二次多项式拟合在分布式光纤传感中的应用

基于布里渊散射的分布式光纤传感中温度和应变与布里渊频移成线性关系,为了提高温度和应变测量的准确性,提出了一种改进的二次多项式拟合算法用于提取布里渊频移。该算法分为两步:首先使用一种改进的中值滤波算法对含噪布里渊谱信号进行预处理,以提高增益峰值定位的准确性；然后截取围绕峰值左右对称的一个线宽的原始布里渊谱进行二次多项式拟合以实现布里渊频移的高精度提取。以布里渊频移误差及峰值定位准确性作为衡量指标,比较研究后确定同一频率下所有空间点对应的布里渊增益作为滤波器的输入。研究了不同扫频间隔和信噪比及不同滤波窗长下改进算法的效果,同时研究了最优窗长的选择问题。结果表明,不同信噪比和扫频间隔下改进算法均能有效提高布里渊频移提取的准确性。随窗口长度增加布里渊频移误差先减少后增加,在扫频间隔为1~10MHz、信噪比为0～40dB情况下,通用的最优窗长为53~163。     

基于相似匹配方法的光纤布里渊频移提取准确性影响因素分析

基于相似匹配方法的布里渊频移提取算法具有无需预设模型、适应性强的优点。为了获得谱信号参数和扫频参数对算法性能的影响,在仅单一因素变化情况下系统研究了布里渊线宽(简称线宽)、信噪比、扫频间隔、扫频范围对布里渊频移提取准确性的影响规律。结果表明:频移误差与线宽成线性关系,探测谱与参考谱线宽差距本身对算法准确性产生的影响较小;频移误差随参考谱和探测谱信噪比的增加均呈指数规律减小;扫频间隔不变时随参考谱扫频范围增加频移误差存在增加的趋势,同时计算时间线性增加;探测谱的扫频范围为2倍线宽时频移误差最小。研究结果可为布里渊频移的准确提取提供参考。     

基于GA-QPSO混合算法的Brillouin散射谱特征提取方法

提出了一种将遗传算法(GA)和量子粒子群(QPSO)算法相结合的新优化算法,该算法通过运用GA中的交叉和变异算子操作来优化QPSO算法,提高QPSO的全局搜索能力,克服其易陷入局部极值的缺点。将其应用到PseudoVoigt型布里渊散射谱特征提取,对不同权重比、不同线宽和不同信噪比下的布里渊散射谱进行了参数估计和分析,通过采集不同温度时的布里渊散射谱实验数据,利用GA-QPSO算法对实验数据进行处理。实验结果表明,利用GA-QPSO算法可以提高布里渊散射谱的频移提取精度,当温度为25℃时,频移拟合误差最大为2.18 MHz,且随着温度的升高,平均拟合误差逐渐减小,在80℃时的频移拟合误差最大为0.065 MHz。因此,将该算法用于布里渊散射温度和应变传感系统,在提高空间分辨率、检测精度等方面具有很好的应用前景。     

基于神经网络的光纤温度和应变快速解调方法

为了提高基于布里渊散射的分布式光纤传感系统实时性,在分析经典基于洛伦兹和伪Voigt模型拟合法优缺点的基础上,将多层前馈神经网络方法用于布里渊频移的估算.确定了神经网络的结构、输入及输出量、激活函数和训练算法,采用不同信噪比(5dB～40dB)和布里渊频移(10.62GHz～10.82GHz)的布里渊谱训练该网络,训练...     

布里渊散射谱图像的边缘特征提取方法

为有效提取布里渊分布式光纤传感系统的布里渊频移,减少数据处理时间,提出一种基于二阶Lapl aci an边缘检测算子的布里渊散射光谱图像边缘特征提取方法。将布里渊频移视为散射谱图像边缘,利用二阶Lapl aci an边缘检测算子对布里渊散射光谱图像进行锐化处理;通过非极大值抑制和自适应阈值去除无效边缘获得二值图像,并搭建布里渊光时域反射温度传感系统。实验结果表明:该方法能够准确提取频移特征,且用时远少于曲线拟合法,有利于缩短系统的温度测量时间。     

