Cl掺杂对n-Cu2O的光电性能的影响

试图用传统方法把自由电子激光推向更短波长在技术上遇到了严重挑战。利用晶体摆动场辐射作为短波长相干光源引起了人们的广泛注意。利用Lindhard势, 在经典力学框架内把粒子运动方程化为广义Duffing方程, 利用平均法分析了粒子在次共振附近的运动行为; 并对系统的跳跃现象和临界特征进行了讨论。结果表明, 系统的稳定性与其参数有关, 只需适当调节这些参数, 稳定性就可以在原则上得到保证。     

时空周期场与非相对论粒子的电磁辐射

寻找新光源,特别是短波长激光光源引起了人们的广泛兴趣.在时空周期场中运动的带电粒子表现出了预期的行为.指出了置于外场中的超晶格是典型的时空周期场.假设掺杂超晶格的导带底是周期调制的,在经典力学框架内,将非相对论粒子在时空周期场中的运动方程化为带有阻尼项和受迫项的摆方程.在无阻尼情况下,利用摄动法导出了系统的一阶近似解,讨论了高次谐波辐射和辐射强度;用Hamiltonian原理和相平面方法讨论了系统的稳定性.在阻尼情况下,利用Melnikov方法讨论了系统的临界特征和混沌行为.结果表明,非相对论粒子的高次谐波辐射存在局部极大,可望作为短波长激光光源.由于系统的稳定性与它的参数有关,只需适当调节这些参数,系统的稳定性就能得到保证.     

Mathieu方程的不稳定区及其晶体摆动场辐射的稳定性

从势和场的观点出发,在经典力学框架内和线性近似下,把粒子的运动方程化为Mathieu方程。利用多尺度方法求出了系统的周期解以及相应的过渡曲线,并讨论了系统的稳定性。结果表明,系统的稳定性与弯晶曲率有关,曲率越大稳定性越差。这就是说,试图利用晶体摆动场辐射作为短波长相干光源时,系统稳定性必须充分考虑。     

Moriere势与晶体摆动场辐射的弛豫行为

在经典力学框架内和偶极近似下,利用Moriere势把粒子运动方程化为了具有软硬弹簧特性的广义Duffing方程,利用平均法分析了系统在主共振线附近的运动行为;对系统的稳定性和弛豫行为进行了讨论,并导出了系统的临界参数.结果表明,系统的稳定性与参数有关,适当调节这些参数,系统的稳定性就可以得到保证.     

混合激励与应变超晶格系统沟道运动的临界特征

从势和场的观点出发讨论了带电粒子在应变超晶格中的运动行为.在经典力学框架内和偶极近似下,引入正弦平方势,把粒子运动方程化为具有阻尼项和混合激励项的广义摆方程.利用Melnikov方法讨论了系统的临界性质与混沌行为.结果表明,系统的混沌行为与它的参数有关,适当调节参数,就可以原则上保证系统的稳定性.     

晶体摆动场辐射与共振线附近的动力学行为

在人们寻找新光源,特别是短波长激光光源的探索中弯晶起到了十分重要的作用,参数X-射线辐射射和晶体摆动场辐射引起了人们极大注意。为了成功获得参数X-射线辐射和晶体摆动场辐射,系统必须是稳定的。分析了晶体弯曲、辐射衰减、晶格热振动、电子多重散射和相互作用的非线性等因素对系统稳定性的影响。在经典力学框架内和小振幅近似下,把粒子运动方程化为了具有阻尼项、受迫项和固定力矩的广义摆方程。用摄动法讨论系统在1/2和1/3超共振附近的运动行为,发现了共振曲线的后弯和跳跃现象。临界条件的分析表明,系统的稳定性与它的参数有关,适当调节系统参数,就可以保证系统是稳定的。     

超晶格量子阱异宿轨道的混沌行为

在经典力学框架内和小振幅近似下,把超晶格量子阱的粒子运动方程化为了具有阻尼项、受迫项的广义Duffing方程,并用Jacobian椭圆函数和第一类椭圆积分解析地给出了无扰动系统的解和粒子运动周期;用Melnikov方法构造了异宿轨道的Melnikov函数,并利用Poincare映射分析了异宿轨道在Smale马蹄意义下的混沌行为.结果表明,系统进入混沌的临界条件与它的参数有关,只需适当调节系统参数就可以避免或控制混沌发生,从而保证系统的稳定性.     

倒置摆的有效势与晶体摆动场辐射的稳定性

在经典力学框架内,把粒子的运动方程化为倒置摆方程.在线性近似下,分别用参数变易法和LP方法讨论了无阻尼情况下系统的一阶不稳定区.在非线性近似下,用有效势分析了系统的稳定性,并对普通摆和倒置摆进行了统一描述.结果表明,系统的稳定性与阻尼有关,阻尼越大稳定性越好;指出了普通摆描述的沟道粒子的运动行为,系统的平衡位置过支点垂直向下;倒置摆描述了带电粒子在周期弯晶中的准沟道行为,平衡状态过支点垂直向上.     

受迫摆方程与准沟道辐射的稳定性

从受迫摆方程出发导出了系统的频率响应,并从Mathieu方程的稳定区和不稳定区讨论了系统的稳定性。指出了粒子的准沟道运动可以用周期转动解来描述,并利用系统的周期倍分叉、跳跃现象和弛豫行为讨论了准沟道粒子运动的稳定性。结果表明,适当选择参数,系统的稳定性是可以保证的。     

晶体摆动场与周期弯晶作为γ-速调管的可能性

 寻找新光源,特别是短波长相干光源一直是人们努力追求的目标.将晶体摆动场同速调管技术相结合可望获得短波长相干光源,特别是相干的γ-光源.文章通过晶体摆动场莱塞效应分析,讨论了周期弯晶作为γ-速调管的可能性.在经典力学框架内和小增益近似下,把晶体摆动场中的粒子纵向运动方程化为经典的摆方程,并用摄动法导出了系统的能量增益.结果表明,当弯晶作为放大器模式工作时,要求的束流强度比较高,在级联速调管工作模式下束流强度要求可降低3-4个量级,完全位于当今加速器技术能力范围内.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.