DDS输出频谱杂散的抑制

本文简要说明了直接数字频率合成器原理,分析了DDS输出频谱杂散的误差来源,介绍了抖动注入法、正弦查找表的幅度压缩方法和DAC平衡法等DDS频谱杂散抑制方法,详细阐述有关原理和具体实现方法。     

DDS输出频谱杂散的抑制

本文简要说明了直接数字频率合成器原理，分析了DDS输出频谱杂散的误差来源，介绍了抖动注入法、正弦查找表的幅度压缩方法和DAC平衡法等DDS频谱杂散抑制方法，详细阐述有关原理和具体实现方法。     

基于DDS技术正弦信号发生器的设计

为了能够方便地产生波形平滑、频率稳定的正弦信号波形,提出了一种基于DDS技术的正弦信号发生器的设计方法。介绍了DDS技术在波形产生功能电路中的应用,并对FPGA实现DDS功能做了具体的说明。介绍了DDS技术的基本原理,论述了基于FPGA实现正弦/余弦信号发生器和32位序列信号发生器的设计方案。最后,实验结果表明:采用该方法设计的正弦波形发生器输出的波形与传统的正弦波形发生器相比,具有波形平滑、波形稳定度高、频率稳定度和分辨率高等诸多优点。     

基于FPGA的移相正弦信号发生器的设计

正弦信号发生器作为最基本的电子设备,广泛应用于航空航天控制、通信、电子测量、研究等等。本文介绍了基于FPGA技术,根据正弦信号移相原理,利用matlab/simlink/DSP Builder搭建移相正弦信号模型,采用直接数字频率合成技术(DDS),设计实现了一个频率、相位可控的正弦信号发生器。采用此方法设计的数控移相正弦信号发生器能够产生频率、相位均可数字式预置并可调节的正弦波信号,该数字移相信号发生器的频率、相位、幅度均可预置,分辨率高,精确可调,且可分别用作两路独立的信号发生器使用。采用这种方法设计可控移相信号发生器方便快捷,提高了开发效率,缩短研发周期,而且系统的调试方便,容易修改。     

基于DDS和PLL的高性能信号源设计

基于直接数字频率合成技术(DDS),采用FPGA实现对DDS芯片AD9910的控制,提出一种高性能信号发生器的实现方案。重点介绍了DDS基本原理、晶振的选型、抑制DDS的杂散的方法、系统的总体结构以及软件设计。此系统具有高频率、高分辨率、高精度的主要特点,且控制灵活方便,具有广阔的应用前景。     

OFDMA系统上行链路频偏的盲估计

本文介绍了直接数字频率合成技术DDS(Direct Digital Frequency Synthesizers)工作原理,分析了其理想频谱;采用信号分析的方法深入研究了DDS存在相位截断和幅度量化时引入的杂散信号频谱分布的规律和性能;定性讨论了DAC非理想性对DDS输出杂散谱的影响.最后进行计算机仿真分析并验证了结论.所得规律性结论为DDS设计和工程应用开发中的参数选取、杂散评估和杂散抑制提供重要的理论依据和经验参考.     

直接数字频率合成技术杂散信号频谱性能分析

本文介绍了直接数字频率合成技术DDS(Direct Digital Frequency Synthesizers)工作原理,分析了其理想频谱;采用信号分析的方法深入研究了DDS存在相位截断和幅度量化时引入的杂散信号频谱分布的规律和性能;定性讨论了DAC非理想性对DDS输出杂散谱的影响。最后进行计算机仿真分析并验证了结论。所得规律性结论为DDS设计和工程应用开发中的参数选取、杂散评估和杂散抑制提供重要的理论依据和经验参考。     

DDS的杂散分析及降低杂散的方法

对直接数字频率合成器(DDS)的相位截断杂散、幅度量化杂散及非线性杂散的频谱特征和分布规律进行了定性分析,得到相位截断是DDS输出频谱杂散的主要来源.利用得到的结论提出了合理选择时钟频率的方法,用于抑制DDS输出信号中的相位截断杂散,然后探讨了DDS级联设计的方法,用于降低系统设计中DDS输出信号的杂散,最后进行了计算机仿真,证实了本文方法的可行性.     

基于FPGA的DDS正弦信号发生器的设计和实现

利用FPGA芯片及D／A转换器,采用直接数字频率合成技术,设计实现了一个频率、相位可控的正弦信号发生器,同时阐述了直接数字频率合成（DDS）技术的工作原理、电路结构,及设计的思路和实现方法。经过设计和电路测试,输出波形达到了技术要求,控制灵活、性能较好,也证明了基于FPGA的DDS设计的可靠性和可行性。     

基于AD9910的多通道信号发生器

基于直接数字频率合成(DDS)技术,采用现场可编程门阵列(FPGA),通过对DDS芯片AD9910的控制,实现多通道信号发生器的设计。所设计的信号发生器具有高频率精度、低杂散、捷变频的特点,并可编程调整输出频率值以及多路输出信号之间的相位值。实测结果表明,本文所研究的方法和研制的系统是可行、有效的,具有广阔的应用前景。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its