一种中心枝节折叠的新型超宽带滤波器

为了改善超宽带滤波器存在插入损耗较大,带外抑制特性较差等问题。采用中心加载折叠枝节多模谐振器结构,设计了一种新型超宽带滤波器。改变该滤波器多模谐振器的参数,可调节谐振器的谐振频率。该滤波器整体性能良好,具有结构紧凑,尺寸小,插入损耗小及带外抑制特性好等优点。仿真结果表明,该滤波器的中心频率为6.85GHz,通带为3¹0.7GHz,实现相对带宽112%。实物测试结果与仿真结果基本一致。     

基于枝节加载谐振器的新型三频带通滤波器设计

提出了一种新型平面三频带通滤波器,该滤波器由一个加载短路枝节的阶梯阻抗谐振器,一对加载开路枝节的背靠背E型谐振器,以及包含源负载直接耦合的馈电结构组成.所采用的枝节加载谐振器的多模工作特性使滤波器的体积大大减小,同时每个通带的位置及其耦合特性都能够独立调谐.另外,通过源负载直接耦合引入通带两侧的传输零点,实现了滤波器良好的频率选择性.最后设计并加工了一款高选择性小型化三频带通滤波器,其三个通带的中心频率分别为2.0GHz,3.95GHz和6.35GHz,插入损耗均小于2.5dB,带内回波损耗均优于14dB,实验结果与仿真结果吻合良好.     

基于E型谐振器的三陷波超宽带带通滤波器

针对超宽带系统中存在窄带信号干扰的问题,提出了一种加载E型谐振器的多模谐振器(Multimode Resonator,MMR)结构,采用内嵌开路枝节的方法设计了一款三陷波超宽带滤波器,并且通过调节内嵌开路枝节的长短,实现了双陷波的性能。该超宽带带通滤波器通带频带范围为3. 1~10. 2 GHz,通带内插入损耗小于1 d B,相对带宽为107%。其中,实现的三陷波滤波器的三个陷波中心频率分别为3. 8,5. 1和6. 6 GHz。通过调节内嵌开路枝节的长短,可以实现双陷波到三陷波之间的转换,仿真结果与理论分析一致。     

基于枝节加载的超宽带滤波器的设计

本文提出了一种具有新型枝节加载谐振结构的超宽带滤波器,具有良好的超宽带特性,其3dB带宽为2.65GHz-10.95GHz,并且通带内3.18GHz-10.46GHz的范围内S11>20dB。通过仿真的结果可以表明使用本文采用的枝节加载形式,可以实现滤波器良好的的选择性以及阻带特性。     

基于缺陷地面结构的超宽带微带滤波器的设计

针对传统的超宽带滤波器存在陷波深度不足的问题,基于新型缺陷地面结构和加载枝节的方法设计了一款超宽带滤波器.该结构通过内嵌、折叠开路枝节来形成双陷波带,在保证尺寸紧凑的同时实现了对陷波的需求.为了保证陷波深度,在超宽带滤波器两端加载了不对称倒T型枝节.通过刻蚀新型缺陷地面结构来增强带外抑制特性以及陷波深度.该滤波器工作频...     

基于加载谐振器的陷波超宽带滤波器的设计

采用加载谐振器结构,设计了一款在8 GHz处具有陷波特性的超宽带滤波器,有效地避免了X波段卫星通信系统(7.9~8.395 GHz)的连续波对超宽带通信系统的干扰。在三模谐振器的基础上加载中心加载谐振器,通过调整加载谐振器的参数对陷波频率进行调控,使得滤波器在超宽带范围内产生陷波。利用HFSS进行仿真后结果表明,该超宽带滤波器的通带在2.5~10.3 GHz,通带范围内插入损耗在0.9 d B左右,带外衰减十分陡峭。其陷波中心频率发生在8.19 GHz,在陷波频段(7.98~8.40 GHz)范围内最小插入损耗低于–7 d B,具有良好的抑制水平,整体性能表现优良。实际测试结果与仿真结果基本一致,性能指标能够达到设计要求。     

三陷波微带超宽带滤波器设计

旨在解决超宽带滤波器存在的尺寸偏大、陷波个数不足的问题,采用改进的多模谐振器以及新型缺陷接地结构,提出了一种具有三陷波和较好选择性的微带超宽带滤波器.设计谐振器在阶梯阻抗谐振器两侧和下方加载枝节,构建了超宽带滤波器的通带和两个陷波,并设计缺陷地面结构,在增加陷波的同时对陷波特性加以改善.经仿真显示,该滤波器通带带宽为2...     

基于枝节加载开环谐振器的带阻滤波器设计

提出了一种具有良好谐波抑制功能的双枝节加载开环谐振器,加载枝节采用均匀阻抗结构,与同尺寸的开环谐振器相比,结构更紧凑,能够更好地抑制寄生模,而且可以达到更低的谐振频率。分析了加载枝节参数对带阻滤波器抑制二次谐波的影响。通过在加载的双枝节间引入集总可变电容,可以使谐振器具备谐波抑制性能的同时,实现中心频率可调的功能。基于双枝节加载环谐振器设计出一种可调带阻滤波器,中心频率可以在900MHz ~2. 65GHz 范围内调节,而且最低寄生阻带能够抑制到8GHz。     

具有双陷波特性的超宽带带通滤波器

采用修改的多模谐振器(MMR)结构,通过输入输出端开槽形成交叉耦合,实现了一种结构紧凑的超宽带(UWB)带通滤波器。修改的多模谐振器在通带中能产生两个奇模、三个偶模,加载的阶跃阻抗开路枝节在通带的两边产生两个传输零点,提高了边缘选择性。同时在滤波器下方耦合双模阶跃阻抗谐振器形成具有双陷波特性超宽带带通滤波器,利用HFSS13.0验证。结果表明:该滤波器通带在2.61~11.21 GHz,其陷波频率分别发生在5.61,7.81 GHz,能有效抑制WLAN和X频段卫星通信系统对超宽带通信系统的影响,可适用于超宽带无线通信系统。     

基于枝节加载半波长谐振器的准椭圆函数带通滤波器设计

为了在较宽的频率范围内得到较高的带外抑制性能,提出了一种基于微带技术的新颖紧凑型准椭圆函数带通滤波器,该滤波器设计采用了枝节加载的半波长谐振器,具有电磁耦合谐振结构,谐振结构以交叉方式耦合到输入和输出馈线,由于枝节的存在会产生扰动,所以需要谐振器作为多模设备。此外,枝节引入了两个传输零点,以显著提高滤波器的通带选择性并抑制谐波和杂散,使用标准PCB技术对提出的滤波器进行实际制造和测试。结果显示,滤波器可以产生宽带响应,插入损耗低至 0.74ｄＢ,回波损耗大于20ｄＢ,且带外抑制在2ＧＨｚ~ 4.5ＧＨｚ和5.8ＧＨｚ~ 16ＧＨｚ范围内大于40ｄＢ。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its