金属目标表面温度场对后向散射偏振结构的影响

文章采用基尔霍夫法和微扰法,探讨了表面为大粗糙度表面和微粗糙表面两种情况 下,入射角、金属目标表面温度场对后向散射偏振结构的影响。根据现有条件设计了实验装置,并用该装置测量了部分实验数据,相关结论对激光探测等领域的研究具有一定的参考价值。     

透明物体面形偏振成像测量技术综述

无偏漫射光被物体反射后变为部分偏振光,菲涅尔定律阐明了入射角和反射光偏振度的定量关系。入射面的方位角和反射光的偏振角存在90°的方位差,由此可以获得入射面的方位角。综述了透明物体面形偏振成像测量的研究进展,首先介绍了Lawrence B Wolff提出的反射模型及透明物体反射光类型;进一步介绍了基于镜面反射光偏振特性的透明物体面形偏振成像测量原理,并针对测量中存在的入射角和入射面方位角歧义问题,综述了目前国内外消除入射角和消除入射面方位角歧义的方法。鉴于已有算法均假定反射光线平行于偏振成像系统的光轴,但实际应用中常常不能满足这个假设,为此简单介绍了作者提出的基于向量运算的透明物体面形偏振成像测量方法;最后分析了透明物体面形偏振成像测量进一步的研究方向。     

单层二氧化钛薄膜的偏振散射特性

为了用散射法研究单层薄膜表面粗糙度的变化规律,以光学薄膜矢量光散射理论为基础,分析了单层二氧化钛薄膜分别在完全相关和完全非相关模型下的偏振双向反射分布函数,以及P偏振入射光引起的P偏振的BRDFpp随散射方位角的变化关系。理论研究结果表明:随着散射方位角的变化,P偏振入射光引起的P偏振的BRDFpp强烈依赖于膜层界面粗糙度的相关特性。在完全相关模型下,随着入射角的增加,BRDFpp随着散射方位角变化时所出现的谷值会随着入射角的增加而减小。     

二维粗糙面两束波束散射特性研究

基于Kirchhoff近似,推导两束波束散射强度相关系数的表达式,数值计算漫射强度及散射强度相关系数随角度差、相关长度及粗糙度变化情况。结果表明:散射角对粗糙表面相干散射强度与光滑表面相干散射强度的比值有影响,当两束波束的入射角、方位角均相等,意味着两束波束相互重合且散射强度比值为单波束比值的四倍;当两束波束的入射角、方位角中有一个角度不相等,由散射场干扰效应的影响,相干散射强度比值都会减小。相关长度的变化与漫射强度和散射强度相关系数均成正比;随着入射角度差增大,漫射强度的后向散射效应增强,且散射强度相关系数变小,说明两束波束的干扰越严重;随着散射角的增大,总散射强度受干扰项散射强度影响较大,则后向散射效应增强。     

金属目标后向散射特性与表面温度场关系的研究

本文研究金属目标的后向散射特性与入射角、表面温度场之间的关系。根据现有条件设计了实验装置，并用该装置测量了部分实验数据。相关结论对激光探测等领域的研究具有一定的参考价值。     

入射角对"猫眼"目标特性的影响

激光雷达截面(LRCS)能够综合表征目标激光散射特性,在激光主动探测系统论证设计、探测性能估算中有广泛的应用.从LRCS定义出发,建立了正入射与斜入射条件下离焦"猫眼"目标的LRCS模型,得到了正入射与斜入射条件下离焦"猫眼"目标的探测距离计算公式,讨论了目标LRCS及主动探测距离随入射角和离焦量变化的规律,对入射角和...     

蒙特卡罗方法模拟水云对偏振激光雷达的多次散射去极化

利用激光雷达探测水云的光学和微物理特性时,水云的多次散射会在雷达回波中产生去极化信号,给出了半解析蒙特卡罗方法模拟偏振激光雷达后向散射去极化率的详细过程,给出了0.532μm激光作为光源入射时,典型水云的后向散射Muller矩阵二维分布图,以及水平线偏振、垂直线偏振、+45°线偏振和右旋圆偏振光入射时,后向散射的Stokes矢量的二维分布图,最后给出了去极化率和极化率随激光雷达接收视场角以及穿透深度的变化。从数据结果可以看出,接收视场角越大,多次散射的影响越大。给出的蒙特卡罗模拟方法对利用激光雷达遥感反演水云和球形气溶胶的特性具有重要的应用价值。     

目标反射特性对激光测距的影响

针对非合作小目标激光测距系统,目标表面的反射特征对激光回波信号有很大的影响。建立测量表面双向反射分布函数(BRDF)的装置,对常用的两种热控材料——白漆涂层和F36多包层,测量了其在1064 nm波长下的双向反射分布函数。得出了白漆涂层镜面反射很小,散射角较大,利于各方向接收回波信号;而F36多包层镜面反射很强,散射角-2°~2°,不利于探测。通过由表面BRDF与由朗伯散射计算得到的最小接收功率的比较,得出了入射角大于45°入射白漆涂层时,回波信号较小;大于2°入射F36多包层时,没有回波信号。     

基于光学偏振编码及解码系统的目标识别技术

本文研究了金属目标的后向散射特性与入射角之间的关系 ,为区分目标反射后初始偏振辐射和非偏振辐射 ,讨论了光束偏振编码及解码系统 ,利用该系统能够识别金属及非金属目标 ,这一研究成果对促进激光制导及目标识别具有重要的理论及实际意义。     

粗糙基底上涂层的极化双向反射分布函数

为了有效检测光学基底和镀膜后的光学元件质量,根据微面元电磁散射理论建立了一阶极化光散射模型,推导求解出其极化双向反射分布函数,获得了极化双向反射分布函数PP项与散射角和方位角的三维关系。数值模拟分析了入射角、基底粗糙度及不同涂层厚度对极化双向反射分布函数的影响。数值结果表明:极化双向反射分布函数与入射角、相关长度、均方根高度及涂层厚度均成反比。P极化入射产生的P极化双向反射分布函数强烈依赖于入射角、散射角和方位角。布鲁斯特角的位置随着入射角的增加逐渐向散射方位角小的方向移动。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its