“电路”课程教学交互方法实践

教学交互在互联网+背景下形式多样, “电路”课程教学注重教学交互,在教学中实施了线上交互、雨课堂实时交互和个性化交互等教学交互方法,利用交互反馈信息实时调整课程教学内容和进度,并将学生交互反馈信息进行客观评分,计入学生课程综合成绩。经教学实践验证,深度教学交互取得了良好的教学效果,激发了学生的学习潜能、学习的积极性和主动性,提高了学生成绩。     

多课程融合的数字电源系统设计综合案例

综合案例融合了理论与实践、软件与硬件、控制算法与仿真,涉及到多门专业课程。以数字电源系统为载体,介绍了项目的硬件系统、软件系统、控制算法、仿真、实验测试等工程技术开发的各个环节。通过该案例的教学实践,加强了课程间知识点的联系,激发了学生的学习兴趣,提高了学生的实践能力和创新能力,教学效果得到学生的认可。     

基于数据挖掘的计算机辅助课堂教学系统设计

针对现有计算机辅助教学模式中普遍存在的信息利用率差,智能性、个性化较低等问题,设计一种基于数据挖掘的计算机辅助课堂教学系统。该系统模块设计采用三层B/S结构。利用信息收集模块实现学生信息数据的收集与存储;用户信息预处理模块将信息数据进行预处理后,作为个性化数据分析模块中个性化数据源的数据。通过个性化数据分析模型,采用数据挖掘并行化技术,通过K-means聚类算法和Map Reduce并行计算框架更新数据聚类中心,将聚类性能指标最小化,对个性化数据源内的数据进行有效挖掘分析,对分析后的结论进行规则化生成教学规则,通过人机交互呈现给学生,以提升教学系统的智能化与个性化。实验结果表明,该系统能够有效提升学生学习效率,资源占用率降低32.4%以上。     

混合式教学在《信息论与编码理论》课程的探索与实践

信息论与编码理论是信息工程和通信工程专业的一门重要的专业基础课。本文在学情分析的基础上,从教学内容、教学方法和教学手段等方面,给出了混合式教学的实践方案与实践效果。该实施方案锻炼了学生的批判性思维和创新性思维,增强了学生分析问题和解决问题的能力。开放式实验锻炼了学生的实际操作能力,培养了学生独立、自主学习的能力。进阶式章节测试鼓励小翻转课堂等方式,实施了个性化、差异化教学。通过固守课程精髓,重要定理推导采用板书方式,促使学生与老师在课堂上一起思考,锻炼了学生利用数学工具解决工程问题的能力。通过多元化考核机制,激励了学生马拉松式的学习过程。     

微机原理教学方法研究实例

微机原理课程的知识点和概念较多,如何改善教学效果、提高学生学习效率是一大难点。为此以8086 系统存储器组织及其运行机制为主线研究和讨论教学方法,将启发式教学、直观演示法教学、讨论式教学、以及练习法等教学方法灵活安排在教学过程中,取得了较好的效果。     

"微机原理"教学方法研究实例

"微机原理"课程的知识点和概念较多,如何改善教学效果、提高学生学习效率是一大难点.为此以8086系统存储器组织及其运行机制为主线研究和讨论教学方法,将启发式教学、直观演示法教学、讨论式教学、以及练习法等教学方法灵活安排在教学过程中,取得了较好的效果.     

信息技术整合背景下自动化类专业课程的探究式教学

为了推动中职教学改革,文中基于自动化类专业课程与信息技术的有机结合,对自动化类专业课程实施了探究式教学,并对其进行了改造,形成了一种以教师为主导、以学生为主体、以自动化类专业课程和信息技术的结合为基础的教学模式。这种教学模式可以提升教师与学生的信息素养,使学生能进行更加个性化的学习,提升学生的学习效率,进一步提高学生的创新意识、创新水平,增强学生解决实际问题的能力。     

“信号与系统”混合式对分教学设计

为适应现代信息技术与教学深度融合的迫切需要,课程组以“信号与系统”课程的信号抽样与多路复用知识点教学为试点,采用线上线下混合式对分课堂组织教学,依托超星一体化教学平台和学习通APP开展专业教学模式改革,并结合课程思政贯彻落实三全育人目标。     

思维导图在“模拟电子技术”教学中的应用

本文在介绍思维导图特征的基础上,分析了思维导图在“模拟电子技术”教学中的具体应用.采用思维导图有助于学生对课程的整体把握、对知识点的深入理解以及系统全面地进行复习总结.教学实践证明,将思维导图运用于“模拟电子技术”的教学中,效果较好,能够激发学生的学习兴趣,提高教学质量.     

基于个性化自适应学习的网络教学探析

个性化自适应学习与网络教学的融合,可以在保障学习行为自由性、独立性的同时,实现更匹配学习者个性化特征的学习辅助,充分优化教学行为的实效性。基于此,文章以个性化自适应学习作为语境,制定了计算机专业网络教学的高效机制:搜集信息确认学生优缺点,制定个性化学习指导机制;应用状态监测和大数据分析技术,推介针对性学习计划;设置独立的实践空间,辅助学生完成知识内化。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its