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1.
设计出了一种双背馈空气夹层微带圆极化天线单元,该天线单元具有13%的阻抗带宽,最大辐射方向上轴比2.5dB。用该天线单元以顺序旋转的方式组成四元阵,再用八个该天线单元和两组一分八功分器组成八单元阵列,研究了该阵列天线圆极化波束分别指向天线阵法向和偏转30°时的辐射特性和极化特性。该天线单元组阵圆极化轴比特性好,易于实现波束扫描,适合用于有源相控阵系统。  相似文献   

2.
蔺炜  黄衡 《电波科学学报》2018,33(3):293-300
随着无线通信系统的快速发展, 宽带可重构天线将在未来发挥巨大作用.文中综述了四种宽带极化与方向图可重构天线, 它们都具有提高通信系统容量, 消除极化失配, 扩大辐射范围等特点.首先介绍了一种宽带的多线极化可重构天线.此款天线基于L型探针馈电的贴片天线, 实现了0°, 45°, 90°以及—45°极化的选择, 具有宽带、低剖面、高增益的特点.其次, 同样基于L型探针馈电的贴片天线, 通过引入一个输出相位可重构的功分馈电网络, 实现了宽带的圆极化可重构天线, 其同样具有宽带、低剖面、高增益的特点.除了极化可重构天线, 文中还介绍了两款方向图可重构天线, 可分别实现线极化以及圆极化的全向锥状波束以及定向辐射波束的方向图可重构.前者是基于宽带的单极子贴片天线跟L型探针馈电的贴片天线的有机结合.后者是基于环缝隙的贴片天线配合激励端口可重构的功分馈电网络的组合.此两款天线均具有结构紧凑、宽带、增益稳定的特点.  相似文献   

3.
为了实现天线波束的灵活重构和调控,提出了一种方向图可重构圆极化阵列天线。阵列天线选用L型探针耦合馈电以拓宽阻抗带宽和圆极化轴比带宽,并基于提出的相位变换器设计输出端口间相位差可调的馈电网络。通过控制馈电网络中相位变换器上各PIN二极管工作状态,实现了天线的主辐射波束指向在+40°,+15°,-15°和-40°角度间切换。实测结果表明,该阵列天线在四种工作状态下的重叠阻抗带宽约为22%(2.2~2.74 GHz),重叠轴比带宽约为12.2%(2.33~2.62 GHz),且圆极化峰值增益为6.48 dBi。  相似文献   

4.
本文利用最大功率传输效率法(MMPTE),通过4个相同左旋圆极化贴片单元作为子阵来实现阵列天线圆极化可重构。通过在被设计阵列(作为发射阵列)远场区引入极化控制接收天线,可以将整个收发系统看作一个无线功率传输系统,这样就可以把阵列天线的设计问题转换为一个天线之间的传输效率最优化的问题。通过调节接收天线的极化方式和接收位置,可控制被设计阵列的极化方式和扫描角度。与传统做法不同的是,被设计阵列单元的极化方式确定时,通过改变接收天线的极化方式,阵列还能产生与单元极化相反的极化方式,同时两种极化方式所得的增益差距在1dBi以内。本文以中心频率在2.45GHz的左旋圆极化单元组成的十六单元阵列为例,说明如何实现阵列左右旋极化的可重构以及+/-60°的扫描功能。  相似文献   

5.
设计了一款宽波束的圆极化天线单元以及1×4的天线阵列,实现了一维的宽角圆极化扫描.天线单元由单层的辐射贴片和介质基片集成波导(substrate integrated waveguide,SIW)背腔构成,通过在辐射贴片上切角微扰和开U型槽实现右旋圆极化,并利用SIW背腔缝隙展宽波束.同时利用SIW背腔减小阵列单元间的互耦,实现宽角圆极化扫描.仿真与测试结果表明,天线阵列实现了扫描角为-53°~57°,3 dB波束宽度覆盖范围为-76°~79°,在主波束扫描覆盖范围内轴比(axial ratio,AR)均小于3 dB,且在扫描范围内增益变化平稳,可实现良好的宽角范围的圆极化扫描特性.  相似文献   

