一种U 波段鳍线单平衡混频器的设计

本文介绍了一种U 波段鳍线单平衡混频器的设计过程并给出了测试结果。混频器使用M/A-COM 公司的肖特基势垒二极管MA4E2037,整个电路制作在一块厚度为0.127mm 的RT-Duroid 5880 软基片上。射频端口采用鳍线过渡,本振端口通过波导-微带探针过渡,中频通过SMA 接头输出。测试结果显示,鳍线悬置微带线结构的混频器在本振为42 GHz, 射频在40～60GHz 范围内变化时,其变频损耗小于8.71 dB,本振到射频的隔离度大于25dB。     

250GHz太赫兹谐波混频器设计

太赫兹变频组件是实现太赫兹成像和通信应用的关键器件。本文中介绍了基于hammer-head滤波器紧凑结构,结合肖特结二极管的三维模型和电气模型,设计低变频损耗250GHz太赫兹谐波混频器的方法。在高倍光学显微镜的精准测量下,建立尺寸可以跟信号波长相比拟的二极管三维模型,准确模拟二极管的高频特性以提高电磁仿真精度。为了进一步降低太赫兹混频器的变频损耗,文中除了采用紧凑型的hammer-head滤波器结构外,同时通过波导探针直接实现与二极管阻抗的匹配,简化了混频器的结构降低谐波信号传输线损,从而降低太赫兹谐波混频器的变频损耗。最终仿真结果表明,250GHz谐波混频器在3d Bm的本振功率驱动下,在230~270GHz射频范围内,变频损耗(SSB)均小于6.8d B,最低变频小于6.2d B,中频带宽大于20GHz。     

基于二极管3D精确模型的0.42 THz分谐波混频器

基于电子科技大学与中国电子科技集团第十三研究所自主联合设计的肖特基二极管研制宽带360~440 GHz分谐波混频器。详细描述二极管建模,以模拟在极高频复杂电磁环境中由于二极管结构引入的相关寄生效应.在软件HFSS与ADS中,通过场与路结合的方法对分谐波混频器进行优化.实测结果显示在本振信号为210 GHz本振功率6 d Bm的驱动下,在406 GHz可得到最小变频损耗9.99 d B,在380~430 GHz范围内,变频损耗小于15 d B,在360~440 GHz范围内,变频损耗小于19 d B.     

GaAs MMIC宽带双平衡混频器的研制

采用GaAs肖特基二极管工艺,设计并制造了一款宽带无源双平衡混频器,射频、本振频率为1.5～3.7 GHz,变频损耗小于10 dB,本振到射频隔离度大于35 dB,中频带宽DC～0.8 GHz.该混频器采用了环形二极管和螺旋式巴伦结构,在获得良好的变频损耗与隔离度的同时,显著减小了芯片面积,整体芯片尺寸为1.2 mm × 1.2 mm.     

3 mm单平衡混频器芯片

为满足3 mm收发系统的小型化需求,采用InP高电子迁移率晶体管(HEMT)工艺,设计并制造了一款3 mm单平衡混频器芯片.该单平衡混频器芯片采用了反向并联肖特基二极管对(APDP)和三线耦合Marchand巴伦结构,在获得精确的肖特基二极管非线性模型和巴伦电磁场S参数模型的基础上,对混频器进行了电路设计.最终获得了良好的工作带宽、变频损耗与隔离度指标,在片测试结果显示,该芯片射频、本振频率为82～100 GHz,变频损耗小于9 dB,本振(LO)-射频(RF)隔离度大于20 dB,中频带宽为0.1～18 GHz,整体芯片尺寸为1.1 mm×1.0 mm.     

一种鳍线混频器的设计

研究一种用于近程雷达的毫米波混频器的设计,电路结构上采用简单易于实现的单端混频器结构,通过环行器来实现本振和信号的输入,环行器的功率分配可根据雷达的作用距离来进行设计,采用鳍线结构来实现混频器的匹配输入,通过一个滤波电路来实现中频输出,尽可能地减小混频损耗.经测试,当工作频率为30 GHz时,变频损耗仅为6 dB.     

