基于金属周期槽阵列的太赫兹带阻滤波器

提出了一种结构简单的新型太赫兹带阻滤波器。滤波器结构为内表面刻有方型槽阵列的平行平板波导。太赫兹波入射时,在周期结构表面激发出只与表面几何结构有关的表面等离子波。有限元法仿真结果表明:平行平板波导中波导模式的基模转换为表面等离子模式,该模式和高阶波导模式之间产生能带间隙,频率在该间隙频段内的太赫兹波将无法在波导内传播,从而实现带阻滤波功能。通过错位法,可以对该结构进行改进,使该阻带与较高频阻带间的通带增大,使结构更符合带阻滤波器的要求。通过改变两板间距,槽宽和槽深各参数可以得到不同带宽和中心频率的阻带。     

基于锑化铟的可调超材料太赫兹带阻滤波器

提出了一种工作在太赫兹频段, 基于半导体材料锑化铟的超材料带阻滤波器.由于锑化铟材料介电常数的特性, 该滤波器的谐振频率能够进行温度调节.同时, 通过有限积分法和等效LMC电路模型分析了滤波器的几何参数对其谐振频率的影响, 这两种方法得到的结果具有良好的一致性.在温度的取值范围是220～350 K时, 滤波器的谐振频率能够从0.91 THz动态调节到1.28 THz, 并且其阻带谐振频率的透射系数能够有限地被抑制.该滤波器的传输特性在30°入射角范围内具有良好的稳定性.设计的可调超材料带阻滤波器将在太赫兹无线通信、传感等方面有潜在的应用前景.     

基于锑化铟的可调超材料太赫兹带阻滤波器（英文）

提出了一种工作在太赫兹频段,基于半导体材料锑化铟的超材料带阻滤波器.由于锑化铟材料介电常数的特性,该滤波器的谐振频率能够进行温度调节.同时,通过有限积分法和等效LMC电路模型分析了滤波器的几何参数对其谐振频率的影响,这两种方法得到的结果具有良好的一致性.在温度的取值范围是220~350K时,滤波器的谐振频率能够从0.91 THz动态调节到1.28 THz,并且其阻带谐振频率的透射系数能够有限地被抑制.该滤波器的传输特性在30°入射角范围内具有良好的稳定性.设计的可调超材料带阻滤波器将在太赫兹无线通信、传感等方面有潜在的应用前景.     

基于金属-介质-金属结构的太赫兹超材料宽阻带滤波器

为了实现具有多频或宽频特性的太赫兹超材料滤波器,通常将相同或不同的谐振结构在同一平面内进行组合或者进行多层堆叠.通过将尺寸相同的C-型谐振单元分别置于中间介质层的两端,实现了基于金属-介质-金属结构的太赫兹超材料宽阻带滤波器,该滤波器具有较宽的阻带和较好的频率选择性.基于对该太赫兹超材料宽阻带滤波器C-型谐振结构表面的电场和电流分布的仿真分析,深入探讨了入射太赫兹波的传输机理,揭示了滤波器的滤波机制.基于对金属-介质-金属结构和金属-介质结构的超材料滤波器的滤波特性的仿真研究,揭示了宽阻带的形成机理.最后,采用PDMS薄膜制备工艺和金属磁控溅射方法对该超材料滤波器的样品进行了加工制备,并采用传输型的太赫兹时域光谱系统对其滤波特性进行了实际测试,验证了该超材料滤波器的结构设计、仿真和制备的正确性,为今后宽频带超材料滤波器的设计、制备和特性研究提供了参考.     

