微型反射式横向位移光纤传感器研究

提出了一种测量横向位移的微型反射式光纤传感器，可用于测量物体相对传感器轴线垂直方向的微位移变化量。从光纤出射光场的光强分布函数出发，用数值积分的方法求解出了反射式横向位移传感器的光强调制曲线，进而设计了光纤传感探头和电路。结果表明，传感器的测量线性范围是1mm，分辨率达lμm。     

基于光反射原理的油罐液位测量系统的研究

介绍了一种以新型光纤压力传感器为基础的油罐液位测量系统,该系统以光纤传感器作为探头,由单片机系统进行数据分时采集,完成被测信号的识别和比值运算、数据处理、显示及越限报警功能。     

光纤微弯压力传感器

利用微弯传感器和具有硬中心的小位移平膜片设计而成的光纤微弯压力传感器,可以用来测量气体或液体的压力。气体或液体的压力作用在平膜片上,使得平膜片的硬中心产生微小位移,通过微弯传感器使得光纤中传输光产生损耗。检测输出光的变化,经光电转换及放大,运算,调理电路,从而获得压力的大小。     

基于光纤压力传感器的管道监控系统研究

针对运输管道埋设于土壤中面临的泄漏或堵塞点难发现、难定位的问题,结合光纤压力传感器高灵敏度、高抗干扰的特性,设计了一种基于光纤压力传感器的管道监控系统。系统采用包覆有合适热膨胀系数材料的单模光纤组成的偏振型压力传感器,能很好地克服外界环境温度扰动;采用模块化设计的压力敏感探头以20 m间距均布于管线上,形成信号点阵列源;结合点阵列数据重构与插值定位算法确定故障点的位置。结果表明:该系统的光纤压力传感器可有效克服温度变化对传感测量的不良影响,5.5 km范围内对故障点的定位精度在1 m内。     

MEMS双光纤位移声传感器设计与分析

提出了一种新型强度调制型光纤传感器的理论模型。该模型使用单模光纤,讨论了光在准直透镜中的传播规律,利用光学透镜的准直作用,即矩阵光学原理和高斯耦合理论实现光强调制。强度型光纤传感器采用微电机系统MEMS结构的压力振动膜片拾取振动位移,通过分析施加在膜片上压力的变化及膜片尺寸得到影响双光纤位移传感器灵敏度的相关参数。仿真结果表明:合理的选择参数可以使传感器的灵敏度在不增加结构复杂性的前提下较传统方法有103量级的提高。     

光纤水听器梭形封装结构灵敏度分析

提高光纤光栅传感器响应灵敏度是提高光纤光栅传感系统检测精度的有效途径之一。聚合物封装是一种简单,有效的光纤光栅保护以及压力增敏方案。文章对采用梭形封装的光纤光栅水听器探头的压力传感特性进行了研究,基于有限元软件ANSYS,对不同聚合物材料所获得的传感效果进行了比较。分析结果表明一定材料的梭形结构压力灵敏度比裸光纤的提高了约200倍。     

多参量一体化光纤传感器及标校系统的研制与开发

提出一种集温度、压力和流量多参数同时测量的新型光纤传感器,并对其原理和结构、工艺设计展开研究工作。采用靶式与悬臂梁结构相结合的机敏结构、薄壁压力应变筒结构等集成在同一传感器探头上,并利用四只光纤光栅使得温度、压力和流量三个参数得以同时检测。利用光纤光栅两两之间波长移动量相差或相和,使温度与流量、压力交叉敏感问题得以解决。同时开发了光纤传感器标校系统,这一系统可以较准确实现对所研发的多参量一体化传感器的测试结果进行检测和标校。     

一种用于真空度测量的光纤传感器

介绍了一种用于测量真空度的光纤传感器,该传感器利用参考腔室中金属薄膜随系统真空度变化而产生线性形变的原理,采用一对450μm芯径的光学光纤分别做发射与接收光纤,通过测量基于光纤和金属薄膜的相对位移对反射光强信号的调制量,来确定真空度的变化。给出了该传感器探头的结构设计,并通过实验确定了光纤的最佳排列方式及初始位置。实验表明,在一定条件下该传感器所测得的反射光强信号和真空度的变化呈线性关系,并且具有良好的重复性。     

新型反射式光纤位移传感系统的研制

普通反射式光纤位移传感器的测量范围小，若用单片机对不同类型光纤位移传感器的输出信号进行处理，可研制出一种测量范围的新型的光纤位移传感系统。     

新型反射式光纤位移传感系统的研制

普通反射式光纤位移传感器的测量范围小，若用单片机对不同类型光纤位移传感器的输出信号进行处理，可研制一种新型光纤位移传感系统，使测量范围得以扩大。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its