SJ/T 11365-2006《电子信息产品中有毒有害物质的检测方法》

本标准参考了IEC 111/54/CDV《电子电器产品中六种限用物质铅、汞、镉、六价铬、多溴联苯和多溴二苯醚的检测方法》,附录A为规范性附录.……     

SJ/T 11365-2006《电子信息产品中有毒有害物质的检测方法》

发布日期:2006-11-06实施日期:2006-11-06标准提出单位:信息产业部电子信息产品污染防治标准工作组归口单位:中国电子技术标准化研究所本标准参考了IEC111/54/CDV《电子电器产品中六种限用物质铅、汞、镉、六价铬、多溴联苯和多溴二苯醚的检测方法》,附录A为规范性附录。范围本标准规定了电子信息产品中含有的铅(Pb)、汞(Hg)、镉(Cd)、六价铬[Cr(Ⅵ)]、多溴联苯(PBB)和多溴二苯醚(P B D E)六种限用的有毒有害物质或元素的检测方法,适用于《管理办法》定义的电子信息产品。术语和定义筛选:初步量化被检物中待测元素浓度的一种分析方…     

SJ/T 11365-2006《电子信息产品中有毒有害物质的检测方法》

本标准参考TIEC 111／54／CDV《电子电器产品中六种限用物质铅、汞、镉、六价铬、多溴联苯和多溴二苯醚的检测方法》，附录A为规范性附录。     

基于介电泳技术制备SiC纳米线薄膜晶体管

本文从理论和实验两方面,研究了介电泳技术中SiC纳米线溶剂的选择。从介电泳力、介电泳力矩、溶剂的挥发性和毒性角度分析,发现异丙醇是合适的SiC纳米线溶剂。以异丙醇作为溶剂,利用介电泳技术实现了SiC纳米线的定向排列,并得到纳米线薄膜。SiC纳米线溶液浓度分别为0.1μg/μL,0.3μg/μL, 0.5μg/μL时,得到定向排列纳米线的密度分别为 2/μm,4/μm,6/μm。并且利用密度为6/μm的SiC纳米线薄膜制备了晶体管,该晶体管的迁移率为13.4 cm2/V?s。     

RoHS指令中六种有害物质检测方法的研究

欧盟WE EE/RoHS指令案的生效将对我国电子工业产生巨大影响,如何对电子产品中所限制的有害物质进行精准测量则显得意义重大.本文介绍了RoHS指令中铅、镉、汞、六价铬、多溴联苯及多溴二苯醚等六种有毒有害物质的检测方法,并对目前国内外相关的检验法·规、标准进行了概述.     

基于正交设计的三联吡啶钌-电化学发光法测定罗库溴铵

目的:建立一种检测罗库溴铵的电化学发光(ECL)方法.方法:利用正交设计实验对检测体系中三联吡啶钌(Ru(bpy)32+)浓度和磷酸缓冲盐(PBS)浓度及pH值实行搭配实验,并对实验结果进行多元二次回归分析,得到最佳检测条件.结果:Ru(bpy)32+浓度、PBS浓度及pH值的最佳实验条件分别为1.0 mmol/L、102.5 mmol/L和8.0.本方法检测线性范围为0.1至100μg/mL,检测限为0.06 μg/mL.结论:该方法快速、简单.可用于罗库溴铵注射液的测定.     

质量资讯

电子电气有害物质检测四项国家标准通过审定近日,经国家标准化管理委员会高新技术部授权,“有害物质检测方法工作组”秘书处在深圳组织召开电子电气产品中有害物质检测四项国家标准的标准审定会。《电子电气产品中限用物质多溴联苯、多溴二苯醚检测方法》等4项国家标准通过审定。这4项标准分别是:《电子电气产品中限用物质多溴联苯、多溴二苯醚检测方法》、《电子电气产品中限用物质六价铬(C r)检测方法》、《电子电气产品中限用物质铅(Pb)、汞(Hg)、镉(Cd)检测方法》和《电子电气产品中限用物质铅、汞、镉、铬和溴的快速筛选-X射线荧光光…     

“溴”有望率先通过REACH

迄今为止溴阻燃剂有75种，只发现五溴二苯醚和八溴二苯醚对环境和健康，存在一些潜在的危险性，但溴却因此被禁用。     

电子电气产品的有害物质检测方法

从取样、前处理及仪器分析方面对电子电气产品中有害物质的检测做了简要的分析．并列举了国际上对铅、镉、汞、六价铬、多溴联苯、多溴二苯醚的参考检测方法。     

液相色谱-串联质谱法测定凡纳滨对虾中的黄曲霉毒素B1

采用液相色谱-串联质谱法,测定了凡纳滨对虾(Litopenaeus vannamei)中黄曲霉毒素B1。采用选择离子扫描方式(SRM),ESI正离子模式检测,黄曲霉毒素B1的分子离子峰为(m/z)313.00,定量离子为(m/z)285.1,定性离子为(m/z)269.1、241.1。样品经过乙酸乙酯提取,正己烷净化,以乙腈0.5mmol/L乙酸铵水溶液(含0.1%甲酸)为流动相进行梯度洗脱。结果表明,黄曲霉毒素B1在0-5ng/m L范围内线性关系良好(R0.999),检出限为0.1μg/kg,在0.5μg/kg、1.0μg/kg、2.0μg/kg三个水平上进行加标回收试验,平均回收率为95.8%—103.2%,精密度RSD≤3%。采用该方法满足凡纳滨对虾中黄曲霉毒素B1的低含量检测。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.