基于改进伽马曲线的星载长波红外焦平面非均匀性校正算法

随着长波红外探测器技术的进步,通过选用宇航级大阵列长波红外探测器,天基红外遥感卫星技术得到快速发展。长波红外探器响应强非线性导致传统的基于线性模型的非均匀性校正算法校正误差大,从而影响卫星在轨使用效能。针对该问题,结合大量实验室数据和卫星在轨数据的统计分析结果,建立了一种新的长波红外探测器非线性响应模型,据此提出了一种基于改进伽马曲线的非均匀性校正算法,以有效克服探测器响应强非线性对校正精度的影响。该算法首先建立基于改进伽马曲线的探测器非线性响应模型,依据此模型对获取图像进行非线性压缩映射,实现探测器响应的线性化,然后利用星载基于定标技术的线性化算法实施非均匀性校正,同时,定标温度点根据所建立模型参数动态更新,最后通过逆非线性化压缩映射还原出实际的非均匀校正后的图像。基于人造黑体和在轨实景红外图像的实验结果表明,该算法有效解决了探测器响应强非线性对校正精度的影响,校正后图像的视觉效果和定量化指标均优于传统的星载非均匀校正算法。     

一种改进的便于实现的红外焦平面陈列不均匀生校正算法

本提出了一种适合对光敏元的响应特性为非线性的红外焦平面陈列进行不均匀性校正的改进算法。与现有算法相比，该法具有便于用软件和硬件实现的优点。同时，通过对改进前后的算法进行理论分析和软件模拟结果比较，证明二的校正精度无本质差别，校正效果基本相同。     

红外探测器非均匀性校正系统研制

分析了红外焦平面阵列（IRFPA）基于定标的非均匀性校正算法和基于场景的非均匀性校正算法的优势和不足。针对红外焦平面阵列二元非线性的非均匀性理论模型这一特点,提出了一种基于S曲线拟合的校正算法。利用FLIR公司的长波非制冷红外探测器进行信号采集,建立了焦平面探测元的响应模型。描述了基于FLIR长波非制冷红外探测器在FPGA平台的处理流程,并实现了S曲线校正算法,提高了红外图像的质量。实验表明,经过S曲线拟合校正处理,减弱了红外图像的条纹噪声,使IRFPA组件的非均匀性从6.45%降低至2.06%。     

红外焦平面阵列非均匀性校正精度的研究

定标校正法是目前人们实际使用较多的一种红外焦平面阵列非均匀性校正方法。该方法采用的算法简单,易于用硬件实时实现,但也存在校正精度低的缺点,针对这一不足,首先通过实验得到了红外焦平面探测器的实际非线性响应曲线,然后在此基础上进一步分析了定标点的数量及选取对红外焦平面阵列非均匀性校正精度的影响,为提高定标校正法的校正精度提供了依据。     

红外焦平面阵列二元非线性的非均匀性理论模型

 非均匀性校正是红外焦平面阵列成像质量提高的关键,在现有一元线性理论模型局限下,红外焦平面阵列成像非均匀性校正难以获得校正精度的提高.本文通过红外焦平面阵列探测器成像机理及其成像过程理论分析,推导了影响探测器响应及其非均匀性的主要因素,首次建立了红外焦平面阵列二元非线性的非均匀性理论模型,通过实验测试及其统计分析验证了理论模型.该模型能在较宽红外辐射和环境温度范围内准确预测红外焦平面阵列响应曲线及其非均匀性,比原一元线性理论模型更全面准确地描述了红外成像非均匀性影响因素及探测器响应关系.     