基于布里渊和瑞利散射光拍频的方法测量温度

基于光纤非线性效应,设计并搭建出一套布里渊散射光与瑞利光拍频测量温度的实验装置,用布里渊频移量对温度系数进行标定,并采用三种不同方法进行数据处理,结果表明采用频移量均值线性拟合结果较好,得到的布里渊温度频移系数为1.005 MHz/℃,该温度传感系统的测量精度为0.7 ℃。     

多波长BOTDR系统中布里渊散射谱的特征提取

根据布里渊散射谱的传输特性和高精度特征提取的 要求,理论分析了布里渊频移的波长依 赖性和多波长探测光传感时的外差检测布里渊散射谱特征,提出了利用Pseudo-Voigt基函 数和莱 文伯格-马夸尔特(L-M)优化算法对布里渊散射叠加谱进行特征提取。通过与洛伦兹、高斯 和5次多项式 曲线拟合法进行预测比较,在中心频移为11.122903GHz的单波长和多波长传感的仿真散射谱模 型中,本文所提方法的频移测量误差最小,对应的温度测量误差仅为0.047、0.000和0.112℃, 且拟合度最好。在采用多模法布里-珀罗激光器的布里渊散射谱检测系统中,Pseudo-Voig t曲线拟 合的综合评价指标优于其他3种拟合方法。仿真分析和实验结果表明,Pseudo-Voigt曲线拟 合适用于多波长传感时布里渊散射叠加谱的特征提取,可有效地提高预测精度。     

基于人工神经网络的智能化架空线路应变快速解调方法北大核心

为了提高智能化光纤复合架空线路态势感知的实时性,将人工神经网络方法应用于光纤沿线应变解调,确定了神经网络的结构。编程实现了基于洛伦兹模型的最小二乘谱拟合方法和神经网络方法,采用不同信噪比和布里渊频移的布里渊谱训练神经网络,将它们应用于某光纤复合架空线路沿线光纤应变的测量,从不同角度比较了两种方法的计算结果。计算结果表明,神经网络方法能有效获得光纤沿线的布里渊频移进而获得应变,具有与谱拟合方法相似的准确性,但应变解调时间仅约为谱拟合方法的1/20000。研究结果为提高智能光纤复合架空线路态势感知的实时性提供了参考。     

基于斜坡法的智能化架空线路应变快速感知

为了提高输电线路状态感知实时性, 将单斜坡法和基于伪Voigt模型的最小二乘谱拟合法用于架空线路复合光纤应变的测量, 基于实测布里渊谱系统, 研究了工作点增益的信噪比和布里渊频移对单斜坡法准确性的影响。结果表明, 随着工作点增益信噪比增加, 布里渊频移误差近似成指数规律减小; 随着布里渊频移与工作点频率之差的增加, 布里渊频移误差先快速下降, 然后略有增加; 当工作点处布里渊增益的信噪比不小于25 dB且工作点频率始终小于(或大于)布里渊频移时, 单斜坡法应变误差小于60 με; 根据不同布里渊频移下60 με对应的临界信噪比, 可插值获得不同情况下对应的临界信噪比; 单斜坡法的谱测量时间和计算时间分别为谱拟合法的1/161和1/600左右。该工作为提高智能化光纤复合架空线路态势感知实时性奠定了基础。     

基于单斜坡的分布式光纤温度传感适用性研究

传感器是配电物联网的基础,尤其是基于布里渊散射的分布式光纤传感器应用日益广泛。为了提高基于布里渊散射的分布式光纤传感的测量速度,为基于温度的电气设备状态感知奠定基础,对单斜坡法在光纤沿线温度测量的适用性进行了研究。编程实现了基于伪Voigt模型的谱拟合法和单斜坡法的计算机程序,针对不同信噪比的布里渊谱分别采用谱拟合法和单斜坡法计算光纤沿线的温度。结果表明,在一定的信噪比和光纤沿线布里渊频移波动程度范围内,单斜坡法的计算准确性可以达到与谱拟合法相近程度,但谱测量时间可以缩短为后者的几十分之一,对应的计算时间仅为谱拟合法的1/758。研究了信噪比、布里渊频移和线宽不确定度对误差的影响,结果表明,随信噪比(以dB为单位)增加,温度误差快速下降,然后逐渐趋于稳定值;随布里渊频移与工作点差距的增加,温度误差增大,且加速度随二者差距的增大而增大;温度误差随线宽偏差的增大而增大。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its