具有铁磁态的CH₃NH₃MnI₃(FM)表现出较强的红外光吸收。     

MoO3掺杂Ba0.98Bi0.02(Ti0.9Zr0.1)O3陶瓷的介电性能研究

采用固相反应法制备了Ba<,0.98>Bi<,0.02>(Ti<,0.9>Zr<,0.1>)<,1-x>Mo<,x>O<,3>(x=0,0.01,0.03,0.05)陶瓷,研究了MoO<,3>掺杂对Ba<,0.98>Bi<,0.02>(Ti<,0.9>Zr<,0.1>)O<,3>陶瓷的相结构、表面形貌和介电性能的影响....     

T3/E3/STS-1光纤扩展

引言 典型的T3/E3/STS-1信号是在短距离内传输,然而,一些应用要求更长的距离.T3/E3/STS-1光纤/铜线变换器把铜线上的信号变换为在光纤链路传输的光纤信号.一对变换器能扩展T3/E3/STS-1信号使其优于铜线性能指标,所用的T3/E3/STS-1信号突破楼宇内的长度限制.T3信号标准长度连接是380米,E3信号长度连接为440米,STS-1标准信号长度连接是360米,而光纤连接可达到几英里.然而,对于在光纤中传输T3/E3/STS-1信号,没有标准.典型的设计包括采用SC或ST连接器和不同波长(如850nm,1310nm和1550nm)的单模或多模光纤.光束波长将决定工程师是否需要增强光元件设计来满足终端用户的应用.