碳化硅电力电子器件及其制造工艺新进展

评述了各种碳化硅电力电子器件研究开发的最新进展及其发展前景,指出碳化硅的优势不仅仅限于能提高功率开关器件的电压承受能力、高温承受能力和兼顾频率与功率的能力,还在于能大幅度降低器件的功率损耗,使电力电子技术的节能优势得以更加充分地发挥.针对碳化硅材料的特殊性和实现碳化硅器件卓越性能的需要,分析了器件工艺当前亟待解决的问题.     

碳化硅电力电子器件及其应用的研发新进展

综合评述诸如肖特基势垒二极管、pn结二极管、功率MOS、功率JFET、BJT、GTO、GCT以及功率模块等各种碳化硅电力电子器件研究开发的最新进展及其发展前景，指出碳化硅的优势不仅仅限于能提高功率开关器件的电压承受能力、高温承受能力和兼顾频率与功率的能力，还在于能大幅度降低器件的功率消耗，使电力电子技术的节能优势得以更加充分的发挥；文章还对碳化硅器件在电力电子领域特别是电力变换器方面的初步应用及开发情况也做了简略介绍。     

科锐推出芯片型碳化硅功率器件助力高效电力电子模组

正日前,碳化硅(SiC)功率器件领域的市场领先者科锐公司宣布推出业界首款符合全面认证的可应用于电力电子模组的裸芯片型及芯片型碳化硅MOSFET功率器件。科锐碳化硅ZFET~(TM)MOSFET器件和二极管适用于高阶电力电子电路,与传统硅器件相比,可实现更高的能源效率。     

国产碳化硅肖特基二极管研制与量产

自晶闸管和功率晶体管问世和应用以来,硅半导体器件在功率处理能力和开关频率方面不断改善,先后诞生了GTR、GTO、MOSFET和IGBT等现代电力电子器件,对电力电子系统缩小体积、降低成本起到了极其关键的作用。硅电力电子器件经过近60年的发展,性能已经趋近其理论极限,通过器件原理的创新、结构的改善及制造工艺的进步已经难以大幅度的提升其总体性能,制约未来电力电子技术进一步发展。碳化硅肖特基功率器件以其优良特性和结构与制造工艺优势成功实现了商业化。     

碳化硅电力电子器件

以硅器件为基础的电力电子技术，因大功率场效应晶体管(功率MOS)和绝缘栅双极晶体管(IGBT)等新型电力电子器件的全面应用而日臻成熟。目前这些器件的开关性能，已随其结构设计和制造工艺的相当完善，而接近其材料特性决定的理论极限，依靠硅器件继续完善和提高电力电子器件装置与系统的潜力已十分有限。伴随新世纪的到来，实用化和商品化的碳化硅肖特基势垒功率晶体管以其初露的优势特性，证实了它在改善以硅器件为基础的电力电子技术方面将引起革命性变化。     

高频用电力半导体器件的品质因数

以硅技术为基础的电力器件正在迅速地接近其性能的理论极限。因此,为了降低电力器件在高频系统中的功率损失并获得高的效率,开发其它材料的电力器件则是很必须的。本文就选择高频用优质半导体材料提出了几种理论指导原则,并且说明:砷化镓、碳化硅以及半导电金刚石基片器件,在降低高频功率损失方面都具备明显的优越性。     

一种1 200 V碳化硅沟槽MOSFET的新结构设计

为了实现能源的高效利用,通过减小器件的导通电阻和栅漏电容来降低MOSFET的功耗一直是功率电子学的研究热点,但二者存在折衷关系.碳化硅的材料优势使碳化硅MOSFET更适合高频应用,在不过多增大导通电阻的情况下,减小栅漏电容以降低器件在高频应用中的动态功耗是本文的设计重点.提出了一种带有沟槽型源端和N型包裹区的碳化硅沟槽...     

CPM F- 1200-S080B/S 160B：硅MOSFET

科锐公司推出符合全面认证的可应用于电力电子模组的裸芯片型及芯片型碳化硅MOSFET功率器件。     

基于碳化硅功率器件的高频感应焊机设计探索构架

文中基于碳化硅功率器件应用的优势展开分析,讨论了碳化硅功率器件的高频感应焊机设计要点,包括逆变器原理分析、功率单元设计、电源控制系统设计、驱动及减速装置设计、模糊 PID 控制设计等,同时借助实验的方式验证了高频感应焊机设计方案的可行性,积累了相应的设计经验,以期为高频感应焊机的后续开发与设计提供参考。     

科锐新型1,200V Z-Rec碳化硅肖特基二极管系列以更低的成本为功率转换应用带来更高的性能

碳化硅（SiC）功率器件市场领先者科锐公司日前宣布推出一新型产品系列。该系列产品由七款1,200V Z-Rec碳化硅肖特基二极管组成,不仅优化了价格和性能,还可提供多种额定电流和封装选择。通过推出种类齐全的碳化硅二极管产品系列,科锐不断将碳化硅功率器件向主流功率应用中推广。     

SiC电力电子器件对电力系统的影响

宽禁带SiC材料被认为是高性能电力电子器件的理想材料,比较了Si和SiC材料的电力电子器件在击穿电场强度、稳定性和开关速度等方面的区别,着重分析了以SiC器件为功率开关的电力电子装置对电力系统中柔性交流输电系统(FACTS)、高压直流输电(HVDC)装置、新能源技术和微电网技术领域的影响。分析表明,SiC电力电子器件具有耐高压、耐高温、开关频率高、损耗小、动态性能优良等特点,在较高电压等级(高于3 kV)或对电力电子装置性能有更高要求的场合,具有良好的应用前景。     

