A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-/spl mu/m CMOS technology

The air gap in situ microlens (AGML) above-pixel sensor with 0.18-/spl mu/m CMOS image sensor technology has been successfully developed to dramatically improve the optical crosstalk and pixel sensitivity. We demonstrated excellent crosstalk diminution with the structure on small pixels. Compared with conventional 2.8 /spl mu/m square pixel, adopting the AGML can reduce the optical crosstalk up to 64%, and provide 21% in enhancement of photosensitivity at 0/spl deg/ incident angle. Furthermore, under 20/spl deg/ incident angle the optical crosstalk reduction and sensitivity enhancement are increased to 89% and 122%, respectively. Therefore, the AGML structure makes pixel size be further scaled down to less than 2.8 /spl mu/m square and maintain good performance.     

论红外焦平面器件的串音

红外探测系统通常需要将探测器密集排列以增加它们的空间分辨率。在焦平面阵列中,当投射到某一特定探测器光敏面上的红外光子在另一个探测器中产生信号时,这种现象称为串音。串音可能会影响焦平面阵列的分辨率性能。在高性能光伏阵列中,串音的主要成分是光生载流子在焦平面阵列的相邻探测器之间的横向扩散。从基本概念入手,介绍了相关串音研究的发展情况以及对串音问题的理解和体会。     

Dramatic reduction of optical crosstalk in deep-submicrometer CMOS imager with air gap guard ring

A dielectric structure, air gap guard ring, has been successfully developed to reduce optical crosstalk thus improving pixel sensitivity of CMOS image sensor with 0.18-/spl mu/m technology. Based on refraction index (RI) differences between dielectric films (RI = 1.4 /spl sim/ 1.6) and air gap (RI = 1), total internal reflection occurred at dielectric-film/air-gap interface, thus the incident light is concentrated in selected pixel. Excellent optical performances have been demonstrated in 3.0 /spl times/ 3.0 /spl mu/m pixel. Optical spatial crosstalk achieves 80% reduction at 20/spl deg/ incidence angle and significantly alleviates the pixel sensitivity degradation with larger angle of incident light.     

Validation of a crosstalk correction algorithm for ASTER/SWIR

The mechanism of crosstalk phenomena in the shortwave infrared (SWIR) subsystem of the Advanced Spaceborne Thermal Emission and Reflection Radiometer, which has six bands in the wavelength region of 1.6-2.43 /spl mu/m, is investigated. It is found that light incident to band 4 is reflected at the detector and the filter boundary, and then transported to other bands by multiple reflections in the focal plane area. A crosstalk correction algorithm is developed to improve the spectral separation performance of SWIR. Parameters of the crosstalk model, i.e., the amount of stray light and its area of influence, are determined by image analysis. By careful investigation of SWIR images around peninsulas, lakes, and islands, the crosstalk model is validated. Therefore, the correction algorithm is implemented in the preprocessing of higher level data products.     

Investigation of Crosstalk and Coupling Effects of Incident Plane Waves in Orthogonal Microstrips in High-Speed Integrated Circuits Using Full-Wave and Quasi-Static Methods

The crosstalk and coupling of the external fields on orthogonal microstrip transmission lines in different layers have significant effects on signal quality in MMIC and PCBs. In this paper the crosstalk is analyzed in detail using both full-wave and quasi-static methods. The used full wave method is mixed potential integral equation method of moment (MPIEMoM). Because of the weak coupling between lines, the effect of the incident plane-wave is studied by applying transmission line theory in a scattered voltage formulation uses quasi-TEM propagation model for each interconnection and the exact distribution of the incident electric field within the layers. Afterward, by using the predetermined lumped circuit model of the cross-region, the effect of coupling between two lines is calculated and then applied to terminal voltages in 1–20 GHz frequency range which results in the final terminal voltages.     

Performance Optimization of InSb Infrared Focal-Plane Arrays with Diffractive Microlenses

In this paper, diffractive microlens arrays are studied to concentrate incident light onto the effective photosensitive area of InSb infrared focal-plane arrays and thus enhance the quantum efficiency and reduce the crosstalk. Four designs of diffractive microlenses are investigated by a phase-matched Fresnel-elements approach. The quantum efficiency and crosstalk of the devices are calculated by using a two-dimensional device simulation with unit cell of 50 μm. Light propagation through the diffractive microlenses is simulated by the finite-difference time-domain method based on a rigorous vector solution of Maxwell’s equations. The results show that the highest quantum efficiency of the device with a diffractive microlens array is about 51.6% and the corresponding crosstalk is 5.06%. The quantum efficiency is 2.1% higher than that of the device with a spherical refractive microlens array.     

