一种新的双偶氮化合物的三阶非线性光学性能

合成了一种新的双偶氮化合物2,6-双[(2,4-二羟基苯基)偶氮]蒽醌,用IR,1 H NMR和元素分析表征了其结构.采用飞秒激光,运用简并四波混频法,研究了化合物在非共振状态下的三阶非线性光学性能.它的三阶非线性光学极化率χ(3)为3.37×10-13 esu,非线性折射率n2为6.21×10-12 esu,分子二阶超极化率γ为4.02×10-31 esu,响应时间τ为101 fs.分析了化合物的分子结构对三阶非线性光学性能的影响.增长共轭链,形成供吸供构型,增大取代基的吸或供电子能力等因素有利于获得较大的三阶非线性光学性能.     

二萘并噻吩四酮在飞秒激光下的三阶非线性光学性能

合成了化合物二萘并[2,3-b:2',3'-d]噻吩-5,7,12,13-四酮,用IR,1H NMR和元素分析表征了其结构.采用波长为800 nm,脉宽为80fs的钛宝石飞秒激光,运用简并四波混频(DFWM)法,研究了化合物在非共振状态下的三阶非线性光学(NLO)性能.三阶非线性光学极化率为2.73×10-13 esu,非线性折射率为5.03×10-12esu,分子二阶超极化率为2.85×1031esu,响应时间为86fs.分析了化合物的分子结构对三阶非线性光学性能的影响.结果表明此化合物具有潜在的非线性光学应用.     

新的偶氮类有机共轭化合物的合成及三阶非线性光学性能

设计合成了6个新的偶氮类有机共轭化合物,用傅里叶变换红外光谱仪(FT-IR),1H核磁共振(1H NMR)和元素分析确证了结构.采用飞秒激光,运用简并四波混频(DFWM)法,研究了化合物在非共振状态下的三阶非线性光学(NLO)性能.它们的三阶非线性光学极化率x(3)为(3.31～3.96)×10-13 esu,非线性折射率n2为(6.08～7.27)×10-12esu,分子二阶超极化率γ为(3.44～4.11)×10-31 esu,响应时间τ为102～111 fs.探索了化合物的分子结构对三阶非线性光学性能的影响.引入离域能小的芳杂环,增长共轭链,形成吸供构型,增大取代基的供电子能力,提高共轭体系的共平面程度等因素,有利于获得较大的三阶非线性光学性能.     

新型超分子化合物(HDPA·DMF)2(HDPA·2DMF)(PMo12O40)的非线性光学特性的研究

应用单光束Z扫描技术,在波长532nm、脉宽8ns的条件下,对一种新型的多金属氧酸盐基超分子化合物(HDPA.DMF)2(HDPA.2DMF)(PMo12O40)的三阶非线性光学性质进行了研究。结果发现,该新超分子化合物不存在非线性吸收,但是具有较强的非线性自散焦效应(n2=-4.032×10-19m2/W),其三阶非线性极化率χ(3)=-1.37×10-12esu。分析了该超分子化合物的特殊晶体结构和强π-π作用等因素对其三阶非线性光学性质的重要影响。     

新型超分子化合物(HDPA·DMF)_2(HDPA·2DMF)(PMo_(12)O_(40))的非线性光学特性的研究

应用单光束Z扫描技术,在波长532nm、脉宽8ns的条件下,对一种新型的多金属氧酸盐基超分子化合物(HDPA.DMF)2(HDPA.2DMF)(PMo12O40)的三阶非线性光学性质进行了研究。结果发现,该新超分子化合物不存在非线性吸收,但是具有较强的非线性自散焦效应(n2=-4.032×10-19m2/W),其三阶非线性极化率χ(3)=-1.37×10-12esu。分析了该超分子化合物的特殊晶体结构和强π-π作用等因素对其三阶非线性光学性质的重要影响。     

中心金属原子对萘酞菁化合物激发态的光学非线性增强效应

应用Z-扫描技术对比研究了萘酞菁铅和萘酞菁钯化合物在波长为532 nm纳秒激光脉冲作用下的三阶非线光学特性。实验结果表明,两种萘酞菁化合物均显现出较强的非线性吸收特性(反饱和吸收)和非线性折射特性(自聚焦)。理论拟合得出萘酞菁铅和萘酞菁钯的非线性吸收系数分别为6.5410-10 m/W和3.9010-10 m/W;非线性折射系数率n2分别为1.6810-10 esu和8.0410-11 esu;二阶分子超极化率系数分别为3.4410-28 esu和2.5710-28 esu,CS2二阶分子超极化率系数为4.3210-33 esu;两种萘酞菁化合物的二阶分子超极化率强于CS2近5个数量级。实验结果表明,萘酞菁铅化合物具有较强的非线性吸收和非线性折射特性,且大于萘酞菁钯化合物的光学非线性特性是由于萘酞菁铅化合物的重原子效应提高了其光学非线性特性。     

nc-Si:H薄膜的三阶非线性光学性质

用简并四波混频技术(DFWM)研究了nc-Si:H薄膜的三阶非线性光学性质,观察到了这种纳米薄膜材料的位相共轭信号,测得晶态比为XC1=15%和XC2=30%的二个样品在光波波长为589nm处的三阶非线性极化率分别为χ1(3)=3.8×10-6esu和χ2(3)=4.3×10-7esu,并对其光学非线性产生机理作了探讨。     

一种花菁染料超薄膜的激光诱导瞬态光栅

采用旋涂法制备了一种五甲川花菁染料的超薄膜,利用激光诱导瞬态光栅的方法研究染料薄膜的三阶,乃至更高阶的非线性光学特性.通过理论计算得到了该样品在不同浓度下的非线性光学信号的响应时间(59～102 ps),分析表明花菁染料五甲川链上的π-π*电子跃迁是引起该染料薄膜非线性光学效应(20.5×10-13esu～30.3×10-13esu)的主要原因.研究结果表明激光诱导瞬态光栅是研究介质高阶非线性光学特性一种非常有意义的实验方法.     

四叔丁基碘代萘酞菁镓的合成及非线性特性

合成了四叔丁基碘代萘酞菁镓((t-Bu)4NcGaI)化合物,利用元素分析、红外光谱、核磁共振氢谱等方法,验证了化合物的分子结构。该化合物的Q带在近红外区(801 nm),相对酞菁化合物红移了70 nm。应用调Q倍频纳秒/皮秒Nd∶YAG脉冲激光,在波长为532 nm,脉冲宽度为4.5 ns,重复频率为2 Hz,脉冲能量39.8μJ的条件下,测试了浓度为1.22×10-4mol/L化合物CH2Cl2溶液的Z-扫描曲线。测得它的非线性折射率n2和三阶非线性极化率χ(3)分别为2.54×10-11esu和9.51×10-12esu。由此计算化合物分子极化率γ′为3.3×10-29esu。     

一种新型dmit盐的三阶非线性光学性质研究

为了研究一种新的有机金属配合物dmit盐(tetram ethylammon ium)bis(1,3-dithiole-2-thione-4,5-dithiolato)copper(简称为MeCu)的三阶非线性光学性质,采用单光束z扫描技术,在波长为1064nm、脉宽为30ps条件下对浓度为1.0×10-3mol/L的MeCu/丙酮溶液进行研究。实验结果表明,其三阶非线性折射率n2和二阶分子超极化率γ分别为-2.15×10-11esu和1.94×10-30esu,未发现三阶非线性吸收的存在。表明该材料在全光开关等非线性光学器件的研制上可能具有潜在的应用价值。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-