基于弯曲光纤的折射率传感器研究

以标准单模光纤(SMF)在弯曲后出现的模间干涉为 基础,设计了一种新型的折射率光纤传感器,并分 别对环境折射率和温度进行了实验探究。光纤折射率传感器制作工艺简单,传感区域由一根 具有特定弯曲 半径的半圆形标准SMF构成。选取1510590nm波段为监测范围,选取裸光纤弯曲半径R=4.5mm; 在常温下,通过改变传感区周边环境折射率从1.328增长到1.372,得出两个干涉共振峰的 折射率灵敏度 分别为147.602和125.459nm/RIU。当环境温 度从23到33℃增长时,两峰的温度灵敏度 分别为－280pm/℃;而在低于23℃的情况下,温度的变化对传感器没有明显的影响,可以实现 温度不敏感的折射率测量。本文传感器制作方法简易、架构简单和灵敏度高,可适用于生化 检测、环境检测等领域。     

基于长周期光纤光栅和蝶形锥的光纤横向压力传感器

提出一种基于长周期光纤光栅(LPG)和蝶形锥(BTT)的光纤横向压力传感器。传感器是由LPG 和一 段单模光纤(SMF)熔接而成,其特点是在熔接处会形成一个BTT。实验中,横向压力作 用在LPG上, 干涉谱共振波长强度随横向压力的变化而变化。当横向压力从0.000 增加到1.225N/mm时,传感器的灵敏度 达到－10.476dB/(N/mm),是目前类似传感器灵敏度的2倍左右。本 文传感器具有灵敏度高、成本低和结构简单的优点,具有广阔的应用前景。     

基于单侧几何形变结构的全光纤Michelson干涉高温传感器

利用CO2激光脉冲对标准单模光纤(SMF)单向形成较小的几何形变,把部分基模能量耦合到光纤包层,制作了一种新型的在线型Michelson干涉传感器。理论分析了这种几何微扰激发的包层模特性,并利用芯模-包层模较大的热光系数差,把这种传感器应用于高温测量。实验结果表明,这种干涉传感器的温度灵敏度为0.093 7nm/℃,并且在800℃温度范围内具有良好的线性和重复性。这种制作简单、结构稳定、体积小和灵敏度高的全光纤在线型Michelson温度传感器将具有较大的潜在应用价值。     

基于七芯光纤的迈克尔逊干涉型光纤温度传感器

为了实现对环境温度的精确测量,提出了一种基于七芯光纤(seven-core fiber, SCF)的迈克尔逊干涉型温度传感器。该传感器由单模光纤(single mode fiber, SMF)和SCF熔锥构成,当光由SMF进入SCF时,由于光纤直径的急剧变小,在光纤细锥区域会激发出SCF中的高阶模,这些高阶模与纤芯基模经SCF端面反射后,再次回到细锥区域时发生干涉,并经由SMF输出。制作了不同长度SCF的传感器样品,并分别进行了温度传感实验研究。温度响应实验结果表明,在20—160℃温度范围内,长度为47 mm的传感器的温度灵敏度为0.127 4 nm/℃,拟合线性系数为0.998 3,温度测量分辨率为0.007 8℃,稳定性实验测得传感器的测量标准偏差为0.289 6℃。该温度传感器结构紧凑、易于制作、成本低廉、灵敏度高且测量范围大,在温度监测领域具有一定的应用潜力。     

基于马赫-曾德尔干涉的温度和应变同时测量的光纤传感器研究

提出了一种基于马赫-曾德尔干涉的温度和应变 双参数同时测量的光纤传感器,其结构是在单模光纤(SMF)上分别熔接两 个球形结构并在SMF光纤中间熔接一段细芯光纤(TCSMF)。利用光纤的纤芯 模、包层模对温度、应变的灵 敏度差异,通过检测不同级次的干涉谷的特征波长位移变化,结合敏感矩阵实现了对温度、 应变双参数的 同时测量。实验选取位于波长1545.1nm554.8nm处的干涉谷进行温度和应变的同时测量,测 得两个波谷 的温度灵敏度分别为53.86 pm/℃和47.51pm/ ℃,两个波谷的应变灵敏度分 别为0.75 pm/με和1.39pm/με,并且不 同级次干涉波谷的波长位移量与外界温度和应变具有良好的线性度。     

基于光纤锥和多模渐变光纤的马赫-曾德尔干涉仪的传感特性研究

提出了一种基于光纤锥和纤芯失配光纤结构的马赫-曾德尔干涉(MZI)传感器。在距离单模光纤(SMF)锥25mm处熔接一段长30mm的多模渐变光纤(GI MMF),形成SMF-光纤锥-SMFGI MMF-SMF结构。其中,光纤锥起到增加包层模能量的作用,GI MMF为传感臂。传感器外界环境温度、折射率及应力的改变都会使传感器的纤芯基模和包层模的光程差发生改变,从而引起传感器干涉谱发生变化,通过监测干涉谱的变化可以实现对外界物理量的测量。实验研究结果表明,当环境溶液温度在30~89℃范围内变化时,传感器的温度灵敏度为78.6pm/℃,线性度为0.997;环境溶液折射率在1.333~1.394变化范围内,传感器的折射率灵敏度为81.48dB/RIU,线性度为0.989;轴向应变在0~933.3με变化范围内,传感器的应变灵敏度为0.33×10-2 dB/με,线性度为0.998。本文传感器可以实现多个物理量的同时区分测量。     