Light guide for pixel crosstalk improvement in deep submicron CMOS image sensor

Light guide, a novel dielectric structure consisting of PE-Oxide and FSG-Oxide, has been developed to reduce crosstalk in 0.18-/spl mu/m CMOS image sensor technology. Due to the difference in refraction index (1.46 for PE-Oxide and 1.435 for FSG-Oxide), major part of the incident light can be totally reflected at the interface of PE-Oxide/FSG-Oxide, as the incidence angle is larger than total reflection angle. With this light guide, the pixel sensing capability can be enhanced and to reduce pixel crosstalk. Small pixels with pitch 3.0-/spl mu/m and 4.0-/spl mu/m have been characterized and examined. In 3.0-/spl mu/m pixel, optical crosstalk achieves 30% reduction for incidence angle of light at 10/spl deg/.     

High-sensitivity and no-crosstalk pixel technology for embeddedCMOS image sensor

A high-photosensitivity and no-crosstalk pixel technology has been developed for an embedded active-pixel CMOS image sensor, by using a 0.35-μm CMOS logic process. To increase the photosensitivity, we developed a deep p-well photodiode and an antireflective film, consisting of Si₃N₄ film, for the photodiode surface. To eliminate the high voltage required for the reset transistor in the pixel, we used a depletion-type transistor as the reset transistor. The reset transistor also operates as an overflow control gate, which enables antiblooming overflow when excess charge is generated in the photodiode by high-illumination conditions. To suppress pixel crosstalk caused by obliquely incident light, a double-metal photoshield was used, while crosstalk caused by electron diffusion in the substrate was suppressed by using the deep p-well photodiode. A 1/3-in 330-k-pixel active-pixel CMOS image sensor was fabricated using this technology. A sensitivity improvement of 110% for 550-nm incident light was obtained by using the deep p-well photodiode, while an improvement of 24% was obtained by using the antireflective film. The pixel crosstalk was suppressed to less than 1% throughout the range of visible light     

一种串扰抑制型倒U掩埋式掺杂钳位光敏二极管光电特性研究

A design of an inverse U-shape buried doping in a pinned photodiode(PPD) of CMOS image sensors is proposed for electrical crosstalk suppression between adjacent pixels.The architecture achieves no extra fill factor consumption,and proper built-in electric fields can be established according to the doping gradient created by the injections of the extremely low P-type doping buried regions in the epitaxial layer,causing the excess electrons to easily drift back to the photosensitive area rarely with a diffusion probability; the overall junction capacitance and photosensitive area extensions for a full well capacity(FWC) and internal quantum efficiency(IQE) improving are achieved by the injection of a buried N-type doping.By considering the image lag issue,the process parameters of all the injections have been precisely optimized.Optical simulation results based on the finite difference time domain method show that compared to the conventional PPD,the electrical crosstalk rate of the proposed architecture can be decreased by 60%–80% at an incident wavelength beyond 450 nm,IQE can be clearly improved at an incident wavelength between 400 and 600 nm,and the FWC can be enhanced by 107.5%.Furthermore,the image lag performance is sustained to a perfect low level.The present study provides important guidance on the design of ultra high resolution image sensors.     

Investigation of Radiation Collection by InSb Infrared Focal-Plane Arrays with Micro-optic Structures

Three designs of micro-optic structures have been analyzed by two-dimensional simulation. Compared with traditional spherical microlenses, the micro-optic structures have the same ability to collect radiation and do not have the disadvantages of traditional microlenses. In our analysis the micro-optic structures are simple grooved notches above the space between two adjacent mesas. We also investigate the characteristics of InSb focal-plane arrays with both spherical microlenses and micro-optic structures under oblique incident radiation. Empirical formulas were derived to describe the response and crosstalk as a function of incident radiation angle. Our results show that the micro-optic structures can be effectively used in radiation collection for InSb infrared focal-plane arrays.     

