五元均匀圆阵干涉仪加权测向算法及解相位模糊的条件

研究五元均匀圆阵一维、二维干涉仪测向算法。提出了一种多基线加权干涉仪测向算法，提高了干涉仪测向精度。提出了多基线对的比较法解相位模糊，讨论了该方法在噪声限制和阵列孔径限制下的解相位模糊条件。     

基于相关比幅测向的圆阵干涉仪解模糊算法

针对比幅测向精度较低而干涉仪测向相位易模糊这一问题,提出了一种基于多波束比幅测向的圆阵相关干涉仪解模糊改进算法,实现对小型无人机方位的快速估计。首先,根据目标无人机的图传信号特征值建立离线数据库,利用改进的多波束相关比幅法对无人机来波方向进行粗略测量,通过二次插值法对“栅栏效应”造成的估计偏差进行一定修正;然后,将修正后的角度测量值对干涉仪实测相位差进行解模糊;最后,利用无模糊的相位差通过相关运算实现来波方向的精确估计。该算法将相关运算运用在比幅测向中,有效提高了干涉仪解模糊概率。与传统的比幅测向法和干涉仪测向法相比,该算法只需3组天线就能完成测向功能,其测向精度提高至2°以内,并且该算法对天线一致性要求低,实时性高,可实际应用于圆形阵列测向体制,实现对无人机的快速测向。     

单基线干涉仪无模糊测向理论研究

首先分析了传统单基线干涉仪产生测向模糊的原因,然后在干涉仪时差分析理论的基础上,提出了单基线干涉仪无模糊测向方法,建立了相关的理论模型,并通过仿真验证了其有效性与实用性,从而为该理论的后续工程应用奠定了前期基础。     

干涉仪基线组合对测向精度的影响

针对干涉仪测向算法,以三种不同基线组合为例,通过理论和仿真分析,说明信号频率、来波方位、相位模糊对测向精度的具体情况。得出长基线数量越多测向模糊越严重,但测向精度越高的结论。为干涉仪测向系统的工程应用提供理论依据。     

基于多基线干涉仪和多波束比幅联合测向天线系统的设计与实现

从干涉仪测向原理出发,结合干涉仪测向公式进行了测向误差分析。根据测向精度要求,提出了三基线设计及最长基线长度要求;根据最短基线解相位模糊要求,提出了八比幅测向精度要求;设计并实现了一种基于多基线干涉仪和多波束比幅联合测向的天线系统。     

一种基于平行辅助基线的干涉仪测向算法

针对平面阵测向中存在的相位模糊问题,提出一种基于平行基线的干涉仪测向算法。该算法利用平行基线中短基线相位差可能的模糊数获得长基线的一系列可能相位差,通过相关运算实现解模糊,并利用最小二乘解确定最终的入射信号方向。算法中引入的平行基线有效降低了解模糊运算量,而最小二乘解则提高了算法测向精度。计算机仿真结果验证了算法解相位模糊的正确性和测向的高效性。     

基于五通道干涉仪的扩频信号测向算法研究

文中采用五通道干涉仪测向体制,利用扩频信号的互相关特性,研究了一种扩频信号测向算法。介绍了扩频通信基本原理,给出了干涉仪测向原理,并针对五通道干涉仪提出了等基线时差法测向算法。该算法具有很好的噪声抑制和解模糊效果,并且给出了仿真结果与分析。     

一维搜索与长短基线相结合的干涉仪设计方法

设计宽带干涉仪测向系统时需要解决系统测向精度和最大无模糊角度之间的矛盾问题,本文通过深入研究,提出了基于一维搜索与长短基线相结合的多基线相位干涉仪设计方法,并进行了仿真分析,结果表明该方法简单有效,易于实现,对宽带干涉仪测向系统工程设计具有一定的参考价值.     

干涉仪阵列解模糊算法研究

多基线宽带干涉仪可较好地解决测向精度和最大无模糊角度之间的矛盾,但其存在着相位差模糊问题,针对该问题,提出了基于一维搜索的干涉仪阵列多组解模糊算法,讨论了正确解模糊条件,通过仿真验证了解模糊条件的正确性.对不同信噪比条件下的正确解模糊概率和波达角估计精度进行了仿真分析,结果表明该算法有效,可以满足一般工程实现时对信噪比及波达角估计精度的要求,对干涉仪工程设计具有一定的应用价值.     

多基线干涉仪测向的基线设计

文章介绍了一种多基线干涉仪测向系统的基线数量和间距设计方法，该方法主要是根据测向误差和测向模糊数量来约束基线设计，并结合实例介绍了设计过程。研究还表明，如允许较小概率的测向模糊，将使基线数量减少并便于工程实现。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-