细芯光纤M-Z干涉传感器多参数测量研究

实验制备了基于细芯光纤(TCF)的马赫-曾德尔干 涉仪(MZI)并进行了多参数测量传感研究。 传感器采用两段单模光纤(SMF)进行腰椎放大连接细芯光纤,形成MZI结构。利用TCF与SMF 的纤芯直径不匹配,在第1个接点激发出包层模式,包层模在第2个接点耦合进纤芯与纤芯 模产生 干涉,利用干涉条纹的波长漂移实现对外界环境参量的测量。实验所用的TCF纤芯的掺Ge浓 度较高(约为38mol.%),相对折射率和热光系数较普通SMF大,所以在保证 适当的自由光谱范围(FSR) 的前提下,TCF的长可以减小到2mm,传感头尺寸较小,且传感结构对于温度的变化十分 敏感。 实验结果表明,在30～250℃的温度范围内,其温度灵敏度为70.2pm/℃,并具有较好的线 性响应度。测试了传感器对折射率、应变和弯曲的响应,获得的灵敏度分别为－8. 12nm/RIU、1.8pm/με和2.07nm/m－1。     

腰椎放大细芯光纤传感器实现折射率/温度同时测量的研究

根据马赫-曾德尔干涉(MZI)原理,在两段标准单模光纤(SMF)中间腰椎放大熔接长为2cm 的细芯SMF (TCSMF),构成光纤传感器。利用TCSMF的包层模、纤芯模对折射率和温度的灵敏度差异, 通过检测透 射光谱中不同级次的干涉谷的特征波长变化,结合敏感矩阵实现对折射率/温度的双参数同 时测量。实验选取 在1502.54nm波长处干涉谷的折射率和温度的 灵敏度分别为270.5171nm/RIU(其中RIU为折射率单位)和19.3 pm/℃;在1521.64nm波长处干涉谷的折射率灵 敏度为239.510nm/RIU,对温度不敏感。根据 0.01nm波长分 辨率的光谱仪(OSA),本文光纤传感器对折射率和温度的分辨率分别为3.6966×10－5 RIU 和0.518℃,也可以应用于其他参数的 测量,具有良好的应用和发展前景。     

基于腰椎扩径熔接马赫-曾德尔干涉仪的温度光纤传感器

实现了一种基于腰椎扩径熔接马赫-曾德尔(M-Z )干涉仪的温度光纤传感器。通过腰椎扩径熔接技术,分别对4.5cm 长的单模光纤(SMF)两端进行扩径,构成球形-单模-球形结构的M-Z干涉仪。该干涉仪具 有温 度敏感特性,因外界环境温度的变化会引起光纤包层模的有效折射率发生变化,从而导致干 涉光谱的变化。 通过检测同一级次干涉谷的特征波长漂移,实现对温度的测量。实验结果表明,在温度变化 范围为15～60℃ 时,干涉谱发生了明显的红移现象,传感器相应的温度灵敏度为0.068nm/℃。本文温度光纤传感器结构简单、成本低和灵敏度高,在温度检测方面具有良好的 应用前景。     

基于表面温敏薄膜的锥形双包层光纤温度传感器

提出了一种基于温敏薄膜的锥形双包层光纤(TDCF)温度传感器,其由两段普通单模光纤(SMF)之间熔接一段TDCF组成,呈SMF-TDCF-SMF结构。由于输入端SMF纤芯模的模场与TDCF纤芯模的模场极度不匹配,因此由SMF传输过来的光除一部分耦合进TDCF的纤芯中外,其余部分耦合进TDCF的包层中以包层模的形式向前传输。当这两束光到达输出端SMF时发生干涉,形成马赫-曾德尔干涉仪。在锥区涂覆一层温度敏感薄膜,使得TDCF纤芯模和包层模之间的光程差会随着外界温度的变化而改变,从而引起传感器干涉谱的变化,因此可以通过检测传感光谱的变化实现对温度的测量。实验研究了传感器的温度特性,结果表明:随着拉锥长度的增加,干涉光谱的自由光谱范围逐渐减小。当拉锥长度为16mm,温度在32~65.3℃范围内时,随着温度的增加,传感器的传输光谱出现蓝移现象,温度灵敏度最高可达-1296.78pm/℃,且具有很好的线性度。该传感器制作简单、灵敏度高,在科学研究和工农业生产的温度测量场合具有较好的应用前景。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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