基于金属-介质-金属结构的太赫兹超材料宽阻带滤波器（英文）

为了实现具有多频或宽频特性的太赫兹超材料滤波器,通常将相同或不同的谐振结构在同一平面内进行组合或者进行多层堆叠.通过将尺寸相同的C-型谐振单元分别置于中间介质层的两端,实现了基于金属-介质-金属结构的太赫兹超材料宽阻带滤波器,该滤波器具有较宽的阻带和较好的频率选择性.基于对该太赫兹超材料宽阻带滤波器C-型谐振结构表面的电场和电流分布的仿真分析,深入探讨了入射太赫兹波的传输机理,揭示了滤波器的滤波机制.基于对金属-介质-金属结构和金属-介质结构的超材料滤波器的滤波特性的仿真研究,揭示了宽阻带的形成机理.最后,采用PDMS薄膜制备工艺和金属磁控溅射方法对该超材料滤波器的样品进行了加工制备,并采用传输型的太赫兹时域光谱系统对其滤波特性进行了实际测试,验证了该超材料滤波器的结构设计、仿真和制备的正确性,为今后宽频带超材料滤波器的设计、制备和特性研究提供了参考.     

基于温敏介质的温控太赫兹波带阻滤波器研究

采用对温度敏感的锑化铟(InSb)材料做基底设计了一种温控太赫兹波带阻滤波器。通过控制外部温度的高低来改变锑化铟基底的相对介电常数,从而实现对太赫兹波滤波器中心工作频率点的动态调节。计算结果表明,当温度由140 K增加到200 K时,该滤波器的中心频率从0.920 THz增加到1.060 THz,向高频方向移动了0.140 THz,且中心频率点的透射参数均小于–20 dB,获得良好的可调带阻滤波功能。     

MEMS THz滤波器的制作工艺

基于MEMS技术制作了太赫兹(THz)滤波器样品,研究了制作滤波器的工艺流程方案,其关键工艺技术包括硅深槽刻蚀技术、深槽结构的表面金属化技术、阳极键合和金-硅共晶键合技术。采用4μm的热氧化硅层作刻蚀掩膜,成功完成了800μm的深槽硅干法刻蚀;采用基片倾斜放置、多次离子束溅射和电镀加厚的方法完成了深槽结构的表面金属化,内部金属层厚度为3~5μm;用硅-玻璃阳极键合技术和金-硅共晶键合技术实现了三层结构、四面封闭的波导滤波器样品加工。测试结果表明,研制的滤波器样品中心频率138GHz,带宽15GHz,插损小于3dB。     

共面波导结构MEMS滤波器的设计

设计了一种基于共面波导结构的 MEMS 带阻滤波器。利用计算机软件 HFSS 模拟出滤波器的带阻中心频率约为 22 GHz、损耗 19.86 dB、阻带宽度为 5 GHz,而设计大小仅为 1 000 μm×1 100 μm×400 μm。只需改变设计参数,即可获取其它频段的带阻滤波器。该滤波器具有阻带高、插入损耗低、尺寸微小、加工容易等特点。在微尺寸条件下分析了滤波器结构的热应力特性,利用大型有限元软件 ANSYS 模拟表明在–50~+80℃的温度范围内,结构不会产生变形,表明了器件有良好的可靠性。     

基于半模基片集成波导的片上小型化太赫兹滤波器

为了满足片上太赫兹(THz)通信系统的需要,并验证硅锗双极-互补金属氧化物(SiGe BiCMOS)工艺应用于太赫兹无源器件的性能,设计了一款小型化带通滤波器。该滤波器通过在半模基片集成波导(HMSIW)上加载互补开口谐振环(CSRR)来实现小型化和滤波特性。采用商业电磁仿真软件对滤波器结构进行优化,滤波器的最终尺寸为800μm×360μm。仿真结果表明:滤波器中心频率为140 GHz,带宽为5%,最小插入损耗为2.6 dB。低插入损耗和小型化使得该滤波器适用于片上太赫兹通信系统。     

基于太赫兹人工超材料的带阻滤波器

鉴于太赫兹辐射的特殊性,其难以与自然界中多数材料发生电磁相互作用,导致太赫兹功能器件匮乏。人工超材料通过人工设计结构单元的周期排列组合,可实现太赫兹波段电磁响应的调控。本文设计一种由二氧化硅衬底上的单层金属方形谐振环结构构成的太赫兹带阻人工超材料,具有窄带宽、深带阻特性、偏振不敏感特性,通过近场电场和表面电流分析,带阻共振特性源于谐振环结构的电偶极共振。该设计结构简单,易于制备,在太赫兹调制器件、太赫兹通信、光电探测等领域具有应用价值。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-