直升机卫星通信系统信道模拟与通信实现

针对直升机卫星通信系统中直升机旋翼对通信信道造成的周期性衰落问题,采用射频收发器AD9361模拟了信道周期性衰落模型,基于此模型在现场可编程门阵列(Field Programmable Gate Array,FPGA)上优化并实现了缝隙检测算法。根据信道衰落模型和缝隙检测算法及数据链路速率和带宽的要求,提出了一套直升机卫星通信系统可靠通信方案,即前向链路采用重发和分集接收及短码LDPC编码技术,返向链路根据前向链路缝隙检测的结果在无遮挡缝隙采用突发通信和长码低密度奇偶校验(Low Density Parity Check,LDPC)编码技术,实现可靠通信。系统测试结果表明,该方案不受直升机机型限制,系统可在40%遮挡率下实现前向链路25.6 kb/s和返向链路4 Mb/s速率下的可靠通信。     

直升机起降中无线紫外光喷泉码引导方法研究

为了提高直升机在应急无线紫外光通信辅助起降中信标搜寻、定位降落的效率和可靠性,该文提出一种基于喷泉(LT)码的分等级编码通信方案,采用不同等级编码的分级方法设计了不同场景、不同引导阶段的通信策略,分析了高丢包率信道环境中变化删除概率下的误比特率,并与其他传统信道编码进行了比较。实验仿真结果表明,在二进制删除信道下,该分等级编码方法可显著降低LT码的误比特率,提高了编译码性能;该通信策略适用于高丢包率信道环境,能获得更好的通信效果,提高了直升机应急辅助起降的安全性。     

动态删除回归的周期型频率选择算法

文章为提高动态频率选择算法的保密性和频谱利用率,提出了一种动态删除回归的周期频率选择算法。算法在现有动态频率选择算法的基础上,将“跳频”与“跳时”相结合,利用RS序列生成初始频率集合,根据当前信道状态,采取删除回归机制形成频率变换序列,以广播的形式,周期性下发信道切换消息完成动态频率选择,实现类似慢跳频功能,有效避免干扰同时,提高复杂电磁环境下的可靠性。仿真实验表明,相比于现有的动态频率算法,动态删除回归的周期频率选择算法频谱利用率更高,抗强干扰能力突出。     

超宽带室内参考信道模型的研究

通用且随机的超宽带室内信道模型对物理层标准评价、系统设计和性能分析起重要作用。本文首先介绍了超宽带室内信道的典型特征,然后在信道探测的基础上详细描述了超宽带室内参考信道模型,并结合具体超宽带室内环境对信道模型参数进行仿真,将仿真结果与探测信道统计特性进行比较,分析了信道模型结构对系统设计和性能分析的影响,指出超宽带室内参考信道模型的局限性,最后得出进一步研究超宽带室内信道模型的必要性。     

LT码的性能分析及仿真

LT码（Luby Transform Codes）属于喷泉码的其中一种,它是一类基于图的线性纠删码,其应用的信道环境是删除信道（BEC,Binary Erasure Channel）。这里主要介绍在二元删除信道模型下,LT码的4种度分布设计方法及,分析了短码长和长码长情况下的LT码在不同信道删除概率情况下的性能及比较。研究结果表明：在删除概率非常大的情况下,只要译码端接收到足够多的包都能以高概率译出原始数据包,只是产生的冗余度大,这里的结果将为系统选择不同参数的LT码提供参考。     

SimpliciTI网络的PSCP-FA机制研究

本文开展了对SimpliciTI网络FA频率跳变机制的研究,并且针对其信道切换时存在的信道选取盲目性问题,引入周期性同步机制和信道预测机制,改进了原有的信道检测模型,提出了一种基于周期性同步和信道预测的PSCP-FA网络接入机制。     

基于DSP的流星信道模拟器设计

讨论了流星突发通信欠密类余迹的信道特性及其模型。以TMS320VC5509 DSP为核心设计了流星信道模拟器系统，并给出模拟器在实验室流星突发通信自适应变速率系统设计中的测试应用。     

基于Simulink的星间链路信道仿真分析

对星间链路信道统计模型进行了理论分析,在MATLAB/Simulink平台上,设计并实现了一种星间链路仿真模型。该模型充分考虑了星间链路信道中的多普勒频移、卫星星座的周期性引起的自由空间传播衰减,以及链路中存在的干扰、噪声、时延等对卫星通信信号的影响。仿真结果证明了该模型的正确性。     

移动数据传输的差错控制

无线电信道中存在衰落、干扰等多种因素，导致数据传输性能恶化，如何在移动信道中实现可靠而有效的通信值得关注。 差错控制 差错控制方案有三类，正向纠错（ＦＥＣ）、检错加自动重发（ＡＲＱ）及混合纠错（ＨＥＣ）。其中ＦＥＣ有循环码（或者称为块码）及卷积码两大类。ＡＲＱ有停止／等待，退Ｎ步与选择重发三种。ＨＥＣ综合了ＦＥＣ及ＡＲＱ两种方式。纠错码的选择与其所应用的场合是密切相关的。 由于移动信道是时变、非线性信道，专家在研究了移动信道数据传输的性能后，得出了不同条件下的差错图样的分布情况，但不管如何，信道的…     

频率选择性慢衰落信道下的一种Rake接收技术

通过对无线通信信道传输特性的讨论,以瑞利信道和莱斯信道为模型,研究在QPSK扩频调制下接收端信号的同步、多径分离与按增益合并.仿真实现了频率选择性慢衰落信道下的一种Rake接收技术,结果表明用他来减小多径衰落是有效的.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its