L波段小步进频率合成器的设计

采用了锁相环(PLL)结合直接数字频率合成(DDS)的方法实现L波段小步进频率合成器,分析了此种频率合成器的相位噪声和杂散指标。介绍了具体的电路设计过程。实验测试表明,实现的L波段频率合成器结合了锁相环式和直接数字式频率合成的优点,步进间隔1 kHz,相位噪声在10 kHz处可达-98 dBc/Hz,杂散抑制-70 dBc,具有相噪低、杂散抑制好、步进小等特点。     

低相噪毫米波频率合成器设计

简要介绍毫米波频率合成器的重要性,分析两种毫米波频率合成器实现方案的优劣,综合其优点,并采用直接数字频率合成（DDS）技术,提出毫米波频率合成器的设计方案。进行方案系统实验,结果表明,相位噪声为-85dBc／Hz@10kHz,提升了整个毫米波通信系统的性能。     

超短波跳频电台频率合成器设计

针对超短波电台对频率合成器所提出的指标要求,设计了合成器的实现方案,并依据方案软硬结合实现了一套频率合成器.方案中采用了基于∑-△调制的小数分频技术,既实现了很小的频率分辨率又消除了因小数分频而引起的杂散.实验结果表明,其杂散小于-70 dBc,锁定时间小于150μs,频率间隔为25 kHz.这些性能可以满足超短波跳频电台的指标要求.     

超短波跳频电台频率合成器设计

针对超短波电台对频率合成器所提出的指标要求,设计了合成器的实现方案,并依据方案软硬结合实现了一套频率合成器.方案中采用了基于∑-△调制的小数分频技术,既实现了很小的频率分辨率又消除了因小数分频而引起的杂散.实验结果表明,其杂散小于-70 dBc,锁定时间小于150 us,频率间隔为25 kHz,这些性能可以满足超短波跳频电台的指标要求.     

一种高频谱纯度的C频段宽带频率合成器设计

为了提高频综的频谱纯度,提出了一种新型多级子谐波混频锁相环的设计方法,研制了一款超低相噪频综。介绍了该频综的设计方案,分析了关键技术,仿真和论证了相位噪声和杂散抑制等主要指标,最后对该频综进行了研制和实际测试。测试结果如下：工作频率为4 500~7 600 MHz,频率步进小于1 kHz,相位噪声优于-123 dBc/Hz@25 kHz,频率切换速度小于75 μs,杂散抑制大于70 dB,均满足设计要求,设计方案比较合理可行。采用该方法设计的频综具有小步进、低相噪、换频速度快、低杂散等特点,可用于高性能电子战接收机中,具有广阔的应用前景。     

一种L波段的小步进频率合成器

详细分析了直接数字合成(DDS)和锁相环(PLL)的基本原理、特点及相位噪声特性。将DDS与PLL技术结合,取长补短,可以在不降低杂散性能要求的前提下实现小步进的频率合成器。在此基础上提出了一种DDS+PLL+混频的L波段小步进频率合成器的实现方案。根据方案,选择DDS芯片AD9850和PLL芯片ADF4112来搭建电路。给出了试验测试结果。测试结果表明,在L波段实现了相位噪声-94dBc/Hz@1kHz,杂散抑制-60dBc,频率步进1kHz,验证了该方案的可行性。     

一种S频段高性能频率合成器的设计与实现

设计了一种高性能频率合成器,采用直接数字合成(DDS)与直接模拟合成相结合的方式,实现了S频段1 Hz细步进输出,频率捷变时间小于800 ns,并达到杂散抑制优于-65 dBc、相位噪声优于-115 dBc/Hz偏离载频1 kHz处的高性能指标.     

Ka波段频率合成器设计

提出了一种Ka波段低杂散、捷变频频率合成器设计方案。该方案采用直接数字合成(DDS)+直接上变频的频率合成模式,DDS1产生360~600 MHz低杂散中频信号,DDS2产生波形信号。经过4次上变频、分段滤波、放大后,该方案实现了宽带、低杂散、捷变频频率合成器的设计,为系统提供本振信号、激励信号等。根据设计方案,制作了实物。实测该频率合成器输出杂散小于-75 dBc,频率切换时间小于200 ns,带宽2 GHz,步进1 MHz,35 GHz载波处相噪约-95 dBc/Hz@1kHz。该频率合成器不仅可广泛应用于雷达、对抗、通信等领域,也为其他类似需求频率合成器提供了参考。     

4～8 GHz宽带频率合成器的设计

研究了一种采用ADI公司的ADF4153小数N分频PLL频率合成器芯片来实现宽频带、小步进的频率合成器的方法.ADF4153可以实现无线通信系统接收机和发射机中本地振荡器,他包括低噪声的数字鉴频鉴相器、电荷泵和可编程分频器.该频率合成器频率范围4～8 GHz,步进1 MHz,且在8 GHz输出时,相位噪声低于-85 dBc/Hz@1 kHz.     

短波电台频率合成器设计

本文针对短波电台对频率合成器所提出的指标要求,设计了合成器的实现方案,并依据方案软硬结合实现了一套频率合成器.实验结果表明,其频率分辨率可达100Hz,频率误差小于30Hz,杂散小于-70dBc,可满足短波电台的指标要求.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-