移动IP支持组播的技术

组播（Multicast）是指源一次发送的数据报被送到多个目的地，用来支持点到多点和多点到多点的通信。移动IP作为未来Internet的一支主力军，需要支持组播。本文回顾了移动IP和IP组播技术，分析了几种移动IP支持组播的机制，并对这几种机制进行了比较。     

IP网络组播技术的新发展

本文综述了IP网络中组播实现体制和技术的新发展。首先．对在IP层实现组播的体系结构——IP组播进行了深入的探讨，分析、比较了IP组播两种业务模型——标准业务模型和确定源节点业务模型，讨论了IP组播存在的问题和发展趋势。接着，对应用层实现组播的体系结构进行了讨论，描述了应用层组播体制的主要功能和机制，对主要的几个应用层组播方案进行了比较，探讨了应用层组播体制的优缺点。最后对未来Internet中组播业务的实现提出了一些看法。     

移动IP网络中的组播技术研究

主要讨论了基于移动IP网下的组播技术。在给出了基本的两种移动组播机制：即远程签署RS和双向隧道BT的基础上，重点分析了RBMoM协议，即基于范围的移动组播协议，同时比较了三者的优缺点。最后给出RBMoM协议的实现流程图。     

一种基于MobiCast的移动IP组播方案

本文提出一种改进的MobiCast方案来实现移动IP组播通信,主要解决MobiCast方案中进行区域间切换时组播数据包丢失问题。与MobiCast方案相比,在区域外地代理(DomainForeignAgent,DFA)处引入一种缓存的机制。当移动节点发生区域间切换时,移动节点的旧区域外地代理采用隧道技术,将移动节点的信息和缓存的组播数据包发送给移动节点的新区域外地代理处,减少移动节点进行区域间切换时丢失的组播数据包。     

基于移动接收节点的IP组播技术研究

本文分析和研究了当接收节点处在移动环境中时进行IP组播的各种方案,以移动特有的问题为背景,着重讨论了如何综合考虑在组播应用中支持移动接收节点;并对支持组播接收节点移动的各种方案进行了归纳和总结。     

IP组播密钥管理技术研究

为了在IP组播中实现用户身份认证等安全管理,避免IP组播中的不安全因素,提出了一种运用门限技术和椭圆曲线密钥体制相结合的方案,构建一个IP组播服务系统并在其上分层实现了组播密钥的分发与恢复。最后通过实验测试给出了此方案的管理代价,证明了此方案可以很好地实现IP组播应用中的密钥管理,有效地解决了用户身份认证和授权管理问题,实现了安全IP组播。     

移动因特网及移动IP中的组播技术

移动因特网是因特网和移动通信网未来发展的一个重要方向。本文从因特网协议的层次出发,分析了移动因特网的无线物理和数据链路层、移动IP层等的特点,分析了几种移动IP支特组播的机制。比较了它们与有线因特网层次之间的区别。     

河南电信宽带IP网组播试验

结合组播基本原理和河南宽带IP网现状，介绍了河南宽带IP网的组播实现方案及需要考虑的问题，并详细描述了该组播方案的验证性试验。     

IP组播技术介绍

IP组播技术是向组播组成员发送数据包以到达目的的网络或主机的技术，作为IP网上的一种增值业务和技术，IP组播技术正得到越来越多的重视。将围绕目前应用比较广泛并有很强代表性的IP组播技术协议PIM－SM和IGMP进行介绍，以便能够使读者对IP组播技术有一个很好的了解。     

采用组播技术实现Mobile IP功能

详细介绍了Internet中的组播技术和Mobile IP技术，认为它们是两种关系比较特殊的技术。提出在现有的条件下，可以采用组播技术来实现MobileIP功能，具体介绍了一种采用PIM－SM来实现基本的MobileIP功能，切换和路由优化的方案，并分析了其性能。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its