红外焦平面探测器辐射非均匀性校正方法

大面阵红外焦平面探测器的应用日趋广泛,而面阵的不断增大会导致很多不可避免的成像误差,对最终成像效果有较大影响,有必要对其进行校正。在红外焦平面探测器输出信号参数的测试中,针对圆形冷屏限制的红外焦平面分析比较了两种辐射非均匀性校正方法,一种方法为建立光敏元立体角的数学模型,用SolidWorks和MATLAB等软件求出这些立体角从而得到校正因子;另一种方法为从光敏元的视场角ω′出发,按辐射光照度以cos4ω′衰减的规律进行校正。以320×320红外焦平面探测器为例,从面阵中选取均匀性较好的若干行作为样本,对其测试数据进行校正。分析表明,两种方法校正后的曲线较为平直,但第二种方法的校正效果比较理想,可见视场角校正法对数据的非均匀性有较大改善。因此,为了真实地反映探测器的非均匀性,需要对像元辐射通量进行校正。     

红外焦平面探测器测试数据的校正

针对红外焦平面探测器现有测试方法的不足,讨论了像元辐射通量的校正方法,推导的校正公式具有相当高的精度,适用于不同规格的圆形冷屏探测器.介绍了凝视红外焦平面探测器测试数据的校正研究,对Sofradir中波320×256探测器的输出信号数据进行了校正,并对校正结果进行了讨论.校正因子与真实解(数值解)十分接近,66个数据的平均相对误差为0.04%.校正后的曲线十分平直,信号的非均匀性有较大改善,由校正前的3.27%下降到1.33%,响应信号的平均值有所提高.为了真实地反映探测器的性能参数,特别是非均匀性,需要对像元辐射通量进行校正.     

基于FPGA的IRFPA联合非均匀性校正的实时实现

红外焦平面阵列（IRFPA）的快速发展对探测器的非均匀性校正技术要求越来越高。目前常用的基于标定技术的两点或多点校正算法在应用中难以完全克服探测器响应的非线性和随时间及环境变化的漂移的影响。本文提出了基于标定和基于场景的联合校正算法及其在FPGA（Field Programmable Gate Array）上的实时实现技术。其中利用基于标定的二项式拟合算法来消除探测器的大部分非均匀性，基于场景的时域高通算法来抑制探测器非均匀性参数漂移的影响，从而使这两类算法取长补短，可有效克服各自的缺陷。文中详细描述了基于FPGA实现联合校正算法的基本原理和处理流程。实验表明，这种联合校正算法效果良好，可以充分满足大规模IRFPA非均匀性校正的要求。     

一种考虑红外焦平面器件非线性响应的非均匀性校正方法

针对红外焦平面阵列探测元响应具有非线性特征，提出了一种易于硬件电路实现的、考虑探测元响应非线性的非均匀性校正方法．通过理论分析和仿真实验，结果表明该方法校正参数少，易于硬件实现并且校正性能优于多点校正法和基于多项式拟合的校正方法．     

红外焦平面阵列响应度非均匀性的校正算法

本文分析了红外焦平面阵列探测器的响应度非均匀性对成像系统灵敏度的影响和单个探测单元的积分时间响应非线性对成像质量的影响。提出了一种基于场景的运动扫描平均值校正与积分时间校正相结合的红外焦平面阵列响应度非均匀性的校正算法。从而使得系统不仅能够得到均匀性良好的响应度,而且还能使响应度不会受到积分时间改变的影响,进一步扩展了红外焦平面探测器的实际应用范围。     

Interfacial reaction and shear strength of SnAgCu-xNi/Ni solder joints during aging at 150 °C

The interfacial microstructure and shear strength of Sn3.8Ag0.7Cu-xNi (SAC-xNi, x = 0.5, 1, and 2) composite solders on Ni/Au finished Cu pads were investigated in detail after aging at 150 °C for up to 1000 h. The interfacial characteristics of composite solder joints were affected significantly by the weight percentages of added Ni micro-particles and aging time. After aging for 200 h, the solder joints of SAC, SAC-0.5Ni and -1Ni presented duplex intermetallic compound (IMC) layers regardless of the initial interfacial structure on as-reflowed joints, whose upper and lower IMC layers were comprised of (CuNi)₆Sn₅ and (NiCu)₃Sn₄, respectively. Only a single (NiCu)₃Sn₄ IMC layer was ever observed at the SAC-2Ni/Ni interface on whole aging process. Based on the compositional analysis, the amount of Ni within the IMC regions increased as the proportion of Ni addition increased. The IMC (NiCu)₃Sn₄ layer thickness on the interface of SAC and SAC-0.5Ni grew more slowly when compared to that of SAC-1Ni and -2Ni, while for the (CuNi)₆Sn₅ layer the reverse is true. Except the IMCs sizes are increased with increased aging time, the interfacial IMCs tended to transfer their morphologies to polyhedra. In all composite joints testing, the shear strengths were approximately equal to non-composite joints. The fracturing observed during shear testing of composite joints occurred in the bulk solder, indicating that the SAC-xNi/Ni solder joints had a desirable joint reliability.     

