高功率脉冲电子束溅射法制备钴-钛多层膜

本文介绍一种利用高功率脉冲电子束溅射法制备金属多层膜的新方法。强脉冲电子束轰击金属靶将产生瞬态高温等离子体,从这种等离子体中飞出的金属离子沉积在附近的衬底上,从而制得Co/Ti系和其他多种金属多层膜。本文报道了对多层膜进行的TEM和AES研究的结果。     

强流脉冲电子束轰击作用下的扩散模型及其数值计算

在温度场和应力场计算的基础上建立了强流脉冲电子束轰击作用下的扩散模型,并给出了数值方法及其数值解。该模型与方法同样适用于其它高能束流作用下的扩散过程。计算表明,浓度扩散流仍然是影响扩散的主要因素;而轰击超过一定次数后,扩散的作用将减弱;当边界条件为表面扩散时,扩散进行较快,这是表面涂覆加脉冲电子束后处理快速表面合金化工艺的理论基础。对实验结果和理论结果的对比分析表明,在脉冲轰击下,扩散激活能随空位浓度的增加而下降,从而加速扩散过程;在表面有熔化的情况下,则液态时的对流混合作用是主导因素。     

强流脉冲电子束轰击对单晶Si表面形貌的影响

用强流脉冲电子束技术对两种取向的单晶Si片进行了表面轰击,对电子束诱发的表面形貌进行了分析.实验结果表明,当能量密度～3 J/cm2时,轰击表面开始形成大量的熔坑.能量密度～4 J/cm2时,表面开始出现微裂纹,微裂纹的形态与单晶Si的晶体取向密切相关;强流脉冲电子束轰击能够诱发表层强烈的塑性变形,[111]取向单晶Si表面出现剪切带结构,而[001]取向单晶Si表面变形结构则以微条带为主;此外,变形区域内还出现大量<100 nm的微孔洞形貌,这些微孔洞的形成为制备表面多孔材料提供了可能.     

多束脉冲作用下韧致辐射转换靶照射量模拟

20MeV的强流脉冲电子束经加速聚焦后轰击韧致辐射转换靶,在产生脉冲X光的同时将大量能量沉积在靶内,导致靶材迅速膨胀飞散。在多个束脉冲作用下,后续脉冲由于靶材密度的降低可能无法产生足够的X光照射量。本文采用Monte-Carlo软件MCNP以及流体动力学软件ANSYSAUTODYN对靶材的动力学响应以及各脉冲所能产生的照射量进行了数值模拟,结果表明,在3个间隔500ns的20MeV、2kA、70ns、束斑1.5mm（FWHM）的电子束脉冲作用下,X光照射量无明显降低。     

激光驱动飞秒电子束消色差传输束线设计

激光等离子体加速输出的电子束具有fs量级脉冲长度的优异品质。由于强激光场的存在，直接应用存在一定困难，更多应用场景需要把电子束传输到应用端。能散导致电子束在传输中产生能量啁啾，需要通过束流光学设计抑制脉冲长度的增长。通过对电子束在消色差束线中传输的研究，探索了消色差和非消色差传输中脉冲长度压缩的差异，以及消色差束线中偏转角度、偏转半径对不同能量电子束脉冲长度压缩的影响。针对消色差传输中仅有某个能量电子束得到最优压缩的局限，利用四极透镜磁场梯度的调节使电子束的传输适度偏离消色差，改变对能量啁啾的影响，实现在固定尺寸束线中不同能量电子束的压缩。     

强流脉冲电子束表面处理对金属材料表层显微硬度的影响

强流脉冲电子束(HCPEB)是一种新型高效的材料表面处理手段.本文研究HCPEB处理对模具钢D2、金属间化合物Fe-40Al及镁合金AZ31和AZ91表层显微硬度的影响.HCPEB辐照引发极端温度应力复合作用,处理材料表层的显微硬度变化深度远超过热影响区范围,形成深层改性效果,实现材料表层强化处理.     

