共享孔径交错阵列综合优化方法

共享孔径稀疏交错布阵作为多功能综合传感器系统的关键技术基础,可以减少天线的数量,节省空间,降低载荷和制造成本。利用差集构造的共享孔径交错阵列,由于阵元的非均匀稀疏分布而导致存在较高的旁瓣电平,提出一种将差集理论和遗传算法相结合对阵列进行优化的方法。首先由差集确定交错阵列的阵元位置,再以激励幅度分布为决策变量,利用遗传算法同步降低各子阵的旁瓣电平,使得共享孔径交错阵列的整体性能得到提升。仿真结果表明,该方法有效抑制了阵列的旁瓣电平,是一种有效的交错阵列优化方法。     

基于循环差集与模拟退火法的阵列综合

介绍了循环差集的基本原理,提出将循环差集与模拟退火法相结合的阵列综合方法.利用循环差集综合稀疏程度较高的非均匀线性阵列以及可双频工作的孔径共享线性阵列,得到的阵列方向图的旁瓣电平较低,且服从均匀分布.利用模拟退火法对由循环差集综合得到的稀疏阵列的电流幅度分布进行优化,可以使阵列方向图的旁瓣电平进一步降低,同时优化后的馈电电流幅值比较低.仿真结果表明,该方法是一种有效的阵列综合方法.     

利用GA实现非对称稀疏线阵旁瓣电平的优化

该文讨论运用遗传算法综合非对称的稀疏直线阵列(阵元从规则栅格中稀疏)。阵元在中心两侧非对称分布的布阵方式提供了可利用的优化自由度,将更有利于提高稀疏阵列的性能。构造了阵元关于阵中心非对称时优化旁瓣电平的适应度函数,仿真结果表明,无对称约束的阵元排列,不仅可以进一步抑制稀疏线阵的相对旁瓣电平(RSLL),而且当阵列由有向阵元组成时,有益于改善阵列波束扫描过程中RSLL的恶化。     

稀布同心圆环阵列的半径优化方法

针对有阵列孔径阵元总数和最小阵元间距约束的稀布同心圆环阵列综合问题, 提出了一种基于修正遗传算法(Modified real Genetic Algorithm, MGA)的半径优化方法.通过约束同一圆环上阵元间距相等, 利用MGA优化圆环的半径, 获得最小的峰值旁瓣电平.该方法不仅降低了优化的计算量和模型的复杂性, 而且还有效地改善了阵列的旁瓣性能.仿真结果证明了该方法的有效性和鲁棒性.     

基于迭代FFT算法的平面阵列交错稀疏布阵方法

交错稀疏阵列天线的设计需要实现“稀疏布阵”和“子阵交错机制”两个关键技术的有机“协同”.提出一种基于改进迭代快速傅里叶变换(Fast Fourier Transformation, FFT)算法的均匀面阵交错稀疏布阵机制.鉴于均匀矩形平面阵列天线激励与方向图存在二维傅里叶变换的关系, 该方法通过对均匀面阵方向图采样的频谱能量分析, 采用交错选取子阵激励的方法, 实现了面阵天线方向图频谱能量的均匀分配, 获得了近似相同方向图的交错子阵设计.在此基础上, 采用迭代FFT算法对交错子阵激励进行迭代循环, 有效降低了交错子阵的峰值旁瓣电平.理论分析与实验仿真证明, 相对于基于循环差集和互补差集的稀疏交错优化方法, 该算法实现的交错稀疏阵列设计具有方向图近似程度更高, 且峰值旁瓣电平更低的优点.     

基于遗传算法的球面阵列旁瓣电平优化方法

针对共形球面天线阵列,采用有向天线阵元,在保持阵列孔径不变的条件下,以阵元分布位置作为优化变量,以降低最大相对旁瓣电平为优化目标,运用改进的遗传算法对阵列进行稀疏优化,仿真结果表明:该方法能够降低球形阵列的旁瓣电平,达到了减少阵元个数、降低天线系统成本的目的。     

共享孔径同心圆阵稀疏交错优化布阵方法

同心圆阵列天线具有波束对称、360°方位角扫描、抗干扰能力强等优点，被广泛应用于星载、机载、舰载雷达及飞机声呐等领域。在天线孔径有限的情况下，如何进一步提高同心圆阵的孔径利用率，通过孔径的空分复用，设计出子阵稀疏交错分布的多功能同心圆阵列天线，具有较大的研究价值。利用均匀同心圆阵列天线激励与方向图函数存在二维傅里叶-贝塞尔变换关系，基于二维三次插值和密度加权，提出了一种同心圆阵稀疏交错优化布阵的方法。该方法通过对均匀同心圆阵列天线方向图采样值的频谱能量进行分析，采用三次插值的方法，实现了同心圆天线阵列方向图函数到同心圆阵元激励能量的映射转换；基于密度加权的原理，对排序后归一化阵元激励的奇偶交错选取，使得稀疏交错子阵方向图频谱能量均分匹配，实现了同心圆阵的稀疏交错优化布阵设计。仿真结果表明，该方法得到的交错子阵天线具有峰值旁瓣电平低、主瓣宽度窄且方向图性能近似程度高的优点，有效解决了同心圆阵列天线稀疏交错优化布阵的设计难题，实现了两子阵交错的共享孔径多功能同心圆阵列天线设计。     

运用遗传算法优化共形球面天线阵列

针对共形球面天线阵列,采用遗传算法这一全局优化方法,在保持阵列孔径不变的情况下,以阵元分布位置作为优化参量,以最大相对副瓣电平为优化目标,进行稀疏优化,减少了阵元数量,降低了成本。仿真结果表明,该方法可有效地降低球形阵列的旁瓣电平。     

基于迭代FFT算法的平面稀疏阵列优化方法

提出了一种基于迭代FFT算法的优化方法来实现平面稀疏阵列的峰值旁瓣电平优化,并给出了详细的优化步骤.在给定的旁瓣约束条件下,利用阵列因子与阵元激励之间存在的傅里叶变换关系,对不同的初始随机阵元激励分别进行迭代循环,就可以降低稀疏阵列的旁瓣电平.在迭代过程中,根据稀疏率将阵元激励按幅度大小置1置0来完成阵列稀疏.仿真实验...     

基于几乎差集的多输入多输出雷达阵列稀疏优化方法

针对基于循环差集(Cyclic Difference Sets,CDS)的多输入多输出(Multiple-input Multiple-output,MIMO)雷达阵列稀疏方法由于现有CDS构造条件苛刻、集合数量有限而造成阵列配置数量较少的不足,提出了基于几乎差集(Almost Difference Sets,ADS)的MIMO雷达阵列稀疏优化方法.该方法可解析地确定发射、接收阵元位置,并先验预估虚拟阵列的方向图旁瓣上界.基于ADS的MIMO阵列在旁瓣性能上与基于CDS的阵列相近且优于随机阵列;ADS具有构造简单、阵列配置丰富的优势,有利于该方法的工程应用.仿真验证了所提方法的有效性.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.