W波段带状注速调管电子光学及注波互作用系统的研究

通过冷流模型理论对均匀场聚焦带状电子注的传输进行了研究,结果表明,通过增强聚焦磁场并提高电子注填充高度因子,可以有效降低Diocotron不稳定性并实现长距离的稳定传输.结合理论研究,对均匀场聚焦带状注电子光学系统进行了三维仿真设计与优化,利用自主开发的二维非线性注波互作用程序SBK2D,对W波段带状注速调管进行了初步分析,结果为输出峰值功率69 kW、效率24%、增益37dB、3dB带宽100 MHz.研制出的具有高机械对准精度的带状注速调管电子束管,带状注截面10 mm×0.5 mm,且在电子注电压20～82 kV,电流0.50～4.27A,长度100 mm的漂移通道内电子注传输直流通过率达到98%以上,高于之前在90 mm漂移通道内获得的95%的实验结果.     

带状电子注聚焦系统设计

通过理论分析、数值模拟和实验研究了PCM 结构聚焦椭圆带状电子注的可行性。利用三维PIC 粒子模拟软 件模拟了椭圆带状电子注在PCM 结构行程的周期磁场中的传输过程,结果显示：截面为10x0.4 mm2 的椭圆带状电子 注在12x0.8 mm2 的矩形通道中稳定长距离传输120mm 无截获。对PCM 聚焦结构的磁场进行了测试,测试结果与数 值模拟结果相符。实验并研究了该PCM 聚焦系统约束带状电子注的能力,测试用速调管的设计电压为75kV,在56.8kV 时的直流通过率达到52.1%,并随着工作电压的升高呈上升趋势。     

基于螺线盘与永磁体聚焦径向电子束的研究

本文首先对径向电子束在浸没式聚焦条件下的传输特性进行了理论分析,得到了束流传输过程中轴向扩张幅值 与外加引导磁场强度关系之间的解析表达式,接下来分别阐述了螺线盘和轴向磁化的永磁环在空间中产生磁场的分布规 律,最后设计了一种基于螺线盘和永磁体混合聚焦径向电子束的引导磁场系统,仿真研究了径向电子束在该引导磁场系 统产生的磁场下稳定传输时的束轨迹。     

强流相对论电子束在PPM系统中的传输特性研究

首先对强流相对论电子束在聚焦系统中的传输特性进行了理论分析,给出了束流参数与周期引导磁场峰值大小的关系,然后通过粒子仿真验证了理论分析的正确性,并得到了在一定的电压和通道半径条件下,周期永磁聚焦(PPM)系统能传输的电子束的最大电流。文章为强流相对论电子束周期永磁聚焦系统的设计提供了一定的参考。     

带状电子注在周期磁场中传输的稳定性

在理论分析的基础上,对带状注在周期磁场中传输的单平面聚焦稳定性进行了数值计算和PIC 程序模拟,验证了带状注在周期磁场中长距离传输的稳定性条件,详细分析了聚焦磁场周期长度对束流稳定性的影响,从而表明Wiggler聚焦磁场适于直流电压较高的束流,小周期长度的聚焦结构要求精确的机械制造。为接近真实的情形,设定漂移管和电子注的横向尺寸有限,而聚焦结构无限宽。本文的理论和仿真研究为设计中采用合适的周期聚焦结构,选用合适的设计参数提供了依据。     

太赫兹FWG-TWT电子光学系统的数值模拟验证

结合实验模型,对0.22 THz折叠波导行波管(FWG-TWT)的电子光学系统进行数值模拟验证。首先对电子枪的工作机制进行细致研究和仿真验证,然后对电子光学系统(包括电子枪和周期永磁聚焦结构两部分)进行一体化建模,结合实际,合理设置仿真模型的工作参数及边界条件等。分析影响电子注流通率的关键因素,调整结构参数和束流参数,提高电子注的直流流通率。     

浸没流多透镜多注电子光学系统的模拟研究

该文采用先2维后3维的计算方法,对L波段高峰值功率多注速调管电子光学系统进行了模拟设计。采用均匀场浸没流多透镜聚焦系统对电子注进行聚焦,获得了通过率100%,填充因子55%,特性良好的旁轴电子注。模拟计算表明,多透镜系统可有效调整电子注平衡半径,电子枪区均匀场可有效调整电子注波动性及层流性,聚集系统可在阴极磁感应强度为0.001~0.01 T,主磁场为0.06~0.13 T的范围内实现对旁轴电子注的良好聚焦。     

多注速调管电子光学系统的研究

本文比较系统地阐述了在多注速调管电子光学系统中开展的研究工作。给出了周期反转永磁聚焦系统的设计方法和设计考虑,讨论了控制极调制多注电子枪设计中遇到的特殊问题和解决方法,建立了计算电子光学系统的二维磁场和电子轨迹计算软件,并应用这些软件设计和研制了S波段200kW多注宽带速调管的电子光学系统。该管输出功率180kW,带宽7.6％,效率44.4％,增益大于45dB,电子注通过率89％,高频通过率69-83％。设计计算与实验结果有较好的一致性。     

多注周期永磁聚焦系统横向磁场的研究

从理论上对多注行波管周期永磁聚焦系统横向磁场的性质以及对电子注聚焦的影响进行了讨论,并借助仿真手段分析了一五注耦合腔周期永磁聚焦系统各电子注通道轴内的横向磁场分布规律,讨论耦合槽结构对横向磁场分布的影响,并对横向磁场造成的电子注偏移进行了粒子模拟。     

行波管长周期永磁聚焦系统的研究

对长周期永磁聚焦系统中电子注的脉动情况进行了系统的研究。在增大磁系统周期的时候,从理论上讨论了高次谐波,磁场参量和空间电荷参量对电子注脉动的影响,最后利用计算机仿真软件OPERA对电子注在长周期磁聚焦系统中的运动进行了模拟。结果表明,理论推导的结果与计算机模拟值相符,可以利用这种方法进行长周期聚焦系统的模拟和设计。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its