3mm波段四次谐波混频器阵的研究

采用微带结构研制出3毫米波段8路四次谐波混频器阵。该混频器核心器件采用型号为MS8251的GaAs梁式引线肖特基势垒二极管对。设计了一种便于组阵结构的四次谐波混频器,把混频器分解为反向二极管对模块和双工器模块。反向二极管对模块和双工器模块电路分别设计和安装在厚度为0.127mm和0.254mm的RT/Duriod 5880基片上。实测混频器的最低变频损耗为17dB。     

《固体电子学研究与进展》2001年(第21卷)第1～4期总目次

学　术　论　文期　页新世纪固体电子学发展展望林金庭　 1　 1……………………………………………………………………19W C-波段 MMIC多芯片合成功率放大器陈堂胜　沈　亚　李拂晓　陈效建　 1　 5……………………3mm FM/ CW组件中鳍线混频器的研究胡建凯　黄振起　李宝令　陶若燕　刘墩文　 1　 10……………………………………………………MOSFET中大幅度随机电报信号噪声的动力学特性卜惠明　施　毅　袁晓利　顾书林　吴　军　杨红官　郑有　 1　 14………………………………电荷泵电路的动态分析徐志伟　闵　昊　郑增钰　 1…     

一款集成驱动放大器的低变频损耗混频器设计

采用0.5μm GaAs工艺设计并制造了一款单片集成驱动放大器的低变频损耗混频器.电路主要包括混频部分、巴伦和驱动放大器3个模块.混频器的射频(RF)、本振(LO)频率为4～7 GHz,中频(IF)带宽为DC～2.5 GHz,芯片变频损耗小于7 dB,本振到射频隔离度大于35 dB,本振到中频隔离度大于27 dB.1 dB压缩点输入功率大于11 dBm,输入三阶交调点大于20 dBm.该混频器单片集成一款驱动放大器,解决了无源混频器要求大本振功率的问题,变频功能由串联二极管环实现,巴伦采用螺旋式结构,在实现超低变频损耗和良好隔离度的同时,保持了较小的芯片面积.整体芯片面积为1.1 mm×1.2 mm.     

三毫米波亚谐波混频器研制

采用鳍线结构研制出三毫米波亚谐波混频器.混频的核心元件是反向并联的GaAs梁式引线肖特基势垒二极管对.根据亚谐波混频器对本振、射频和中频网络的要求,先用谐波平衡法分析出反向并联二极管对在本振信号单独激励下的大信号阻抗,由此设计出本振网络.然后模拟出该器件在大信号本振激励下的小信号射频输入阻抗,并由此设计出射频网络.中频网络采用微带线结构实现.该混频器工作在射频92～96GHz,中频8～12GHz,实测带内变频损耗小于19.1dB.     

A high-performance W-band uniplanar subharmonic mixer

A uniplanar subharmonic mixer has been implemented in coplanar waveguide (CPW) technology. The circuit is designed to operate at RF frequencies of 92-96 GHz, IF frequencies of 2-4 GHz, and LO frequencies of 45-46 GHz. Total circuit size excluding probe pads and transitions is less than 0.8 mm ×1.5 mm. The measured minimum single-sideband (SSB) conversion loss is 7.0 dB at an RF of 94 GHz, and represents state-of-the-art performance for a planar W-band subharmonic mixer. The mixer is broad-band with a SSB conversion loss of less than 10 dB over the 83-97-GHz measurement band. The measured LO-RF isolation is better than -40 dB for LO frequencies of 45-46 GHz. The double-sideband (DSB) noise temperature measured using the Y-factor method is 725 K at an LO frequency of 45.5 GHz and an IF frequency of 1.4 GHz. The measured data agrees well with the predicted performance using harmonic-balance analysis (HBA). Potential applications are millimeter-wave receivers for smart munition seekers and automotive-collision-avoidance radars     

70-90 GHz balanced resistive PHFET mixer MMIC

A balanced resistive GaAs high electron mobility transistor mixer monolithic microwave integrated circuit has been designed and fabricated in a production oriented technology. The design is based on a specialised large signal model for linear transistor operation. The conversion loss was 8-10 dB for 70-90 GHz and the noise figure at 100 kHz was 31 dB, which is 11 dB lower than that obtained with diode mixers     

Low conversion-loss fourth subharmonic mixers incorporating CMRC for millimeter-wave applications

Low conversion-loss millimeter-wave fourth subharmonic (SH) mixer designs are proposed in this paper. A millimeter-wave (35 GHz) fourth SH mixer with four open/shorted stubs is designed and measured. The conversion loss is less than 15 dB within a 2.4-GHz bandwidth. The minimum loss is 11.5 dB at the center frequency. By replacing two of the shunt stubs with a dual-frequency in-line stub consisting of newly developed compact microstrip resonating cells (CMRCs), the performance of the SH mixer is improved significantly. At 35 GHz, the conversion loss of this new fourth SH mixer is as low as 6.1 dB with a 3-dB bandwidth of 6 GHz. The conversion loss in the whole Ka-band (26.5-40 GHz) is less than 16 dB. The proposed fourth SH mixer incorporating with CMRCs provides a low-cost high-performance solution for RF subsystem design.     

