基于PSK调制的激光通信系统研究

设计了一种基于PSK(相移键控)外调制的激光通信系统。该系统选用637nm的全固态激光器作为光源,利用FPGA(现场可编程门阵列)开发板作为调制解调硬件控制声光调制器将调制信号加载于激光,通过大气信道传输,采用光电倍增管作为激光接收器。对传统PSK解调进行了改进,消除了相位模糊现象,搭建了完整的激光通信系统实验平台。实现了通信速率为115.2kbit/s、误码率低于10-8的激光通信系统。     

大气激光通信系统偏振移位键控调制技术

为了实现自由空间高速激光通信,对基于偏振移位键控的激光通信调制和解调技术进行了研究。介绍了一种基于PolSK的调制与差分解调方法,对实现大气信道中高速激光通信的调制与解调方法进行了研究,并通过理论推导及计算机仿真验证了其可行性。仿真研究结果表明:虽然大气信道对激光的传输特性有一定的影响,但利用以左右旋圆偏振光调制为基础的偏振态移位键控方法实现数据调制传输,并采用差分探测解调技术,可以实现传输速率为2.5 Gb/s、传输距离为20 km的低误码率数据传输。基本满足了空间激光通信系统的稳定可靠性、简便易实现、抗干扰能力强等要求。     

基于边带相关算法的时频调制解调技术的研究

时频调制技术（TFSK）由于其良好的抗频率选择性衰落的特性而被应用于无线激光通信中。文中介绍了一种新调制解调方法,即利用信号的相关性,依据边带相关算法分析出信号的载波频率,再根据TFSK的调制载波的频率顺序,还原出原始信号。以Matlab作为仿真平台,验证了此方法的可行性,并计算出了误码率曲线。为无线激光通信中调制解调系统的设计提供了参考。     

新型紫外光通信系统调制解调器的FPGA实现

通过对功率利用率,误码率,带宽效率以及实现电路的复杂程度进行比较,选用定长数字脉冲间隔调制作为紫外光通信的调制解调方法,基于XILINX可编程逻辑器件XC4VSX35 FPGA设计实现了一个紫外光通信的调制解调系统,详细介绍了此调制解调系统的实现过程.Model Sim的仿真结果证明了该设计的正确性.     

激光通信系统中的光源调制技术研究

在信息技术、网络技术、激光器及探测器技术的高速发展和推动下,激光通信作为一种频带宽、速度快、不受电磁干扰和高保密性的通信技术方兴未艾,在军事和民用领域都具有巨大应用潜力.光源和探测器是激光通信系统中影响通信速率、通信距离和误码率的关键因素.本文论述了激光通信系统中光源的选择及针对选用的光源所采用的几种常用调制方式,并对...     

基于FPGA平台的紫外通信系统的解调技术的研究

提出了一种用FPGA解调来提高紫外通信系统的传输速率的方法;采用FPGA设计解调电路,很好地处理了2FSK信号的过渡带问题,使传输的信息经调制后能正确解调;在传输速率为9.6 kbit/s时,误码率仅为0.001%,数据速率已经达到了国际先进水平.     

大气激光通信PPM调制解调系统设计与仿真研究

脉冲位置调制(PPM)是大气激光通信的关键技术之一,可以减少激光器的发射功率,增加通信距离。从实际出发,采用高速数字信号处理器(DSP)设计出PPM调制解调系统;同时介绍了PPM解调时对时隙同步和帧同步的处理方法。仿真结果表明,该调制解调系统具有较好的抗干扰能力,可以满足通信系统的要求。     

高速大气激光通信收发模块的研究与设计

设计并实现了高速半导体激光器调制驱动电路和光电二极管直接检测电路的收发合 一模块。计算机间大气激光的双工通信实验表明,所开发的激光收发模块具有宽带、高速、误码率低等性能,为大气激光通信系统提供了可靠保证。     

一种大气激光通信系统抗干扰调制/解调技术

空间光通信以大气为介质进行信息传输时,不可避免地受到大气散射、大气湍流及背景光等因素的影响。针对大气信道对通信质量的影响,提出了基于激光偏振态参数的调制与解调技术,设计了一种基于偏振移位键控(PolSK)的大气激光通信系统并对其原理进行了简要分析。该通信系统采用偏振移位键控的调制方式,即利用圆偏振光的两种旋态(左旋和右旋)进行编码、调制从而实现数据的传输,接收端采用平衡探测方法进行光信号解调。对系统性能进行仿真分析,结果表明,基于激光偏振态参数的调制与解调技术在抗大气环境干扰、提高数据传输速率和降低误码率等方面具有优越性,在未来的空间激光通信领域有广阔的发展空间和应用前景。     

全双工逆向调制回复空间光通信系统性能评价

基于逆向调制反射器(MRR)的空间光通信系统因其结构紧凑、可免去链路一端的捕跟(APT)系统、功耗低等优点,是空间光通信系统研究热点之一。提出采用双波长激光发射实现全双工逆向调制回复空间光通信结构,并基于该结构对强度调制解调模式,通信距离为300 km,通信速率为1 GHz下的地面站对近地小卫星全双工通信链路进行了链路计算及通信误码率的分析。当MRR端口径为0.1 m时,通信链路余量大于5 dB,通信误码率优于10-15,满足通信链路的要求。并进一步分析了仿真结果存在的缺陷。结果表明所提出的空间光通信结构在小卫星对地面站全双工激光通信是可行的,是未来空间光通信系统发展趋势之一。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.