北京脉冲低能正电子束流装置研究

脉冲低能正电子束流主要利用慢正电子束流的单色性及能量连续可调等特点研究缺陷在材料表面或近表面不同深度的分布信息。脉冲低能正电子束流利用微束团化装置获得起始时间信号。微束团化系统由斩波器、预聚束器、聚束器构成，可将随时间连续分布的慢正电子束流转化为频率为37．4725MHz、脉冲宽度200-300ps的脉冲束流。聚束器为2／4N轴谐振器，谐振频率为149．89MHz，     

利用2TW激光器产生具有超小归一化发散角的准单能电子束团的实验和模拟研究

利用2TW、80fs激光脉冲和等离子体相互作用,产生了能量为(23.0±0.8)MeV、电量为6pC的准单能电子束。该电子束的归一化发散角只有92mrad,较之前激光等离子体加速领域所获得的实验结果至少小了5倍以上。二维数值模拟结果显示,此结果的产生归功于加速机制上从自调制激光尾场加速向激光尾场加速的平稳过渡。     

钛离子注入9Cr18钢的强流脉冲电子束后处理

对９Ｃｒ１８钢经Ｔｉ＾＋离子注入后又使用脉冲强流电子束进行了表面辐照处理用ＡＥＳ分析了注入层的成分，考查了电子束处理前后的硬度，并讨论了脉冲强流电子对离子注入金属材料表面成分产生辐照增强扩散的影响。     

15 TW激光与氮气作用产生稳定电子束的实验研究

利用15 TW激光脉冲,系统研究了基于电离化注入的激光尾波场加速。实验中,研究了等离子体密度、相互作用位置、激光脉宽以及激光能量对电子束的电荷量、发散角、指向性、能量以及产生概率的影响。将约400 mJ、25 fs的激光脉冲聚焦在喷嘴前沿,等离子体密度约9×10~(18) cm~(-3)时,电子的产生概率高达100%,获得了水平(竖直)发散角(6.5±0.5) mrad((5.3±0.3) mrad)、水平(竖直)指向稳定性±1.2 mrad(±0.7 mrad)、峰值能量(135±8) MeV和电荷量(13.5±2.0) pC(50 MeV)的稳定电子束,为其应用奠定了基础。     

纳秒级强脉冲电子束与Ar~＋离子束辐照作物种子后自由基产额的变化

应用多极板放电室产生的纳秒级强脉冲电子束与Ａｒ~＋离子束辐照蕃茄、黄瓜、辣椒和小麦的种子，分别测定辐照种子中的自由基产额，统计胚根根尖细胞中的染色体畸变频率和种子的萌发能力，藉以比较两种不同脉冲处理的辐照效果。实验发现：辐照处理时间的长短与自由基产额、染色体畸变率以及种子的萌发能力密切相关。辐照处理时间长，自由基产额高，染色体畸变率高，萌发生长能力低。四种作物种子的重复实验证明，电子脉冲的辐射效应明显强于Ａｒ~＋离子脉冲。     

强流脉冲离子束辐照对钛合金显微组织的影响

为研究强流辐照过程中钛合金微观组织结构和化学成分的变化,利用束流成分70%H+和30%C+的混合强脉冲离子束对钛合金进行了表面轰击,对离子束诱发的显微组织形貌和化学成分在扫描电子显微镜(SEM)上进行分析。结果表明,钛合金内部组织由α和β两相构成,为α+β型两相钛合金。试样不同区域组织类型存在明显差异,大部分区域组织类型一致,局部区域属于典型的魏氏组织。强流辐照钛合金表层组织和微观结构发生一定的变化,边缘β相结构遭到一定程度的破坏。显微组织结构的变化是由于表层温度梯度引起的热应力及其在靶材体内的传播造成的。     

计算脉冲电子束辐照下能量沉积剖面的新方案

脉冲电子束辐照材料试验研究中,束流电子具有不同的速度和角度分布。但数值模拟计算一般都考虑电子束垂直入射靶材料,这可能导致数值计算结果与试验结果不符。针对该问题,提出了一种计算电子束辐照下能量沉积剖面的新方案,利用MCNP(Monte Carlo N Particle Transport Code)软件对铝、铜、钽金属材料在电子束辐照下的能量沉积进行模拟,分析了电子束垂直入射与带有角度分布入射时能量沉积的差异,为解释电子束辐照试验测量数据与理论计算结果之间的差异提供了依据。     

A Numerical Study of Cracks Appearance on Tungsten Surface After High Intense Pulsed Ion Beam Irradiation

Due to the outstanding physical properties, Tungsten has been proposed for use in the divertor of future fusion devices. However, tungsten shall face strong particle bombardment from the plasma, which causes severe damage to the material. The purpose of this work is to build such an accurate analytical model which can predict the damages in target material like crack production and propagation after high intense pulsed ion beam irradiation. Hence, a two-dimensional finite element method is used to study the effect of high intense pulsed ion beam on tungsten surface numerically. To judge temperature and stress distribution in material, thermal conduction model is combined with non-linear fracture mechanics model and J-Integral parameter is used as a criterion to judge the crack propagation. Simulation results reveal that different crack heights and sizes can affect the results and there is a critical depth for crack propagation. The model gives good results to real experimental observations and has potential applications for different intense pulsed electron/plasma beams and different target materials as well.     