Temperature dependence of the conversion loss and response time of InSb mixers

The performance of bulk InSb mixers is investigated, A heterodyne experiment has been performed at 69 GHz with IF's varying from 0.4 to 20 MHz. In this experiment the conversion loss was measured as a function of the intermediate frequency (IF) for ambient temperatures in the range 1.5 to 20°K. The IF at which the conversion loss increased by 3 dB determined the response time. Using an electron temperature model, expressions for the conversion loss and the response time are derived by making a small-signal expansion of an energy balance equation. Good agreement between theory and experiment is shown. In this theory the InSb mixer is viewed as a bolometer mixer. An evaluation of mixer performance, stressing operation at ambient temperatures in the 1.5 to 20°K range, is presented. The available tradeoffs between conversion loss and response time as a function of ambient temperature and applied fields are given. Values as low as 11 dB for the minimum conversion loss can be obtained at 1.5°K, where the maximum useable IF is 1 MHz. To obtain a substantially higher IF, such as 10 MHz, the temperature must be increased to 16°K. However, the optimum conversion loss increases at a rate of 1 dB/°K and is 27 dB at 16°K. It is also shown that the device performance of InSb mixers can be predicted satisfactorily from static I-V characteristics and that the best mixer material can be determined by making simple dc measurements.     

基于肖特基二极管的670 GHz四次谐波混频器设计

常温固态太赫兹谐波混频器是太赫兹系统应用中的关键器件。介绍了一款基于肖特基二极管的670 GHz四次谐波混频器的仿真与设计。在高频结构仿真软件(HFSS)中对准垂直结构肖特基势垒变阻二极管进行三维结构建模,采用基于谐波平衡算法的整体综合仿真方法对混频器进行仿真和优化。结果表明：在功率为10 mW的167 GHz本振信号驱动下,混频器单边带变频损耗在637~697 GHz射频频率范围内小于13.8 dB,3 dB变频损耗带宽为60 GHz;最优单边带变频损耗在679 GHz为10.6 dB。     

A monolithic double-balanced direct conversion mixer with an integrated wideband passive balun

This paper presents the design and performance characteristics of a 20-40 GHz monolithic double-balanced direct conversion mixer implemented using InGaP/GaAs HBT process. The compact MMIC mixer makes use of a Gilbert-cell multiplier and utilizes a broadband monolithic passive balun that has been developed for MMIC applications. The new balun makes use of multidielectric layer structure to achieve a broadband performance in a simple coplanar configuration. A measured return loss better than 15 dB, with a maximum insertion loss of 4.5 dB including the 3-dB power splitting loss has been achieved over the band from 15 to 45 GHz. Operated as a downconverter mixer, the newly developed direct conversion mixer achieves a measured conversion gain of 16 dB given an RF signal at 30 GHz, LO drive of 5 dBm and a downconverted baseband signal at 10 MHz. The mixer IP3 occurs at an output power of 4 dBm while the IP2 occurs at an output power of 11 dBm.     

8mm集成环形倒扣混频器设计和研制

用HP ADS软件优化设计了 8mm集成环形倒扣混频器电路 ,在射频频率为 35 .1GHz,本振频率为 35GHz时 ,三端口具有良好的隔离特性 ;计算机仿真最佳本振功率为 6～ 15dBm ,变频损耗小于 5dB .研制了集成倒扣 8mm混频器芯片面积为 3× 3.75 μm2 ,实测结果与设计结果吻合较好     

K-band 3-D MMIC low noise amplifier and mixer using TFMS lines with ground slit

Three-dimensional (3-D) microwave monolithic integrated circuit (MMIC) technology, that incorporates slits in the ground metal, was applied to K-band low noise amplifier (LNA) and I/Q mixer to provide a low cost solution for various K-band receivers such as for P-to-P radio, WLAN, and UWB sensors. The LNA incorporates a quasicoplanar stub in the input-matching network, improving the noise figure by 1 dB. This low-noise amplifier (LNA) exhibits a noise figure of 2.5 dB with an associated gain of 16 dB and an area of 0.75/spl times/0.65 mm/sup 2/. The I/Q resistive mixer incorporates a broadside 3-dB coupler with a 22-/spl mu/m-wide slit in the ground metal beneath the coupled thin-film micro-strip (TFMS) lines (patent pending). The insertion loss of the 3 dB coupler is 0.75 dB. The I/Q mixer exhibits a conversion loss of less than 14 dB at 0.1-2.0GHz IF frequencies for 2-dBm local input power. These LNA and mixer potentially make it easier to integrate receiver functions in a die.