A crystalline D-π-A organic small molecule with naphtho[1,2-b:5,6-b′]dithiophene-core for solution processed organic solar cells

In this work, we have designed and synthesized a new naphtho[1,2-b:5,6-b′]dithiophene-containing enlarged π-conjugated donor–acceptor (D–A) small molecule, NDT(TTz)₂, for use in solution-processed organic photovoltaics. NDT(TTz)₂, which contains a thiophene-bridged naphtho[1,2-b:5,6-b′]dithiophene as the central fused core and triphenylamine-flanked thiophene thiazolothiazole as a spacer, was synthesized via sequential Suzuki and Stille coupling reactions. The thermal, physiochemical, and electrochemical properties of NDT(TTz)₂ have been evaluated by differential scanning calorimetry, thermogravimetry, UV–Vis spectroscopy, photoluminescence spectroscopy, X-ray diffraction, and cyclic voltammetry. As desired for photovoltaic applications, NDT(TTz)₂ possesses good solubility, thermal stability, and a well-ordered, π–π stacked, crystallinity. The optical band gap and HOMO level of NDT(TTz)₂ were determined to be 2.0 eV and −5.23 eV, respectively. In addition to organic thin film transistor studies, application of NDT(TTz)₂ to preliminary photovoltaic devices has also been investigated by fabricating solution-processed bulk heterojunction solar cells together with PC₇₁BM in a typical layered device structure, ITO/PEDOT:PSS/NDT(TTz)₂:PC₇₁BM/LiF/Al. Without extensive optimization of the device, NDT(TTz)₂ in these devices shows a maximum power conversion efficiency of 1.44% under AM 1.5 illumination at a 100 mW/cm² intensity.     

AI/W/TiN/AI及AI/W/TiW/AI结构特性研究

本文研究了H_2还原WF_6在α-Si/TiN/Al和TiW/Al衬底上LPCVD生长钨膜的特性。测量和分析了Al/W/TiN/Al和Al/W/TiW/Al结构的接触电阻和界面特性,研究了两种结构的热稳定性。结果表明,H_2还原WF_6可以在α-Si/TiN/Al和TiW/Al衬底上实现选择性钨淀积,钨膜质量较好。Al/W/TiN/Al和Al/W/TiW/Al结构接触电阻率为10~(-?)Ωcm~2量级,远低于难熔金属硅化物同硅的欧姆接触电阻率。两种结构的热稳定性良好。采用TiN或TiW作为Al和W之间的隔离层,CVD-W填充互连层连通孔可以满足多层金属平坦化互连技术的要求。     

三星532/4500/5500/735/535/435影碟机电源电路图

49三星532/4500/5500/735/535/435影碟机电源电路图$本刊资料室     

Crystallophysical properties of the In1 ? yGayAs1 ? xNx/GaAs heterostructures

Some properties of the In_{1 − y} Ga _y As_{1 − x} N _x unordered alloys and physical prerequisites of their use in science and technology are considered. The results of studying the intermolecular interaction in the systems under study and the features of their application to the In_{1 − y} Ga _y As_{1 − x} N _x /GaAs functional hetero-structures are presented.     

Spinodal Decomposition of GaxIn1?xAsyP1?yQuaternary Alloys

Using X-ray structural analysis, scanning electron microscopy, atomic force microscopy, and photoluminescent spectroscopy, it is shown that it is possible to obtain a small-scale domain structure on the surface of liquid-phase epitaxial heterostructures. The domain structure emerges as a result of spinodal decomposition of the Ga _x In_{1 − x} As _y P_{1 − y} quaternary alloy due to immiscibility of its components and relaxation of its lattice parameter to surrounding layers.