水性红外迷彩涂料的制备及其表征

为探讨水性红外迷彩在篷布上的实际应用,从颜填料和助剂两方面研制了发射率为0.589、0.761和0.953,颜色分别为土黄、翠绿和墨绿色的红外迷彩涂层材料;采用紫外-可见光-近红外分光光度计、红外热像仪、SEM、TG-DTG等手段对该红外迷彩涂料的可见光-近红外隐身性能、红外隐身性能、表面形貌、热稳定性、柔韧性等其他性能进行表征。结果表明:研制的红外迷彩可见光-近红外反射光谱曲线与背景相似,红外热图分割效果良好,涂层表面形貌、稳定性、柔韧性等性能满足篷布使用要求。     

发射率对飞机蒙皮温度及红外辐射特性的影响

建立了某型飞机的简化几何模型,并设置了飞机的飞行航迹。综合考虑了太阳辐射、地球辐射、大气辐射和气动加热的多种因素,结合飞机蒙皮材料物理特性,针对涂覆三种不同发射率的隐身涂层蒙皮建立了导热物理模型,采用一维导热方程计算了飞机在12:00~12:45时间段飞行时不同发射率的蒙皮表面的温度分布。最后综合考虑了环境辐射的影响,分别对具有不同发射率的飞机蒙皮3~5 m和8~14 m两个波段的红外辐射强度进行了数值计算。结果表明:随着蒙皮发射率的减小,在一定程度上能降低蒙皮在8~14 m波段的红外辐射强度,但是因环境因素的影响,仅仅通过降低蒙皮发射率,飞机红外隐身的效果并不理想。     

红外/激光/可见光复合隐身涂料的研究

本文介绍了红外／激光／可见光复合隐身涂料的研制。制备以半导体的无机复合材料为颜料和合适的粘结剂，得到红外隐身和激光隐身兼容的涂料。涂产在８￣１４μｍ波段的红外发射率为０．６￣０．９４，选用不同发射率的涂料，根据需要进行迷彩图案设计，达到很好的红外变形迷彩效果。涂料对１．０６μｍ波长的激光反射率小于０．４％，使激光测距的最大测程较一般军用涂料缩短近８０％。涂料的颜色分不同亮度的绿色和土黄等系列，根据     

红外迷彩伪装涂料发射率对目标伪装效率的影响

伪装效率是衡量涂料的红外伪装效果的重要指标，它取决于涂料本身的红外发射率、特定的环境背景和气候条件等多种因素。在一种典型的南方草地背景下，随着阳光辐射和昼夜环境温度的变化，研究了不同发射率涂料样品的红外伪装效率；并对不同发射率的样品进行组合，研究比较复杂的红外迷彩伪装目标的伪装效率，在此基础上，讨论了发射率对红外迷彩伪装目标的伪装效率的影响。     

飞机成像目标的红外隐身效果评估

评估飞机成像目标的红外隐身效果,对飞机红外隐身技术的发展、隐身反隐身作战具有重要的意义。提出了一种飞机成像目标红外隐身效果的评估方法:结合成像探测器工作原理,考虑图像处理各个阶段的算法特点,基于多种图像特征,制定出能反映背景影响和诱饵干扰影响的飞机成像目标红外隐身效果评估指标;通过建立红外成像探测器仿真模型,验证了所制定的评估指标的合理性;最后依据评估指标评估了采用不同隐身技术和施放诱饵干扰对飞机隐身效果的影响,得到了一些对飞机隐身和反隐身具有指导意义的结论。     

无人机蒙皮红外辐射特征研究

以典型飞翼布局无人机为研究对象,采用流场计算商业软件和自主开发红外计算软件相结合的形式,利用离散传递法计算了全机在8～14 m波段红外辐射强度分布。在红外计算过程中,考虑了发动机固体壁面的发射和反射,飞机蒙皮的发射,燃气内CO2、H2O和CO吸收与发射作用。结果表明:马赫数是影响其8～14 m波段红外辐射特征的重要因素之一;通过冷却、隔热等措施降低后机身发动机热影响区蒙皮的温度或者在机身蒙皮上涂敷低红外发射率材料可以明显降低飞机在8～14 m波段的红外辐射特征,该研究为未来飞行器红外隐身设计提供了参考。     

飞机红外特征研究

红外成像探测和跟踪技术促使飞机红外隐身技术得到了相应的发展。为了达到飞机隐身的目的,首先应对飞机的红 外特性进行研究。本文分析了影响飞机红外辐射特性的主要因素,并从工程计算与实际应用的需求出发,在以往计算方法的基础 上,通过优化比较,给出了一种计算尾流、尾喷管、蒙皮和蒙皮反射阳光的红外辐射的方法。最后通过计算表明,该方法实用可 靠,符合工程计算与应用的要求。     

飞机的红外图像仿真

飞机在高空高速的条件下飞行时,红外图像的获取通常较为困难。为解决这一问题,将整机辐射分解为机体辐射与排气系统辐射两大部分,以经典红外辐射理论为基础,结合传热学及射流动力学工程模型,建立了一种实时性较好的飞机红外图像生成模型。在求解蒙皮表面温度场时,采用求解热平衡方程法,综合考虑气动加热、内热源加热、环境辐射热量与蒙皮向外辐射热量对蒙皮温度的作用。计算排气系统红外辐射时,采用基于包络面的红外辐射计算方法,将尾焰流场计算的工程模型、包络面模型及非均匀气体计算模型相结合。最后利用VC++平台与OpenGL图形库编程生成了飞机的红外图像。仿真图像为成像制导武器的仿真提供了目标源,在成像制导武器系统的评估测试中有一定参考价值。     

基于小波神经网络的红外光谱发射率计算方法

红外光谱发射率是战机蒙皮重要的红外隐身参数之一,为消除大气等外界因素对红外辐射特性测试结果的干扰,建立一种基于小波神经网络的目标红外辐射亮度模型,利用这种模型对测试样本进行网络训练,建立3~5 μm 和8~12 μm 波段红外辐射亮度模型,进而计算不同波长下目标的光谱发射率。通过与标准黑体对比,验证所建小波神经网络模型的光谱发射率与黑体实际的光谱发射率相比,最大相对误差约为2%,并将该方法应用于飞机蒙皮的光谱发射率计算。     

飞机红外隐身及探测技术简介

根据理论方法和调研情况,介绍了 主要的隐形飞机,并阐述了红外探测技术的发展 及其主要的应用领域。在分析隐形飞机的红外辐射之 后,主要对隐形飞机的尾喷管辐射、尾焰辐射以及蒙皮 辐射进行了研究,并针对每一种辐射都给出了具体的红外 隐身方法。最后给出了结论,并期望针对红外隐身技术发展 出更先进的可满足现代军事需求的红外探测手段。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its