Power Semiconductor Devices for Hybrid, Electric, and Fuel Cell Vehicles

Power semiconductor devices are key components in all power electronic systems, particularly in hybrid, electric, and fuel cell vehicles. This paper reviews the system requirement and latest development of power semiconductor devices including IGBTs, freewheeling diodes, and advanced power module technology in relating to electric vehicle applications. State-of-the-art silicon device technologies, their future trends, and theoretical limits are discussed. Emerging wide bandgap semiconductor devices such as SiC devices and their potential applications in electric vehicles are also reviewed     

Power ICs in the saddle

Improving the voltage, current, and switching capabilities of power electronics devices makes for more efficient control of power and energy. Interface with microprocessors for protection from unfriendly environments is also an asset. The author discusses the development of power electronic devices using MOSFETs, insulated gate transistors, and MOS controlled thyristors. The future of SiC based devices is also discussed     

Advances in SiC power MOSFET technology

In recent years, SiC has received increased attention because of its potential for a wide variety of high temperature, high power, high frequency, and/or radiation hardened applications under which conventional semiconductors cannot adequately perform. For semiconductor devices designed to operate in these harsh conditions, SiC offers an unmatched combination of electronic and physical properties. The availability of SiC wafers on a commercial basis has led to the demonstration of many types of metal-oxide semiconductor (MOS)-gated devices that exploit its unique properties. To which extent the potential of SiC power MOSFET can be utilized is a question of appropriate SiC polytype, device structure, MOS interface quality and maturity of the technology. This paper reviews the present status of the SiC power MOSFETs technology that is approaching commercialization. Emphasis is placed upon the impact of SiO₂–SiC interface quality on the performance of SiC MOSFETs.     

SiC电力电子器件研究现状及新进展

由于硅材料本身的限制,传统硅电力电子器件性能已经接近其极限,碳化硅(SiC)器件的高功率、高效率、耐高温、抗辐照等优势逐渐突显,成为电力电子器件一个新的发展方向.综述了SiC材料、SiC电力电子器件、SiC模块及关键工艺的研究现状,重点从材料、器件结构、制备工艺等方面阐述了SiC二极管、金属氧化物半导体场效应晶体管(MOSFET)、结晶型场效应晶体管(JFET)、双极结型晶体管(BJT)、绝缘栅双极晶体管(IGBT)及模块的研究进展.概述了SiC材料、SiC电力电子器件及模块的商品化情况,最后对SiC材料及器件的发展趋势进行了展望.     

4H-SiC power devices for use in power electronic motor control

Silicon carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices. This paper presents an overview of SiC power devices and concludes that the MOS turn-off thyristor (MTO™), comprising of a hybrid connection of SiC gate turn-off thyristor (GTO) and MOSFET, is one of the most promising near term SiC switching device given its high power potential, ease of turn-off, 500°C operation and resulting reduction in cooling requirements. The use of a SiC and an anti-parallel diode are primary active components which can then be used to construct an inverter module for high-temperature, high-power direct current (d.c.) motor control.     

High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment

In this paper, we present the realization of high-temperature operation of SiC power semiconductor devices by low-temperature sintering of nanoscale silver paste as a novel die-attachment solution. The silver paste was prepared by mixing nanoscale silver particles with carefully selected organic components which can burn out within the low-temperature firing range. SiC Schottky diodes were placed onto stencil-printed layers of the nanoscale silver paste on Au or Ag metallized direct bonded copper (DBC) substrates for the die-attachment. After heating up to 300degC and dwell for 40 min in air to burn out the organic components in the paste and to sinter the nanoscale silver, the paste consolidated into a strong and uniform die-attach bonding layer with purity >99% and density >80%. Then the die-attached SiC devices were cooled down to room temperature and their top terminals were wire-bonded to achieve the high-temperature power packages. Then the power packages were heated up from room temperature to 300degC for high-temperature operation and characterization. Results of the measurement demonstrate the low-temperature silver sintering as an effective die-attach method for high-temperature electronic packaging. An advanced packaging structure for future SiC transistors with several potential advantages was also proposed based on the low-temperature sintering technology.     

真空电子器件输出窗次级电子倍增效应研究进展

真空电子器件在毫米波和太赫兹波频段具有大功率的天然优势,可用于构建高效率、大功率的毫米波和太赫兹辐射源,对高功率微波技术及太赫兹技术的发展具有十分重要的意义。输出窗是真空电子器件的关键部件,输出窗击穿是器件失效的主要原因之一,而次级电子倍增效应被认为是输出窗击穿的主要原因。本文梳理了目前分米波及厘米波波段真空电子器件输出窗的研究现状,在此基础上梳理了这一领域未来研究的主要发展方向,以期为未来真空电子器件向更高功率和更高频率等级发展提供参考。     

Current SiC technology for power electronic devices beyond Si

Recent big progress in SiC technology for power electronic devices beyond Si is reviewed. Historical aspects in SiC development are described. Current subjects such as bulk crystal growth, epitaxial growth, device processes for new generation of SiC power devices are briefly explained. Commercially available Schottky diodes and possible switching devices are introduced.     

今日SiC电子学

ＳｉＣ是近几年迅速发展的一种半导体材料,在微波功率器件、功率电子开关器件、高温工作器件等方面比Ｓｉ和ＧａＡｓ具有更大的优势。本文介绍了ＳｉＣ材料特性、材料制备及目前器件研制水平。