有机发光二极管中ADN掺杂ErQ的1.54μm电致发光

自行设计了基于8-羟基喹啉铒(ErQ)为发射层(EMLs)和二硝酰胺铵(ADN)为蓝光主体材料的近红外有机发光二级管.器件的基本结构为(p-Si/NPB/EML/Bphen/Bphen:Cs2CO3/Sm/Au),设计并比较了三套不同发射层结构(ErQ/ADN为双层结构器件,(ErQ/ADN)×3为多层结构器件,ErQ:ADN为掺杂结构器件)的器件.三组器件在一定的偏压下,均可发出1.54μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN:ErQ(1∶1)掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN:ErQ复合膜做了以下表征:吸收谱、光致发光谱和荧光寿命谱.实验结果证实了在近红外电致发光过程中存在从ADN主体分子到ErQ发射分子的高效率的能量转移.     

Emerging interconnects: a state-of-the-art review and emerging solutions

Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressive technology scaling continues, the copper resistivity increased because of size effects, which causes increase in delay, power dissipation and electromigration. The need to reduce the resistor-capacitor??????? delay, dynamic power utilisation and the crosstalk commotion is as of now the fundamental main impetus behind the presentation of new materials. The purpose of this paper is to do a survey of interconnect material used in IC from introduction of ICs to till date. This paper studies and reviews new materials available for interconnect application which are optical interconnects, carbon nanotube (CNT), graphene nanoribbons (GNRs) and silicon nanowires which are alternatives to copper. While doing a survey of interconnect material, it is found that multiwalled CNTs, multilayer GNR and mixed CNT bundles are promising candidates and are ultimate choice that can strongly address the problems faced by copper but on integration basis copper would last for coming years.     

聚对苯撑苯并双(口恶)唑发光及其器件制备

采用光谱技术,研究了聚对苯撑苯并双(口恶)唑(PBO)溶液的光敏发光特性,并用相对法估算出溶液发光效率在50%范围.结合光谱技术、半导体电学和电化学等研究手段,具体研究了以PBO为发光层的单层电致发光器件,研究结果显示,电致发光与薄膜的光致发光有具有相同的发光中心,峰值位于510 nm左右.同时发现,由于存制备过程中不同处理条件使得不同厚度薄膜残留的掺杂物质浓度不同,从而引起薄膜的导电性的不同.使得器件的阈值场强随PBO厚度的减小而逐渐增加.     

人小肠粘膜免疫酶的定位研究—光镜和电镜免疫组织化学染色法

本文对免疫酶组织化学的样品制备程序和染色方法做了详细的阐述。用直接法、间接法和ABC法,对人小肠免疫酶的定位,进行了光镜和电镜的观察,染色阳性反应显著,获得了满意的效果。并对染色技巧做了分析和探讨。     

BNBST无铅压电陶瓷的制备工艺研究

设计了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3（BNBST[100x-100a／100b]）无铅压电陶瓷新体系。该体系压电陶瓷具有工艺特性及压电响应好，压电常数高的特点，且有实际应用前景的新型压电陶瓷材料体系。采用传统的陶瓷工艺制备了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3无铅压电陶瓷，研究了制备工艺参数对其物化结构性能的影响。生料的热重-差热（TGA-DTA）分析表明，粉料合成过程中，先是SrTiO3、BaTiO3的形成，然后是（Bi0．5Na0．5）Tio，的形成，同时三者形成固溶体；密度测试表明，陶瓷的体积密度随烧结温度的升高而增大，可较易获得理论密度94％的陶瓷；X-射线能谱分析（EDAX）研究表明，陶瓷的Bi、Na的挥发随着烧结温度的升高而加剧。研究结果表明，要制备性能优良的无铅压电陶瓷，需要精确控制制备工艺。     

