OCDMA频域/时域的新型线性组合编码

提出了一种适合于光码多分址(OCDMA)频域／时域(λ-t)的二维线性组合码(LCC)新的构造方法,设计了编／解码方案,分析了系统性能。研究表明：影响LCC性能的参数主要有其子码字数和码字中相同子码字的个数。随着LCC的子码数的增加,OCDMA系统的用户容量显著提高;通过改变LCC的设计参数,系统的误码率(BER)得到改进,当LCC的子码字数确定时,BER随系统中LCC码字中相同子码字的个数的最大值的增加而劣化;当LCC码字中相同子码字的个数的最大值一定时,BER随LCC的子码字数的增加而得到改进。     

基于改进LSOOC的SAC-OCDMA通信系统性能分析

提出了一种基于改进的latin方阵光正交码(MLSOOC)、适合光谱幅度编码(SAC)光码分多址(OCDMA)系统的地址码构造方法,码字间有理想的互相关,容量达到了SAC的上限.分析了SAC编解码的原理、光纤Bragg光栅(FBGs)谱幅编解码的工作过程及在考虑相位引起的强度噪声(PIIN)、热噪声和散弹噪声情况下的系统信噪比(SNR)和误码率(BER).结果表明:在光源和信道理想条件下,多址干扰(MAI)可以消除;在考虑噪声的情况下,可以有效抑制PIIN减小BER;在满足一定BER下,系统承载的同步上路用户多容量比用Hadamard码大大增加.     

一种基于素数码和单重合序列的二维光正交码

以素数码(PC)作为时间扩频伪随机序列,以单重合序列(OCS)作为波长跳频伪随机序列,构造了一种新的二维光正交码(OOC)PC/OCS,并分析了码字的互相关性能.与素数跳频码PC/PC相比,PC/OCS的波长数并不局限于素数,可以是任意整数,不仅构造灵活,而且可充分利用多波长光码分多址(MW OCDMA)系统的有效波长数.当系统的有效波长数为大于某个素数的整数时,PC/OCS不仅码字容量大于PC/PC,而且互相关性能也有所改善,降低了MW OCDMA系统的误码率(BER).     

基于超结构光纤光栅的混沌序列OCDMA系统

提出了一种双极性编解码的光码多分址(OCDMA)系统,采用混沌序列作地址码,并使用超结构光纤布拉格光栅(SSFBG)作编/解码器。三阶Chebyshev映射能够产生具有良好相关性且适用于异步CDMA系统的双极性混沌序列,通过对三阶Chebyshev映射赋予一定初值,并进行反复迭代,得到一定长度的双极性混沌序列。根据地址码的特征,通过控制FBG的折射率分布形成SSFBG,利用SSFBG产生相应的双极性混沌序列作OCDMA系统的编/解码器。对系统性能进行了定量分析,在完全异步的情况下,推导了信噪比(SNR)与误码率(BER)的表达式。仿真分析了系统在不同码长下的BER随接入用户数的变化,并和使用Gold序列的情况进行了比较。结果表明,随着码长的增加,在接入用户数一定的情况下,系统具有较低的BER;由于混沌序列良好的自互相关性,相应的混沌序列OCDMA系统与使用Gold序列的系统相比具有较低的BER,并可以容纳更多的用户数。     

异步相干扩时光码分多址系统的干扰性能分析

从码字的非周期互相关函数出发,分析异步相干扩时光码分多址(OCDMA)系统的多址干扰(MAI)和差拍噪声(BN).干扰用户不同的传输时延,非周期互相关强度均值随之变化,差拍噪声和多址干扰也随之变化.给出了差拍噪声和多址干扰与非周期互相关强度均值的关系,讨论了异步相干扩时OCDMA系统的误码率(BER)与非周期互相关强度均值的关系.最后,以码长511的Gold码为例,针对干扰用户之间不同的传输时延,得到了异步相干扩时OCDMA系统的误码率上界与平均误码率性能.在平均误码率情况下,OCDMA系统能支持12个干扰用户,而在最差情况下(误码率上界),系统容纳的干扰用户数不超过4个.     

采用光硬限幅器和RS码的多波长OCDMA性能分析

提出了一种采用多个光硬限幅器和RS信道编码的多波长光码多分址（MW OCDMA）系统,理论分析了其误码率和（BER）和归一化吞吐量性能.结果表明,采用光硬限幅器的MW OCDMA系统BER性能将明显改善,进一步采用RS信道编码后,MW OCDMA系统BER性能将大大改善.另一方面,采用光硬限幅器的MW OCDMA系统的归一化吞吐量明显提高,特别是归一化吞吐量峰值提高了约1倍,但进一步采用RS信道编码后,MW OCDMA系统的归一化吞吐量并没有提高,在系统负载量不是很大的情况下还略有下降.     

基于OOC的WDM+OCDMA系统性能研究

基于光正交码,研究了WDM+OCDMA系统的性能。采用4个波长信道和3个码字的光正交码OOC(37,4,1),对12个用户的WDMA+OCDMA进行了系统仿真,用户数据速率为1Gbit/s,单模光纤长为50km,色散补偿光纤长为5km。如需增加WDMA+OCDMA的用户数,可以通过增加波长信道数或码字容量来实现。分析了色散效应对WDMA+OCDMA系统性能的影响,研究了用户之间相对延时对多址干扰和系统性能的影响。     

WDM/OCDMA混合系统中一种新型的接收机

文章针对波分复用/光码分多址(WDM/OCDMA)混合系统中存在窄带干扰(NBI)的问题,提出了一种新颖的用户接收机模型.从理论推导得知,该方案能完全滤除WDM用户间的NBI.同时,仿真结果也验证了系统的误码率(BER)有显著的降低,系统性能得到了改善,且归一化门限值为0.28时,BER最小.     

混沌多值序列用于光码分多址系统的性能分析

针对光码分多址(OCDMA)系统对地址码的要求,提出了一种利用3阶Chebyshev混沌多值序列编码的方案,给出了码字的生成方法;基于相移超结构光纤布拉格光栅(SSFBG)编/解码器,利用传输矩阵法仿真分析了系统相关特性与码字长度、量化级数的关系.结果表明,多值混沌序列用于OCDMA频谱相位编码是可行的.     

基于STOOC的SAC-OCDMA系统地址码的性能分析

分析了STOOC码字的设计方案及码重、互相关性、系统容量等性能,仿真出几种适合SAC-OCDMA系统码字的多址干扰误码率与并发用户数的关系,结果表明:STOOC码字容量达到了SAC的上限;STOOC码字的编解码比其它几种码字更容易,且非常适合光谱幅度编码(SAC)光码分多址(OCDMA)系统;得出了在STOOC码字的系统多址干扰误码率比其他码字小,在一定误码率要求下,STOOC码字比其他码字可以承载更多的并发用户。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its