6.
设计了一种新型宽波束圆极化微带天线,该天线采用四探针馈电,馈电网络由威尔金森功分器和传输线移相器组成,使四个馈电探针的相位依次相差π/2,实现了右旋圆极化辐射。通过Ansoft HFSS仿真结果表明:该微带天线结构简单、极化纯度高、全向性能好、轴比小于3dB的圆极化带宽达到27.7%,高于一般的微带圆极化天线(轴比小于3dB带宽约为15%)。天线可以很好地满足GPS通信的技术要求,也可用于无线局域网。  相似文献   

7.
提出了一种带滤波功能的2′2圆极化可控阵列天线,采用探针对每个辐射贴片进行馈电,通过控制辐射贴片的激励相位和极化,实现整个阵列天线的圆极化特性。嵌入在阵列天线馈电网络中的耦合谐振器对保证了馈电网络在幅度响应上呈现滤波特性的同时,在相位上控制每个辐射贴片激励端口处的信号相位在-90°和90°之间变化,同时结合90°移相网络,可实现对整个阵列天线左旋圆极化(LHCP)和右旋圆极化(RHCP)的控制。实测结果表明:该阵列天线能控制辐射的圆极化特性,并获得优异的LHCP和RHCP特性;在两种极化状态下,阵列天线工作频带内均具有较为平坦的增益特性,平均增益为10.4 dBic,带外增益特性呈现较好的滤波特性,在远离通带上、下边带100 MHz 处增益抑制均达到8.6 dB以上。  相似文献   

8.
设计出了一种双层宽波束圆极化微带天线,通过Ansoft HFSS软件仿真优化出天线的几何结构参数,并进行了加工和测试。采用该天线做为天线单元,组成一副4×4阵列,进行了天线阵的仿真、加工和测试。结果表明:该天线单元在天线阵中互耦较小,天线方向图基本上无畸变;在工作频带内,天线阵增益大于16.5 dBi,同时能够实现450°×450°范围的波束扫描。  相似文献   

9.
针对圆环形阵列天线产生轨道角动量(orbital angular momentum, OAM)涡旋波的技术, 提出了宽带圆极化单臂螺旋天线(single-arm spiral antenna, SASA)构成的机械可重构圆环形阵列天线, 并深入研究了OAM涡旋波的模态检测和收发情况.利用SASA的相位特性, 调控各阵元绕自身轴线的旋转角度, 可灵活控制OAM涡旋波的主波束辐射方向.该设计可实现OAM模态和涡旋波辐射方向双可重构调控特性, 并根据SASA的旋转角方向实现左旋圆极化或右旋圆极化OAM涡旋波.实验加工并测试了该可重构圆环形OAM阵列天线, 验证了该思想和方法的正确性和有效性.  相似文献   

10.
提出了一种三馈电圆极化微带天线。天线馈电网络采用一分三功分馈电,实现微带贴片天线的圆极化辐射,增加方向图的旋转对称性。用该天线作为阵列单元,采用顺序旋转布阵技术组成一个3×4阵列,有效地改善了阵列天线的增益扫描特性。研究了该阵列天线波束扫描时的辐射特性和极化特性。仿真结果表明:阵列天线在中心工作频率处能实现俯仰60°的扫描,在扫描范围内增益大于11.9 d Bi,轴比小于2 d B。  相似文献   

11.
Waveguide multilayer optical card (WMOC) is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling & processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic (VB) language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.  相似文献   

12.
IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…  相似文献   

13.
The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.  相似文献   

14.
Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.  相似文献   

15.
A doping system consisting of NPB and PVK is employed as a composite hole transporting layer (CHTL). By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK : NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK : NPB at 1:3.  相似文献   

16.
An insert layer structure organic electroluminescent device(OLED) based on a new luminescent material (Zn(salen)) is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn(salen)/Liq/LiF/A1/CuPc/NPD/Zn(salen)/Liq/LiF/A1. Effective insert electrode layers comprising LiF(1nm)/Al(5 nm) are used as a single semitransparent mirror, and bilayer cathode LiF(1 nm)/A1(100 nm) is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.  相似文献   

17.
Due to variable symbol length of digital pulse interval modulation(DPIM), it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation(FDPIM) method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.  相似文献   

18.
It is a key problem to accurately calculate beam spots' center of measuring the warp by using a collimated laser. A new method, named double geometrical center method (DGCM), is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device (CCD) is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What's more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.  相似文献   

19.
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.  相似文献   

20.
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.  相似文献   

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