Polarization independent LiNbO3 8×8 matrix switch

A polarization-independent LiNbO₃ strictly blocking 8×8 matrix switch has been developed. A relatively low insertion loss, below 12 dB, has been obtained by a reduction in bending loss, using a wide bent waveguide width. The switch has less than -18.7-dB crosstalk and about 85-V switching voltage at any incident polarization with 1.3-μ wavelength light     

Method of measuring optical switch crosstalk attenuationconsidering polarization variation

This paper describes a simple method for measuring the crosstalk attenuation of optical switches that takes into account the polarization variation of incident light. The method involves the use of a laminated film polarizer (LAMIPOL) and a polarization-maintaining fiber (PANDA). Crosstalk attenuation of 2×2 liquid-crystal optical switches for 1.3 μm single-mode fiber is measured using the proposed method and then conventionally with a polarization controller. The similarity of the results confirms the practicality of the proposed method     

基于MIMO信道的DSL传输模式研究

DSL技术是当前主流的宽带接入技术,串音干扰是制约DSL系统传输性能的重要因素。提出一种利用MIMO技术降低DSL系统中串音干扰的方法。在分析串扰对线路影响的基础上,建立了基于离散多音调制下的MIMO信道模型,应用奇异值分解法消除串扰,采用注水算法解决了MIMO-DSL信道的功率分配问题。Matlab仿真结果表明,其速率可以达到non-MIMO信道的1.5倍,有效降低了DSL系统串音干扰的影响。     

基于混合集成的高增益光接收模块北大核心

针对光载无线通信(RoF)系统对高增益、小型化光接收模块(ROSA)的需求,基于混合集成技术,设计并制作了一种高增益的四通道ROSA器件,尺寸为20.0 mm×14.0 mm×5.9 mm。模块内集成了低噪声放大器(LNA)芯片以提高射频信号增益,建立了射频信号传输电路,并对器件特性进行了仿真分析。经测试,器件的射频信号增益达14 dB,-3 dB带宽为23 GHz,在1550 nm波长的入射光下,器件的响应度为0.81 A/W,相邻信道之间的射频信号串扰小于-40 dB。该模块对于减小RoF系统的体积和功耗具有重要意义。     

宽谱光源对CMOS阵列电串扰的影响

CMOS阵列探测器中,像素单元间的串扰会影响其成像质量。为了解不同光源对CMOS电串扰的影响,针对CMOS图像传感器的电串扰特性建立了一个分析模型,结合CMOS图像传感器的工作原理定量计算了单色光、宽谱光源入射条件下的电串扰特性。分析结果表明CMOS图像传感器的电串扰随单色光波长、宽谱光源谱宽和中心波长的增大而增大,但中心波长与单色光波长相同的宽谱光源,其对电串扰的影响大于单色光。辐照功率为600 W,单色光波长为1 064 nm,电串扰大小约为50.611 mV;宽谱光源中心波长为1 064 nm,谱宽为400 nm时,电串扰的大小约为50.914 mV,相比于单色光电串扰增加了约0.303 mV。     

基于机器学习的PCB串扰预测

随着电子系统中逻辑和时钟频率的迅速提高以及信号边沿的不断变抖,串扰成为印刷电路板(PCB)设计人员必须关心的问题。高速电路仿真软件帮助设计人员降低了一定的设计成本,但对串扰的仿真预测仍需花费大量时间。为提高PCB串扰预测的效率,提出一种用于描述PCB的统一数据结构,全面分析了PCB产生串扰的因素,选用自然语言处理(NLP)模型构建了用于PCB串扰预测的系统,成功将PCB串扰预测的时间降至秒级,并拥有73.2%的准确率。     

高速互连线间的串扰规律研究

信号完整性中的串扰问题是目前高速电路设计中的难点和重点问题.利用高速电路仿真软件HSPICE和MATLAB软件,对高速电路中的互连线串扰模型进行了仿真分析,总结了三种变化因素下互连线问的串扰规律,对部分串扰规律进行了探索性的研究.     

太赫兹在片S参数测量串扰修正方法研究

为修正太赫兹在片S参数测试时探针间串扰误差,提出了一种包含串扰的新型误差模型,以及基于此误差模型的校准方法。该方法分别对待校准和测试时的串扰误差。基于这一概念,开发了一种新型12项误差模型,将串扰误差视为与被测件(DUT)并联的独立二端口网络。在测量DUT前通过测量一对长度与DUT相同的开路标准实现对串扰误差的表征并移除。实验证明,在140~220GHz频率范围内,使用新方法校准后测量10 dB衰减器,与没有串扰校正的传统12项误差模型相比,220 GHz时传输系数大约提高了1 dB。     

作波分复用AWG同频串扰的相关特性及理论研究

本文讨论了光信号在阵列波导光栅（AWG）中同频光电流串扰的自相关函数,从理论上探讨了同频串扰的自相关系数,研究了相关系数与同频串扰引起延时的关系,及同频串扰噪声功率和串扰的极化方向的关系,得到了相关系数R_F与AWG延时时间τ、记录值n之间的关系曲线.数值计算表明:串扰延时使AWG的传输信号存在负相关、弱相关、正相关,其串扰延时对记录长度的影响呈周期性变化.