钠离子对poly(dT).poly(dA).poly(dT)三螺旋DNA分子呼吸模式的影响

利用分子结构的螺旋对称性,建立了一个包括钠离子的三链DNA分子poly(dT)*poly(dA)*poly(dT)的晶格动力学模型,计算了poly(dT)*poly(dA)*poly(dT)的氢键呼吸模式.结果发现钠离子的加入明显地淬灭了位于较低频率的几个最为强烈的Hoogensteen氢键呼吸模式,而对Watson-Crick氢键呼吸模式影响不明显,这说明钠离子能提高poly(dT)*poly(dA)*poly(dT)三螺旋结构的稳定性.该计算结果很好地解释了poly(dT)*poly(dA)*poly(dT)的热融化实验.     

Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

We investigate the properties of arsenic (As) covered Si(211) and Si(311) surfaces by analyzing data from x-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED) images. We then create a model using total surface energy calculations. It was found that both Si(211) and Si(311) had 0.68±0.08 surface As coverage. Si(211) had 0.28±0.04 Te coverage and Si(311) had 0.24±0.04 Te coverage. The Si(211) surface replaces the terrace and trench Si atoms with As for a lower surface energy, while the Si edge atoms form dimers. The Si(311) surface replaces all terrace atoms and adsorbs an As dimer every other edge site. These configurations imply an improvement in the mean migration path from the bare silicon surface by allowing the impinging atoms for the next epitaxial layer, tellurium (Te), to bind at every other pair of edge atoms, and not the step terrace sites. This would ensure a nonpolar, B-face growth.     

系统级封装新型埋入式电源滤波结构的研究

在高密度小尺寸的系统级封装(SiP)中,对供电系统的完整性要求越来越高,多芯片共用一个电源网路所产生的电压抖动除了会影响到芯片的正常工作,还会通过供电网路干扰到临近电路和其他敏感电路,导致芯片误动作,以及信号完整性和其他电磁干扰问题.这种电压抖动所占频带相当宽,几百MHz到几个GHz的中频电源噪声普通方法很难去除.结合埋入式电容和电源分割方法的特点,提出一种新型高性能埋入式电源低通滤波结构直接替代电源/地平面.研究表明,在0.65～4GHz的频带内隔离深度可达-40～75 dB,电源阻抗均在0.25ohm以下,实现了宽频高隔离度的高性能滤波作用.分别用电磁场和广义传输线两种仿真器模拟,高频等效电路模型分析这种低通滤波器的工作原理以及结构对隔离性能的影响,并进行了实验验证.     

Joint estimation of TOA and DOA in IR-UWB system using a successive propagator method

Impulse radio ultra-wideband (IR-UWB) ranging and positioning require accurate estimation of time-of-arrival (TOA) and direction-of-arrival (DOA). With receiver of two antennas, both of the TOA and DOA parameters can be estimated via two-dimensional (2D) propagator method (PM), in which the 2D spectral peak searching, however, renders much higher computational complexity. This paper proposes a successive PM algorithm for joint TOA and DOA estimation in IR-UWB system to avoid 2D spectral peak searching. The proposed algorithm firstly gets the initial TOA estimates in the two antennas from the propagation matrix, then utilises successively one-dimensional (1D) local searches to achieve the estimation of TOAs in the two antennas, and finally obtains the DOA estimates via the difference in the TOAs between the two antennas. The proposed algorithm, which only requires 1D local searches, can avoid the high computational cost in 2D-PM algorithm. Furthermore, the proposed algorithm can obtain automatically paired parameters and has better joint TOA and DOA estimation performance than conventional PM algorithm, estimation of signal parameters via rotational invariance techniques algorithm and matrix pencil algorithm. Meanwhile, it has very close parameter estimation to that of 2D-PM algorithm. We have also derived the mean square error of TOA and DOA estimation of the proposed algorithm and the Cramer-Rao bound of TOA and DOA estimation in this paper. The simulation results verify the usefulness of the proposed algorithm.