GPS定位技术在航天器高动态导航中的应用问题研究

本文着重讲述了 GPS 系统在航天器动态导航中的应用问题，分析了航天器高动态环境下对 GPS 信号的捕获和跟踪所带来的影响。提出了 FFT 码快速捕获算法，以及二阶 FLL 与三阶 PLL 混合载波跟踪方案，并对码环和载波环的结构和参数的设计方法进行了说明。仿真结果和分析表明该方案能在航天器高动态环境下实现信号的快速捕获，且能较好地满足接收机动态性能和跟踪精度的要求。     

高动态接收机的关键问题研究

为检测高动态GPS(Global Positioning System)信号,需要设计码环及载波环的捕获与跟踪数字系统.在高动态下,在GPS信号的码跟踪和载波捕获与跟踪问题中最关键的是要解决在高加速度下的载波跟踪问题.主要讨论了在高动态下,结合GEC公司的十二通道相关器GP2021,载波跟踪环路的特性并在此基础上提出了一个新的方法来改善载波跟踪环路的性能.     

高动态GPS接收机环路跟踪技术研究

为了解决加速度45g、加加速度10g/s的高动态环境下GPS信号的载波跟踪、码跟踪及其精度问题,提出了一种综合考虑动态和精度性能的载波环和码环优化设计方案,探讨了高动态情况下载波环和码环的结构设计及捕获转跟踪技术,分析了FLL/PLL/DLL环路的动态应力、暂态响应和鉴别器特性,总结了实用的控制策略和环路带宽。该方案经自主开发的软件接收机测试验证,可以在达到很高动态特性的同时满足一定的测距精度和定位精度要求。     

高动态扩频信号的载波跟踪技术研究

针对高动态环境下扩频信号的载波捕获与跟踪问题,本文分析了多普勒频移对锁相环、锁频环以及环路滤波器设计的影响,以及高动态环境中载波快速捕获问题,在此基础上提出了一种数字复合软环的设计方法,计算机仿真结果表明这种数字复合软环能有效地解决载波快捕与精跟踪的问题.     

高动态扩频信号的载波跟踪技术研究

针对高动态环境下扩频信号的载波捕获与跟踪问题，本文分析了多普勒频移对锁相环、锁频环以及环路滤波器设计的影响，以及高动态环境中载波快速捕获问题，在此基础上提出了一种数字复合软环的设计方法，计算机仿真结果表明这种数字复合软环能有效地解决载波快捕与精跟踪的问题．     

基于DSP的高动态接收机载波捕获跟踪技术

介绍了高动态GPS接收机的码捕获与载波跟踪的原理,设计了一种基于高速数字信号处理(DSP)技术的PLL FLL环混合全数字高动态载波跟踪技术方案,同时给出了一种在连续高动态下载波跟踪算法即基于交叠离散傅里叶变换的频率跟踪算法(ODAFC),并对此算法进行了仿真验证.仿真结果证明了该算法的正确性.     

基于最大似然估计的高动态GPS载波跟踪环

 基于最大似然估计提出了一种全新设计的GPS载波跟踪环结构,并将该环路应用于高动态、低信噪比条件下的GPS载波频率跟踪. 文中给出了环路的设计细节,并详细讨论了环路中各模块的功能及模块之间的参数传递. 利用具有典型高动态参数的GPS载波信号对环路的跟踪性能进行了测试. 测试结果表明,与普通GPS接收机的载波跟踪环相比,该环路对高动态环境下的失锁门限和门限附近的频率跟踪精度均有显著改善.     

扩频通信中PN码序列的捕获

扩频信号的捕获与跟踪是扩频接收机进行定位解扩的基础,文中基于FPGA进行了扩频信号捕获与跟踪的设计实现。分析了该方案的匹配滤波器、载波跟踪环、码跟踪环的设计与实现方法。并通过BPSK调制,使用非相干扩频通信的PN码并行捕获算法实现信号的捕获。     

高动态环境载波跟踪环路的设计

为了满足高动态环境下对测轨定位的需求,对数字中频接收机载波同步跟踪关键技术进行了研究。针对高动态环境下载波同步需要解决的捕获带宽、捕获速度与跟踪精度的矛盾,综合利用了传统数字锁频环路和数字锁相环路的优点,设计了一种适合高动态环境下数字中频接收机的锁频联合锁相环工作的环路方案。仿真和测试结果表明:改进算法解决了环路跟踪精度和动态性能不能兼顾的矛盾,信号跟踪环路能在高动态环境中实现对信号的稳定跟踪。     

高动态下GPS接收机载波跟踪技术的研究

针对高动态环境下GPS接收信号的载波捕获与跟踪问题，分析研究了几种适合的GPS信号跟踪的频率估计算法，提出了一种全数字化的高动态GPS接收机载波跟踪技术设计方案，最后通过仿真验证CPAFC算法的正确性。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.