Simulation of a low energy beam transport line

A 2.45 GHz electron cyclotron resonance intense proton source and a low energy beam transport line with dual-Glaser lens were designed and fabricated by Institute of Modern Physics for a compact pulsed hadron source at Tsinghua. The intense proton beams extracted from the ion source are transported through the transport line to match the downstream radio frequency quadrupole accelerator. Particle-in-cell code BEAMPATH was used to carry out the beam transport simulations and optimize the magnetic field structures of the transport line. Emittance growth due to space charge and spherical aberrations of the Glaser lens were studied in both theory and simulation. The results show that narrow beam has smaller aberrations and better beam quality through the transport line. To better match the radio frequency quadrupole accelerator, a shorter transport line is desired with sufficient space charge neutralization.     

Spectroscopic and thermal studies of 8 MeV electron beam irradiated HPMC films

Radiation-induced changes in hydroxypropyl methylcellulose (HPMC) films under electron irradiation were investigated and correlated with dose. Polymer samples were irradiated in air at room temperature by an electron beam accelerator in the range of 0-100 kGy. Various properties of the irradiated films were studied using a Ultraviolet-Visible spectrophotometer and Fourier transform infrared spectroscopy and thermogravimetric analysis. Electron irradiation was found to induce changes in the physical, chemical and thermal properties, depending on the irradiation dose.     

Study on Energy Variable Laser-Compton Gamma-ray with a Fixed Energy Electron Beam

The electron beam in medium scale (1-2 GeV) synchrotron radiation ring is attractive to generate an intense and narrow energy spread of laser-Compton gamma-ray beam in an MeV-region. Since the storage ring is operated with fixed electron energy for synchrotron radiation (SR) users, methods for changing the gamma-ray energy should be investigated. Three methods, 1) using a tunable laser, 2) changing the collision angle between the laser and the electron beam, and 3) selecting the scattering angle of the laser-Compton gamma-ray by using a collimator and an absorber, are studied by analytical calculation and simulation which takes into account the electron beam size and effective length of laser-electron interaction. Since a tunable laser has no enough power in the infrared wavelength region, an intense gamma-ray beam can not be generated by using a tunable laser at present stage. The collimator-absorber method generates enough amounts of gamma-rays, but simulation shows a broad energy spread, -7%, of the gamma-ray. An acceptable gamma-ray beam can be obtained by changing the incident angle of the laser beam whose pulse width and timing are synchronized with the electron beam pulse.     

脉冲离子束轰击靶的热效应数值模拟

分析了脉冲离子轰击靶膜和衬底的热效应,在能量较低的情形下,离子轰击处理为靶膜表面热流输入。采用有限元程序,对能量为600keV、束流为12mA的不同束斑半径的脉冲离子流轰击Cu基Ti靶的热传导进行了数值计算,得到了热传导清晰物理图象。     

Formation of Nano-Crystalline Phase in Hydrogenated Amorphous Silicon Thin Film by Plasma Focus Ion Beam Irradiation

A 3.3 kJ Mather type dense plasma focus device is used to generate a pulsed argon ion beam of 100 KeV in this work. Hydrogenated amorphous silicon (a-Si:H) film prepared by plasma enhanced chemical vapor deposition (PECVD) on c-Si substrate was irradiated with the argon ion beam produced by this dense plasma focus device. The effects of exposure to a single, 5 and 10 shots of dense plasma focus argon ion beam irradiation on the surface morphology, crystallinity and chemical bonding properties of the a-Si:H films were studied using Field Emission Scanning Electron Microscope (FESEM), X-ray Diffraction (XRD), Raman scattering and Fourier Transform Infrared (FTIR) spectroscopy, respectively. Formation of nano-crystalline silicon phase along with increase in structural order and hydrogen content in the film structure has been observed when the a-Si:H film was irradiated with a single shot of dense plasma focus argon ion beam. Exposure to 5 and 10 shots of the dense plasma focus argon ion beam irradiation reduced the hydrogen content resulting in a decrease in crystallinity and structural order in the film structure.