基于S型函数的变步长LMS自适应滤波算法

本文通过建立步长因子μ与误差信号之间的非线性函数关系,得出一种新的变步长自适应滤波算法(SVSLMS)。理论分析和计算机仿真结果表明该算法的性能优于传统的LMS算法和NLMS算法。     

一种改进的变步长LMS自适应滤波算法

提出一种改进的变步长LMS(Least Mean Square)算法,该算法在步长参数μ与误差信号e(n)之间建立了一种非线性函数关系,并且分析了参数α,β的取值原则及对算法收敛性能的影响。该关系具有在误差e(n)接近零处缓慢变化的优点,克服了s函数变步长LMS算法在自适应稳态阶段μ(n)取值偏大的缺陷。理论分析和计算机仿真结果表明,改进算法的收敛速度和稳态误差的性能指标都有较大的提高。     

一种新的变步长LMS自适应滤波算法

在对传统LMS算法、变步长SVSLMS算法及归一化LMS算法分析的基础上,提出了一种改进的归一化变步长LMS算法即N-SVSLMS（Normalized-SVSLMS）算法。该算法结合了参考文献中两种算法的思想,得到了改进的归一化LMS自适应算法。该算法在信道环境多变的情况下,收敛速度和稳定性能有了进一步的提高。理论分析及计算机仿真结果表明,N-SVSLMS算法明显优于传统LMS算法、变步长SVSLMS算法及归一化的LMS算法。     

一种新的变步长LMS自适应算法及其性能分析

通过建立步长因子μ与误差信号e之间的非线性关系,提出一种新的基于箕舌线的变步长LMS算法。该算法具比有传统LMS算法计算量小、稳定性较好、简单易于实时处理等优点。仿真结果表明,其收敛速度、稳定性以及跟踪速度优于传统固定步长LMS算法和SVSLMS算法,且不须进行指数运算,计算复杂度低于SVSLMS算法。     

一种改进的变步长LMS算法及在车内降噪中的应用

为了提高传统最小均方(LMS)算法的收敛速度,减小稳态误差,基于Sigmoid函数,提出一种改进步长因子μ的方法。该方法通过建立步长因子μ和误差信号e之间的非线性函数关系,并利用指数函数表示误差信号e和可控参数,实现对步长因子μ进行调整。算法收敛初期步长因子μ相对较大,实现加快算法收敛速度的目的;算法收敛后期适度减小稳态阶段步长因子μ,以达到减小算法稳态误差的目的。将该算法应用于车内噪声的有源控制,并与LMS算法进行仿真比较分析。仿真结果表明,相对于传统LMS算法,该算法有效地加快了收敛速度,同时提高了系统的稳定性。     

一种基于指数函数的变步长LMS算法

提出了一种基于指数函数的变步长LMS算法.通过建立误差ε和步长μ的函数关系,实时调整步长,解决了稳态失调系数和收敛速度的矛盾.仿真实验表明,改进算法较原有的普通LMS算法和双曲正切变步长LMS算法有更高的收敛速度和更小的稳态失调系数.     

一种新的变步长LMS自适应滤波算法及其仿真

传统变步长LMS算法存在收敛速度慢、易受噪声影响等缺点,为了提高算法性能,论文建立了LMS算法中步长因子μ(n)和误差信号e(n)的相关统计量之间的非线性关系,提出了一种基于改进的双曲正切函数的变步长LMS(HTLMS)算法.算法采用当前误差与上一步误差乘积的绝对值来调节步长,并引入了绝对估计误差的扰动量来更新自适应滤波器抽头向量,因而具有收敛速度快、噪声抑制能力强和稳态误差低等特点.计算机仿真结果表明,在不同信噪比条件下,与多种LMS算法相比,本文算法都具有较快的收敛速度和较好的稳态误差.     

迭代变步长LMS算法及性能分析

针对固定步长LMS(Least Mean Square)算法(FXSSLMS)不能同时满足快速收敛和小稳态失调误差的问题,该文提出了迭代变步长LMS算法(IVSSLMS)。与已有的变步长LMS算法(VSSLMS)不同,该算法的步长因子不再是由输出误差信号控制,而是建立了与迭代时间的改进Logistic函数非线性关系,克服了定步长算法收敛慢及已有变步长算法抗噪声干扰能力差的问题。最后从理论上分析了算法的性能,给出了其参数取值方法。理论分析和仿真均表明,所提算法能够在快速收敛情况下获得小的稳态失调误差,在有色噪声干扰下稳态失调误差比已有算法降低了约7 dB。     

一种新的变步长LMS算法

在对基本LMS算法分析的基础上,通过构造步长因子μ与误差信号e（n）之间的非线性函数,提出一种新的变步长最小均方误差（LMS）算法,并且分析了参数的取值对算法性能的影响。该算法通过调整步长参数,使权向量达到最优,有效改善了收敛速度与稳态误差的性能。理论分析和仿真结果表明,与基本LMS算法以及部分同类变步长LMS算法相比,该算法具有更快的收敛速度和更小的稳态误差,进一步验证了新算法优于这里所述其他算法。     

基于误差反馈的变步长LMS自适应滤波算法

对变步长LMS滤波算法进行研究,提出一种新的变步长LMS自适应滤波算法。该算法基于Sigmoid函数,通过引入误差因子反馈来调整函数参数,解决了类Sigmoid函数中参数设置的问题,并使算法具有较快的收敛速度和较小的稳态误差。计算机仿真表明,相对于其他变步长算法,该算法在收敛速度和稳态误差方面均表现优异,具有较好适用性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its